Low-Noise Matched

Transistor Array ICs

THAT 300 Series

FEATURES APPLICATIONS
• 4 Matched NPN Transistors • Low Noise Front Ends
º 300 typical hfe of 100
º 300A minimum hfe of 150
º 300B minimum hfe of 300
• 4 Matched PNP Transistors • Microphone Preamplifiers
º 320 typical hfe of 75
• 2 Matched PNP and 2 Matched NPN
Transistors • Log/Antilog Amplifiers
º 340 PNP typical hfe of 75
º 340 NPN typical hfe of 100
• Low Voltage Noise • Current Sources
º 0.75 nV/ √Hz (PNP)
º 0.8 nV/ √Hz (NPN)
• High Speed • Current Mirrors
º fT = 350 MHz (NPN)
º fT = 325 MHz (PNP)
• 500 μV matching between devices
• Multipliers
• Dielectrically Isolated for low crosstalk
and high DC isolation
• 36V VCEO

Description
The THAT 300, 320 and 340 are large
geometry, 4-transistor, monolithic NPN and/or PNP
arrays. They exhibit both high speed and low noise,
with excellent parameter matching between transis-
tors of the same gender. Typical base-spreading
resistance is 25 Ω for the PNP devices (30 Ω for the
low-gain NPNs), so their resulting voltage noise is
under 1 nV/√Hz. This makes the 300 series ideally
suited for low-noise amplifier input stages, log ampli-
fiers, and many other applications. The four-NPN
transistor array is available in versions selected for
hfe with minimums of 150 (300A) or 300 (300B).
Fabricated in a dielectrically isolated, comple-
mentary bipolar process, each transistor is electri-
cally insulated from the others by a layer of
insulating oxide (not the reverse-biased PN junctions
used in conventional arrays). As a result, they exhibit
inter-device crosstalk and DC isolation similar to
that of discrete transistors. The resulting low
collector-to-substrate capacitance produces a typical
NPN fT of 350 MHz (325 MHz for the PNPs).
Substrate biasing is not required for normal opera-
tion, though the substrate should be ac-grounded to
optimize speed and minimize crosstalk.
An eight-transistor bare-die array with similar
performance characteristics (the THAT 380G) is also
available from THAT Corporation. Please contact us
directly or through your local distributor for more
information. Military-grade temperature range
packages are available from TT Semiconductor (see
www.ttsemiconductor.com for more information).

Part Number Configuration Package

300P14-U DIP14
4-Matched NPN Transistors, Beta = 60 min.
300S14-U SO14
300AS14-U 4-Matched NPN Transistors, Beta = 150 min. SO14
300BS14-U 4-Matched NPN Transistors, Beta = 300 min. SO14
320P14-U DIP14
4-Matched PNP Transistors
320S14-U SO14
340P14-U 2-Matched NPN Transistors and DIP14
340S14-U 2-Matched PNP Transistors SO14

Table 1. Ordering Information

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com
Copyright © 2010, THAT Corporation. Document 600041 Rev 02
Document 600041 Rev 02 Page 2 of 5 THAT 300 Series Transistor Array ICs

THAT 300 THAT 320 THAT 340

1 14 1 14 1 14

2 13 2 13 2 13
Q1 Q2 Q1 Q2 Q1 Q2
3 12 3 12 3 12

4 SUB SUB 11 4 SUB SUB 11 4 SUB SUB 11

5 10 5 10 5 10

6 9 6 9 6 9
Q3 Q4 Q3 Q4 Q3 Q4
7 8 7 8 7 8

Figure 1. 300 Pinout Figure 2. 320 Pinout Figure 3. 340 Pinout

SPECIFICATIONS 1

Absolute Maximum Ratings 2,3

NPN Collector-Emitter Voltage (BVCEO) 36 V Collector Current 30 mA
NPN Collector-Base Voltage (BVCBO) 36V Emitter Current 30 mA
PNP Collector-Emitter Voltage (BVCEO) –36 V Operating Temperature Range (TOP) -40 to +85 °C
PNP Collector-Base Voltage (BVCBO) –36 V Maximum Junction Temperature (TJMAX) +125 °C
Collector-Substrate Voltage (BVCS) ± 100 V Storage Temperature (TST) -45 to +125 °C

