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*School of Engineering, The University of Tokyo, Hongo 7-3-1, Bunkyo-Ku, Tokyo 113 (Japan)
**Research Centerfor Advanced Science and Technology, The University of Tokyo,
Kamaba-4-6-1, Meguro-Ku, Tokyo 153 (Japan)
***Department of Nuclear Chemistry, E6tv6s Lor6nd University, H-1518 Budapest 112, P.O. Box 32 (Hungary)
Contents
0236-5731/96/US $ 32.0
Copyright 9 1996 Akad~miai Kiad6, Budapest
All rights reserved
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
References 157
104
K: NOMURAet al.: APPLICATIONSOF CONVERSIONELECTRON
II. INSTRUMENTATION
FOR CONVERSION ELECTRON MOSSBAUER SPECTROMETRY
A. Methodology
The measurement system of the M6ssbauer effect is composed of 7-ray source, acceleration
driving devices coupled to a controller, absorber, detector, multichannel analyser and computer
for accumulation of data. For example, 57C0, ~19mSnand ~3~Sm are used as typical '/-sources
105
K. NOMURAet al.: APPLICATIONS OF CONVERSION ELECTRON
for 57Fe, 119Sn and 151Eu Mbssbauer spectrometry, respectively. The decay scheme of the "/-ray
source leading to 57Fe is shown in Fig. 1. Source matrices need to have Debye-Waller fractions
close to 1, narrow resonant line widths and neither quadrupole interactions nor magnetic
interactions. On the basis of the geometrical arrangements shown in Fig. 2, the methods for
measuring MSssbauer spectra are divided into three categories as follows. Transmission
M6ssbauer Spectrometry (TMS), Emission MSssbauer spectrometry (EMS) and Scattering
57Fe ( i 4 . 4 k e V )
57~ l.Tm
\
~i00%
57Co 270d
5/2 -
3/2. i4.4
1/2- i 7~1
S~Fe
Fig. 1. Energy of radiations: YM;14.39 keV, 71; 122.0keV, Y2; 136.4keV, gab; 6.5 keV, Half-life ?M; 9.8 9 10-s sec,
conversion coefficient?M;9.00, isotopic abundance;2.19%, magnetic moment ground state; +0.09024 nm,
magnetic moment excited state;4).154 nm, quadmpolemoment3/2 state; + 0.285b,resonar- .ross section;
2.43- lif t8 cm2, natural width; 4.655.10-12 keV, velocity width; 0.09699 rmn/sec, and recoil energy;
1.951. 10-3 keV (from Ref. 4)
Mbssbauer Spectrometry (SMS). The SMS can be further subgrouped into three methods,
SGMS, XMS and CEMS, which are discriminated by the scattered radiations detected -,/-rays,
X-rays or electrons - after resonant "/-ray absorption.
MSssbauer parameters obtained by SMS are inherently the same as those developed for
conventional TMS. The resonance peaks appear by energy transitions of the 57Fe atomic
nucleus between the excited state (nuclear spin: I = 3/2) and the ground state (I = 1/2). The
hyperfine structures observed are due to the electron states, electric quadrupole interaction and
magnetic dipole interaction around '/-ray resonance nucleus as shown in Fig. 3. Isomer shift
(IS) comes from interactions between the nucleus and electrons accommodated in the ls
orbital. The electrostatic energy of a nuclear level shifts due to the variation of electronic
charge density around nucleus. Quadrupole splitting (QS) arises from the interaction between
an electric field gradient (EFG) and nuclear quadrupole moment, eQ. Magnetic splitings due
to the interaction between magnetic moment and magnetic fields (H~,) are also observed. The
relative intensity ratio of sextet p e ~ s observed in the CEM spectrum of iron is different from
that in the TM spectrum because the magnetic moments in the bulk and the surface are
generally at random and parallel to the surface, respectively.
106
K. NOMURA et al,: APPLICATIONS OF CONVERSIONELECTRON
(a) (c)
> !..r..,.a.,.Y.~-I 7 ray <~> 7 ray
Source [;i;;,t!~;,#,:;i:~i!;:?;2;!~:i: i i} ~ , r a v
Source L_J Detector
Sample
(b)
II Xray I
<__>';'ray ~-] 7ray
< ............
ZZII.~ .................
> .........................
~ .................~ Sample
Source Detector Source II 1...1..e_
~ r Detector
+Sample Standard
Absorber
Fig. 2. Arrangement of equipments for MOssbauer spectromelry. (a) Transmission mode, (b) emission mode,
(c) scatteringmode: scatteredresonance7-rayor X-ray detected,and (d) 2 ~rbackscatteringmode: conversion
electrons or X-ray detected
The inner conversion process in the excited iron nucleus Iv is shown in Fig. 4. The
conversion efficiency (c~: the emission probability ratio of conversion electrons and scattered
y-rays) is 8.5, and the conversion efficiency of K shell electrons is 7.6. Therefore, K shell
electrons are produced with the probability of 0.8 ( = 7.6(8.5 + 1)). The energy of K electrons
is 7.3 keV, which is the y-ray energy (14.4 keV) minus the binding energy (7.1 keV). In the
process, transition of electrons from the L shell to the K shell is followed by the emission of
K X-ray and Auger electrons. As the fluorescent efficiency (mE) of the K X-ray is 0.34, the
probability of the K X-ray is 0.27 ( = 0.8 - 0.34) and the energy is 6.4 keV. The emission
probability of 5.4 = 5.6 keV (KLM) and 6.3 keV) (KLM) Auger electrons is 0.53 ( = 0.8 9
9 0.66). Therefore, K inner conversion electrons, Auger electrons, K X-rays, and resonant
y-rays are produced with the probability of 80%, 53%, 27%, and 10%, respectively. Total
probability of 57Fe resonant electrons reaches 133%9 The occurrence of 1198n (0~ = 5.2) is
ahnost the same as that of STFe and each probability is also shown in Fig. 4. The total
probability of u9Sn resonant electrons is 159%.
The statistical quality of TMS, XMS, and CEMS measurements depends on the thickness
of iron as shown in Fig. 5. H,~8 The detection of, electrons is advantageous for iron samples
less than about 500 nm in thickness. Thick samples between 0.4 and 4 Ixm can be effectively
measured by XMS, and TMS or SGMS is advantageously applied to samples thicker than
4 I.tm. CEMS provides information on thin solid layers less than 300 nm thickness, whereas
SGMS and XMS give the information of thick surface layers about 20 txm and 10 I.tm in
thickness respectively. The experimental line width increases with the increase of effective
thickness of the absorber. However, the line width is relatively narrow in CEM spectra as
compared with TM and XM spectra.
.On the basis of the report'by GANCEDO et al.} 9 the advantages and disadvantages of STFe
ICEMS methodology can be summarized as follows.
107
K. NOMURAet al.: APPLICATIONSOF CONVERSIONELECTRON
/iEq=+ e2qQ
b 6 ----~
4=a 4.a
8 o ! :
0
Velocity 0 Velocity
: H,n//Vzz m
--:3/z
Is . Qs
~ . Q 3/z / -.-----W~-"-'---~ -1/2
I-3/2 ............ #::17.. . . . . . . . t/2
g -A5 _, go-g.,_
"- "'=i g " - " I -'-i g~ ":! g.+/kEq-~ g,=~/z~~
1 1 ,
,, ,,
8 [ ,: o=Zlz:H
I P~ , ~[ P~
-.ab.- Velocity
6
Fig. 3. Energystates of 57Fenucleusin the excited (I = 3/2) and groundstates (I = 1/2) and M0ssbauerspectra
(I) Advantages
(1) The penetration depth for 7.3 keV K-conversion electrons is below 300 nm and the
energy lost in about 5 nm is negligible.
(2) The approximate energy distribution function for electrons related to depth and detection
angle with energy can be calculated.
(3) Electrons are very easy to detect efficiently.
(4) Non-resonant electrons from the photoelectric effect can be differentiated.
(5) The line widths of resonant peaks do not depend so much on the thickness of thicker
samples and the saturation of peak intensity is not observed.
(6) The intensity ratio of magnetic split peaks obtained can yield effective information on
the configuration of magnetic spin in the surface layer.
(II) Disadvantages
(1) Compton scatterin and the phbtoelectric effect produce "non-resonant electrons".
(2) Loss of electron energy in their passage through matter cannot be calculated.
108
K.NOMURAetal.:APPLICATIONSOFCONVERSIONELECTRON
14.4keV Tray
10% ?.~keV K electrons
27% 6:3keVXray
23.8keV T ray
N 16% 9
~ 1 9 . 8 k e Y L elecf~rons
~fray 100%,~
23.8keY ~?
rays 84%
75% 2.8keV Auger
9%3.6keg Xray electrons
Fig. 4. Inner conversion process after M0ssbauer Effect of 57Fe and UgSn nuclei
..._. 7 - ~ " ~ .
lO-I
_ ~ . / \ \
I-i
t~
o ,, -
,,-I
Gr
lO-- <i. \
/
lO-4 I I 1
10 10z 103 10~ 10~-
Iron Film Thickness (nm)
Fig. 5. Comparison of the statistica quality Q of the 57Fe M6ssbauer spectra for iron measured with the detection
of scattered y-ray, X-ray and electron with Q values calculated from the formulas derived in [Ref. 18],
(from Ref. 11)
109
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
B. Integral CEMS
1. Probing depth
Using various thick Fe films prepared on stainless steel,THOMAS et al) ~ showed that
65% of total resonant electrons come from a surface thickness of 60 nm and that 96% come
from a thickness of 300 rim. LILJEQUIST zt made a theoretical analysis of contributions to
the relative.signal for stainless steel in the experiments of THOMAS et al. Contributions of
Auger, K-conversion, L-conversion, X-ray photoelectron (XPE), and X-ray photoelectron
(XPE) are shown in Fig. 6, 'a as a function of depth. It is clear that almost of all Auger and
K conversion electrons are emitted from about 100 nm depth. Using the assumption that
eleclron attenuation in a surface film follows a simple exponential law, BA1NBRIDGE
(1975) n produced a quantitative treatment of CEM spectra for a duplex oxide film grown on
pure iron. The effective mass absorption coefficients for the attenuation of 7.3 keV electrons
are 2.5.104 cmZ/g in pure iron2~ and 1.1.104 cm2/g in iron oxides z3 and the attenuation
coefficient for 5.4 keV electrons is 1.73.104 cm~/g in iron oxides. 23 A relationship between
oxide thickness and relative spectral area was established by GRAHAM et al (1978). 24
Electropolished iron substrates were oxidized at 513 K in 0.66 Pa oxygen. Using magnetite
films of thicknesses between 26.5 and 425 nm, the following relationship was deduced:
where d is the oxide thickness and P the percentage of Mtssbauer peaks due to oxide.
1.0- Iss/Itot
o
4~
\~Auger
~
~0.5-
,x:l
"~ K cony. \ \ ~
L conv.~ . . . . .
>.dFo
5'0 16o (~)
Depth
Fig. 6. Contributionsto the relative stainlesssteel signal in THOMAS et al. e• (Ref. 20), according to the
Liljequist theory (From Ref. 21)
110
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
The probing depth is determined by the escape range of conversion electrons, Auger
electrons and secondary electrons in the absorber. The range of low energy electrons (1-10
keV) in a solid can be estimated using FELDMAN's expression2s as follows:
R = 25(A/p Z"a)E~
Where n = 1.2/(1 - 0.29 log Z), E is the electron energy (keV), R is the range (nm), A is
the atomic or molecular weight, Z is the atomic number or electron number/a molecular, and
p is the density (g/cma). This expression is convenient for estimating the maximum thickness
of various samples that can be observed by integral CEMS techniques. A theoretical analysis
on ICEMS of natural iron absorbers was proposed, 26 and the resonant emission of secondary
electronsa7 and the changes of internal conversion coefficients for the M1 transitions in ions2s
were considered and the weight functions for ICEMS 29 were determined.
2. Sensitivity
An attractive feature of CEMS is its high sensitivity. Typical isotopes for the CEMS
technique are listed in Table 1. H The lowest quantities are 1014 atoms, cm -2 for SVFe, 1015
atoms, cm -2 for ngSn, and 1016 a t o m s , cm -2 for ~SaEu. The sensitivity depends on nuclear,
atomic and solid states. The maximum magnitude of the resonance ~/is given by the following
expression t~ for thin single line scater.
No - N~ 1 a ~o
N= <rl=~fJan l+a
where N= and N are the count rates at non-resonance and off-resonance, respectively, f~ and
fa are the recoilless fractions for the source and the absorber, t~ is the internal conversion
coefficient, 6o is the resonant absorption cross section, ~ is the photoeffect cross section and
n is abundance of the resonant isotope. In practice, the observed magnitude is smaller than
q. The non-resonant background is Caused by secondary electrons, produced by non-resonant
y- and X-rays scattered from the counter and samples as weli as high energy 7-rays. As seen
in Table 1, 57Fe and ttgsn CEMS can be easily performed. Since t51Eu nuclei have high inner
conversion efficiency, ~5~Eu CEMS is more useful than aSaEn TMS. The S/N ratios of
MSssbauer spectra are improved by filtering out low energy X-rays and "/-rays, for example,
with 2-3 rnm of Lucite for 57Fe, 25 gm of Pd for H9Sn, or 2 mm of Cu for 197Au.
3. Detectors
The detectors normally used for CEMS are divided into the two typical types of gas
counter and electron spectrometer. Many kinds of detectors have been developed for different
purposes: ICEMS, DSCEMS, low temperature CEMS, and high temperature CEMS.
a) Gas proportional counter
TERRELL and SPIJKERMAN (1968) made a simple and excellent proportional counter
for CEMS and XMS. 3~ Many proportional counters have been designed specially for CEMS
and XMS 3~ and SGMS. 32 A back-scatter 2re gas proportional counter has high detection
efficiency for low energy electrons of about 10 keV. Since He gas is insensitive to incident
X-rays and 7-rays, CEM spectra are acquired easily in flowing He + CH 4 gas. XMS spectra
also can be obtained by changing to an Ar + 10% CH 4 flow-gas mixture. It is necessary to
place a Lucite plate (2 mm thick) in front of the incident window to reduce the detection of
X-rays emitted from the 7-source, and to count the 6.3 keV resonance Fe X-rays.
111
K. N O M U R A et al.: APPLICATIONS OF CONVERSION ELECTRON
o o o o O o o o o
~ 0
< ~ ~gg
<
g gg~g g
CN E
O= o
g g d d ~
db d ~g d .g~
m m
4 2 ~g
~ ~ eg g ~d 4m ~
0 ~
"~ >
9,-t 0
o ~ xx O 0 0 0 ~ O O C O 0 0 0 0 ~ O 0
~ ~
C
0
r ~ CO
:0
0 ~ N
~ 0
~ m
~D 0
9 0 " , 0 . . . . . O
<
m 0
112
K. NOMURAet al.: APPLICATIONSOF CONVERSIONELECTRON
The operating voltage depends on the diameter of amode wire, the distance between the
anode and sample cathode in counter body, the gas pressure and the percentage of quenching
gas included for a proportional counter. The large volume of this gas flow detector makes it
unsuitable for detecting STFe conversion electrons because the range of 7.3 keV electrons in
He gas is at highest 5 ram. A typical and simple gas flow detector for STFe CEMS is shown
in Fig. 7. 33 One face of the sample inside the counter acts as the cathode. A higher utility rate
was achieved from a counter with a single wire housing than with a multiwire housing. ~4"~s
The fraction of the background noise due to the 122 and 136 keV T-rays was 65% in the
energy region 2-5 keV. 36 The improvement of reflection efficiency and S/N is of most
importance for shortening measuring time. The sensitive area of sample is near the anode
wire. The higher applied voltage reduces S/N by increasing detection of nonresonance
electrons from the counter wall. Starting from the theory of phenomena in gas detectors under
space charge conditions, a general expression for the multiplication factor was obtained. 37 The
operational maximum range of the gas Counters used in CEMS is at the border between the
proportional counter and Geiger-Miiller domains.
When resonance electrons of enriched STFe samples are selected with a small energy
window, the shape of resonance lines sometimes become asymmetric. It is due to the gain
Yray ~e ~II I
Fig. 7~A back scattered type of gas flow counter for CEMS. A: gas inlet and outlet, B: anode, C: W anode
(0 30 p.m), D: holes for gas, E: AI body, F: H.V. connector, G: A1 window (15 ~tm thick), H: sample,
i: screw, J: supporter (from Ref. 33)
113
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
shift of gas multiplication after the count rate increased drastically on resonance. Further,
attention should be paid to the ohmic contact between counter body and sample in practice
because the charging of the sample affects the electric field in the counter in a long
measurement. An electrically conductive film, such as thin carbon, must be applied to an
insulating sample. The properties of the gas scintillator were used to detect electrons for
CEMS by VARTANOV and ZEMSKOV. 38 However, the measuring system is less effective
than gas multiplication.
b) Parallel plate avalanche counter
A parallel plate avalanche counter (PPAC) has been developed for CEMS. sg,4~ A flat
plate of graphite is used as the anode for working in the avalanche region. In PPAC, any
organic polyatomic gas can be used as the counting gas, acetone vapour being preferred
normally.42 Powder samples dissolved in ketone were painted on copper plate and
were measured using a PPAC filled with ketone gas. The advatltage of this counter is that an
insulated sample can be measured by CEMS, albeit without energy selection of the emitted
resonance electrons. All resonance electrons detected could give the higher S/N. The utility
of the PPAC for lJgSn CEMS was demonstrated.43 A gas filled resonance counter equipped
' with enriched 57Fe stainless steel microfoil provides the highest S/N. 44 It was applied to low
and intermediate energy M0ssbauer transition45 and to selective double excitation. 4~
c) Gas counter for low temperature
Mtssbauer measurements at various temperatures give many types of information. It is
desirable to measure CEM spectra at as low temperature as possible. Pure He gas and He gas
mixtures with 5% quenchers of H 2, N 2, CH 4, and CO can be used at 77 K by placing a gas
8
(a) ? -
- (b?-J .",
X : "'~
4 " \\
onv22 \
f l
O0 4 8 12 16
Energy (keV)
Fig. 8. Pulse height spectra recorded at 100 K using Ar + 5% CH4 (a) on and (B) off resonance,and He + 5% CO
(c) on and (d) off resonance (from Ref. 48)
114
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
I-I. V .
A , 5.
