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CHAPTER 6:
DIFFUSION IN SOLIDS
Diffusion ‐ Mass transport by atomic motion.
Movement of a atom from an area of high
concentration of that an area of lower concentration
Gases & Liquids – random motion
Solids – vacancy diffusion or interstitial diffusion
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C
C
A D
A
D
B
B
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Diffusion Mechanisms
Vacancy Diffusion:
• atoms exchange with vacancies
• applies to substitutional impurities atoms
• rate depends on:
--number of vacancies
--activation energy to exchange.
Diffusion Simulation
• Simulation of
interdiffusion
across an interface:
• Rate of substitutional
diffusion depends on:
--vacancy concentration
--frequency of jumping.
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• Interstitial diffusion – smaller atoms can
diffuse between atoms.
Processing Using Diffusion
• Case Hardening:
--Diffuse carbon atoms
into the host iron atoms
att the
th surface.
f
--Example of interstitial
diffusion is a case
hardened gear.
• Result:
The presence of C
atoms makes iron (steel) harder.
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Processing Using Diffusion
• Doping silicon with phosphorus for n-type semiconductors:
• Process: 0.5 mm
1 Deposit P rich
1.
layers on surface.
magnified image of a computer chip
silicon
2. Heat it.
3. Result: Doped
p light regions: Si atoms
semiconductor
regions.
Diffusion
• How do we quantify the amount or rate of diffusion?
M=
mass J ∝ slope
diffused
time
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MODELING DIFFUSION: FLUX
x-direction
• Flux:
Unit area A
through
1 dM ⎡ kg
g⎤ ⎡ atoms⎤
J= ⇒⎢ ⎥ or ⎢ 2 ⎥ which
A dt ⎣m2s ⎦ ⎣ m s ⎦ atoms
move.
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STEADY STATE DIFFUSION
• Steady State: the concentration profile doesn't
change with time.
Jx(left) Jx(right)
x
Concentration, C, in the box doesn
doesn’tt change w/time.
Steady State:
Jx(left) = Jx(right)
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Steady‐State Diffusion
Rate of diffusion independent of time
dC
Flux proportional to concentration gradient =
dx
dC
C2 C2 J = −D
dx
x1 x2 D ≡ diffusion coefficient
x
dC ΔC C2 − C1
if linear ≅ =
dx Δx x2 − x1
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• Th
The steeper
t the
th concentration
t ti profile,
fil
the greater the flux!
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Diffusion and Temperature
• Diffusion coefficient increases with increasing T.
⎛ Qd ⎞
D = Do exp⎜− RT ⎟
⎝ ⎠
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Diffusion and Temperature
D has exponential dependence on T
1500
1000
600
300
T(°C)
( )
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10-8
10-20
0.5 1.0 1.5 1000 K/T
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Other Diffusion paths
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