NPN Electrical Characteristics 2

Parameter Symbol Conditions 300 / 340(Q1,Q2) 300A 300B Units
Min Typ Max Min Typ Max Min Typ Max
VCB = 10 V, IC = 1 mA 60 100 — 150 — — 300 — —
NPN Current gain hfe
IC = 10 µA — 100 — — — — — — —

NPN Current Gain Matching Δhfe VCB = 10V, IC = 1mA — 4 — — 4 — — 4 — %

NPN Noise Voltage Density eN VCB = 10V, IC = 1 mA, 1kHz — 0.8 — — 0.9 — — 1 — nV√Hz

NPN Gain-Bandwidth Product fT IC = 1 mA, VCB = 10V — 350 — — 350 — — 350 — MHz

NPN ΔVBE
IC = 1 mA — 0.5 3 — 0.5 3 — 0.5 3 mV
300: |VBE1-VBE2| ; |VBE3-VBE4| VOS
IC = 10 mA — 0.5 — — 0.5 — — 0.5 — mV
340: |VBE1-VBE2|
NPN ΔIB
IC = 1 mA — 500 1500 — 200 600 — 100 300 nA
300: |IB1-IB2| ; |IB3-IB4| IOS
IC = 10 μA — 5 — — 2 — — 1 — nA
340: |IB1-IB2|
NPN Collector-Base Leakage
ICBO VCB = 25 V — 25 — — 25 — — 25 — pA
Current

NPN Bulk Resistance rBE VCB = 0V, 10 μA < IC < 10mA — 2 — — 2 — — 2 — Ω

NPN Base Spreading Resistance rbb VCB = 10 V, IC = 1 mA — 30 — — TBD — — TBD — Ω

NPN Collector Saturation Voltage VCE(SAT) IC = 1 mA, IB = 100μA — 0.05 — — 0.05 — — 0.05 — V

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com
Copyright © 2010, THAT Corporation. All rights reserved.
THAT 300 Series Transistor Array ICs Page 3 of 5 Document 600041 Rev 02

SPECIFICATIONS 1 (Cont’d)

NPN Electrical Characteristics 2 (cont’d)

Parameter Symbol Conditions 300 / 340(Q1,Q2) 300A 300B Units
Min Typ Max Min Typ Max Min Typ Max