A i i.-:*, t
7r
!,~4-
!lX_z,0 =
~CEMS. . . . ~S
Fig. 9. Gas tlow proportional detector designed for simultaneous measurements of CEMS and XMS at 150 to
300 K. A: anode, B: carbon coated thin film, C: sample, D: Cu rod, E: shelter (Pd+ Cu) (From Ref. 49)
counter inside the cryostat normally used for TMS. The most stable speration was achieved
with He + 5% CO at 77 K. 47 A gas flow counter, set outside cryostat, could be operated at
100--400 K. 4s,49The pulse height spectra recorded at 100 K are shown in Fig. 8.48 NOMURA
and UJIHIRA also designed a gas flow proportional counter with two separated cells for
simultaneous measurement of CEMS and XMS at 100-300 K in 1986 as shown in Fig. 9. I n
this type of counter, it was hard to control the temperature precisely and to keep it constantly
low for several days. KASTNER et al., 50 and KAMZIN et al: 1~2 also developed a dual
chamber proportional counter for CEMS and XMS in the temperature range 100-700 K. It
was easy to achieve the operation at liquid N 2 temperature. However, at lower temperature
than liquid N 2 temperature, it was not easy to keep the gas-filled counter working stably
because of the tendency of impurity or quenching gas in He to condense. Recently
FUKUMURA et al. developed a gas counter which could be operated at various temperatures
down to 15 K as shown in Fig. 10:3e435 The purified He, Ne, H e + 5 % N 2 or H e + 10% CO
made it possible to operate a proportional counter at low temperatures between 15 and 300K,
though gas multiplication decreased with lowering temperature and the proportional counting
region of applied voltage became narrow. A cryogenic gas counter for CEMS can be made
to operate even under strong magnetic fields: 6
d) Gas counter for high temperature
In the initial stage of developing a gas cou/ater for high temperature, a gas chamber was
insered into an electric furnace: 7 INABA et al. (1981) 57 made a high temperatm'e gas flow
counter with the sample heated up to 740 K. The sample was heated by a "hot finger" while
the detector body was kept cool. 59 A different type of gas counter with a halogen lamp heater 60
were made in order to heat the samples only. This type of heated gas counter can work well
only below 600 K. The higher temperature the gas counter is operated at, the smaller the
recoilless fraction, the more reactive is the quenching gas to the surface of sample, and the
higher the thermal electron background count. However, gas reactivity was utilized in a study
of the gas sensing mechanism of sensor materials because various flammable gases could be
used as a quenching gas by including them in the He counting gas: 1
115
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
Compressor
He Gas
Vacu~
Fig. I0. C_o,ostat and counter assembly. 1: Cooling water for the compression; 2: pressure buffer balloon;
3: pressure gauge; 4: valve for heat exchanging helium gas; 5: bellows (vibration absorber); 6: expansion
engine; 7: insulation flange; 8: connector for signals and high voltage bias; 9: vacuum valve; 10: counter
gas inlet; 11:5 mm diameter SU8 tube for signal and high voltage lead; 12: heat exchange space filled
with helium gas; 13: proportional counter; 14: $HV connector for HV bias; I5: counter room; I6: copper
radiation shield; I7 and 18: heater and thermocouple for controlling temperature; 19: windows;
20: vacuum space; 21: outer vacuum jacket; 22: 57Co source for CEMS; 23: velocity transducer for
CEMS; 24: counter body; 25: anode wire (30 I,tm gold-coated tungsten wire); 26: specimen (a sm"nple
foil for CEMS measurements or 5vCo source for examining the counter operation); 27: collimator
(2 mm thick lead p~ate); 28: absorber (3 mm thick Lucite plate) (from Refs 53-55)
e) Eleclron multipliers
Channei electron multipliers such as the c h a n n e l m m and the channelplate s2 have i n h e r e n t l y
no energy resolution, end require a v a c u u m chamber. The channel electron multiplier has been
used for [CEMS at low temperature, S A W I C K I and his group have develeped the convenient
detectors using channel elecU'on multipliers. 6~ The typical detector for CEMS operated at low
temperatures between 4 arid 300 K is shown in Pig. 11 64 The sample and the channel electron
multiplier m'e installed in a sideways scattering geometry and cooled together either by using
a conventional Dewar or by inserting a detector chamber into a liquid He or iiquid N 2
container. A T K I N S O N and C R A N S H A W ~ consmacted the same detector so that the electrons
1!6
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
are quided away from the specimen by a controlling electric field, and enter the channeltron
with the optimum energy for detection. Count rate and spectra quality depend on geometry
and a properly shaped and graded collimator. The efficiency of channel electron multiplier
increased three times by coating the cone with MgO because the normal efficiency was about
10%' for several-keV electrons. 6~
7 ---Sample
vH:cguhUmHea~er-~ Cooling
"Block
icm
Fig. l 1. A configuration for lhe measurements of CEM spectra between 4 and 400 K (from Ref. 64)
f) Scintillation detector
The increase of the detection efficiency is a major consideration for CEMS in high
vacuum. A extremely 10w noise scintillation detector (SCD: Hamamatsu R1635-02 or R2557
photomultiplier with P-47 thin-layer phosphor) was used to detect several-keV electrons in
high vacuum as shown in Fig. 12. 67 The electron energy spectra of an 90% enriched STFe foil
are shown in Fig. 13. 67 The SCD is superior to the channeltron by one order of magnitude.
There was greater improvement achievable for samples with normaI isotope abundance than
for enriched ones. 67 SCD is advantageous for an electrostatic cylindrical mirror analyzer even
for DSCEMS 6~ although cooling is necessary in order to reduce the noise of the
photomuRiplier. UHV-ICEMS e• 69 were peffolTned under high vacuum. SCD is more
useful for lower temperature performance because the background count of the photomultiplier
can be further reduced2 ~ The performance of a channeltron and a low-noise SCD for
UHV-ICEMS applications was compared on the basis of measurements on different
samples. 7t,7z Criteria, limitations and possible improvements in high-performance M6ssbauer
spectroscopy, were discussed in assessing the different types of detectors in -racuum such as
channeltron, P-47 CsICl'I), and plastics. 73,74The channeltron provides higher performance due
to the substantial conMbufion of low energy (50-100 keV) electrons to the MiSssbauer spectra.
SCD is not sensitive to electrons of energy less than about 3 keV.
117
K. NOMURAet al.: APPLICATIONSOF CONVERSIONELECTRON
IW and signal
Cooli.ng feed-through
.\ H ~ ~ H ~ ~HU\HV~Chamber
. . . . .
Photomult~~'~!]
P h 6 t o m u l t i p l i e r H~"~[J:}U ~+---Turnable
(ttamamatsu ~[fi~.]] fl s h u t t e r
~:cl~uur:.l~ig~r
gg~~QuaQuartz disc
A S e i n t i l l a t i o n Detector
OChanneltron
' ' ' ' K-Conversion
4C
KLL Auger
A
20
0 I I I I I I I I
3 4 5 6 7 8
(keY)
Fig. 13. Electron energy distributions from an uncovered 57Co source placed into the sample position of the
CMA and using the following eleclron-detector: a) chaaneltron (Valvo X919L); b) scintillation counter
(Hamamatsu R1635-02 photomultiplier, cooled to 243 K, equipped with a P--47 phosphor film with
- 1.5 ~tm average grain size). The count rate values are normalized to 1 at 2.5 keV. The signal amplitude
discriminator levels were set just above electronic noise (from Ref. 67)
118
K. NOMURAet al.: APPLICATIONSOF CONVERSIONELECTRON
the XMS sensitive volume so the incident 7- and X-radiation was as low as possible. It is also
possible to reduce the incident 7- and X-ray flux reaching the detector to some degree by
using a thin-waUed chamber for incident y-rays.
Another type of combined counter was constructed as shown in Fig. 14,75 the surface, sub-
surface and bulk of amorphous ribbons were measured simultaneously using a triple combination
,Source [ " i
Fig. 14. Experimental set-up for simultaneous CEMS, CXMS and TMS measurement(from Refs 76, 78)
of CEMS, XMS and TMS by GONCER's group. 76,77,78,79,g0,81 The counters for y-rays, X-rays
and electrons were separated and shielded to minimize the mutual perturbation. In order to
shorten measuring time and to find the different states among surface layer, sublayer and bulk,
a combination counter is very useful from the viewpoint of practical measurement.
A combination counter with dual chambers was also used to measure CEM and XM spectra
together with reflection and scattering y-ray M6ssbauer spectra under total exte_mal reflection, s2
119
K. NOMURAet al.: APPLICATIONSOF CONVERSIONELECTRON
1,0
~, B
.
"x
.4.a
%
0.6
9 .
,,-,4 . 9 ~176
4.-.a
c~
,--4
• -'% \
0.2
5 10 {5
Electron E n e r g y (keY)
Fig. 15. The on-resonance electron pulse-height spectra recorded for a stainless steel scatterer with (A) and
without (B) application of the X-ray--elec~xoncoincidencetechnique (from Refs 88, 89)
proportional counter is too poor to discriminate 7.3-6.4 keV conversion electrons from the
photoelectrons emitted from 6.4 keV X-rays. BARA and B O G A C Z 8~ investigated the
performance of X-ray and e- coincidence for recording 57Fe DSCEM spectra, using a assemble
of He and Ar gas flow proportional counters. The coincidence technique efficiently reduces
the detector background and increases the magnitude of the MSssbauer effect. Spectrum A in
Fig. 15. represents only the K shell conversion electron selected. A reduction of electron beam
intensity caused by X-ray and e- coincidence resulted in a prolongation of spectrum storage
time by a factor of 2.82. A pronounced DSCEM spectra can be achieved both by selecting
the angle of the incident y-ray beam in addition to selecting the energy of the emitted electrons.
Eight DSCEM spectra were simult~teously recorded using a duplex layer of haematite (48 nm)
and magnetite (t92 rim) on a metallic iron substrate. The selected electron energy intervals,
the angles of incident y-rays relative to the normal to the sample surface and the percentages
of the total spectrum, contributed by each phase are indicated in Fig. 1639 The application
of the X-ray and e- coincidence technique for selection of the K shell conversion electrons
can improve the DSCEM spectra.
Proportional counters have a small efficiency for the low energy seconda13, electrons~
whereas channel electa-on multipliers have a larger efficiency for low energy electrons than
for high energy electrons.
b) Electron spectrometers
DSCEM spectra can be obtained in high vacuum by selecting electrons with a certain
range of energy and analyzing them in electrostafc or magnetic fields. BAVERSTAM et al. 9~
proposed in 1973 a method to deterrrfine the shape of line profiles from electrons scattered in
120
K, NOMURAet al.: APPLICATIONSOF CONVERSIONELECTRON
F~O~! 2 a 4 5 6
~,_ ,, . , o . ~.o . L .L .g_ .~.
11q
:eV
101
13,
~eV
10
1384 ~eV
I0
15,
:eV
i0,
15, :eV
lOq
15q
eV
i 0 0 ~ ~ "~" ~
1 1 [ t i !
-I0 -5 0 5 10
Velocity (ram/s)
Fig. 16. The depth selectiveand ang|e sensitiveCEM spectra.A to C recordedby registeringelectronsof selected
energies, C to F recorded at selectedangles of incidence(from Ref. 89)
thin fihus or foils. DSCEM spectra of layers with known thickness and depth (0.3 gm for
57Fe and 3 ~tm for '19Sn) were measured with the use of a [3:spectrometer. The change of the
energy distribution of resonance electrons was determined by BONCHEV et al. 93 The clear
experimental evidence of a sharp resolution in CEM spectra was demonstrated using a high
resolution electrostatic electron spectrometer by SHIGEMATSU et ai.gz
Electron energy spectra associated with the decay of 57Co to 57Fe were measured with an
ellipsoidal mirror analyzer as shown in Fig. 17.93 Spectrum B was obtained after covering the
121
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
3000 K-Conversion
LXY-Auger
2500-~" KLL-Auger
2oo, f
/I A
~ 1501 i B /l --160eV
~ ooo i L-Conversion
500 onversion
ll2eV ~,~ l
1 1 I I I I --l------- I
-T-"- ",t--&_.k_ ..... ,t -.------b--~--.--I ~,
0 i 2 3 4 5 6 ? 8 9 10 11 12 13 14 15 16
Energy (keY)
Fig. 17. Electron spectra associated with the decay of 57Co to 57Fe measured with an elfipsoid,{1 mirror analyzer.
The spectrum obtained for the 30 pCi 57Co source electroplated obtained after covering the source with
6.2 nm layer of iron (from Ref. 93)
source with 6.2 nm layer of Fe, in which energy loss was characterized due to inelastic
scattering electrons. The energy resolution of the spectrometer was set for 1.2 and 3% at
7.3 keV. The energy distributions from measured Mtssbauer spectra were consistent with
those of the Monte Carlo calculation by LILJEQUIST. 94 The range of depths was determined
by a nondestructive layer-by-layer analysis of materials. 95,96 The energy spectra of 7.3 keV
electrons passing through iron films covered with different thickness are necessary to
determine weight coefficients. High resolution electron spectrometers for DSCEMS cannot be
used for measurements at low temperature because of the low counting efficiency and
complexity.
122
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
constructed recently, Microchannel plate detectors were used (energy range from 0 to about
20 keV) so as to m e a s u r e simultaneously a m o m e n t u m range of about 4% with a resolution
of 0,5%. The spin-dependent relative conversion coefficients in iron and iron oxide were
measured.~a
The retarding-field electron spectrometer for D S C E M S ~13 was constructed and improved
so as to allow for energies up to 25 keV and samples with diameters up to 10 ram. H4 T h e
energy resolution could be varied between about 0.1 and 6% and the total transmission was
10% of 2n. The temperature of the sample could be controlled between 25 and 100 K. A thin
iron layer on a stainless steel substrate was measured in a U H V chamber with a base pressure
of 2 . 10 ~ Pa? ~4 A high transmission (14%) spherical electrostatic electron spectrometer was
constructed to work from T = 4 K to 350 K Y 5 However, the experiments at lower than 20 K
were not easy under 1.33. 10 -6 Pa because of the possibility of the s a m p l e ' s being covered
by impurities. H5
To suppress the increased background at high. temperature, the detector w a s s e t at a
negative potential of - 2 0 V and the screening grid at a positive potential o f + 20 V. The
equipment for C E M S was combined with thin film evaporation and a heater to analyse
deposition film at 800 K and under a pressure of 1,33 - 10~ to 10 v paT3
123
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
3. DSCEMS analysis
SMIT and STAPELE n6 presented an analytical method enabling DSCEM spectra to be
obtained from ICEM spectra and etch experiments as follows.
Weight functions give the probability, that electrons energy loss originates from a certain
depth in the sample. The number of electrons, N(v), that are emitted after nuclear resonant
absorption and counted in a CEM experiment at a velocity v of the absorber with respect to
the T-ray source, can be written as
d
N(v) = ~ T(x)A(x,v) dx
o
Where d is the thickness of the absorber, A(x, v) is the number of nuclear deexcitations
at depth x per unit of depth and T(x) is a response function of the absorber, or weight function.
The function T(x) is composed of two terms. The first gives the chance that conversion or
Auger electrons emitted after a resonant absorption at depth x are detected. The other terms
of T(x) yield the probability of detecting a photon emitted after a MSssbauer nuclear
absorption at depth x. If the thickness of the top layer and the MSssbauer spectrum of the
bulk are known, the MSssbauer spectrum of the layer can be calculated. By repeatedly
removing thin layers from the sample and subsequently measuring the CEM spectrum, a set
of spectra can be obtained, from which it is possible to extract the spectra belonging to the
removed layers.
La, Ga substituted yttrium iron garnet (YIG) film (about 5% enriched 57Fe) was grown
using the liquid phase epitaxy method on a gadolinium gallium garnet (GGG) substrateY 6
The sample was implanted with 10 ~4 Ne ions. cm -2 at 200 keV. The layers were removed
(a) (b)
:'.
.' ..,: ~. ~.
:.,.
~. -'~ ;': 9 .?~
-'5 6 :5 6
Velocity (mm/s) Velocity (mm/s)
Fig. 18. (a) 57Fe CEM speclra of a La, Ga substitutedYIG film implanted with 10~4Ne ions. cm 2 of 200 keV
taken at various depths. (b) Layer spectra derived from the observed CEM spectra shown in Fig. 18a
(from Ref. 116)
124
K, NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
chemically by etching with a strong phosphoric acid solution at 390 K. The observed 57Fe.
CEM spectra are shown in Fig. 18a), and the spectra of layers calculated in Fig. 18b). This
method is more simple, and substantially less time-consuming than techniques involving
electron spectrometers. KUPRIN and NOVAKOVA 117 studied systematically 57Fe DSCEMS
on samples with rough surfaces by changing the high voltage of a proportional counter, which
affected the depth profile. LILJEQUIST et al. have studied the theoretical expressions of
CEMS and DSCEMS since 1978. 21 The total transmission into various angular and ~nergy
intervals from different depths in a STFe absorber have been computed mainly by the Monte
Carlo method. The K- and L-conversion electrons as well as the Auger electrons and the
resonant photoelectrons were taken into account. H8 The surface roughness on conversion
electron scattering did not affect the CEM spectra so much. t~ Programs ft;r the i clonte Carlo
simulation in STFe DSCEMS have also been developed by LILJEQUIST. 12~
Analyzer Channeltron
- -- lensl-~ Sarce I
Fig. 19. Schematic view of the electron spectrometer for DCEMS studies showing the 150~ spherical sector
electron analyzer, electrostatic inlet lens, MOssbauerabsorber (sample),57CoMOssbauersource and ion
sputter fun, all parts being placed in an ultra high vacuum. (from Refs 92, 124)
125
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
200
io" .~~
200( 7.2key
]I ]I ~A /I ]I 7.3 10"
30i
"-"50 46"
0
4~
o 7.1 (D 400
(D
q-~
r-~ 50 60"
6.9
_.A~ _. 30
50C
72"
] / 6.0
-8-6-4-z 0 z 4 8
Velocity (mm/s) Velocity (ram/s)
Fig. 20. a) DSCEM spectra at 0= 10~ (almost perpendicular electron emission) for various electron-energy
settings V between 7.3 and 6.6 keV, obtained from the test absorber, i.e., a 21.0+ 1.0 nm thick layer of
tz- 57Fe (95% enriched) on a stainless steel substrate(19% enriched), b) DSCEM spectra at the electron
energy setting V= 7.2 keV, for electron emission angles 0 = 10%46~ 60~and 72~obtainedfrom the same
absorber as in Fig. 20 a) (from Ref. 124)
It was suggested that a surface layer with a mean depth < 1 nm could be observed at extreme
glacing angles ( 0 = 80~176 The angular effect of CEMS was also considered for thinner
surface layer by TOPALOV and PRIOKOVA. n3 The depth selectivity in 57Fe DSCEMS
was experimentally investigated by using a high-resolution electron-energy analyzer as shown
in Fig. 19. 92 DSCEM spectra were measured in ultra-high vacuum (6.6- 109 Pa) at different
electron energies (Fig. 20a) from 6.5 to 7.3 keV (with 2.7% energy resolution) and a different
electron-emission angles 0 relative to the absorber surface normal (from 0 = 10 to 72,
Fig. 20b), using a thin ~-Fe layer on a stainless-steel substrate. 124 The weight functions of K
conv~sion electron calculated are shown in Fig. 21. i24 It was confirmed that the surface signal
was ~ h a n c e d by measuring at glancing angles relative to the sample surface. The influence
of surface roughness on the surface selectivity in 57Fe GACEMS was small, lz5,~2~The electron
scattering for GACEMS was analysed by improving the conventional computational
procedures.~27
The ultra thin surface layers can be analysed at angles where total external reflection (TER)
takes place. Although the analysed layer under TER conditions is very thin (minimum
penetration; 2-3 nm), the techni/tue has not been widely used because of the very low
luminosity at glancing angles. Substantial progress was achieved by detecting the conversion
126
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
o., ov
~176 500 I000
tO
0
r, 7.3keV
4,-4 / (b)
q~
t~
7.2keV
7.1keV
6.gkeV
!ev
500 idoo
Depth (k Fe)
Fig. 21. Some typical theoretical K conversion-electronweight functions T ~v(x) calculated for the speclrometer
with 2.7% FWHM energy resolution. Curves are labeled by setting (V) value, corresponding to energy
E by V=V/E= 1.007. The selected angular interval is 0= 10~_+6~ in (a) and 0= 72~ + 6~ in (b), depth
(2") is measured in Fe = 0.0786 ~tg/cm2 (from Ref. 124)
and Auger electrons instead of the specularly reflected 7-quanta. RGM spectra 12s and CEM
spectra ~29were obtained under TER conditions. The reflection coefficient of 7r- and G-polarized
radiation from an isotropic medium are almost equal, and the anisoptropic behaviour of the
reflection process needs not to be accounted for. The main contribution to the background
comes from the yield of nonresonant photoelectrons. CEM and XM spectra were
simultaneously measured together with reflection spectra under by a Russian group. 82
GAM spectra are formed by scattering by both the electron shell and the nucleus. The
latter contribution is varied experimentally by changing the y-ray energy. In the absence of
nuclear resonant interactions the critical angle for a metal iron mirror is 0c = 3.8 mrad for
radiation with energy 14.4 keV. Although it took one month to get MiSssbauer spectra using
a 3.7 GBq y-source, the distinctive four Mt~ssbauer spectra were measured simultaneously by
detection of the 7-radiation specularly reflected by electrons and nuclei (RGM spectrum),
conversion and Auger electrons (CEM spectrum), characteristic X-ray (CXM spectrum) and
7-radiation resonantly scattered by nuclei (SGM spectrum) as shown in Fig. 22. The
asymmetry of the lines is due to the fact that the refraction angles and the penetration depth
of refracted radiation differ for energies less or greater than the exact resonance energy. The
line broadening is caused by saturation effects which arise even for very thin layers due to
grazing propagation angles of the refracted radiation.
127
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
1.7o-1 '
t1 , 0 0 ~ "'~'~""
1,02-{ 9 I
o9~-1 ~ z . ,
0.92-
The computer simulation on GAMS theory showed that the shape of the resonant spectrum
of the reflected wave intensity, in the case of a resonant film, differs considerably from the
case of a semiinfinite resonant mirror) 3~ This shape strongly depends on the thickness and
the properties of the film and of the nonresonant substrate.
