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* Static Memory
* Moore s Law
VDS
When INPUT goes HIGH VDS
0 t
VDS
N
0 t
VDS
When INPUT goes LOW VDS
P 0 t
VDS
0 t
A LOW input voltage turns the transistor ON, which decreases its
resistance to a value much less than the RESISTOR, pulling the
output voltage to VDS level.
The Complementary MOS Inverter
The RESISTORS dissipate too much power. We eliminate them by combining the two
circuits into one as a PUSH-PULL.
P
P
+ =
N N
The Complementary MOS Inverter
VDS
N VDS
A LOW input voltage turns the p-device ON, pulling the output
voltage to VDS level. A HIGH input voltage turns the n-device ON,
pulling the output to GROUND level.
pseudo n-well
p-well
n-type substrate
Transistor for the 0.13 µm “Node”
row select
VDS
During WRITE operation, BOTH ROW and
COLUMN lines are at VDS, so that the
TRANSISTOR is ON and charge flows
ONTO the capacitor.
column select
row select
VDS
During READ operation, ONLY the ROW
and lines is at VDS. But the TRANSISTOR
VC is ON and charge flows OFF the
capacitor. The COLUMN line is used to
DETECT this charge with an AMPLIFIER.
column select
Dynamic Random Access Memory
Field Field
oxide oxide
N+ N+
p-well
n-type substrate
N+
trench capacitor
Static Random Access Memory
row select
VDS
P P
N N
DRAM TODAY
Pentium IV
Pentium III
Pentium II
Logic!
Moore s Law
(after Gordon Moore, of Intel, from an IEDM talk in mid-80s.
This has proven to be correct for the past 40 years.)
+++++ +++++
n+ n+
CHANNEL
P-TYPE
LG
1000
These projections are
being hit right on
schedule.
Dimension (nm)
100 DRAM
MPU Isolated Line
Year
Devices will get smaller! Intel Projections:
Scaling the MOSFET
CONTROL GATE
SOURCE DRAIN
oxide thickness t
n n
L
p-TYPE LAYER
⎡ eW 2 N D N A ⎤
Vbi = ⎢ ⎥
⎣⎢ 2ε ( N D + N )
A ⎦⎥
Scaling the MOSFET
CONTROL GATE
SOURCE DRAIN
oxide thickness t
n n
L
p-TYPE LAYER
n n
L
p-TYPE LAYER
1 V 1
f ~ , R = ⇒ 1 , C ~ ACox ~ 0.5 *
RC I 0.7
Devices will get faster! Intel Projections:
4 GHz
Moore s Law
(after Gordon Moore, of Intel, from an IEDM talk in mid-80s.
This has proven to be correct for the past 40 years.)
The overscaling of the area, due to circuit cleverness, can increase the power
per unit area of the chip, so this cleverness must include new approaches to
lower the power dissipation in the circuit—low power designs.
Scaling reduces dimensions by 0.7X,
but area by 0.33X due to overscaling
WHY?
The number of functions on
chip increases faster than the
chip area, since the size per The finished Si chip costs on
function decreases due to the order of $10-30 per square
scaling centimer. Hence, the cost for
manufacturing, packaging,
f ~ A1.4 and test of the chip increases
with time
$C ~ A
Nevertheless, Moore s
law, and the
dominance of (Si) real
estate cost, can give
some guidance.
Cyrix 6x86