NPN Output Capacitance COB VCB = 10V, IE = 0mA, 100kHz — 3 — — 3 — — 3 — pF

NPN Breakdown Voltage BVCEO IC = 10 μAdc, IB = 0 36 40 — 36 40 — 36 40 — V

Input Capacitance CEBO IC = 0 mA, VEB = 0 V — 5 — — 5 — — 5 — pF

PNP Electrical Characteristics 2

Parameter Symbol Conditions Min Typ Max Units

PNP Current Gain hfe VCB = -10 V

IC = -1 mA 50 75 —
IC = -10 μA — 75 —

PNP Current Gain Matching Δhfe VCB = -10 V, IC = -1 mA — 5 — %

PNP Noise Voltage Density eN VCB = -10 V, IC = -1 mA, 1 kHz — 0.75 — nV√Hz

PNP Gain-Bandwidth Product fT IC = -1 mA, VCB = -10 V — 325 — MHz

PNP ΔVBE VOS IC = -1 mA — 0.5 3 mV

320: |VBE1-VBE2| ; |VBE3-VBE4| IC = -10 μA — 0.5 — mV
340: |VBE1-VBE2|

PNP ΔIB IOS IC = -1 mA — 700 1800 nA

320: |IB1-IB2| ; |IB3-IB4| IC = -10 μA — 7 — nA
340: |IB1-IB2|

PNP Collector-Base Leakage Current ICBO VCB = -25 V — –25 — pA

PNP Bulk Resistance rBE VCB = 0 V, -10μA > IC> -10 mA — 2 — Ω

PNP Base Spreading Resistance rbb VCB = -10 V, IC = -1 mA — 25 — Ω

PNP Collector Saturation Voltage VCE(SAT) IC = -1 mA, IB = -100 μA — –0.05 — V

PNP Output Capacitance COB VCB = -10 V, IE = 0 mA, 100 kHz — 3 — pF

PNP Breakdown Voltage BVCEO IC = -10 mAdc, IB = 0 -36 -40 — V

Input Capacitance CEBO IC = 0 mA, VEB = 0 V — 6 — pF

1. All specifications are subject to change without notice.

2. Unless otherwise noted, TA = 25ºC.
3. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; the
functional operation of the device at these or any other conditions above those indicated in the operational sections of this sp ecification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com
Copyright © 2010, THAT Corporation. All rights reserved.
Document 600041 Rev 02 Page 4 of 5 THAT 300 Series Transistor Array ICs

Packaging and Soldering Information

The THAT 300, 320 and 340 are available in 14-pin
PDIP and 14-pin surface mount (SOIC) packages.
Package dimensions are shown below.
The 300-series packages are entirely lead-free. The
lead-frames are copper, plated with successive layers of
nickel, palladium, and gold. This approach makes it
possible to solder these devices using lead-free and lead-
bearing solders.
Neither the lead-frames nor the plastic mold
compounds used in the 300-series contains any hazard-
ous substances as specified in the European Union's
Directive on the Restriction of the Use of Certain Hazard-
ous Substances in Electrical and Electronic Equipment
2002/95/EG of January 27, 2003. The surface-mount
package is suitable for use in a 100% tin solder process.

Package Characteristics
Parameter Symbol Conditions Typ Units

Through-hole package See Fig. 4 for dimensions 14 Pin PDIP

Thermal Resistance θJA DIP package soldered to board 100 ºC/W

Environmental Regulation Compliance Complies with January 27, 2003 RoHS requirements

Surface mount package See Fig. 5 for dimensions 14 Pin SOP

Thermal Resistance θJA SO package soldered to board 100 ºC/W

Soldering Reflow Profile JEDEC JESD22-A113-D (250 ºC)

Moisture Sensitivity Level MSL Above-referenced JEDEC soldering profile 1

Environmental Regulation Compliance Complies with RoHS requirements

0.750±0.004
(19.05±0.10)
0.050
(1.27)
0.25±.004
Typ
(6.35±0.10)
1

0.157 0.245
0.30 ±0.02 (3.99) (6.2)
(7.62 ±0.5) Max Max
0.060
(1.52) 0.125±0.004
Typ. 1
(3.18±0.10)

0.018 (0.46)
Max

0.344 (8.74) 0.069

0.010 Max (1.75)
0.018 (0.25) 0.010
(0.46) Max
(0.25)
0.10 Typ.
(2.54) Max

0.075
(1.91)

Figure 4. Dual-In-Line Package Outline Figure 5. Surface-Mount Package Outline

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com
Copyright © 2010, THAT Corporation. All rights reserved.
 DMMT3906W
MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Planar Die Construction A SOT-363
• Intrinsically Matched PNP Pair (Note 1) Dim Min Max
C2 E2 E1
• Small Surface Mount Package
A 0.10 0.30
• 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)
• Lead Free/RoHS Compliant (Note 2)
B C B 1.15 1.35
• Qualified to AEC-Q101 Standards for High Reliability C 2.00 2.20
B2 B1 C1
• "Green" Device (Note 4 and 5) D 0.65 Nominal
F 0.30 0.40
H
Mechanical Data H 1.80 2.20
K M J — 0.10
• Case: SOT-363
K 0.90 1.00
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 J L 0.25 0.40
D F L
• Moisture Sensitivity: Level 1 per J-STD-020C M 0.10 0.25
• Terminals: Solderable per MIL-STD-202, Method 208 α 0° 8°
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). All Dimensions in mm
• Terminal Connections: See Diagram
• Marking Information: K4B, See Page 4
• Ordering & Date Code Information: See Page 4
• Weight: 0.015 grams (approximate)