128
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
nonresonant electrons from iron films both theoretically and experimentally. Emerging
electrons with energies below 50 eV come from low energy Auger cascades, low energy
shake-off electrons and secondary electrons being attributed to higher energy events. The large
number of low energy electrons permitted relatively short acquisition times (ca 1 h) and
enhanced surface sensitivity associated with the short range of very low energy electrons.
4 1 2 3
0 10 20am
Fig. 23. Orange spectromter; l: drive; 2: source; 3: absorber;4: coil; 5: e--detector;6: proportionalcounter (from
Ref. 137)
KLINGELHOFER obtained CEM spectra with very low energy electrons (0 to 15 eV) with
a high transmission orange type magnetic spectrometer as shown Fig. 23.137 This technique is
named as low energy electron MOssbauer spectroscopy (LEEMS). The em-iched 57Fe stainless
steel showed a high resonance effect of about 700% with count rates of 103 s-1, compared to
750% and 60 s-~ at the K-edge. Indeed, a sharp peak at energies below about 20 eV can be
seen in Fig. 24.137 The surface sensitivity of the resonant low energy electrons was determined
using nonresonant 56Fe metal and 56Fe stainless steel foils, coated with about 2 nm and 5 nm
57Fe, respective/y, and exposed to air after evaporation. ~38 Two-layer structures can be
distinguished from 5 nm thick samples. '39 LEEMS is significantly more sensitive to the surface
than conventional DSCEMS, but not as sensitive as Auger electron MOssbauer spectroscopy
(AEMS) using LMM-Auger electrons of 5004500 eV.
LILJEQUIST and LANG t4~ also investigated the intensity and surface sensitivity to be
expected by LEEMS from theoretical considerations. The weight function was calculated for
SVFe CEMS. Internal conversion electrons or KLL, KLM and KMM Auger electrons have an
129
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
Is
4000-
t~ 20
x ZO00-
== lO. O
, ~, ~---~K
8 15eV 730 3400 7900 i4i00
1.0
0.8 a)
4-.}
9,-4 O. 9
0.4 i , , , ~
O.I "-.., 4)
130
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
initial energy of > 5 keV as "high energy electrons", followed by low energy Auger electrons
(LMM, MMM, MMN) as "secondary electrons". A single internal conversion event in metallic
iron should imply an average of about 6.5 ejected electrons per Mtissbauer effect, of which
about 1.5 are contributed from high energy electrons and about 5.0 from low energy Auger
and shake-off electrons.a41 Most of the low energy Auger electrons have energies below
100 eV, and most of the shake-off electrons have energies below 15 eV.
SEILER m gave a semiempiricat formula for the case of a normally incident primary
electron beam
~(Er) = 1.11 8mE~.35(1 - exp (2.3EI.3s))
here, ~5(Er) is the secondary electron yield per incident electron as a function of E r = E/E,,
where E is the kinetic energy of the incident electron and E~ the kinetic energy E at which
8,, has its maximum value 8~. The values of E~ and 8,, depend on the surface material. For
an iron surface, E m = 4 0 0 eV mad 8,~ = 1.1-1.3.
LILJEQUIST and LANG 14~ assumed that the value of 8,, is increased by a factor of 2,
since primary electrons are emitted in essentially random directions from the surface. The
secondary electrons yield should have g - 1 for an Fe surface.
For the secondary electron yield, it was assumed that each K-conversion electron escaping
from the absorber surface is followed by ~ secondary electrons, while each escaping
relaxation electron is followed by 8R secondary electrons. The surface (S) and bulk (B)
M~Sssbauer signals are obtained by
o d
The weight function T(x) is the probability of a de-excitation at depth x. The surface selectivity
is defined as follows,
S
Q- S+B
Q depends on d. This theoretical treatment was compared with experimental data 137 as shown
in Fig. 25. The oxide layer mass thickness was estimated as about 2 nm Fe. There is a
discrepancy with experiment which may be somewhat decreased by adjusting escape depth
(XEsc) and the secondary yield. ZABINSKI and TATARCHUK also tried to determine weight
functions empirically. ~35 However, it is difficult to determine the LEEMS weight function in
general, because of the complex range of electrons of many different origins and of the
material variation in the secondary electron scattering at very low energies, whereas the weight
functions of conventional ICEMS aand DSCEMS can now be computed with considerably
better accuracy. ~4~
131
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
0 0
e~
~g
I
O i O
r., i t.~
L
-~
I ~o o i o
ed r 9
,--4 ~
O i
,-.4 i
s,. %"
a
O
t. L-
=~1
d:z
0 ~, 0
1~121 ~176
9-~ ,-4 ~
~
,4
O 0
u.~ ,?
132
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
a -Fe - RT 0 33.3
from Ref.154 )
although full information on the corroded surfaces cannot be obtained from M 6 s s b a u e r spectra
without k n o w l e d g e of the fundamental characteristics and structure of basic iron oxides, m
The characteristics and crystal structure of iron oxides, oxyhydroxides, and hydroxides are
shown in Table 3.
Hematite, (z-Fe:O 3, is red brown and has a trigonal system ( a = 0 . 5 0 3 5 nm, c =
= 1.375 nm). ~44 T h e magnetic transition (Neel) temperature is 965 K, and the spin is parallel
to (001) face arid normal to (001) face under and above 260 K (Morin transition temperature),
respectively. T h e Morin temperature of 57.5 n m particles is 166 K245
Magnetite, Fe304,is black and has a cubic system (a = 0.83963) nm). Fe(llI) ions occupy both
tetrahedral (A) and octahedral (B) sites in an inverse spinel structure. Electron hopping occurs
between Fe(II) and Fe(III) in B sites above 119 K ( T j Verwey transition temperature). FeOI) and
133
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
134
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
T i . 1 I I ,G-Fe
I I 1 T I ~ i i
I 01 t
-10.0 .0 10.0
Velocity (ram/s)
Fig. 26. Dry ice temperature CEM spectra of the corrosion layers form on iron by immersing in 3% sodium
chloride solulion of inilial pH 6.5 at 318 K for (a) 12 h (pH changed to 7.0), (b) 24 h (.pH changed to
7.3), (c) 48 h (pH changed to 7.7) and (d) 96 h (pH changed to 8.0) (from Ref. 157)
layer below an outer "y-FeOOH layer. The CEM spectrum displayed three ferric sextets in
its lepidocrocite part with magnetic fields of 44.8, 44.2, and 38.7 T at 10 K. They were
attributed to Fe 3+ ions having zero, one and more C1- ions as first nearest neighbours,
respectively. 160
Corrosion products formed in nuclear power plants are predominantly nonstoichiometric
ferrous cation deficient magnetite and lepidocrocite. Small quantities of goethite and haematite
were found in some samples. 16t Surface oxides produced on an iron surface during discharge
in water, ]62 and the corrosion process and its inhibition 163 were studied by CEMS and other
electron spectroscopies. The high corrosion resistance of stainless steel X1CrNil815 against
boiling HNO~ was found to be due to an SiO 2 layer formed on the surface. Almost no iron
oxides were formed, although the composition of the alloy close to the metal surface was
slightly influenced, t63
135
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
3. Passive films
It is hard to analyse uilra thin layers, such as passive layers, by ICEMS. However, sample
surfaces enriched with SVFe can be measured by DSCEMS. The first stages of corrosion of
iron in water and the passivating influence of H20 2 were studied by DSCEMS. ~6~The results
showed that a thin (4 nm) passive layer was detectable by DSCEMS. At room temperature,
corrosion was inhibited at H202 concentrations of 0.006 and 16.8%, while intermediate
concentrations led to the formation of y-FeOOH. The corrosion was not fully inhibited at
358 K.
AES, ICEMS, and DSCEMS showed that the layer formed on steel in a phosphate buffer
consists of y-FeOOH367 Only a thin intermediate layer formed between the cubic substrate
and the y-FeOOH was responsible for the passivity. 167,168The passive layer formed on steel
by anodic oxidation in 0.5M N ~ S O 4 solution contained iron only in the trivalent state. ~69The
thickness of the layer increased with the applied potential as well as with the passivating time.
Corrosion products on iron formed in a solution were measured with a proportional counter
at various temperatures of 6.3, 78 and 300 K. 170,171The layers consisted Of small particles of
y-Fe203. The passivation of low carbon steel was studied in a solution of 0.5M Na~SO4 +
+ 0.001M NaHSO 3 at pH 3.5172 and pH 6.5.173 The rate of the dissolution of iron was much
higher through the thick passive film formed in the presence of HSO? ions ~68than that formed
in the solution of 0.5M NaSO 4 without HSO? ions. It was found that the major components
were y-FeOOH and Fe3C, and that FeSO 4 - H20 could be identified on the low carbon steel as
a minor component. ~72,~74
The presence of sulfite ion induces pitting corrosion. At pH 3.5, Fe3C was detected in
most cases, and FeSO 4 - H20 was also detected after a polarization time of 90 min. 173 At
pH 6.5, the passive film contained only amorphous iron(III)-oxide or oxyhydroxide.
136
K. NOMURAet al.: APPLICATIONSOF CONVERSIONELECTRON
below a layer of T-FeOOH and ferrihydrite, t77 Atmospheric corrosion products of coated
weathering steel exposed for 13 years were analysed by XMS and CEMS: 7s The magnetic
hyperfine fields of fine o~-FeOOH and ferrihydrite observed in CEM spectra were smaller than
those in XM spectra measured at 160 K.
The rusts formed on pure iron and weathering steel after exposure to several wet-dry cycles
in an SO:polluted atmosphere have been studied. 179 Poorly crystallized o~-FeOOH and
quasi-amorphous ferrihydrite were identified as the main corrosion products. The rusts had
different particle size for pure iron and weathering steel samples. An intermediate corrosion
layer of superparamagnetic o~-FeOOH was formed only on weathering steel: g~ The surface
layers of iron plates exposed to the ambient atmosphere in different places were analysed by
CEMS to study the relationship between air pollution and corroded iron) ~l
The corrosion products of steel exposed to a sulfur dioxide (0.16 vol%) environment1~2in
hydrogen sulfide-nitrogen and hydrogen sulfide-oxygen environments ~s3 and in a hydrogen
chloride atmosphere ~84have been analysed by CEMS. The corrosion products from a Brazilian
oil refinery were confirmed to be FeS z, FeTS~ and FeS: s5
The hydrolytic oxidation of surface layers of iron fluoride hydrate x86 and the oxidation
process in polished steel ~g7have been studied. The effect of polishing a stainless steel sample
was also analysed by CEMS and XPS: 8g
5. Thermal corrosion
The surface contamination on iron in a vacuum system was studied by DSCEMS) s9 In an
oil-diffusion-pumped system iron carbonate was found after ix'on was annealed at 1023 K for
several hours.
The initial oxidation on an 100 nm thick 57Fe single crystal (110) face was studied at
548 K in the pressure range 2.7 - 10~ to 1.0~ P a : ~ Only magnetite was formed at 2.7.10 -2 and
1.0-6 Pa and a magnetite/haematite conversion occurred at 0.27 Pa. DSCEMS was used to
measure qualitatively the depth distribution of the oxide phases.
Silicon steel (Fe-3% Si) after a thermal pretreatment was covered by insulating layers,
consisting of an outer layer of ferric oxides and a large amount of inner Fe~SiO4 (fayalite)
layer. An additional wustite was contributed as shown in Fig. 27) 9~ The clusters of SiO4 was
formed by internal oxidation/63 The f-factor of fayalite was determined experimentally
(ff~y,~to/fa-Fe=0"47 +0"04) j91 When silicon steel (Fe-3w%Si) was annealed in H 2/H20 at
elevated temperatures, a92 carbide was formed in the temperature ranges from 773 K to 993 K,
indicating that decarburization was hindered. Above 1073 K, the layer consisted of fayalite
and iron oxides. At 1120 K, the onset of iron oxide was found to be formed at the oxygen
potential a 0 = 0.33) 92
It was shown from CEMS that the oxidation of an ultra-thin 310 stainless steel foil
deviated from the expected oxidation behaviour due to the effects of chromium depletion: 3
The oxide layers on stainless steels (SUS304 and 316) heated up to 1073 K were analysed by
CEMS. 194.t95 It was found that iron ferrite compounds were produced in the top rust layers on
stainless steel heated up to 873 K, whereas above 873 K paramagnetic iron species were
produced in the intermediate layer. The paramagnetic peaks are considered to be due to a
superparamagnetism of fine e~-Fe203, which is dispersed in Cr203 layers.
137
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
104
I0~
102
.,-4
I01
i0 i c~, u(d)
,' , (b,)]
I(a)
I0~
(D
;>
..-4 102
r
101
10(
I I
<eL
,',
(b21 I(a) ,I
-10 "5 6 5 10
Velocity (ram/s)
Fig. 27. 1CEM spectra of two samples of silicon iron after the first anneal. The solid fines show the contributions
from c~-Fe(a), fayalite (b), Fe3§ oxide (c) and wustite (d) (from Ref. 191)
the surface coating to water vapour gave a partial oxidation of iron(II) phosphate to an iron(III)
hydrate. Phosphating of iron and steel with different phosphate solutions led to various
coatings that differed in morphology and compound composition. The states of iron in zinc
phosphate coating, calcium zinc phosphate coating ~99and manganese phosphate coating 2~ have
been characterized. Phosphophillite, Zn2Fe(PO4) 2 94HzO , Scholzite, (Ca2Zn)(PO4) ~ - 2H20, and
Hureaulite, (Mn,Fe)~H2(PO4). 4HzO , are the main constituents of zinc, calcium-zinc and
manganese phosphating on iron and steel, respectively. A little Fe(m) compound was included in
many phosphate coatings, whereas Fe(II) phosphate compounds were grown in the coatings
with the increase of dipping time. M6ssbauer parameters of phosphate compounds synthesized
are listed in Table 5. The peak ratio, (172+ Ps)/(P, + Pa), of substrate iron beneath the coatings
138
K. NOMURA etM.:APPLICATIONSOF CONVERSIONELECTRON
Vlvlanlte
Fe3(PO4),.SHzO 1.25 8.04 ( from Ref.2O5 )
1.21 2.54 i
FezPO4.4H20 0.42 0.59 i
Amorphous Fe(PO4)?H20 0.37 0.78 i by Fe phosphatlng
Barbosallte
Fe3(PO4)~(OH)z 1.12 2.02 !i Fe2+ ratlo: i
0.36 0,5 i Fe3§ : 2
Phosphophylllte
Zn2Fe(PO4)u.4H20 1.26 3.40 by Zn phosphating
Zn=Fe(PO4I=-2H20 1.16 2.54 > 168"C~dehydration of
i.i 2.1 phosphophyllite
r(Zn,Fe)3(P04)2 1.26 1.99 > 277"C (8-eoordl.slte)
1.15 2,71 (5-eoordl.site)
Seholzite
Zn=Ca(PO4)=.2H20 1.27 2.3 by Ca and Zn p h o s p h a t i n g
Hureaullte
(Mn,Fe)sH=(PO4)4.4HzO 1.26 2.47 by Mn phosphatlng
1.23 1.58
1.23 1.20
Wolfeite
(Mn,Fe)=(PO4)(OH) 1.25 1.88 >350"C dehydration
1.18 2.38 of hureaullte
i.I 1,77
( from Ref.202,203,207 )
decreased with the increase of the phosphating periods as shown in Fig. 28. '99 It suggested
that the roughness of iron substrate increases with phosphating. It was confirmed t h a t
particularly deep etching on ferrite areas due to zinc phosphating caused a considerable
reduction limit} ~
Barbosalite was found as one of the precipitates in the phosphating bath. The thermal
products of phosphophyllite, the thermal behavior of zinc phosphate coatingsz~ and many
kinds of iron phosphate compounds z~ were investigated by Mtissbauer spectrometry. Natural
single crystal vivanite2~ samples were also studied by TMS and CEMS. An additional
doublet appearing in the samples after vacuum treatment was ascribed to a tetrahydrate
phosphate compound appearing at the surface due to dehydration. Heating at 413 K in dry
air for 15 to 240 min. caused a higher oxidation and decomposition rate at the surface region
139
K. NOMI.NA et al.: APPLICATIONS OF CONVERSION ELECTRON
than in the bulk of vivianite2~ although the surface region of oxidized vivianite had higher
resistance against oxidation than the bulk. TM The highest rate of the conversion Fe2+---rFe3+
was found in air around 390 K for pure vivianite, while the samples ground together with
boron nitrite showed a very different behaviour. The oxidation process was considered to be
due to two competing processes: oxidation by oxygen diffusing into the vivianite fl'om outside
and auto oxidation by decomposing crystal'water. 20~
1.4
i\
\
_ \
\
\
o"81. 0- "•..
0~.~
.,.-~
bl r
N0.
O O 0.
~,4.a
6
I I ...... I
30 60 90
Immersing ~ime (s)
Fig. 28. Effect of immersing time on peak ratio of (P2 + P5)/(PI + P6) of Fe substrate beneath zinc phosphate
coating
2. Oxalating of steel
Mild and stainless steel were treated in an oxalate solution. The QS of the Fe(II) oxalate
produced on the stainless steel was slightly smaller than that of the Fe(//) oxalate on mild
steel. The thermal properties of axalate coating were similar to those of FeC204 - 2H~O. It was
confirmed from the results of CEMS that the oxalate coating works better as a lubricant rather
than as a corrosion-resistant material, especially at the surface of stainless steel. 207
3, Nitriding of steel
Several CEMS studies of nitrided surface of iron have been performed since 1978. 208
Mrssbauer parameters of iron-r~;trogen-carbon compounds are listed in Table 62o9 for the
analysis of surface treatment of steel. By comparing these with TM spectra of chemically
synthesized nitrite powder, it was confirmed that nitrided surfaces are mixtures of Fe4N and
Fe3N structures with a certain nonstoichiometry, z0~
Among the various methods for alloying with these elements, surface treatment by use of
ion implantation2o9 and laser beam z~0 have been of particular interest recently. These
applications will be described in other sections.
!40
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON'
( from Ref.209 )
4. Boronizing of steel
The surface layer slructures of steel2H and iron212,2~3boronized in crystalline boron powder
were characterized by CEMS and XMS. In addition to an inner Fe2B layer and an intermediate
FeB layer, a third compound of FeB x = (2"> 1) was contained in an outer layer of the boride
coatings.2~ Carbon free Fe-Ni alloys (12 and 20 w% Ni) were analysed by XRD, XMS and
CEMS after boriding at 1273 K for 20 hours. 2~4 Besides (Fe~NiI_)2B and Fe~li~_~B, a third
boride phase rich in boron was detected in the outer borided layers of the alloy specimens.
(Fe~li~ ,)2B was present only in the deeper part and the outer surface layers consisted of a
nickel and boron rich boride and a superparamagnetic oxide.
Pure Fe2B and FeB powders were compacted and oxidized for 1 h in flowing oxygen in
the 573 K-723 K temperature ranges. 215 Both oxides and oxygen-free compounds were
produced by oxidation. These Mfssbauer parameters are listed in Table 7.
Three F e - C - C r alloys containing up to 5.64 w% Cr were borided for 15 hrs at 1123 K
with a B4C-base powder mixture and then the borided layers were characterized by using
CEMS, XMS, XRD, metallography and microhardness measurements. 216 T~-e mechanical
ha mess of the innermost F%B single-phase layers was related to the extent of
crystallographic order. The influence of chromium on the thermochemical boriding of iron
alloys was studied using powder of a 13 w% Cr steel borided with mixtures by widely
varying boron potentials. 217
The process occurring at the surface of iron in contact with fluoride activated B4C powder
mixture at 1123 K was investigated by CEMS.2~8 The possibility of passing from iron boriding
to iron siliciding was shown by dilution of SiC with different silicon compounds. Single phase
and compounds of boride coatings were grown on iron using B4C - base powder mixtures
oxidized for 1 h in gaseous oxygen at temperatures up to 1123 K as shown in Fig. 29. 219
141
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
sextet ~ FeBx
XMS 0.02 0.24 9.4
(l<x=2)
........................................................................................
i...........................................................................................v
Fe-C-l.26wt%Cr . . . . . . . . . . . .
sexZet 8
Fe-C-5.85wt%Cr -0.75 2.07 ....
