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(Metal-Oxide-Semiconductor)
Hyp:
- concentrazione cariche e delle particelle, uniforme nel piano [yz]
Area di gate = A G
Q G +Q sc =0
V G =V ox +V s
Si formano due strati di carica (negativo nel Gate) e positivo all’interfaccia ossido-scd.
ρ ( x=
) q[ p ( x) − n( x) − N A ] ≅ qp
1 – S. Martinoia AA2017-18
0 ≤ V G ≤ V Th Svuotamento (Depletion)
2 – S. Martinoia AA2017-18
ρ ( x)= q[ p( x) − n( x) − N A ] nel bulk del semiconduttore
ρ ( x) = −qN A
V=
G Vox + Vs
1)
QG −Qsc qN A xd
∫ E ⋅ ds = ε ox
→ Eox ⋅ AG =
ε ox
→ Eox =
ε ox
X ox = spessore ossido
xox
qN a x d xox
=
Vox ∫E
0
ox ⋅ dx Vox =
ε ox
3 – S. Martinoia AA2017-18
2)
0 ≤ x ≤ xd
QG −qN A ( xd − x) ⋅ AG qN A ( xd − x)
∫ E ⋅ ds= εs
⇒ − Es ( x) ⋅ A=
G
εs
⇒ E=
s
εs
xd xd xd
qN A qN A x2 qN A xd 2
=
Vs ∫ E ( x) ⋅=
0
s dx ∫
0
εs
( xd − x) ⋅=
dx
εs
( xd ⋅ x − )=
2 0 2ε s
qN A xd xox qN A xd 2
VG = Vox + Vs = +
ε ox 2ε s
pF 1 pF
εs ≅ 1 ε ox ≅
cm 3 cm
D1 ⋅ n = D2 ⋅ n
D = εE
4 – S. Martinoia AA2017-18
ε 2 ⋅ E1 = ε 1 ⋅ E 2
ε ox ⋅ Eox =ε s ⋅ Es (0+ )
ε ox
⇒ Es (0+ ) = ⋅E
ε s ox
xd
VG = Vox + Vs = Eox ⋅ X ox + Es (0+ ) ⋅
2
qN A x d qN x A
Es (0+ ) = Es (0+ ) ⋅ AG = A d G
εs εs
V=
G ( xd ) Vox ( xd ) + V s ( xd )
Ora
V=
G Vox + Vs
Tensione di soglia
Definizione
Tensione di soglia V s * t.c. n(0+)=N A
5 – S. Martinoia AA2017-18
Eq. Di Boltzmann
qVs*
+
n(0 ) = n p e kT
2kT N qN A ( xd* )
⇒ Vs* = ln A ; Vs* =
q ni 2ε s
2ε sVs*
trovo=
xd* x=
d ,max
qN A
V G > V Th Inversione
ρ ( x)= q[ p( x) − n( x) − N A ]
mentre V G aumenta
ρ ( x) ≅ −qn − qN A
6 – S. Martinoia AA2017-18
Esercizio:
dE ρ ( x) dE ( x) q ( p − n − N A − )
= → = 0 ≤ x ≤ xd
dx ε dx εs
7 – S. Martinoia AA2017-18
qN A −
Es ( xd ) xD
dE ( x) qN A qN qN
dx
=−
εs
→ ∫
Es ( x )
dE =
−
εs ∫ dx → E ( x
x
s d ) − Es ( x ) =− A ( xD − x ) → Es ( x ) = A ( xD − x )
εs εs
V (x )
D D x D x
dV qN A qN
→ ∫ dV = − ∫ E ( x)dx →V ( xD ) − V (0+ ) = − ∫
xD
E ( x) = − ( xD − x)dx → −VS = − A ( xD − x) 2 +
dx V (0+ ) 0+ 0+
εs 2ε s 0
qN
→ VS = A xD 2
2ε s
qN A x d
Inoltre ε ox ⋅ Eox =ε s ⋅ Es (0+ ) e Es (0+ ) = , quindi ricaviamo
εs
qN A x d dV qN A xD xox
Eox = e dalla E ( x) = − otteniamo Vox =
ε ox dx ε ox
Modello Capacitivo
ε ox AG
In arricchimento VG < 0 → Cmos = Cox =
xox
8 – S. Martinoia AA2017-18
Cmos
=1
Cox
In Depletion: 0 ≤ V G ≤ V Th
1 1 1
= +
Cmos Cs Cox
ε ox ⋅ Ag
Cox =
xox
9 – S. Martinoia AA2017-18
dQs
Cs =
dVs
2ε sVs
Qs =
−qN A AG xD =
−qN A AG − AG 2qN Aε sVs
=
qN A
dQs 2qN Aε s 1 ε s ⋅ Ag
=
Cs = AG = AGε s =
dVs 2 Vs 2ε sVs xd (Vs )
qN A
ε s ⋅ Ag
Quindi, ricordando che xd dipende da Vs : Cs =
xd (Vs )
Cox Cs
Cmos = (Condensatori in Serie)
Cox + Cs
Cmos Cs 1 1 1
= = = =
Cox Cox + Cs 1 + Cox 1 + ε ox AG xD ε x
1 + ox D
Cs xox ε s AG xoxε s
In Inversione : V G > V Th
Cmos
Per l’ipotesi, =1
Cox