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous IC -200 mA
Power Dissipation (Note 3) Pd 200 mW
Thermal Resistance, Junction to Ambient (Note 3) RθJA 625 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Notes: 1. Built with adjacent die from a single wafer.
2. No purposefully added lead.
3. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30312 Rev. 11 - 2 1 of 4 DMMT3906W

© Diodes Incorporated
www.diodes.com
Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage V(BR)CBO -40 ⎯ V IC = -10μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -40 ⎯ V IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -10μA, IC = 0
Collector Cutoff Current ICEX ⎯ -50 nA VCE = -30V, VEB(OFF) = -3.0V
Base Cutoff Current IBL ⎯ -50 nA VCE = -30V, VEB(OFF) = -3.0V
ON CHARACTERISTICS (Note 6)
60 ⎯ IC = -100µA, VCE = -1.0V
80 ⎯ IC = -1.0mA, VCE = -1.0V
DC Current Gain (Note 7) hFE 100 300 IC = -10mA, VCE = -1.0V
⎯
60 ⎯ IC = -50mA, VCE = -1.0V
30 ⎯ IC = -100mA, VCE = -1.0V
-0.25 IC = -10mA, IB = -1.0mA
Collector-Emitter Saturation Voltage (Note 7) VCE(SAT) ⎯ V
-0.40 IC = -50mA, IB = -5.0mA
-0.65 -0.85 IC = -10mA, IB = -1.0mA
Base-Emitter Saturation Voltage (Note 7) VBE(SAT) V
⎯ -0.95 IC = -50mA, IB = -5.0mA
Base-Emitter Voltage Matching ΔVBE ⎯ -1 mV VCE = -5V, IC = -2mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ⎯ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo ⎯ 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 2.0 12 kΩ
-4
Voltage Feedback Ratio hre 0.1 10 x 10 VCE = 10V, IC = 1.0mA,
Small Signal Current Gain hfe 100 400 ⎯ f = 1.0kHz
Output Admittance hoe 3.0 60 μS
VCE = -20V, IC = -10mA,
Current Gain-Bandwidth Product fT 250 ⎯ MHz
f = 100MHz
VCE = -5.0V, IC = -100μA,
Noise Figure NF ⎯ 4.0 dB
RS = 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td ⎯ 35 ns VCC = -3.0V, IC = -10mA,
Rise Time tr ⎯ 35 ns VBE(off) = 0.5V, IB1 = -1.0mA
Storage Time ts ⎯ 225 ns VCC = -3.0V, IC = -10mA,
Fall Time tf ⎯ 75 ns IB1 = IB2 = -1.0mA
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. The DC current gain, hFE, (matched at IC = -10mA and VCE = -1.0V) Collector Emitter Saturation Voltage, VCE(SAT),
and Base Emitter Saturation Voltage, VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%.

DS30312 Rev. 11 - 2 2 of 4 DMMT3906W

© Diodes Incorporated
www.diodes.com
 200 100

COBO, OUTPUT CAPACITANCE (pF)

PD, POWER DISSIPATION (mW)

CIBO, INPUT CAPACITANCE (pF)

150

100 10

50

0 1
0 25 50 75 100 125 150 175 200 0.1 1 10 100
TA, AMBIENT TEMPERATURE (°C) VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 1, Max Power Dissipation vs. Fig. 2, Input and Output Capacitance vs.
Ambient Temperature Collector-Base Voltage

1,000 10

VCE(SAT), COLLECTOR-EMITTER
hFE, DC CURRENT GAIN

SATURATION VOLTAGE (V)