5. Galvanizing of steel
Fe-Zn intermetallic compounds produced on galvanized steel were characterized by
CEMS. 2z~ From the top surface the phases consisted of the (, t~ lp (palisade), 81k (compact)
and /" phases. The M6ssbauer parameters are listed in Table 8. n~ The structures of the
electro-deposited Fe-Zn alloys were as follows, nz (1) The deposits of 0.9-17 w% Fe had
hexagonal structures corresponding to the iron supersaturated r/-phase. (2) The deposits of
18.5-40 w% Fe had bcc stxuctures similar to the F-phase. (3) The deposits of more than
50 w% Fe had a bcc structure corresponding to the zinc-supersaturated a-phase. The
morphology of the Fe-Zn intermetallic phase was classified into three types: outburst
structure, fine granular structure, and pillar-like structure. The formation of the outburst
structure was accelerated by decreasing solute carbon content in steels. Phosphorus inhibited
this formation when solute carbon was combined with a carbide forming element such as Nb
or Ti. For electrodeposited Fe-Zla alloys with > 52 at% Zn, CEM spectra consisted of a-phase
and Zn-Fe intermediate phase. TM Average H~ and IS values were correlated with Zn
concentration.
142
| K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
(a)
1.08
i. OC ---~ ....... ! ~
o= (b) II. ,,1
.,--I
(D
>
'+.a
'~ J \
-
= 1.OC
,--4
1.0~ (c)
t
1.0 ~ " i
tI L--It ]I
t ,, t ,, t ,, IVIi v]i i
143
K. NOMURAet al.: APPLICATIONSOF CONVERSIONELECTRON
6. Carburizing of steel
CEM spectra revealed that the uppermost surface layer of a carburized and quenched steel
was almost qt-austenite and that the surface layer of this sample consisted of c~-martensite and
"/-austenite. Iron carbide was not formed in the surface layer of a carburized and annealed
steel.2Z3 9
The transformation of retained austenite phase in low-alloy steel,224 and the origin of the
remarkable work hardening at the surface of a'high manganese steel (Hadfield steel)zz5 were
investigated by CEMS. The decarburizing occurred at the surface, cx-martensite had no relation
to work hardening. A spring steel Fe62SiCrs,zz6 was treated thermomechanically at high
temperature, and the distribution of interstitial carbon in iron alloys and the isochronal kinetics
of the aging of martensite zz7 were studied by CEMS.
b) Fe/Ti alloy
The surface layex ~ of actived iron (FeTi)236 and reactions occurring in thin films of FeTi
during initial activation and cyclic deactivation for hydrogen storage23v were analysed by
CEMS and XPS. As shown in Fig. 30, CEM spectra of a protective Pd coated specimen
showed the singlet of FeTi (IS = ~ . 1 5 mm/s) for annealing and reduction treatments. Thin
Ti and TiN films on an iron substrate were studied by CEMS. The intermixing of Ti with Fe
in Ti and TiN films onto argon plasma exposed iron substrate at various temperature and
144
K. NOMURAet al.: APPLICATIONSOF CONVERSIONE ~ O N
b)Annealed /I "
,,!A I
A, I
I----:-,,0.:-.---.I
9 l.'~ *"
// - V" I\I I I
Ik~ L'-J-
FeTi I
145
K. NOMURAet al.: APPLICATIONSOF CONVERSIONELECTRON
respective!y.245 The hyperfine distributions P(H) between granular and plane types were
different, and the P(H) of the surface were a little smaller than that of the bulk of powders.
These powders exhibited DO 3 Structure after annealing.
Fe-Si-A1 alloy films deposited on a cooled substrate contained superparamagnetic
components in addition to magnetic components, The fine grains yielded a random orientation
of magnetic spins in the films. After annealing the sputtered films above 773 K, the spin
orientation became perpendicular to the surface, probably through the growth of columnar
crystals accompanied by the diffusion of Si substrate into the films. 246
Iron and iron-cobalt (40 at%) thin films in the range 20-1500 nm were deposited on
various rotating substrates in UHV conditions (2.10-\Pa). 2~7 The spin orientation, deduced
from CEM spectra, rotated from in plane (less than 100 nm) to out of plane (nearly
perpendicular) position when the thickness increased. This behaviour was related to the
columnar structure observed by TEM and explained by the enhanced surface diffusion in the
low residual pressure. At low evaporation rate, the columnar axis must be oriented toward the
vapour beam direction. 247 The spins stayed along the film nnnnal up to 573 K and then the
random orientation was obtained when the annealing temperature reached about 873-973 K.
2, Amorphous alloy
CEM spectra of FexGe~_~ amorphous thin films were measured at low temperature and
analysed 248 to characterize the structure and magnetic properties of sputtered thin films of
Fe079Geo2j. MASSENET and DAVER (1977) 249 have studied on a series of amorphous
FexGe~_~thin films. QS and IS measured forx ranging from 0.08 to 0.53 were 0.5 and0,35 m/s,
respectively. When no ferromagnetic order was observed, the Fe atoms had no magnetic moment
for x < 0.4 because the d'levels were too wide as a result of hydridization with the sp Ge states.
For higher concentration, the Fe atoms ordered ferromagnetically at low temperature.
It was found from CEMS that an amorphous iron was produced by thermal decomposition
of earbonyl iron in liquid phaseY ~ The amorphous iron film contained about 4% carbon, which
contributed to the stability of the amorphous state.
Amorphous FeSi films deposited at 77 K and at room temperature were studied by CEMS.
The QS values in the CEM spectra were larger by aboat 0.04 ram. s-t than the QS obtained
from TM spectra. Further, QS was found (a) to decrease with the thickness of the film,
and (b) to be 25% larger for an amorphous film than for a crystallized one (of the same
thickness). The crystallization was found to start at 513 K for a 30 nm thick film. TM
The Fe-Si thin films,252 the compositionally modulated Fe~Si/Si amorphous films, 253,254
amorphous FeBSi and (Fe78B13Sig)/silicon films255,~6 have been characterized by CEMS.
Amorphous Fe83Bt7 ribbon 257 and Fe80Bz0 metaglass258 were also analysed by CEMS, using
a proportional gas detector for conversion electrons with discrete energy intervals of 11.5 to
14.5 keV, 6.6 to 9.1 keV, and 5.1 keV, and X-ray with 6.4 keV as shown in Table 9. 257 The
crystallization of dull and shiny surfaces and bulk was compared for amorphous
Fe~0.sBlzSi45C3, Fes0.sB12Sir.sC1259 and FevsB~ISigC2 metaglasses. 66 The lowering of the
crystallization temperatures was observed in the surface of the ribbon samples. This implied
the increase of carbon concentration and the decrease of silicon in the surface layers. Further,
the transformation in the surfaces caused the magnetic moment of the amorphous iron
component to be perpendicular to the ribbon plane because of stress to the bulk. The first step
of the crystallization process is the precipitation of ~-Fe and Fe-Si(several at%) phases and
the second is the transformation of the remaining amorphous phase into FezB. However, the
formation of Fe3C was detected in the surface of o~-Feso,sB12Si4.sC3,259The temperature range
of the FeroMg4o amorphous thin films to crystal transition was determined by CEMS and
TEM? ~~ A superparamagnetic like behaviour of the films was revealed by measurement at
77 K.
146
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
i from Ref.257
147
K. NOMURA etal.: APPLICATIONS OF CONVERSION ELECTRON
3. Hydrogenation
The role of light interstitial elements in metal has been reviewed and discussed. 2t~
Hydrogen, nitrogen, and carbon, residing on interstitial sites of the host lattices, are capable
of inducing noticeable changes in the physical properties of the material. Hydrogen uptake by
different intermetallic compounds can lead to completely different results, depending on the
chemical affinity between hydrogen and the constituent elements of the compounds. The
several distinct hydride phases with considerable hydrogen content can usually be found and
identified by M6ssbauer spectrometry. Alternations of the intermetallic hydride are frequently
observed and discussed. 2~~
The effect of hydrogenation in Fe89Zr~ amorphous alloys was studied. 273 A magnetically
split spec~um resulted from increasing the hydrogen content. The changes of M/Sssbauer
parameters depended on the annealing temperature before the hydrogenation as well as on the
cathodic potential of hydrogenation. The magnetic states of amorphous Feg0Zrl0 and FeglHf9
varied with the charge of hydrogen 274 because hydrogen was trapped near the Zr sites and the
magnetic interaction among iron atoms was enhanced.
148
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
melting resulted in the low temperature crystalline or-FeB modification, indicating the
important role of surface nucleation. 280
In the case of F e - Z r ingots in the 25-80 at% Zr composition range, TM disorder and
amorphization were observed even on the as-cut surfaces due to the mechanical processing.
Besides a significant enhancement of the non-crystalline fraction, the surface melting by ns
laser pulses also resulted in the appearance of new metastable phases. Solidification via an
extremely high cooling rate thus produced an amorphous phase. TM Coatings ,,g Ni and Co
b a s .i alloys were prepared by laser alloying and analysed by CEMS. 282 The annealing effect
of laser pulses from ruby and neodymium glass on 57Fe ion implanted in silicon was
investigated. 283 The irradiation by a ruby laser with a power density of 1.5 J . cm -2 and a Nd
laser with power densities > 10 J. cm -2 gave a quadmpole doublet. This was approximately
due to the precipitation of FeSi 2.
149
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
~X 210 Cr 12
lO0rsample 4 -1000
1laser treated
r2700 W
80(. 1.2 • • • -800
~ 60- -600 ~
eSS
[ ] martensite
>
.,-I • 0 austenite (D
40- Ak carbide -400 -~
=
20- -200
]
0.6
~ idoo
depth (/z m)
Fig. 32. Depth profile of the fractional areas of the various phases and of the mechanical hardness after laser
irradiation. The carbon concentrationsof the austenite phase (in wL%) are indicated in the figure (from
Ref. 210)
150
K. NOMURA et al,: APPLICATIONS OF CONVERSION ELECTRON
i.(}2
1.00 ..L
r i i i i
I I l I I
I I 1 , t I
I I / I I I
L I I I ,, I I
O
9~ 1. OI .A_
L..I
9 .~-I i t I i v l
II .... l ~ I l I
, I I ..I I I
l~ I I I I I I
.,--I
1.06
1.0:
1.0C ~_
I 1 [ 1 I
I I, I I I
1.04
1.00
I
-6
!
0 2 4
.
V e l o c i t y (mm/s)
.
Fig. 33. XM spectra of the surfaces. (a) sample 1: CrB2 alloyed 1750 W, (b) sample 2: CrB2 alloyed 1250 W,
. . .
6
t
(c) sample 3: unalloyed 1750 W, (d) unlreated (from Ref. 276)
The spin-tilt angle from the surface normal increased from the bulk value up to 30 degree at
the top of the surface as shown in Fig. 34. This phenomenon was explained by the widening
of the domain wall with toward the surface# 87
5VFe-enriched, epitaxial Y~3FesO12 films were implanted with 50 keV and 100 keV Ne ions
with a dose of 4 , 1014 Ne* cm-L DSCEMS was performed at 300 K and 30 K ) 8g The 50 and
t00 keV-implanted samples formed an amorphous layer on top of an almost unperturbed YIG
layer and a buried amorphous layer, respectively. The high temperature annealing effect of
ion implanted garnets z89 were studied by CEMS together with X-ray standing waves 29~ or
X-ray double-axis spectroscopy# 91 The magnetic and structural properties of calcium-doped
YIG films formed by annealing in a hydrogen atmosphere TM were investigated. The orientation
of the easy axis of magnetization was different between the two layers: it is in plane in the
151
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
O@Electron
Spectrometer
z ~ k P r o p g r t i 0 i i a l ....
Counter
~ [~llTransmission
,~ 0 b) - new surface
b) after etching
z0
1.5 ,,
1.0
~1.5:(c)
OAF] a-site
O~kll b-site
1 9~
.--4
" a-site
u
E
O. 5 b-site
I
0 0.1 0.2 0 3 0.4 0.5
Depth (~zm)
Fig. 34. Spin-flit angles from the surface normal direction (a), spectral area ratios of d to a sites patterns (b),
and linewidths for two sites (c), as a function of the depth (from Ref. 287)
film bulk (particularly in the [011] or [011] directions) and lies along the < 111 > directions
in the thin surface layer. The behaviour of the easy axis of magnetization in the two layers
was explained as a pure magnetostrictive effect} 9~
The specific chemical effect of hydrogen implantation of 57Fe-enriched YIG was compared
with a pure damage effect from a shallow Ne ion implantation by GEMS. ~92,293The MSssbauer
parameters obtained by computer fitting of four sextets in YIG are listed in Table 10. Ne and
H implantations affect the tetrahedral sites preferentially. Moreover, for about 15% of H
implantation the presence of a new "dH" magnetic sites among the tetrahedral sites was clearly
correlated with the ~ormation of O-H bonds. 294 The remaining 85% responsible for the
reduction of iron gave rise to the broadening of Mtssbauer peaks and the decrease of hyperfine
field.
Y3FesOI2(YIG), Y3A150~z(YAG) and Gd3GasO~2(GGG ) single crystal garnets were
implanted 29s with 10 H Fe-cm-L For YIG and YAG large a-Fe203 particles were formed after
annealing, and the Morin transition was observed, whereas for GGG no Morin transition was
observed.
152
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
Channeltron setup
Room temp. Lig.N, temp.
( from Ref.294 )
Substitution of Bi ion into to YIG increases the Farady rotation of YIG from 200 to
l0 s deg/cm. Sputtered Bi3F%O~2(BilG), YIG and BiYIG were compared. The hyperfine
field at the tetrahedral site (d) increased to 42,6 T by substitution of Bi ion, indicating a
decrease in the intrasublattice exchange interaction rather than the decrease of the tetrahedrat
iron moment, z96 Under the effect of the diamagnetic dilution of the diamagnetic yttrium
sublattice the magnetization of BilG decreased with respect to YIG, 297
CEM spectra of a (111) oriented single crystalline BilG were also measured at 6, 78, 290
and 670 K. 2~'s QS values for octahedral (a) and tetrahedral (d) sites measured at 670 K are
smaller than those found in other related garnets, R3Fe5OIz with R = Lu-Sm. The various QS
values against the reciprocal volume, 1/V (V = a3, a is the lattice constant) are shown in
Fig. 35. The magnetic and quadrupole hyperfine interactions indicated continuous effects of
lattice expansion. The temperature dependence of the sublattice magnetization has been
explained by the two sublattice molecular field model} 98 YIG films substituted by Bi, Ti, Ga
and La was studied b y CEMS} ~9 Ti-doping increased the transparency.
Single crystal iron borate (FeaBO6) is also expected to be used in magneto-optical
applications. The phase transitions in single crystal Fe~BO6 were studied by simultaneous
153
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
Bi Sm Gd Dy Y YbLu
! ; i i i
1.( - (b)
O.
co
"~0.6
v
o.4
(a)
0.2
1 1 I I I
4.9 5.1 5.3 5.5
1/V ( X l O -4 ~-3)
Fig. 35. Dependence of the qaadrupole splitlings of various iron garnets upon the reciprocale volume (from Ref.
298) (a) a sile, (b) d site
J 4 5 6
.Vu --
i;t: 9
::2
/
2,.
e
J
i
'A
Pd
p
r~
Pt
p
?.: tI
'i
.z 'j
Fig, 36. Multi purpose detector, 1) 57Co sQurce; 2) collimator;, 3) sample; 4) beryllium foil; 5) heater; 6) point
supports (from Ref. 300)
154
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
12.5 ,._....;...
11.5 ( :~
10. , , , 1 I , I I I I I
-4 -2 0 2 4 6
155
K. NOMURA etM.:APPLICA~ONS OF CONVERSION ELECTRON
156
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
0.4 (a), i t , , , i
O. ~ ; ' - ~ . . . . . . . -o . . . . . . . . . . . . . ~." 5C
ol
. . . . . . -z/~ t-d ....... -9. :~,'-':. . . . . . . o-.
0A ix ...... 4C
.~176 ~--~ ..... ~A
O. ..-a- ..... tJ 3Z 9
..-4
"'El ....................... I3" .~ 7.C a . . ~ AC
o. [3A
9 -""'~
o. OB
.,-I AC C)
(
1 2 3 4 5 6
X~, (~) X~~ (%)
Fig. 38. (a)IS, (b) QS, (c) linewid!h, and (d) relative area of the doublets A, B and C vs. x of YBa-zCu3 xFexO7
(from Ref. 308)
157
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
W(.110}//k.(30 OK)/Ag(300K)
1701D =
O.
160
222
59d
570
585
"0.98
x
to 573
o
r,D
123C 9 1.09 ; A427
121C
325
31E
-8-6-4-20246 ""~-8-6-4-2 0 2 4 6 8
Velocity (mm/s) Velocity (mm/s)
Fig. 39. CEM spectra of Fe(1 lO) films consisting of (D + 0.05) bulk atomic layer of pure 57Fe, prepared on
W(110) at TF~= 300 K, coated by Ag at Thg= 300 K. The spectra were measured at Tm= 295 K. They
were fitted by one single line (a') and four sextets [(a"), (b), (c) and (d)], with relative intensities as
indicated by the finger prints (from Ref. 333)
158
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
is known that the enhancement above about 50% results in a ferromagnetic surface even above
the Curie temperature of the bulk,
R A D O TM had noted in 1957 that the surface or first layer magnetization m, should follow
the Bloch law,
rn, = (1 - b 1 T3a)
with a spin-wave parameter of the first layer b I = 2b 0, enhanced twice in comparison with the
bulk parameter b o .
The magnetic hyperfine field H~n (T) follows the same temperature dependence as the
magnetic m o m e n t m of the electron shell. The proportionality between Hin (T) and m (T)
25~
W(110)/0.82 (475K)/Ag (3 IOK)
23C t T=274K
&-.
0
co
301
~i=2 8
2K
28~
28~ .... " -:
z8c8
-8-6-4-2 0 2 4 6 8- 4-'z 6 . 8
Velocity (mm/s) Velocity (mm/s)
Fig. 40. CEM spectra of a film W(110)/0.82 (475 K)/AG (310 K) (0.82 bulk layers of STFe(ll0), prepared at
T v e = 475 K, coated by Ag at Tag = 310 K, fitted by a superposition of one magnetic component
(11/6:12/5 : 13/4=2.6 : 0.3 : 1) corresponding to magnetization along [ll0], and one nonmagnetic single
line. Line broadening at 87 K by vibrations in the cooling system. For all other temperatures, the line
width (FWHM) is given b y / ' = 0.40 + 0.06 mm/s (from Ref. 334)
159
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
is known from bulk materials. Therefore, local analysis of m (T) becomes feasible using
a probe layer of 5VFe. WALKER et al. confirmed the enhancement of thermal decrease
near F e ( l l 0 ) / A g ( l l l ) interfaces. 332 For a probe of 1.5 atomic layers of SVFe near the
Ag-coated surface of a fitm of 30 atomic layers, a Bloch law with b~ = 12- 10 -6 K -3/2 was
obtained. It showed 324 a surface enhancement b~ /b o = 2.3, compared with the bulk value
b o = 5.2. 10 4 K -3~.
A detailed analysis of F e ( l l 0 ) films on W ( l l 0 ) , coated by Ag, again showed the
enhanced thermal decrease of the first monolayer, where the centre of the film followed
nearlY the bulk Bloch law. Comparison of b~ = 13.3.10 -6 K -3n in the Ag-coated surface
with b~ = 6.2- 10 4 K -3a from the film centre resulted in an enhancement b o / b o = 2.15.
The magnetic moments are enhanced in free surface of transition metal ferromagnets. The
reduction of H~, (T) in the first monolayer was combined with an enhancement of the magnetic
moment by at least 20%, as shown in Fig. 39. 333 The CEM spectra of pseudomorphic films
measured at low temperatures are shown in Fig. 40. TM
For a Ag-coated ferromagnetic monolayer Fe(110) on W(110), 334.335 a reduction of H~, (0)
from 34 T (in bulk) on 12 T in the submonolayer was connected with an increase of the
magnetic moment from 2.22 to 2.53(12) P-B-
The layer-by-layer analysis of 57Fe/Ag superlattices and epitaxial 21-monolayer Fe(110)
films on W(110) was carried out using in situ CEMS. 336.337,338The temperature dependency of
H~, for films of different thickness is shown in Fig. 41. 339 The local structure of the H~, (T)
36, 36
_~.~ High field component
35! 9 W(llO)/8.6/Ag 35
L"-----._"~ 0W(110)/5.3/A.g
34
33
32 32
v
z2
:ff 21 ', 30
2O
19 ""- 19
Low field co %" o
18
T 1 I -. ~
160
K. NOMURAet al.: APPLICATIONSOF CONVERSIONELECTRON
near Fe(110)-surfaces was analysed for the Ag-coated surface at 90 < T < 300 K and for the
free surface at 300 K. 34~The data of the free surface were extrapolated to the ground state,
resulting in a clear spatial oscillation, H~, being reduced in the first monolayer by 0.75 T and
enhanced in the second monolayer by 0.77 T.