10 – S. Martinoia AA2017-18
Osservazione:
Q Q
V=
G Vox + Vs ma, sapendo che Q = CV → Vox =G = − s
Cox Cox
Q
VG − s + Vs
=
Cox
QN A
In svuotamento Qs = −QN A → VG = + Vs
Cox
Alla soglia VG = VTH → Vs = Vs *, xD = xD *
QN A *
=
VTH + Vs *
Cox
QN A * +Qn Qn
VG = + Vs * → VG = + VTH → Q=
n Cox (VG − VTH )
Cox Cox
=
Qn Cox (VG − VTH )
Riepilogo
11 – S. Martinoia AA2017-18
Accumulo:
VG < 0
Qs > 0 QG < 0
QS QS
Da Gauss: ∫ E ⋅ dS= εs
→ − AG E (0+=
)
εs
→ Q=
s −ε s AG E (0+ ) ( segno “-“ ricordando che il
flusso è uscente)
ρ = q[ p p − n p − N A− ] ≅ q[ p − n − N A − ] ≅ qp( x)
V ( x)
−
KT
dE q
= p pe q
dx ε s
2
dE d 2V 1 d dV
Ricordando che =
− 2 = −
dx dx 2 dV dx
V ( x)
−
2 KT
1 d dV q
− = ppe q
2 dV dx ε s
V ( x)
−
E (∞) 2 V (∞) KT
dV 2q
∫ = − ∫
q
p pe dV
+ dx + εs
E (0 ) V (0 )
+
Ricordando che V (∞) =0 e V (0 ) = Vs
Vs Vs
− −
KT KT
2q KT 2q KT
p (1 − e q
)→ q
− 1) →
2 2
− E (0+ ) = E (0+ ) p p (e
εs q p
εs q
V V
− s − s
KT KT
E (0+ ) = − 2 q KT
εs q p
p (e q
−1) ≅ −
2 KT
εs
ppe q
Quindi
Vs
−
2 KT
−ε s AG E (0+ ) =
Qs = AG 2ε s KTp p e q
12 – S. Martinoia AA2017-18
Svuotamento
0 ≤ V G ≤ V Th
Qs < 0 QG > 0 QG + Qs =
0
ρ =q[ p − n − N A − ] =−qN A
D E (∞) x
dE qN A qN
εs = −qN A → ∫ dE = − ∫ dx → − E (0+ ) = − A xD
dx E (0+ ) 0+
εs εs
Quindi Qs =
−ε s AG E (0+ ) =
−qN A AG xD
1 1 qN A 2 2ε sVs
=Vs =
xD E (0+ ) xD =
→ xD
2 2 εs qN A
1
Qs = − AG 2qN Aε s (Vs ) 2
−qN A AG xD =
Questo fino a che non raggiungo VG = VT tensione di soglia, definita come:
Vs Vs
KT 2 KT
2 KT N A n
VS* = ln da =
ns N=
A npe = e q i q
q ni NA
1
Da cui Qs * = − AG 2qN Aε s (Vs *) 2
Inversione
VG > 0
Qs < 0 QG + Qs =
0
ρ q[ p − n − N A − ] ≅ −q(n( x) + N A − )
=
V ( x)
KT
dE q
=
− (n p e q
+ NA)
dx εs
V
E (∞) V (∞)
2q n p KT
2 KT
dV
qVs
2q
∫= ε s V (0∫+ ) p
+ 2
d (n e q
+ N A )dV →
= − E (0 ) (1 − e KT ) − N AVs →
E (0+ )
dx εs q
2q ni 2 KT KTs
qV
+ 2
=
E (0 ) (e − 1) + N AVs
ε s N Aq
13 – S. Martinoia AA2017-18
2q ni 2 KT KTs ni 2 KT qV
qV s
+
E (0 ) = −ε s AG E (0 ) =
e + N AVs → Qs = +
− AG 2qε s e KT + N AVs
ε s N Aq N Aq
Esercizio
at
Consideriamo un condensatore MOS con N A = 1016 3
e xox = 100nm . Calcolare xD* , VT
cm
1 pF pF
sapendo che ε ox = e εs = 1 .
3 cm cm
2 KT N A 1016
VS* = ln =2 ⋅ 26 ⋅10−3 ln 10 =0.72V
q ni 10
1 qN A ( xD )
* 2
Ma VS =
*
quindi
2 εS
2ε sVs * 2 ⋅10−12 0.72
x =
*
= −19 16 = 0.3µ m
3 ⋅10−5 cm =
1.6 ⋅10 ⋅10
D
qN A
qN x x* 1.6 ⋅10−19 ⋅1016 ⋅10−5 ⋅ 3 ⋅10−5
VT =Vox* + Vs* = A ox D + 0.72 = ⋅ 3 + 0.72 =1.44 + 0.72 =2.16V
ε ox 10−12
Esercizio
at
Consideriamo un condensatore MOS con N A = 1015 e xox = 100nm . Calcolare xD* , VT
cm3
1 pF pF
sapendo che ε ox = e εs = 1 .
3 cm cm
2 KT N A
VS* = ln 52 ⋅10−3 ln105 =
= 0.6V
q ni
2ε V * 2 ⋅10−12 0.6
xD* = s s = −19
= 0.86 µ m
0.86 ⋅10−4 cm =
qN A 1.6 ⋅10 ⋅10 15
14 – S. Martinoia AA2017-18
15 – S. Martinoia AA2017-18