1
100

0.1
10

1 0.01
0.1 1 10 100 1,000 1 10 100 1,000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs. Fig. 4, Typical Collector-Emitter Saturation Voltage
Collector Current vs. Collector Current

1.0
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)

0.9

0.8

0.7

0.6
IC
IB = 10

0.5
1 10 100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current

DS30312 Rev. 11 - 2 3 of 4 DMMT3906W

© Diodes Incorporated
www.diodes.com
Ordering Information (Note 8)

Device Packaging Shipping

DMMT3906W-7-F SOT-363 3000/Tape & Reel
Notes: 8. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

K4B = Product Type Marking Code

YM = Date Code Marking

YM
K4B Y = Year ex: T = 2006
M = Month ex: 9 = September

Date Code Key

Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code N P R S T U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

DS30312 Rev. 11 - 2 4 of 4 DMMT3906W

© Diodes Incorporated
www.diodes.com
 Transistors

General purpose transistor

(dual transistors)
IMX17

Features
External dimensions (Units: mm)

1) Two 2SD1484K chips in an SMT
package.
2) Mounting possible with SMT3 auto-
matic mounting machine.
3) Transistor elements are indepen-
dent, eliminating interference.
4) High collector current.
IC = 500mA
5) Mounting cost and area can be cut
in half.

Structure
Epitaxial planar type
NPN silicon transistor

The following characteristics apply to

both Tr1 and Tr2.

Absolute maximum ratings (Ta = 25C)

(96-523-D15)

489
 Transistors IMX17

Electrical characteristics (Ta = 25C)

Packaging specifications

Electrical characteristic curves

490
Transistors IMX17

491
D44H Series (NPN),
D45H Series (PNP)
Preferred Devices

Complementary Silicon
Power Transistors
These series of plastic, silicon NPN and PNP power transistors can
be used as general purpose power amplification and switching such http://onsemi.com
as output or driver stages in applications such as switching regulators,
converters and power amplifiers.
10 AMP COMPLEMENTARY
Features SILICON POWER
•Low Collector-Emitter Saturation Voltage TRANSISTORS 60, 80 VOLTS
VCE(sat) = 1.0 V (Max) @ 8.0 A
•Fast Switching Speeds
MARKING
•Complementary Pairs Simplifies Designs 4
DIAGRAM
•Pb-Free Packages are Available*

MAXIMUM RATINGS
Rating Symbol Value Unit TO-220AB
D4xHyyG
CASE 221A-09
Collector-Emitter Voltage VCEO Vdc AYWW
D44H8, D45H8 STYLE 1
60 1
D44H11, D45H11 80 2
3
Emitter Base Voltage VEB 5.0 Vdc
D4xHyy = Device Code
Collector Current IC Adc x = 4 or 5
- Continuous 10 yy = 8 or 11
- Peak (Note 1) 20 A = Assembly Location
Total Power Dissipation PD W Y = Year
@ TC = 25°C 70 WW = Work Week
@ TA = 25°C 2.0 G = Pb-Free Package

Operating and Storage Junction TJ, Tstg -55 to +150 °C

Temperature Range ORDERING INFORMATION
THERMAL CHARACTERISTICS Device Package Shipping†
Characteristic Symbol Max Unit D44H8 TO-220 50 Units/Rail
Thermal Resistance, Junction-to-Case RqJC 1.8 °C/W D44H8G TO-220 50 Units/Rail
(Pb-Free)
Thermal Resistance, Junction-to-Ambient RqJA 62.5 °C/W
D44H11 TO-220 50 Units/Rail
Maximum Lead Temperature for Soldering TL 275 °C
Purposes: 1/8″ from Case for 5 Seconds D44H11G TO-220 50 Units/Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum (Pb-Free)
Ratings are stress ratings only. Functional operation above the Recommended
D45H8 TO-220 50 Units/Rail
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. D45H8G TO-220 50 Units/Rail
1. Pulse Width v 6.0 ms, Duty Cycle v 50%. (Pb-Free)
D45H11 TO-220 50 Units/Rail
D45H11G TO-220 50 Units/Rail
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
*For additional information on our Pb-Free strategy and soldering details, please Brochure, BRD8011/D.
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.