Strongly reduced Hin values of Fe(100) near W(100) can be explained 34~ by a spatial
oscillation. Spin-wave parameters in the first monolayer were enhanced by a factor 2.6 in the
Fe/W and a factor 3.1 in the Fe/Ag interface, respectively, indicating a moderate reduction of
exchange in this interface. In the first monolayer below Ag, two components of Fe were
observed with different hyperfine fields. TM
Ultrathin films (10 to 17 monolayers) of fcc Fe(100) grown epitaxially on Cu(100) were
found to be paramagnetic at 295 K by 57Fe CEMS in UHV. 342 Below TN = 65 • 5 K, fcc-Fe
films are magnetically ordered and show a small average hyperfine field of 1.1 T at 29 K for
10 monolayers, indicating a small atomic magnetic moment. The fcc Fe(100) stabilized at a
lattice constant/c~[ose to that of Co has an antiferromagnetic ground state, 342
The magnetic properties of (111) Cu/Fe multilayers grown on Cu underlayers of several
thicknesses (200-50-5 nm) on cleaved mica have been investigated by CEMS and SQUID
magnetometry. 343The results suggested that 2.5 monolayers of y-Fe fnterfaced with Cu evolved
partially from paramagnetic to ferromagnetic states as the Cu underlayer thickness was
reduced to 5.0 rim.
Magnetic hyperfine fields near the Fe/Cr interface in epitaxial thin film structures with
(110) and (100) orientation were analysed by in situ CEMS.344,345The Hi, at room temperature
in the first Fe monolayer (ML) at the interface was strongly reduced to 22.0 T(110) and 20.9
T(100), whereas the 2nd and 3rdML revealed a slightly increased Hin of 33.7 T as compared
with the Fe bulk value of 33,4 T. The temperature dependence of the H~n at the interface
showed a T -3a spin wave law. The spin wave parameters are enlarged-with respect to the bulk
value, indicating a reduced exchange interaction, The temperature dependenceof the local
magnetization for the interface atom layers was found to be much smaller than that of the
magneto-resistance (MR) effect.
The H~n at the interface with noble metal differs only slighdy from the Hi, (0) in the center
of the films. There is a positive correlation between H~o and IS at Fe/Cu, Fe/Ag, and Fe/Au
as shown in Fig. 42. 346
The FeZr multilayer films 346,347 annealed in ultra-high vacuum were not completely
amorphous: only a maximum thickness of 14 interfacial c~-Fe is transferred into the
amorphous phase between 620 and 660 K. The thin amorphous layer acts as a diffusion barrier
and prohibits further growth of the amorphous interfacial layer. Iron segregation in Zr-Fe
alloys was studied. For the samples with the overall composition Fe0.67Zr0.33, Fe0.sZr05 and
Fe0.33Z0.67, an amorphous phase was formed. 347 The growth and the crystallization of the
intermetallic compound FeZr 3 for the rich zirconium sample were discussed. 347 A Au/Si
interface, 348 and a Fe-AI thin-film349.350 were characterized by CEMS.
Fe/Fe-N multilayered films prepared by an alternation of Fe sputtering and nitrogen
plasma exposure TM were analysed by CEMS. Fine crystals of s and Fe2N grains were
produced in plasma exposure rather than thermally stable y-Fe4N. The Fe/Fe-N multilayered
fihns showed good soft magnetic properties.
In Y/Fe/Y layered structures the Fe interlayer grew in an amorphous structure up to a
critical thickness of dr =2.3 nm. The average magnetic moment of c~-Fe amounts was
= (1.2 + 0.2)/.t B and the fenomagnetic Curie temperature was T~ = (80-+ 3)K? 52
In situ CEMS in ultrahigh vacuum was employed to study the average Fe-spin orientation
and hyperfine fields in zero external field in uncoated and Tb-coated 57Fe films deposited
either onto a clean Tb(0001) single-crystal surface or onto (bulk like) i~olycrystalline Tb or
Ag films. At 30 K, the spectra of 1.5 nm thick uncoated Fe Films on Tb(0001) indicated
structurally disordered (amorphous) Fe layers, whereas spectra of 3.0-3.5 nm thick Fe films
161
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
W(110)/20§
37 , , , , ,.
1 35
34 ~bulk
,4
3:
3~ I 1 t 1 I
0.05 0.09 0.13
IS (m~/'s)
Fig. 42. The ground state values of magnetic hyperfine field combined with isomer shift for Fe(110) interface
with noble metals (from Ref. 346)
2. Langmuir-Blodgett layers
Mono- and multilayers of ferric stearate were formed on oxidized silicon wafers by the
Langmuir-Blodgett technique. 3s4,355Heating of samples in air up to 523 K ted to a desorption
of the fatty acid chains, while the ferric irons were left on the substrate surface. They formed
a rather homogeneous, closed oxide layer. The iron oxides are most probably in the form of
crystalline and amorphous 7-FeOOH. 329 By a subsequent heating in hydrogen gas or exposure
to nascent hydrogen, a part of the iron oxide layer was reduced to the metallic state (cc-Fe).
The CEM spectra (Fig. 43) 329 show the formation of a mixture of different iron species (Fe 3§
Fe 2§ Fe0). The surface iron ions were found to exhibit a reasonably high recoilless fraction.
CEMS is useful for identifying iron species even if the surface is covered by less than one
monolayer. Oxidic and metallic Fe/Ni multilayers were prepared from Langmuir-Blodgett
films. The results observed by CEMS were different from those obtained from disordered bulk
alloys. 356
162
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
T = 530~
t•
//V~
Fe 3§
,-~ Fe 2+
~
ul
, ,/
.4-a
8 T = SO0~
! 1 I I !
-I0 -5 0 5 I0
Velocity (ram/s)
Fig. 43. CEM spectra of thermodesorbed samples with I1 ML after heating in I-Iz gas for 15 rain at 803 K and
773 K (from Ref. 329)
production of Fe 3+ saturated for longer times of irradiation at a value of about 4%, equivalent
to about one monolayer of iron compound if the Debye-Waller factor would be half of the
value of metallic iron. The high spin Fe 2§ was dominating for long times of irradiation.
To investigate lubricant substrate interfaces, stoichiometric MoS 2 single crystals coated
with 57Fe films were investigated by CEMS. 358 Four different compounds were found to form
at the MoS 2/Fe interface, depending on annealing temperature, sulfur content in the MoS 2
and defect density. The undamaged MoS 2 basal plane was inert toward reaction with iron,
whereas the presence of excess sulfur and defects promoted the reaction. FeMozS 6 was found
to be preferentially oriented with respect to the MoS z habit plane. Excess sulfur within
molybdenite migrated to iron overlayers to form overlayers of troilite or pyrohotite depending
on the annealing temperature. The interfaces of TaS 2 and Fe layers on quartz, prepared by
DC and RF sputterings, also were characterized by CEMS. 359
The surface of iron fluoride hydrate was observed by CEMS at low glancing angles. 36~
The reaction of ct- and q(-Fe203 with flammable gas, TM the reaction between hydrogen fluoride
and iron oxide surface films in the presence and absence of oxygen and water vapor, 3~2 and
the oxidation of siderate 363 have been investigated by CEMS.
Thin layers of-~TFe (2.5 nm, l0 nm and 70 nm thickness), vacuum evaporated onto A1 and
Si plates, have been investigated by CEMS, UHV-ICEMS and DSCEMS. 3~3B The phase
analysis of the layers indicated the presence of metallic iron and one or two iron compounds,
formed with the residual gas during evaporation as shown in Fig. 44. These products were
rather stable iron nitrides, which were distributed through out the whole layer.
163
K. NOMURAet al.: APPLICATIONSOF CONVERSIONELECTRON
15(]
130 ~!~ . 2.5rim
I I' I I
o ~ 11 !I
x 3z /l ii'if
-4~
= 29 t k :; ":-~" , ~,7
320 I~
,I!
i'~
I!,
!]
7Onto
/il ~ ~ ~11 /~
5 .i !./,,vt.,i..ii!:]\
-10 -5 0 5 1'0
Velocity (ram/s)
Fig. 44. Integral CEM spectra of 57Fe layers of 2.5 nm, 10 nm and 70 nm evaporated onto oxidized Si, A1 and
AI, respectively(from Ref. 61)
164
K, NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
1. Fe ion implantation
a) In semiconductors and metals
57Fe implanted into semiconductor solids36s and Single crystals of graphite366 have been
studied by CEMS. Hyperfine interactions of 57Fe implanted into 3d, 4d and 5d metallic hosts
were comparable with fast quenched dilute alloys.367 Fig. 45 presents isomer shift data for
iron implanted into various matrices." The concentration of iron implanted was about one to
three atomic percent, but IS values for the implanted 57Fe were different from those for the
dilute alloy obtained by thermal equilibrium because of a high degree of atomic disorder in
matrix.
In Si and Ge implanted with 57Fe at the energy of 70 keV and the doses from 5 9 1014 to
1016 c m -2, the QS values increased with the lowering of iron dose) 66 In 3 at% Fe implanted
in Si and Ge, a rather small temperature dependence of the electric field gradient was observed
and interpreted in terms of the T -3n relationship.3s9
Factors influencing the final landing site of implanted ions in semiconductorsy~ and the
defect configuration in semiconductors and metals on high dose implantationTM were reviewed
by Langouche. At high doses ( > 10 ~6 atoms, cm-2) of 57Fe implanted into Si(lI) single crystals,
the measured hyperfine interaction values were the same as those in the bulk amorphous
Fe~Si~ samples. At low dose, the IS value was the same as that of the stoichiometric
crystalline phases but the QS value was different,m
Evidence for fast diffusion of 57Fe implanted in copper was shown by DSCEMS. 373 The
copper-iron alloys produced by 57Fe implantation374at doses between 1 9 10 ~s and 5 9 10 ~6 ions
9cm-2 and the aging behaviour of the implanted alloys375 were characterized by CEMS.
A significantly different spectrum observed for the highest dose was associated both with the
effect of sputtering and with the presence of widely spread damaged regionsP74
-0. ~ sr (0)1z
c .ATi TboLuxH
"~ Ac~- ~ ~d
~C Mg Zn~Ge ~ T ~Ir~
O. 5 . Se Ag~,/wTe ' ~ A u
11 o
I I I 1 I I I I I I I
0 20 40 60 80 100
Atomic Number
Fig. 45. Systematics of the isomer shifts for the one to three atomic percent iron alloys obtained by implantation
of 57Fe ions (50-100 keV) in various matrices - black points. The open points are for the corresponding
alloys obtainedby diffusionor alloyingat thermal equilibrium(from Ref. 11)
165
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
Valve
I
Ta:
i
,I
:Ion Beam
To D r i v e ~
v~ :ton
~6
v.
Fig. 46. Cross section of inslrument for in situ CEMS of isotope separator implantedsamples. Viewed from above
(from Ref. 377)
CEMS apparatus for in situ studies of ion beam-modifed metals has been developed as
shown in Fig. 46. 376,377An in-situ CEM spectrometer 377was used to study the defect association
and clustering of 57Fe implanted in AI and Cu. The substitional monomer fractions are shown
in Fig. 47 and Fig. 48. For 57Fe implanted into Cu at 120 K, the substitutional fraction ~ )
was less than 0.5 of the value expected for a random distribution and it fell to zero after
annealing at 600 K, where more extensive Fe clustering occurred. For 57Fe implanted into A1
at 120 K, f~ was somewhat smaller than expected for a random distribution of impurity but
much larger than after implantation at room temperature. 377 An apparent inconsistency was
observed between ion implantation experiments by recoil implantation of Coulomb excited
atoms and by conventional ion implantation. 378
57Fe implantation and post A1 implantation in aluminium foil were performed at the low
energy of 27 keV and the CEMS showed the formation of intermetallic compounds FeA16 and
F%A1s during the ion bombardmentY 9 The aging behaviottr of 57Fe ions implanted A1 with a
38 kV isotope separator was examined by CEMS at 77 K. The spectrum changed at
temperatures below 373 K, suggesting supersaturation of the lattice vacancies? ~0
Ni-Ti 50 at% alloy was amorphized under 57Fe ion implantation at 300 K. The short-range
order, structural relaxation, crystallization and diffusion of S7Fe were studied after annealing
(300-900 K). Amorphous Fe-Ti-C phase was produced by Fe ion implantation and its role
TM
in tribological behaviour was investigated28z The Fe implanted gadolinium was also studied
by CEMSY 3 High dose implantation of Fe into metals and semiconductors have been
performed with energies up to 1 MeV at the UNILAC injector) ~4 Unusually high
concentrations of 70 at% Fe for Si with doses of 10 ~s Fe ions. cm -2, and 20 at% Fe for Cu
with 10 t7 Fe ions- cm -z were obtained.
166
K. NO/vlURA et al.: APPLICATIONS OF CONVERSION EI..ECq'RON
,,\o \
o.~- _
-"
+ 3_ \ o
• \~ o \ \
\ +
0 i t ",,\ i \
0.1 1 10
Average conc. (96)
Fig. 47. Substitutional monomer fractions ~ ) of Fe in implanted and quenched 57FeCu samples. Drawn line:
expectation for random (binomial) impurity distribution with 12 neighbours; broken lines for 52 and 100
neighbours (from Ref. 377)
XSawicki's (implanted)
5~Fe A1 l d e Waard & Zhang
(implanted)
t*
q-~
1.(
~ (quenched)i
0.5
_x X~x o~
x 12~
I 1 • I \
0.1 1 10
Average conc. (%)
Fig. 48. Substitutional monomer fractions (/s) of Fe in implanled and quenched 57FeAI samples. Drawn line:
expectation for random (binomial) impurity dislribution (12 neighbours) (from Ref. 377)
167
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
Nickel foils were implanted 385 with 57Fe+ in the range 0.1 to 2.5 9 10 ~7 ions. cm-L At low
fluence a Ni(Fe)' solid solution was formed. When the fluence was increased FeNi 3 was first
produced, then FeNi together with a small amount of Fel_~Ni~ with x = 0.3~).4 even if the
predicted value was lower than 0.55. Although ion implantation and ion beam mixing can
lead to the formation of Invar alloys~ it is difficult to obtain only one phase with these
techniques.
168
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
Ion f l u e n c e Ion f l u e n c e
( X I 0 ~ i o n s . c t a -2) ( X 1 U s Lons.cm -~)
.0 z 4 6 8 lo o z 4 6 s to
~ ' ' , j.<~4 r , , , , ,~
20 L_ ,. 2+ ~ *A
oi-,/" , , ,I I- '~' ,
40[ l , ~ i ' '1 0t I I i I,/
.--~ ..... o ~001~ J i I I iA
0L ~ r p| N40
~'10/+-.7." , l I I1 4
,0b ------+ ,
Ok I I I ,I
40, , i I I 4~ 0!
40 I I I ~ q
doublet was attributed to the Fe(Fex ~A1)203 spinel detected) 94 At 1473 K Fe203 precipitates
were preferentially identified in the polycrystal whereas only the spinel phase was observed
in the single crystal. At 1673 K the remaining iron might be incorporated into the alumina
lattice in the (F%_xAI.+)aO3 solid solution or in the form of small particles of diamond cubic
F%O 3 containing aluminium? 94
A ZrO 2 fihn was implanted at room temperature 3s7 with 100 keV 57Fe+ to a fluence of 8 9
9 10 ~6 ions. cm -2. The oxidation of iron was very fast and completed around 673 K for the
ZrO 2 film. The powder samples of 57FezO3 and ~6FezO3 were implanted with 56Fe and STFe ions,
respectively, 39s to study local states of implanted and displaced iron ions in o~-FezO3.3% The
implanted and displaced iron atoms appeared in three different states: (1) regular subsitutional
positions of Fe203, (2) as magnetite Fe304-type structures and (3) paramagnetic FeOl_x state.
In 5VFe implanted samples some enhancement of the FeOt~ fraction was found in comparison
with the SSFe implanted haematite. 39-~ Silver arsenic sulfide (AgAsS2) glass 397 and lithium
fluoride 3~ implanted with 57Fe ions were also characterized by CEMS.
169
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
For 4 . 1 0 ~7 N +- cm -z
For 6 . 1 0 L7 N § cm -2
170
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
"~ d ~d i
d dd'd dd i
d gd 1
d dd i
d ~d i ,
d dd i ~
o
~,~
O O
~,q 4.a z d
d dd d ~d ~ dd d dd d ~d d d~ d dd
~ I- *
r . . . . . . . , 9 9 o
r.. dg d dd g gd
I
J ~ ~ ~ ~ ~ ~.~ ~.~
~ ~
0 ~ 0 0 O0 0 O~ 0 0 ~ 0 O0 0 0 ~ 0 O~ 0
0 i~ ''~
~ ~ o ~ i ~o ~ ~o . . . . . .
~ ~.~ ~. ~ .. ~ ~. ~ ~. ~ ~. ~
O~ 0 0 ~ 0 O~ 0 O~ 0 0 ~ 0 0 0
0
o
171
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
For N ion implanted in anstenitic 18/9-stainless steel: 12CEMS analysis allowed resolution
of five iron environments having a different quantity of nearest and next nearest interstitial N
atoms. The relative line intensities of the subspectra agreed well with the statistical model of
a binomial distribution based on a random arrangement of nitrogen interstitials on octahedral
sites. 41~AISI 304L stainless steel samples were implanted at room temperature with 100 keV
N or C ions with a 4.1017 ions. cm -2 fluence, and were annealed at a temperature of 633 K
for 4 and 100 hours: 13Pure Fe and AISI 304 SS were implanted with N* ion to doses as high
as 1 9 1019 ions- cm -2 while the target was held at elevated temperatures, 373 K and 873 K.
Thick layers, containing y-Fe2N, were produced by holding the Fe target near 673 K while
thick layers containing either e-(Fe, Cr, Ni)2+AN, y-phase high N solid solution, or mixed
o~-phase/y-CrN was produced in 304 stainless steel, depending on the dose and the hold
temperature. The highest dose resulted in the e-(Fe, Cr, Ni)xN phase at 673 K, but in the
y-CrN phase at 773 K and 873 K. Because N was preferentially associating with Cr rather
than Fe, implantation of 304 SS at higher temperatures and doses of 1 9 1019 ions 9 cm -2 caused
decomposition of the austenite into a mixed ferrite/y-CrN microstrueture.414
(Fe, Cr)2N and (Fe, COx phases formed after implantation were fairly stable after
100 hours of annealing. The partial dissolution of these phases led to the formation of
magnetic components attributed to e((N) or (C)-martensites. The thermal stability of nitride
phases was greatly increased by alloying elements such as Cr and A1 as compared to pure
a-Fe implanted with N ion. 4a5 The thermal stability of nitrite phases upon 1 h annealing was
greatly increased as a result of co-implanting either Cr or A1 with N ion as compared to pure
ct-Fe implanted only with N ion. The increased trapping of N atom is related to the higher
formation energy of Cr- or Al-containing nitrides. The enhanced stability of nitrides, especially
of the y-phase in the FeCr and FeA1 model systems, resulted from the higher trapping
efficiency of N in such materials. 4a6 Microstructure and tribology of carbon, nitrogen, and
oxygen implanted ferrous materials417 also were studied by CEMS.
b) B ion implantation
The boron and carbon ion implanted irons were studied by CEMS. 4tg A ball beating steel
was implanted at room temperature with UB ions of 20, 35 and 50 keV energies a: 5 9 1016 to
2 9 1017 ions 9cm -z fluences. 4~9 The 11B (a,~x') reaction at 6.04 MeV was used to determine the
boron distribution profiles. The high fluence led to amorphization of the surface. Fe2B, Fe3B
and Fel_~13x phases were distinguished in boron implanted ball bearing. 419 A thin amorphous
layer was formed in the topmost region of all three different types of steel, armco iron,
X90CrMoV18, and austenitic X10CrNiTi189 when boron ions were implanted at room
temperature using 100 keV beam energy in a dose range of 2 to 1 0 . 1 0 a7 ions 9cm z. An
additional doublet was accounted for as boron atoms on interstitial sites in the direct
neighbourhood of the probe Fe atoms. 4z0
c) C ion implantation
Steel (210Cr46) was implanted in two steps with 5. l017 cm -z carbon ions at 50 keV and
with 2.1017 cm -z carbon ions at 20 keV. The CEM spectrum of the untreated steel showed
about 82% martensitic (sextets 1, 2 and 4) and 18% austenitic fractions (doublet and singlet)
as shown in Table 13721 Sextet 3 is due to the introduction of chromium into the iron lattice
which leads to a decrease of the hyperdine field by about 2.2 T. After implantation, the
martensitic fractions strongly decreased, and two subspectra (sextets 5 and 6) appeared in
addition to the crystalline phase of FezC.
To investigate new effects such as the "long range effect", which is defect formation at
depths exceeding the ion range in materials under high dose implantation (1016 to
5 . 10 ~7 cm-Z), the multiply charged ions Al% Ti +" and C +~ were implanted into a-iron. 42z In
the case of the implantation dose, 2 . 1 0 : C ions 9cm -2, it resulted in e-carbide formation
172
K. NOMURA et al.: A P P L I C A T I O N S OF CONVERSION ELECTRON
o
.c/
2.
o
r
o ~
E
o
o I
L ~ O I ~0 ~ ~ t~
0 0 0,1 r 0
O
I I
o I
N I
O
~d
E
o ..
0
~176
O ~
o
~ N . . . .
N 0 0 0 0 O0
1 1 1 1 I
~ ,-4
~ .~
~4
0 0 0 0 0 0 ~ 0
173
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
1.091
XMS
100- I I-flAI-
G 1
1.26 ~
9,-,,I
r/l
~ ~.00
2 .07
~-~ - b ~~ XMS
, ,.--,I
.4..a
I I 1
-4 0 4
Velocity (mm/s)
Fig. 50. XMS and CEMS data and computer fits from (a) unimplanted 400 ~ steel and (b) N-implanted
440 ~ steel (from Ref. 410)
(Fe2C), which then partially transforms into cementite (F%C) due to substrate heating caused
by irradiation. The implantation of C ions did not show the decreased wear even in the case
of 8. 10 ~7 cm -2 doses, though microhardness increased.
d) P ion implantation
Phosphorus ion implanted iron has been studied. 4~3,424,425The mean projected range for
phosphorus in iron was 22_+ 14, 39 +22, and 7 2 + 38 nm for 50~ 100 and 200 keV,
respectively. The samples, P2 (50 keV), P4 (100 keV) and P6 (200 keV), implanted with
5. 1017 cm 2 phosphorus ions showed fairly uniform behaviour. Paramagnetic Fe2P-like
structures could be detected in all three samples. The lines of the two quadrupole doublets
were very broad (0.66 ram/s). They could be explained only by amorphous fractions with
174
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
, 9 , a:-Fe
, ,,'!..': :" : }FezP
) FezP
>. 104
i0~
IOC
i0~
~ i0~
..~ IOC
10C
104
102
100
104
i0~
lOG
Velocity (ram/s)
Fig. 51. CEM spectra of sample P4 as implanted (100 keV, 5 - 10t7 pcm-2) and annealed for 1 h at different
temperalures (from Ref. 425)
175
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
5 X 10 ! Z 50 keV Ai --~5'Fe
~ 6600eV
0ov
v
,,-4
4..1
i-..4
ID
,,-4
4~
r
~l ~ 12750e~ ~ ~
,--.4
~,i . ll0500eV
i0 30
H,.(T)
-8 -4 0 4 8
Velocity (ram/s)
Fig. 52. DCEM spectra and calculated hyperfine field distribution of the 57Fe foil (sample 5a) at various selected
electron energies (every resolution ~ E / E - 3%), plotted from top to bottom in the order of increasing
probing depths (from Ref. 429)
f) Ti ion implantation
The AIS1 M2 high steel implanted with 110 keV Ti ions at 293 K and with fluences
varying between 5 9 1016 and 4.1017 Ti + 9 cm -2 was characterized by CEMS. The profiling was
done using the 48Ti(p,7)ggv resonant nuclear reaction at 1362,keV and the sputtering yield
measurements of ironY~
Ti clusters and small dispersion carbides were formed in the surface of a - F e after Ti
implantation, which increased microhardness and decreased the wear and friction coefficient
by a factor of 2.5. 422 Increasing the irradiation dose to 5. 1017 Ti ions. crn4 results in the
formation of titanium carbide (TIC).
g) Ni ion implantation
Thin films (70 nm) of 57Fe deposited on SiO2 substrates were implanted with 0.5, 2.5, 5
and 10. 10 I~ 64Ni- cm -2 at 80 keV. 432 The RBS technique at 5,7 MeV a-particles was used to
determine the nickel depth in the implanted surface. Saturation was nearly reached for the
highest implanted fluence due to the high sputtering yield. FeNi alloys with different
compositions and structures were formed: Fe(Ni) solid solution, bcc Fe-ricb phase, fcc Ni-rich
zone and fcc FeNi invar alloys231
176
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
h) Si ion implantation
Si ion implanted into iron with different energies (100, 200 and 300 keV) and ion doses
(2. i017 to 1 9 1018 cm -1) was investigated by CEMS. 433 A singlet line was observed in CEM
spectra of iron implanted with 100 keV, 5- 10 ~ Si- cm -2 and 200 keV, t - 10 TM Si- cm -2. As
the single had IS = 0.22 m m . s-~ and no QS, FeSi or FeSi2 could be excluded, and the singlet
referred to isolated iron. The line became narrower by anne~iling at 573 K, and 673 K, and
was due to precipitation processes. The components with 32 T and 19.8 T, which were formed
at 773 K and 873 K, were attributed to the short range order of Fe3Si. After annealing at
973 K the peak intensity of Si/Fe compound decreased from 70% to 33% and t~-Fe dominated
in the CEM spectra. The Si diffused thermally and the concentration decreased in the
investigated range, and silicide compounds could not be formed.
177
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
or 493 K (A1Fe) for a dose o f 8 9 10 z~ ions. cm -z. In the A1Fe alloys, the local environments
of the Fe atoms showed different characteristic evolutions for amorphous and quasicrystalline
phases with a combination of several sites, of which the relative proportions varied at each
intermediate mixing stage.
The ion beam mixing in Fe/A1 bilayer structures at low temperature did not induce
amorphous phase formation. 442 Multilayers of overall composition around Fe2oA180 subjected
to Xe bombardment at 7 7 K produced amorphous alloys. The icosahedral structure was
obtained by bombardments at 300 K . The initial multilayered thin film structures had
thickness from 10/2 nm to 10/42 nm of Fe/A1.
The ion beam mixing was accomplished by means of Ar+ and Xe § bombardments at a
fluence of..5 9 10 '~ cm -2, with ion energies of 100 and 300 keV, respectively. The analyses
showed the presence of amorphous equilibrium phases. The electrochemical corrosion
behaviout44~ of ion beam-mixed Fe/A1 and Fe/C were studied by CEMS.
Ion-beam mixing of the A1-Fe-Mn system with 100 keV A r and their subsequent
transformation upon thermal annealing were studied by CEMS and X-ray diffraction. 444,445The
mixed states were comprised both binary (Fe-AI, Fe-Mn, Mn-A1) and ternary (A1-Fe-Mn)
metastable phases. XRD patterns were obtained for the as deposited and ion-beam mixed
samples annealed at 673 K for 200 min. The X-ray diffraction patterns for the as-deposited
and annealed sample showed presence of a tertiary A1FeMn phase with ~-Mn structure along
with binary FeA1, Fe2A15, MnA16, [~-FeMn4, and A1Mn phases. 445 The MGssbauer parameters
of Fe-A1 intermetallic compounds are listed in Table 14,446 which are useful for the
comparison with the CEM parameters of ion beam mixed layers.
Table 14. 57Fe M~ssbauer Parameters for Aluminum Rich Iron Alloys~
AI-Fe (0.1954) 0
0.36 0
Ai-Fe(solid 0.43 0
solution) 0.440 0 0.252
0.422 0 0.242
(0.429) 0 0.229
178
K. NOMURA et aL: APPLICATIONS OF CONVERSIONELECTRON
b) Cu/Fe layer
40Ar (E = 225 MeV) and 13zXe (E = 120 MeV) ion radiation of Cu-0.2% SVFe alloys
accelerated the diffusion processes. In the case of amorphous alloys the degree of disorder
increased and the chemical short range order changed due to irradiation. The magnetic
amisotropy was decreased and the volume was increased by defects induced. 447
The internal oxidation of an oxygen-bombarded impurity element (fe) in a crystalline host
(Cu) was studied by C E M S : 48 Annealing of 57Fe-implanted copper at 673 K resulted in the
formation of host coherent precipitates of 7-Fe ( < 4 nm) in the non-oxidized copper and of
a solid solution of ferrous iron in the surface cuprous oxide forming "molecular" units of
Cu20 9 FeO. Ferric ions was not formed on ion bombardment with oxygen and the 7-Fe
precipitates were converted to o~-Fe203 ( < 6 nm) and possibly also CU*Fe§ z- (delafossite).
c) Ni/Fe layer
100 keV Ar + irradiation of Fe/Ni bilayers (with iron on top) was effective in the formation
of an heterogeneous Fe-Ni alloy with a structure partly bcc and partly fcc: 49 The high dose
irradiation of Ni-Fe bilayers (Ni on top) brought up to a migration of iron atoms toward the
surface. 45~ Layered thin samples of 100 nm 56Fe/3 nm 57Fe/43 nm Ni(coating) or 100 nm
S6Fe/3 nm S6Fe/63 nm Ni(coating) were irradiated with 100 keV Ar + or 200 keV Kr 2§ ions, 4s~
at doses up to 6- 1016 ions- cm -2. The resonant 58Ni(p,'y)sgCu reaction at Ep = 1424 keV was
used to obtain depth profiles of Ni concentration. Three distinct Fe-Ni phases were identified
by their hyperfine magnetic fields in the ion beam mixed region after irradiation: a solid
solution of Ni in bcc ot-Fe (33 T), an fcc Fe-Ni alloy (28 T) (possibly either NisFe462 or
Fe0.64Nio.36 invar alloy), 453 and a non-magnetic Fetich fcc Fe (7-Fe) phase.
Nickel was electrodeposited on one side and chromium on the other side of a sheet of
(z-iron enriched with 57Fe (85%). The electrodeposited Ni and Cr contained oxygen and it
could be separated by 500 keV Xe § irradiation. The separated oxygen formed an amorphous
metal-oxide interphase at the interface of iron substrate and electrodeposited Ni o r Cr, 454
Fe65Nis5 as multilayers evaporated in UHV were irradiated with 200 keV Kr ions at doses
in the range 1 9 1015-5 9 1016 ions. cm -2 in order to characterize the mixing process as a
function of the fluence. 455 A partial bcc to fcc phase transformation occurred even at the lowest
irradiation dose and went on when the irradiation dose was increased. A remarkable
enhancement of the fcc lattice parameter, due to interstitial inclusions of Kr atoms, occurred
at 4 9 1016 Kr 2+ - cm -2 dose. The bcc phase almost disappeared in the sample irradiated at
8.5 9 1015 Kr 2§ cm-:, and simultaneously a magnetic Fcc Fe-Ni phase (47 at% Ni content)
and a small amount of a nomagnetic fcc Fe--Ni phase were formed.
d) Pd/Fe layer
Analysis of Pd/Fe bilayers on SiO 2 before and after mixing with 200 keV Kr z§ was
performed using R B s and CEMS by GUPTA et al.456 A 5 nm thick 57Fe layer remained
unmixed at either the Pd/Fe interface or the Fe-substrate interface. This was attributed either
to a y-Fe phase, or to an increased lattice spacing of the ct-Fe itself, possibly due to
incorporation of Kr in the lattice. The broad peaks corresponded to Fea_~Pdx phase with average
composition x = 0.72. A disordered FePd 3 phase was formed predominantly in the mixed
region.
e) Zr/Fe and other multilayers
The amorphization of Fe-Zr multiIayers due to ion-beam mixing and solid state reaction
was studied using the CEMS and CXMS. ha the case of the amorphous Fe-Zr phase, the
diffusion of Fe was importantY 7 The ion beam mixing at Fe/Si,458,459 Fe/Ge, 46~ Fe]~/46I and
Fe/Mo interfaces462 were also studied by CEMS.
179
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
180
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
D1 O. 38 O. 85
D2 1.04 2.48
D3 1.48 2.60
( From Ref.484 )
metal-polymer systems irradiated with heavy ions. 484 Three doublets (D1, D2 and D3) were
observed by irradiation with 16 MeV S 3§ ions on Fe-Teflon as shown in Table 15. The T
components (D1, D2 and D3) were associated with FetE, Fe-F and FeF 2 compounds, (f-
respectively.
H. HgSn CEMS
181
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
VERTES et al. (1982) 494 studied electrodeposited and cast brass containing 1-4 mg fin by
CEMS. Tin phases were formed with copper but not with zinc. The phases identified were ~,
~t, ~ and rl. Their ratio depended on the tin concentration and on the preparation process of
the brass.
The Fe~Sn intermetallic compositions on electro-deposited tin were analysed and it was
found that the fully alloyed layers of FeSn2, FeSn + FeSn2, FeSn, FeSn + Fe3SnC and Fe3SnC
were formed by thermal treatment for 30 min at 573, 673,773, 873 and 973 K, respectively. 49s
0.08
Fig. 53. Change in IS obtained by in situ CEMS for Sn-Bi (5 : 1) oxide and Sn oxide/Pd film (from Ref. 61)
182
K. NOMURA el al.: APPLICATIONS OF CONVERSION ELECTRON
(a) i~Sn(II)
...l.a
o,~1
(b)
o;
r
9. ,,, '.,. s !
4-~ ::~. ; ":~.1 ,
or,,-I
z"". ', I
i I
r i
t ,-1 I
- ,,/: i~ . t I / , W
/
I ..,,. " ." , " . . '.'V.i ~,..\, " -" ," ,"?L ~,~:. ~'-~-. '--.:;-
-5 0 5
Velocity (ram/s)
Fig. 54. HOSnCEMS spectra of (a) tin film treated by H3PO4, (b) Mn phosphate coating lreated in SnCI2 solution,
and (c) Zn phosphate coating treated in SnCI2 solution (from ReL 506)
183
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
as shown in Fig. 54. 505 The MSssbauer parameters of these in c o m p o u n d s are listed in
Table 16. Analysis of there doublets were performed, assuring that the peak ratio of each
doublet was equal.
184
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
VI~RTES et al. 5~ also studied the effect of ion-beam irradiation on the composition and
structure of some Co~Sn eleCtrodeposits. A transformation of dissolved tin and cubic CoSn
to y-C%Sn z was observed. The effect of Xe § irradiation and of subsequent annealing on Fe/Sn
bilayer was studied by 119Sn CEMS. 5~ The Xe § irradiation caused effective intermixing of fin
and iron layers. [~-tin was not detected in the irradiated samples. Despite successive annealings,
the ion beam mixing of the bilayer favoured the formation of Fe3Sn2.5~
Films of Fe (20 rim) and Sn (40 nm) were deposited onto A1 supports and irradiated with
100 keV Xe ions at a dose of 5-1015 ions. cm -~. Scanning electron microscope (SEM)
examination showed that the irregular morphology of deposited Sn was considerably flattened
by irradiation, which also produced sputtering of Sn. The formation of various intermetallic
phases was enhanced by irradiation. Their thermal stability under annealing at temperature up
to 523 K was also investigated.51~
Silicon and tin (12 at% to 60 at% Sn) multilayers with total thickness 200 nm were
deposited at room temperature on beryllium and glass plate substrates under high vacuum
( < 5- 10 -7 mbar). TM The samples were irradiated at room temperature with Xe § ions of
900 keV energy with fluences of 0.1 - 1015 to 2 . 1 0 ~8 ions. cm -2. After irradiation, the
relative population of a substitutional Sn site depended on composition and irradiation
fluence. These films showed semiconductor behaviour with electrical resistivity of Sn
implanted silicon, 512 and ion beam mixing in the Sn-Si system 5x3 were studied by CEMS.
DE WAARD (1992) 514reviewed the formation of isolated molecules of composition SnO x
in silver and SnFx in copper. Ion beam interaction techniques were used for the identification
of these molecules. 5~ Local structure and thermal behaviour of 119Sn ion implanted
tin-aluminium and -nickeP 15 were investigated by CEMS.
The thermal oxidation behaviour of a high-carbon steep 16and an austenitic stainless steel5t7
treated, by tin ion implantation and radiation enhanced tin diffusion, respectively, were
investigated by CEMS. Significant reduction of the oxidation rate constant as well as
pronounced enhancement of the adherence of the oxide scale to the steel substrate were
observed for the treated high carbon steel. 515 However, the austenitic stainless steel treated lost
its natural protection against oxidation. This distinctive behaviour was due to the precipitation
of Ni--Sn intermetallic compounds. 516
Silicon preamorphized using HgSn§ implantation, the amorphous Ge-Sn thin films
deposited by sputtering, and this films of semiconductor SnO x deposited by reactive sputtering
were characterized by 1198n CEMS 518 as shown in Table 16.
The 119Sn implantation at 4 . 10 I6 cm -2 (180 keV) and higher was performed in sapphire
(A1202).519 The CEM spectra indicated that tin species was distributed between the Sn(II) and
Sn(IV) states in the amorphous films. The Sn(II) component (IS = 3.2 mm/s, QS = 2.1 mm/s,
F W H M = 1.3 mm/s) was assigned to a SnA1204 environment rather than SnO. The values of
QS and FWHM for the Sn(IV) component given were comparable to those of SnO 2 or SnA1205
but the IS values were systematically negative and lower than the IS for these compounds.
The lower IS values could be due to (1) a high ionicity of the Sn~3 bonding or (2) a decrease
in the electron density at the Sn nucleus due to a lower pressure expected by the amorphous
A120 ~ matrix on small SnO 2 or SnAlzO3 precipitates. The asymmetry of the Sn(II) and Sn(IV)
doublets is caused either by an orientation effect of the electric field gradient with respect to
the 3, beam, or an anisotropy in the Goldanski-Karyagin effect. If the tin is present in small
precipitates, the symmetry is broken at the surface, ~and this fact introduces the
Goldanski-Karyagin effect. All tin states became Sn(IV) with asymmetry doublet by annealing
up to temperatures of 1173 K.
185
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
186
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
implantation process in the 100 ns range where only very few other techniques are applicable.
However, an intense ion beam and a long measuring time are necessary to accumulate enough
statistics for each time window.
2. Source experiment
A vibration-free conversion electron detector was constructed for M~ssbauer source
experiments with extremely low doping levels ( - 1 ppm) of 57Co. It still yielded more
than a sixfold enhancement in S/N ratio over standard TM methods. The'lightweight
detector ( - 25 g) may be mounted directly on a conventional transducer without limiting
the performance. This allows low temperature source measurements to be made by moving
the detector and fixing the sample/source in a cryostat. 533
IV. SUMMARY
CEMS is an unique analytical technique for investigation of chemical state, structure and
magnetism in surface and subsurface layers on functional substance and solid materials. Many
principle techniques and applications of CEMS have been discussed in this article. The
experimental techniques and detectors for CEMS have been described in particular detail so
that the detectors can easily be designed to suit an intended application of CEMS. CEM
spectra can be also analysed by a conventional method using the large quantity of data
obtained by both TMS and CEMS, and the different chemical states between the surface and
the bulk can be easily distinguished. CEMS techniques have come to be one of the most
indispensable analytical methods for surface and subsurface characterization of solid and
materials. Integral CEMS is now popular. In situ CEMS and DSCEMS, especially LEEMS
and GACEMS, will be expected to apply more to surface analysis of thinner films of new
materials, and to interface analysis of artificial multilayers, with improvementg in the electron
detection system.
The authorsare gratefulto Prof. GRADMANand Dr. H. REUTHERfor their suggestionsconcerningthis review
article.
References
187
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
12. J. J. SPIIKERMAN, CEMS, in: MOssbauerEffect Methodology, I. J. GRUVERMAN (Ed.), Vol. 7, Plenum
Press, New York, 1971, p. 85.
13. G. P. HUFFMAN, Theoretical expressions for analysis of multilayer surface films by electron re-emission
M0ssbaner spectroscopy, in: MOssbauerEffect Methodology, I. J. GRUVERMAN, (Ed.), Vol. 10, Plenum
Press, New York, 1976, p. 209.
14. M. J. TRICKER, CEMS and its recent,development, in: MOssbauer spectroscopy and its Chemical
Applications (Adv. in Chem. Ser. No. 194)i J. G. STEVENS and G. K. SHENOY (Eds), Am. Chem. Soc.,
Washington DC, 1981.
15. Y. UJIHIRA, Analytical applications of conversion electron MOssbauerspectrometry (CEMS), Rev. Anal.
Chem., 8 (1985) 125.
16. G. N. BELOZERSKI, MOssbauerStudies of Surface Layers, Elsevier Science Publ., Amsterdam, 1993.
17. F. E. WAGNER, J. Phys. (Paris) Colloq., C6, 37 (1976) 673.
18. R. OSWALD, M. OHRING, J. Vac. Sci. Tech., 13 (1976) 40.
19. J. R. GANCEDO, M. GRACIA, J. F. MARCO, CEMS Methodology, Hyperfine Interact., 66 (1991) 83.
20. J. M. THOMAS, M. J. TRICKER, A. P. WINTERBOTrOM, J. Chem. Soc. Farad. Trans., (1975) 1708.
21. D, LIIAEQUIST,T. EKDAHL, U. BAVERSTAM, Nucl. lnstrum. Methods, 155 (1978) 529.
22. J. BAINBRIDGE, Nucl. Instmm. Methods, 128 (1975) 531.
23. M. J. GRAHAM, D. F. MITCHELL, D. A. CHANNING,Oxidation of Metals, 12 (1978) 247.
24. M. J. GRAHAM, D. F. MrrcHELL, D. A. CHANNING,Oxidation of Metals, 12 (1978) 373.
25. C. FELDMAN, Phys. Rev., 117 (1960) 455.
26. D. LILJEQUIST,Nucl. Instrum. Methods, 179 (1981) 617.
27. J. A. SAWlCKI, 1". TYLISZCZAK, Nucl. Inslrum. Methods, 216 (1983) 501.
28. K. MAKARILrNAS,E. MAKARIUNIENE,Liet. Fiz. Rinkinys; 25 (1985) 111.
29. F. SALVAT, R. MAYOL, J. D. MARTINEZ, J. PARELLADA, Nucl. Instrum. Methods in Phys. Res., B6
(1985) 547.
30. J. H. TERRELL, J. J. SPIJKERMAN, Appl. Phys. Lett., 13 (1968) 11.
31. K. R. SWANSON, J. J. SPIJKERMAN, J. Appl. Phys., 41 (1970) 3155.
32. B. KEISCH, Nucl. lnstrum. Methods, 104 (1972) 237.
33. K. NOMURA, Y. UJIHIRA, Bunseki-Kagaku, 34 (1985) T5.
34. D. HANZEL, P. GRIESBACH, W. MEISEL, P. G~TLICH, Hyperfine Interact., 71 (1992) 1441.
35. M. INABA, K. NOMURA, Y.'UJIHIRA, J. de Physique,41 (1980) C1-115.
36. T. TORIYAMA, K. UEOKA, Hyperfine Interact, 29 (1986) 1525.
37. V. KUNCSER, G, F1LOTI,Nucl. Instr. and Meth. in Phys. Res., B82 (1993) 186.
38. V. S. VARTANOV, B. G. ZEMSKOV, Izmer. Tekh., (1987) 51.
39. J. R. GANCEDO, M. GRACIA, Hyperfine Interact., 28 (1986) 1097.
40. L. SBRIZ, M. VILLAGRAN,G. VALCONI,J. Radioanal. Nucl. Chem., 128 (1988) 387.
41. M. VILLAGRAN, L. SBRIZ, G. VALCON1, J. Radioanal. Nucl. Chem., 153 (1991) 375.
42. L. SBRIZ, M. VILLAGRAN,G. VALCONI, J. Radioanal. Nucl. Chem., 133 (1989) 211.
43. G. WEYER, Hyperfine Interact., 58 (1990) 2561.
44. J. G. MULLEN. J. STEVENSON,Nucl. Inslrum. Methods, 153 (1978) 77.
45. J. G. MULLEN, A. DJEDID, C. HOLMES, G. SCHUPP, L. CROW, W. YELON, Nucl. Insmam.Methods in
Phys. Res., B14 (1986) 323.
46. S. BOCQUET, R. J. POLLARD, J. D. CASHION, Hyperfine Interact., 58 (1990) 2503.
47. Y. ISOZUMI, M. KURAKADO,R. KATANO, Nucl. Instrum. Methods, 204 (1983) 571.
48. D. C. COOK, Hyperfine Interact,, 29 (1986) 1463.
D. C. COOK, E. AGYEKUM, Nucl. Instrum. Methods in Phys. Res., B12 (1985) 515.
49. K. NOMURA, M. TASAKA, Y. UJIHIRA, HyperfineInteract., 41 (1988) 681.
50. A. KASTNER, G. LUGERT, G. BAYREUTHER, Hyperfine Interact., 42 (1988) 1145.
51. A. S. KAMZIN, V. P. RUSAKOV, Prib. Tekh. Eksp., (1988) 56.
52. A. S. KAMZIN, L. A. GRIGOR'EV, Prib. Tekh. Eksp., (1990) 77.
53. K. FUKUMURA, A. NAKANISHI, T. KOBAYASHI,R. KATANO, Y. ISOZUMI,Nuch Instrum. Methods
in Phys. Res., 861 (1991) 127.
54. K. FUKUMLrRA, T. KOBAYASHI, A. NAKANISHI,R, KATANO, Y. ISOZUMI Hyperfine Interact., 69
(1991) 755.
55. K. FUKU-MURA,R. KATANO, T. KOBAYASHI,A. NAKANISHI,Y. ISOZUMI,Nucl. Instrum. Methods
in Phys. Res., A.301 (1991) 482.
56. T. FUJI/, N. HOSOITO,R. KATANO, Y. ISOZUMI, Nucl. Instrum. Methods in l:;hys. Res., B76 (1993) 207.
57. Y. ISOZUMI, M. KURAKADO,~R. KATANO, Nucl. Instrum. Methods, 166 (1979) 407.
58. M. INABA, H. NAKAGAWA, Y. UJ1HIRA,Nucl. lnstrum. Methods, 180 (1981) 131.
188
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
59. X. ZHOU, A. H. MORRISH, Nucl. Inslrum. Methods in Phys. Res., B18 (1987) 215.
60. D. BODIN, J. P. EYMERY, Nucl. Inslrum. Methods in Phys. Res., B16 (1986) 424.
61. K. NOMURA, S. S. SHARMA, Y. UJIHJRA, Nucl. Inslrum. Methods in Phys. Res., B76 (1993) 357.
62. H. SATO, M. MITSUHASHI, Hyperfme Interact., 58 (1990) 2535.
63. J. A. SAWICKI, T. TYLISZCZAK, O. GZOWSKI, Nucl. Instrum. Methods, 190 (1981) 433.
64. J. A. SAWICKI, Nucl. Instrum. Methods in Phys. Res., B16 (1986) 483,
65. R. ATKINSON, T. E. CRANSHAW, Nucl. Inslrum. Methods., 204 (1983) 577.
66. A. A. MANALIO, K. BURIN, G. M. ROTHBERG, Sci. Instrum., 52 (1981) 1490.
67. ZS. KAJCSOS, CH. SAUER, A. HOLZWARTH, R. KURZ, W. ZINN, M. A. C. LIGTENBERG, G. VAN
ALLER, Nucl. Inslrum. Methods in Phys. Res., B34 (1988) 383.
68. CH. SAUER, A. HOLZWARTH, ZS. KAJCSOS, W. ZINN, Nucl. Instrum. Methods in Phys. Res., B34
(1988) 377.
69. ZS. KAJCSOS, CH. SAUER, W. ZINN, R. KURZ, W. MEYER, M. A. C. LIGTENBERG, Hyperfme
Interact., 58 (1990) 2519.
70. ZS. KAJCSOS, CH. SAUER, W. ZINN, M. A. C. LIGTENBERG, Hypeffine Interact., 71 (1992) 1479.
71. ZS. KAJCSOS, CH. SAUER, W. ZINN, Hyperfine Interact., 51 (1989) 1147.
72. ZS. KAJCSOS, CH. SAUER, W. ZINN, R. KURZ, W. MEYER, M. A. 'C. LIGTENBERG, Hyperfine
Interact., 58 (1990) 2519.
73. ZS. KAJCSOS, CI-I. SAUER, W. ZINN, W. MEISEL, H. SPIERING,M. ALFLEN, P. GOTLICH, Hyperfine
Interact., 71 (1992) 1469.
74. ZS. KAJCSOS, W. MEISEL, P. GRIESBACH, P. GQrLICH, M. A. C. LIGTENBERG, V. GRADMANN,
E. LEHRBERGER, M. PRZYBYLSKI, Hyperfine Interact., 71 (1992) 1483.
75. Y. ISOZUMI, D. I. LEE, I. KADAR, Nucl. Instrum. Methods, 20 (1974) 23.
76. P. SCHAAF, U. GONSER, Hypeffine Interact., 57 (1990) 2101.
77. U. GONSER, P. SCHAAF, Fresenius J. Anal. Chem., 341 (1991) 131.
78. P. SCHAAF, A. KRAMER, F. AUBERTIN, U. GONSER, Z. Metallkunde, 82 (1991) 815.
79. D. LILJEQUIST, B. B. RINGSTROM, Nucl. Instrum. Methods, 160 (1979) 131.
80. U. GONSER, P. SCHAAF, F. AUBERT1N, Hyperfine Interact., 66 (1991) 95.
81. P. SCHAAF, A. KRAEMER, L. BLAES, G. WAGNER, F. AUBERTIN, U. GONSER, Nucl. Inslrum.
Methods in Phys. Res., B53 (1991) 184.
82. S. MI-IRKAEV, M. A. ANDSREEVA, V. G. SEMENOV, G. N. BELOZERSKII, O. V. GRISHIN, Nucl.
Instrum. Methods in Phys. Res., B74 (1993) 545.
83. M. MATSUO, H. SATO, T. TOMINAGA, Radiochem. Radioanal. Lett., 48 (1981) 253.
84. H. NAKAGAWA, Y. UJIHIRA, M. INABA, Nucl. Instrum. Methods, 196 (1982) 573.
85. M. TAKAFUCH/, T. KOBAYASHI,Nucl. lnstrum. Methods in Phys. Res., B9 (1985) 223.
86. Y. YONEKURA, T. TORIYAMA, J. ITOH, K. HISATAKE,Hyperfine Interact., 16 (1983) 1005.
87. J. J. BARA, B. F. BOGACZ, Hyperfine Interact., 29 (1986) 1575.
88. J. 1. BARA, B. F. BOGACZ, Nucl. Instrum. Methods in Phys. Res., A238 (1985) 469.
89. J. 1. BARA, B. F. BOGACZ, Hypeffine Interact., 58 (1990) 2497.
90. U. BAVERSTAM, C. BOHM, B. RINGSTROM, T. EKDAHL, Nucl. Instrum. Methods, 108 (1973) 439.
91. TSV. BONCHEV, A. MINKOVA, G. KUSHEV, M. GROZDANOV, Nucl. Instrum. Methods, 147 (1977)
481.
92. T. SHIGEMATSU, H. D. PFANNES, W. KEUNE, American Phys. Soci., 45 (1980) 1206.
93. J. ITOH, T. TORIYAMA, K. SANEYOSHI,K. HISATAKE, Nucl. Instrum. Methods, 205 (1983) 279.
94. D. LILJEQUIST, Hyperfine Interact., 57 (1990) 1963.
95. A. I. CHUMAKOV, G. V. SMIRNOV, Zh. Eksp. Teor. Fiz., 89 (1985) 1810.
96. YU. F. BABIKOVA, O. M. VAKAR, P. L. GRUZIN, YU. V. PETRIKIN, Priklyad. Spektrosk., 11 (1982)
228.
97. E. KANKELEIT,Z. Phys., 164 (1961) 442.
98. K. P. MITROFANOV,V. S. SHPINEL, Soviet Phys., JETP 13 (1964) 233.
99. S. C. PANCHOLI, H. DE WAARD, J. L. W. PETERSEN, A. VAN DER WIIK, J. VAN KLINKEN, Nucl.
Instrum. Methods in Phys. Res., A221 (1984) 577.
100. A. I. CHUMAKOV, G. V. SMIRNOV, Nucl. lnstrum. Methods in Phys. Res., B28 (1987) 307.
101. M. DOMKE, B. KYVELOS, G. KAINDL, Hyperfine Interact., 10 (1981) 1137.
102. Z. M. STADNIK, H. R. BORSJE, A. E. M. SWOLFS, W. H. A. LEENDERS, J. C. FUGGLE, Rev. Sci.
lnstrum., 60(4) (1989) 708.
103. J. KORECKI, U. GRADMANN, Hyperfine Interact., 28 (1986) 931.
104. D. VARGA, I. Ki~d)2~R, A. KOVER, I. CSERNY, G. MORIK, V. BRABEC, O. DRAGOUN, A. KOVALIK,
J. ADAM, Nucl. Inslr. Methods, 192 (1982) 277.
189
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
t05. CH. BRIANCON, B. LEGRAND, R. J. WALEN, TS. VYLOV, A. MINKOVA, A. INOYATOV, Nucl. Instr.,
221 (1984) 547.
106. H. SATO, M. MATSUO, M. TAKEDA, N. MORIKAWA, T. TOMINAGA, Int. J. Appl. Radiat. Isot., 34
(1983) 709.
107. M. MATSUO, H. SATO, T. TOMINAGA, Radiochim. Acta, 35 (1984) 227.
108. I. P. JAIN, Y. K. VIJAY, L. K. MALHOTRA, A. VERMA, R. CHANDRA, Hyperfine Interact., 35 (1987)
1045.
109. I. P. JAIN, Y. K. VIJAY, R. CHANDRA, Vacuum, 41 (1990) 1776.
110. V, YU. RYZHYKH, M. I. BABENKOV, B. V. BOBYKIN, V. S. ZHDANOV, A. K. ZHETBAEV, Nucl.
Instrum. Methods in Phys. Res., B47 (1990) 470.
lll. B. STAHL, G. KLINGELHOFER, H. JAGER, H. KELLER, TH. REITZ, E. KANKELEIT, Hyperfine
Interact., 58 (1990) 2547.
112. G. KLINGELHOFER, U. IMKELLER, E. KANKELEIT, Hyperfine Interact., 54 (1990) 577.
113, H, M. VAN NOORT, A. A. VAN GORKUM, J. Phys. E: Sci. Instrum., 21(1988) 587.
114. H, M. VAN NOORT, F, J. FERGUSON, C. J. G. VERWER, A. A. VAN GORKUM, J. M. E. VAN
LAARHOVEN, C. J. M. DENISSEN, Nucl. Inslrum. Methods in Phys. Res., B34 (1988) 391.
115. P. AURIC, A. BAUDRY, M. BOGE, L ROCCO, L. TRABUT, Hyperfine Interact., 58 (1990) 2491.
116. P. H. SMIT, R. P. VAN STAPELE, Appl. Phys., A28 (1982) 113.
117. A. P, KUPRIN, A. A. NOVAKOVA, Nucl. Instrum. Methods in Phys. Res., B62 (1992) 493.
118. D. LIIAEQUIST, C. BOHM, T. EKDAHL, Nucl, Instrum. Methods, 177 (1980) 495.
119. D. LIIAEQUIST, M. ISMAIL, NucL Instrum. Methods in Phys. Res., A239 (1985) 273.
120, D. LILJEQUIST, Report IS: US/P-85-20, ESA-86-97049; Order No. N86-28642/4/GAR (1985) 92.
121. M_J. TRICKER, A. G. FREEMAN, A. P. WINTERBOTTOM, J. M. THOMAS, Nucl. Instrura. Methods, 135
(1976) 117.
122. D. LIIAEQLFIST, M. ISMAIL, Phys. Res., B, 31 (1985) 4131.
123. P. TOPALOV, A. PRO1KOVA, Nucl. Instrum. Methods in Phys. Res., Sect. A, A236 (1985) 142.
124. D. L1LFEQUIST, M. ISMAIL, K. SANEYOSHI, K. DEBUSMANN, W. KEUNE, R, A. BRAND,
W. KIAUKA, Phys. Rev., B, 31 (1985) 4137.
125. M. ISMAIL, D. LILJEQUIST, Hyperfine Interact., 29 (1986) 1509.
126, T. S. LEE, B. L TATARCHUK, Hyperfine Interact., 42 (1988) 1149.
127. D. LILJEQUIST, Hyperfine Interact., 57 (1990) 1963.
128. S. BERNSTEIN, E, C. CAMPBELL, Phys. Rev., 132 (1963) 1625.
129. J. C. FROST, B. C. C. COWIE, S. N. CHAPMAN, J. P. MARSHALL, Appl. Phys. Lett., 47 (1985) 581.
130. S. M. IRKAEV, M. A. ANDREEVA, V. G. SEMENOV, G. N. BELOZERSKII, O. V. GRISHIN, Nucl.
Instrum. Methods in Phys. Res., B74 (1993) 554.
131. M. GROZDANOV~ TS. BONCHEV, V. LILKOV, Nucl. Instrum. Methods, 165 (1979) 231.
132. S. STANIEK, T. SHIGEMATSU, W. KEUNE, H. D. PFANNES, J. Magn. Magn. Mater., 35 (1983) 347.
133. T. S. LEE, T. D. PLACEK, J. A. DUMESIC, B. J. TATARCHUK, Nucl. Instrum. Methods in Phys. Res., B18
(1987) 182.
134. J. S. ZABINSKI, B. J. TATARCHUK, Nucl. Inslrum. Methods in Phys. Res., B31 (1988) 576.
135. J. S. ZABINSKI, B. J. TATARCHUK, NucL Instrum. Methods in Phys. Res., B51 (1990) 41.
136. T. S. LEE, B. J. TATARCHUK, Hyperfine Interact., 57 (1990) 1949.
137. G. KLINGELHOFER, E. KANKELEIT, Hyperfine Interact., 53 (1990) 1905.
138. G. KLINGELHOFER, U. IMKELLER, E. KANKELEIT, B. STAHL, Hyperfine Interact., 69 (1992) 819.
139. G. KLINGELHOFER, U. IMKELLER, E. KANKELEIT, B. STAHL, Hyperfine Interact., 71 (1992) 1445.
140. D. LILIEQUIST, H. LANG, Nucl. lnstrura. Methods in Phys. Res., B52 (1990) 83.
141. J. S. ZABINSKI, 13. J. TATARCHUK, Nucl. Instrum. Methods in Phys. Res, B42 (1989) 379.
142.H. SEILER, J. App. Phys., 54 (1983) RI..
143. T. MISAWA, K. HASIMOTO, S. SHIMODAIRA, Corres. Sci., 14 (1974) 131.
144. W. KUNDIG, H. BOMMEL, G. CONSTABARIS, R. H. LINDQUIST, Phys. Rev., 142 (1966) 327.
145. D. SCHROEER, R. C. NINIGER, Jr., Phys. Rev. Lett., 19 (1967) 632.
146. H. TOPSOE, S. MORUP, Int. Conf, MOssbauer Spectroscopy Proc., Vol. 1 (1975) 321.
147. S. HANADA, K. KUMA, Bull. Chem. Soc. Japan, 49 (1976) 3695.
148. P. C. BHAT, M. P. SATHYAVATHIAMMA, N. G. PUTTASWMY, R. M, MALLYA~ Corros. Sci., 23
(1983) 733.
149. T. PEEV, M. K. GEORGIEVA, S. NAGY, A. VFS,RTES, Radiochem. Radioanal. Lett., 33 (1978) 265.
150. I. DEZSI, A. VI~RTES, M. KOMOR, Inorg. Nucl. Chem. Lett., 4 (1968) 649.
151. A. VI~RTES, K. L,/~Z.~, K. KELEMEN, L. BOGNAIN, Radiochem. Radioanal. Lett., 4 (1970) 375.
152. H. LEIDHE[SER, Jr., I. CZ, NAGY, Corros. Sci., 24 (1984) 569.
190
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
191
K. NOMURA et at.: APPLICATIONS OF CONVERSION ELECTRON
199. K. NOMURA, Y. UJIHIRA, R. KOJIMA, Proceedings of Indian National Science Academy, Phys. Sci. Spec.
Vol., Indian National Science Academy, New Delhi, 1982, p. 311.
200. K. NOMIYRA, Y. UJ1HIRA, J. Mater Sci., 17 (1982) 3437.
201. M. CARBUCICCHIO, G. PALOMBARINI, G. SAMBOGNA, Hyperfine Interact., 53-58 (1990) 1775.
202. K. NOMURA, Y. UJIHIRA, J. Analytical and Applied Pyrolysis, 5 (1983) 221.
203. E. MATI1/e;VICH, J. DANON, J. Inorg. Nucl. Chem., 39 (1977) 569.
204. M. J. TRICHER, L. A. ASH, W./ONES, J. Inorg. Nucl. Chem., 41 (1979) 891.
205. D. HANZEL, W. MEISEL, P. GOTLICH, Hyperfme Interact., 57 (1990) 2201.
206. D. HANZEL, W. MEISEL, P. GOTLICH, Solid State Commnn., 76 (1990) 307.
207. K. NOMURA, Y. UJIHIRA, J. Mater. Sci., 18 (1983) 1751.
208. K. YAMAKAWA, F. E. FUJ1TA, Metallurgical Transact. A, 9A (1978) 91.
209. G. PRINCIPI, S. LO RUSSO, C. TOSELLO, Industrial Applications of M0ssbauer Effect, G. J. LONG and
G. J. STEVENS (Eds), Plenum Press, New York, 1986.
210. F. AUBERTIN, S. ABEL, G. WAGNER, P. SCHAAF. U. GONSER, Hyperfme Interact., 47 (1989) 379.
211. A. HANDA, Y. UJIHIRA, J. Mater. Sci., 18 (1983) 1887.
212. M. CARBUCICCHIO, L. BARDANI, J. Mater. Sci., 15 (1980) 711.
213. M. CARBUCICCHIO, L. BARDANI, J. Mater. Sci., 15 (1980) 1483.
214. G. PRINCIPI, A. GUPTA, C. BADINI, Hyperfine Interact., 69 (1991) 479.
215. M. CARBUCICCHIO, R. REVERBERI, G. PALOBARINI, G. SAMBOGNA, Hyperfine Interact., 46 (1989)
473.
216. M. CARBUCICCHIO, E. ZECCHI, J. Mater. Sci., 18 (1983) 3355.
217. M. CARBUCICCHIO, G. SAMBOGNA, Thin Solid Films, 126 (1985) 299.
218. M. CARBUCICCHIO. A. CASAGRANDE, G. PALOMBARINI, Hyperfine Interact., 53-58 (1990) 1769.
219. M. CARBUCICCHIO, G. PALOMBARINI, G. SAMBOGNA, Hyperfine Interact., 69 (1991) 843.
220. M. J. GRAHAM, P. E. BEAUBIEN, G. I. SPROULE, J. Mater. Sci., 15 (1980) 626.
221. M. GHAFARI, M. SAITO, Y. HIROSE, Y. NAKAMURA, Nucl. Instmm. Methods in Phys. Res., B76 (1993)
306.
222. Y. SHIMA, M. TERASAKA, K. NAKAOKA, T. HARA, T. HONMA, Tetsuto Hagane, 72 (1986) 954.
223. A. HANDA, Y. UJIHIRA, I. OKABE, J. Mater. Sci., 16 (198l) 1999.
224. S. SKRZYPEK, E. KOLAWA, J. A. SAWICKI, T. TYLISZCZAK, Mater. Sci. Eng., 66 (1984) 145.
225. S. NASU, H. TANIMOTO, F. E. FUJITA, Hyperfine Interact., 57 1-4 (I990) 2009.
226. C. PIETZSCH, U. TI-IIEME, Isotopenpraxis, 24 (1988) 405.
227. O. N. C. UWAKWEH, J. P. BAUER, J. M. R. GENIN, Metall. Trans. A, 21A (1990) 589.
228. A. CHRISTIANSEN, L. LARSEN, H. R. POULSEN, N. O. R. POULSEN, L. VISTISEN, J. M. KNUDSEN,
Phys. Sci., 29 (1984) 94.
229. M. INABA, K. NOMURA, Y. UJIHIRA, Jap. J. Metal., 52 (1988) 1121.
230. M. INABA, K. NOMURA, Y. UJIHIRA, Jap. J. Metal., 53 (1989) 356.
231. G. KRETrEK, B. HUCK, J. HESSE, Hyperfine Interact., 53-58 (1990) 1935.
232. G. B. FRATUCELLO, E. COLOMBO, O. DONZELL1, F. RONCONI, Hyperfine Interact., 45 (1989) 255.
233. M. GHAFARI, T. OKIYAMA, T. TAKEMOTO, Y. KAWAI, Y. NAKAMURA, Nucl. Instrum. Methods in
Phys. Res., B76 (1993) 37.
234. K. MARIMOTO, A. KIRIHIGASHI, S. NASU, Nucl. Inslrum. Methods in Phys. Res., B76 (1993) 295;
235. B. BOUBEKER, J. P. EYMERY, M. F. DENANOT, E. L. H. SAYOUTY, J. Magnetism and Magnetic
Materials, 133 (1994) 470.
236. D. KHATAMIAN, F. D. MANCHESTER, J. M. DANIELS, J. Less-Common Met., 130 (1987) 511.
237. J. H. SANDERS, B. J. TATARCI-~.JK,Hyperfine Interact., 53-58 (1990) 2083.
238. D. HANZEL, W. MEISEL, P. GUTLICH; Hyperfine Interact., 69 (1991) 807.
239. M. CARBUC1CCHIO, G. PALOMBARINI, Hypeffine Interact., 53-58 (1990) 1783.
240. S. HIROSAWA, H. TANIMOTO, S. NASU, K. TOKUttARA, J. Appl. Phys., 70 (1991) 6369.
241. S. HIROSAWA, H. TANIMOTO, S. NASU, Nucl. Instr. Methods in Phys. Res., B76 (1993) 373.
242. H. M. VAN NOORT, Solid State Commun., 48 (1983) 495.
243. L. DOBRZYNSKI, T. GIEBLrLTOWICZ, M. KOPCEWICZ, M. PIOTROWZKIAND, K. SZYMANSKI,
Phys. Slat. Sol., (a), 101 (1987) 567.
244. K. NOMURA, Y. UJIHIRA, M. SUEKI, N. KAWASHIMA, t-Iyperfine Interact., 54 (1990) 839.
245. K. NOMURA, Y. UJIH/RA, N. KAWASHIMA, Nucl. Instram. Methods in Phys; Res., B76 (1993) 199.
246. K. NOMURA, Y. UJIHIRA, A. YANAGITANI, Hyperfine Interact., 88 (1994) 73.
247. J. F. DINHUT, J. P. EYMERY, J. Magnetism and Magnetic Materials, 93 (1991) 252.
248. O. MASSENET, H. DAVER, Solid State Commun., 25 (1978) 917.
249. O. MASSENET, H. DAVER, Solid State Commun., 21 (1977) 37.
192
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
193
K. NOMURA et al.: APPLICATIONS OF CONVERSION ELECTRON
291. G. BALESTRINO, S. LAGOMARSINO, A. TUCCtARONE, Thin Solid Films, 125 (1985) 263.
292. G. MAREST, A. PEREZ, J. L. PONTHEN1ER,p. GERARAD,J. M. ROBERTSON, J. Appl. Phys., 55 (1984)
2560.
293. G. MAREST, A. PEREZ, P. GERARD, J. M. MACKOWSKI, Phys. Rev. B: C0ndens. Mlatter, 34 (1986)
4831.
294. G. MAREST, A. PEREZ, P. GERARD, J. M. MACKOWSKI,Phys. Rev. B, 34 (1986) 4831.
295. G. MAREST, N. KORN1LIOS,A. PEREZ, F. RAVEL, P. GXERARD, B. GILLES, M. BRUNEL, Hyperfine
Interact., 35 (1987) 943.
296. M. PARDAVI-HORV,g,TH; L. BOTYYidg, I. S. SZOCS, P. E WIEGEN, M. GOMI, J. Mag. Mater., 83
(1990) 23.
297. M. P. HORVATH, L. BoTrY~dq, I. S: SZOCS, P. E. WIEGEN, M, GOMI, Hyperiine Interact., 54 (1990)
639.
298. T. FUJII, M. TAKANO, R. KATANO, y. BANDO, Y. ISOZUMI, T. OKUDA, J. Magn, Magn. Mater., 92
(1990) 261.
299. K. NOMURA, T. HANAI, R. SADAMOTO, Y. UJIHIRA, T. RYUO, M. TANNO, Hyperfine Interact., 84
(1994) 421.
300. A. S. KAMZIN, L. A. GRIGOR'EV, Soy. Tech. Phys. Lett., 16 (1990) 616.
301. A. S. KAMZIN, L. A. GRIGOR'EV, Soy. Phys. Tech. Phys., 35 (1990) 840.
302. A. S. KAMZIN, L. A. GRIGOR'EV, Sov. Tech. Phys. Lett., 16 (1990) 580.
303. G, MAREST, E. B. SAITOVITCH, Hyperfine Interact., 66 (1991) 401.
304. X. Z. ZHOU, A. H. MORRISH, Q. A. PANKHURST, M. RAUDSEPP, J. Phys., Colloq. (Proc. Int. Congr.
Magn., 188) 3, C8 (1988) 2213.
305. J. DENGLER, G. RITYER, G. S. ISCHENKO, B. ROAS, L. SCHULTZ, B. MOLNftR, D. L. NAGY,
I. S. SZOCS, Hypeffine Interact., 55 (1990) 1267.
306. J. DENGLER, G. RIqTER, G. S. ISCHENKO, B. ROAS, L. SCHULTZ, B. MOLN,gdt, D. L. NAGY,
L S. SZCdCS, Physica C (Amsterdam) 162 (1989) 1297.
307. J. DENGLER, G, ERRMANN~ G. R/TrER, O. BAUER, G, S. ISCHENKO, B. ROAS, Hypeffine Interact.,
66 (1991) 373.
308. J. DENGLER, G. ERRMANN, G. Rrlq~R, J. MARKL, G. S. ISCHENKO, B. ROAS, Hyperline Interact.,
70 (1992) 1197.
309. J. DENGLER, G. RI'ITER, G. S. ISCHENKO, B. ROAS, L. SCHULTZ, B. MOLN,g~R, D. L. NAGY,
I. S. SZI)CS, Hyperfine Interact,, 55 (1990) 1267.
310. G. S. ISCHENKO, B. HANSEL, B. ROAS, J. DENGLER, G. RITI~R, S. KLAUMUE~'~ZER,
H. E. HOENIG, H. W. NEUMUELLER, J. SCHUTZMANNet al., Prog. High Temp. Superco ., zl (1990)
361.
311. J. DENGLER, G. ERRMANN, G. RITI'ER, O. BAUER, G. S. ISCHENKO, B. ROAS, Hypeffine Interact.,
66 (1991) 373.
312. A. MAZIEWSKI, E. JACKIEW1CZ, A. KOTLICKI,P. GOEMERT, Solid State Commun., 73 (1990) 487.
313. K. NOMURA, Y. SUGAWARA, H. LI, Y. UJIHIRA, Hyperfine Interact., 69 (1991) 879.
314. M. J. TRICKER, A. P. WINTERBOTI'OM, A. G. FREEMAN, J. Chem. Soc. Dalton (1976) 1289.
315. H. M. VAN NOORT, J. W. D. MARTENS, W. L. PEETERS, Mater. Res. Bull., 20 (1985) 41.
316. F. THIMON, G. MAREST, N. MONCOFFRE, S. JOSHI, S. B. OGALE, Nuct. Instrum. Methods in Phys.
Res., B80/81 (1993) 1241.
317. C, ORTIZ, C. HWANG, A, H. MORR1SH, X. Z. ZHOU, J. Mater. Res, 5 (1990) 824.
318. A. A. NOVAKOVA, A. P. KUPRIN, Nuel. Inst. Methods in Phys: Res., B76 (1993) 213.
319. K. NOMURA, Y. UJIHIRA, Analyt. Sci., 3 (t987) 125.
320. K. NOMURA, Y. UJIHIRA, Analyt. Chem., 60 (1988) 2564.
321. K. NOMURA, Y. UJIHIRA, K. ITOH, K. HONDA, Thin Solid Film, 128, Nos 3, 4 (1985) 225.
322. K. NOMURA, Y. UJIHIRA, Hyperfine Interact., 29 (1986) 1471.
323. G. VON EYNATTEN, E. FUKADA, K. DRANSFELD, Hyperfine interact., 42 (1988) 1095.
324. J. H. SANDERS, B. J. TATARCHUK, Thin Solid Films, 192 (1990) 79.
325. U. GRADMANN, J. Magn. Magn. Mater., 100 (1991) 481.
326. M. PRZYBYLSKI, J. KORECKI, U. GRADMANN, Appl. Phys., A52 (1991) 33.
327. J. MATHON, Rep. Progr. Phys., 51 (1988) 1.
328, A. J. FREEMAN, C. L. FU, J. Appl. Phys., 61 (1987) 3356.
329. W. MEISEL, P. GUTLICH; Surface and Interface Analysis, 19 (192) 450.
330. J. KORECKI, U. GRADMANN, Phys. Rev. Lett., 55 (1985) 2491.
331. G. T. RADO, Bull. Am. Phys. Sot., 2 (1957) 127.
332, J. C. WALKER, R. DROSTE, G. STERN, J. TYSON, J. Appl. Phys., 55 (1984) 2500.
194
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
195
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
196
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
419. N. MILLARD, G. MAREST, N. MONCOFFRE, J. TOUSSET, Surface and Coatings Technology, 51 (1992)
446.
420. A. KRAMER, F. AUBERTIN, U. GONSER, Hyperfine Interactions, 84 (1994) 289.
421. H. REUTHER, E. RICHTER, I. S. SZ!)CS, Phys. Stat. Sol. A, 118 (1990) 409.
422. A. D. POGREBNJAK, O. G. BAKHAREV, V. A. MARTYNENKO, V. A. RUDENKO, R. BRUSA,
A. ZECCA, R. OECHSNER, H. RYSSEL, I. A. TIKttOMIROV, A. I. RYABCHIKOV, Nucl. Instrum.
Methods in Phys. Res., B94 (1994) 8t.
423, H. REUTHER, Nucl. Inslrum. Methods in Phys. Res., B30 (1988) 61.
424. H. REUTHER, Phys. Star. Sol. A, 93 (1986) 201.
425. H. REUTHER, Isotopenpraxis, 24 (1988) 419.
426. H. REUTHER, E. RICHTER, Phys. Res., 13 (1990) 460.
427. H. REUTHER, Nucl. Instrum. Methods in Phys. Res., B53 (1991) 167.
428. H. REUTHER, Hyperfine Interact., 56 (1990) 1637.
429. H. REUTHER, I. NIKOLOV, S. KRUL1ER, R. A. BRAND, W. KEUNE, Nucl. Instrum. Methods in Phys.
Res., B80/81 (1993) 348.
430. H. LADSTATTER, B. STAHL, O. GEISS, R. GILLERT, M. HARTICK, G. KLINGELHOFER,
P. SCHWALBACH, KANKELEIT, Nucl. Inst. Methods in Phys. Res,, B76 (1993) 29.
431. M. A. EL KHAKANI, H. JAFFREZIC, G. MAREST, N. MONCOFFRE, J. TOUSSET, Mater. Sci. Eng.,
All5 (1989) 37.
432. G. MAREST, M. A. EL KHAKANI, Nucl. Insla-urn.Methods in Phys. Res., B59/60 (1991) 833.
433. H. REUTHER, Surface and Interface Analysis, 22 (1994) 547.
434. G. PRINCIPI, Hyperfine Interact., 66 (1991) 149.
435. J. E. E. BAGLIN, Nucl. Instmm. Methods in Phys. Res., B65 (1992) 119.
436. A. FNIDIKI, J. P. EYMERY, Scr. Metall., 19 (1985) 847.
437. C. JAOUEN, J. P. EYMERY, E. L. MATH, J. DELAFOND, Mater. Sei. Eng., 69 (1985) 483.
438. F. G. DOYLE, F. G. YOST, S. T. PICRAUX, D. M. FOLLSTAEDT, L. E. POPE, J. A. KNAPP, Nucl. Instr.
Methods in Phys. Res,, B718 (1985) 166.
439. V. P. GODBOLE, S. M. CHAUDHARI, S. V. GHAISAS,S. M. KANETKAR, S. B. OGALE, V. G. BHIDE,
Phys. Rev., B31 (1985) 5703.
440. W. W. HU, C. R. CLAYTON, H. HERMAN, J. K. HIRVONEN, Sci. Metall., 12 (1978) 697.
441. J. C. PLENET, A. PEREZ, J. RIVORY, O. LABORDE, Nucl. Inslrum. Methods in Phys. Res., B80/81 (1993)
379.
442. J. L. ALEXANDRE, M. A. Z. VASCONCELLOS,R. HUBLER, S. R. TEIXEIRA,I. J. R. BAUMVOL, Nucl.
Instrum. Methods in Phys. Res., B80181 (1993) 436.
443. S. M. KANETKAR, Y. S. DORIK, S. M. CHAUDHARI, S. V. GHAISAS, S. B. OGALE, V. G. BHIDE,
Thin Solid Films, 136 (1986) 45.
444. D, M. PHASE, J. PATANKAR, V. N. KULKARNI, 8. B. OGALE, Radiat. Eft., 106 (1988) 297.
445. S. N. YEDAVE, S. M. CHAUDHARI, S. M, KANETKAR, S. B. OGALE, S. V. GHAISAS, J. Appl. Phys.,
67 (1990) 710.
446. T. BIRCHALL, D. HODGSON, Industrial Applications of the M0ssbauer Effect, G. J. LONG a n d
J. G. STEVENS (Eds), Plenum Publishing Corporation, New York, 1986, p. 189.
447. E. KUZMANN, I. N. SPIROV, Materials Science Forum, 97-99 (1992) 665.
448. W. H. GRIES, B. D. SAWICKA, J. A. SAWICKI,Nucl. Inslrum. Methods in Phys. Res., B18 (1987) 291.
449. L. M. GRATI'ON, A. GUPTA, W. KELrNE, S. LO RUSSO, J. PARELLADA, G. PRINCIPI, C. TOSELLO,
Mater. Sci. Eng., Al15 (1989) 161.
450. M. A. EL KHAKANI, G. MAREST, N. MONCOFFRE, J. TOUSSET, Nucl. Instrum. Methods in Phys. Res.,
in press.
451.C. TOSELLO, L. M. GRATI'ON, W. KEUNE, R. A. BRAND, S. LO RUSSO, J. PARELLADA,
J. M. FERNANDEZ, G. MAREST, M. A. E. KHAKANI,G. PRINCIPI, A. GUPTA, Nucl. Instrum. Methods
in Phys. Res., B59/60 (1991) 545.
452. A. D. MARWICK, R, C. PILLER, T. E. CRANSHAW, J. Phys. F: Met. Phys., 17 (1987) 37.
453. H. FRANCO, H. R. RECHENBERG, J. Phys. F: Met. Phys., 15 (1985) 719.
454. A. VI~RTES, E. KUZMANN, G. VIS-RTES,Z. S. NAGY, E. KOTAY, G./VlF.ZF,y, Hyperfine Interact., 42
(1988) 1013.
455. C. TOSELLO, F. FERRARI, R. BRAND, W. KEUNE, G. MAREST, M. A. EL KHAKANI,
J. PARELLADA, G. PRINCIPI, S. LO RUSSO, V. RIGATO, S. ENZO, Nucl. Instrum. Methods in Phys.
Res., B80/81 (1993) 417.
456. A. GUPTA, G. PRINCIPI, G. BATrAGLIN, S. LO RUSSO, Q. ZHANG, Hyperfine Interact,, 53 (1990)
1587.
197
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
198
K. NOMURA et al.: APPLICATIONS OF CONVERSIONELECTRON
199