© Semiconductor Components Industries, LLC, 2007 1 Publication Order Number:

November, 2007 - Rev. 10 D44H/D
 D44H Series (NPN),

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Typ Max Unit

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector-Emitter Sustaining Voltage D44H8, D45H8 VCEO(sus) 60 - - Vdc
(IC = 30 mAdc, IB = 0 Adc) D44H11, D45H11 80 - -

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES - - 10 mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VEB = 5.0 Vdc) IEBO - - 10

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Current Gain hFE -
(VCE = 1.0 Vdc, IC = 2.0 Adc) 60 - -

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 1.0 Vdc, IC = 4.0 Adc) 40 - -

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector-Emitter Saturation Voltage VCE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 8.0 Adc, IB = 0.4 Adc) - - 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base-Emitter Saturation Voltage VBE(sat) - - 1.5 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 8.0 Adc, IB = 0.8 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Capacitance Ccb pF
(VCB = 10 Vdc, ftest = 1.0 MHz) D44H Series 90

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
- -
D45H Series - 160 -

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Gain Bandwidth Product
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ fT MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) D44H Series - 50 -

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
D45H Series - 40 -

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING TIMES

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Delay and Rise Times td + tr ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 5.0 Adc, IB1 = 0.5 Adc) D44H Series - 300 -
D45H Series - 135 -

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Time
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc) D44H Series
ts
- 500 -
ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
D45H Series - 500 -

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Fall Time tf ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 5.0 Adc, IB1 = 102 = 0.5 Adc) D44H Series - 140 -
D45H Series - 100 -

http://onsemi.com
2
 D44H Series (NPN),

1000 1000
VCE = 1 V VCE = 1 V

25°C
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

125°C
125°C

-40°C 25°C
100 100 -40°C

10 10
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 1. D44H11 DC Current Gain Figure 2. D45H11 DC Current Gain

1000 1000
VCE = 5 V VCE = 5 V
hFE, DC CURRENT GAIN

25°C hFE, DC CURRENT GAIN

125°C
125°C
25°C
100 -40°C 100 -40°C

10 10
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 3. D44H11 DC Current Gain Figure 4. D45H11 DC Current Gain

0.40 0.6
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10
SATURATION VOLTAGE (VOLTS)

SATURATION VOLTAGE (VOLTS)

0.35
0.5
0.30
-40°C 0.4
0.25 -40°C
0.20 0.3
25°C
0.15 25°C 125°C
0.2
0.10 125°C
0.1
0.05
0 0
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 5. D44H11 ON-Voltage Figure 6. D45H11 ON-Voltage

http://onsemi.com
3
 D44H Series (NPN),

1.2 1.4
VBE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10
SATURATION VOLTAGE (VOLTS)

SATURATION VOLTAGE (VOLTS)

-40°C 1.2
1.0
-40°C
1.0
0.8
125°C
0.8
0.6 125°C
25°C 0.6
0.4 25°C
0.4

0.2 0.2

0 0
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 7. D44H11 ON-Voltage Figure 8. D45H11 ON-Voltage

100 TA TC
IC, COLLECTOR CURRENT (AMPS)

PD, POWER DISSIPATION (WATTS)

50
30
20 1.0 ms
100 ms 3.0 60
10 10 ms
5.0
3.0 2.0 40
2.0 TC ≤ 70° C dc 1.0 ms TC
1.0 DUTY CYCLE ≤ 50%
0.5 1.0 20 TA
0.3 D44H/45H8
0.2 D44H/45H10,11
0.1 0 0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0 20 40 60 80 100 120 140 160
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) T, TEMPERATURE (°C)
Figure 9. Maximum Rated Forward Bias Figure 10. Power Derating
Safe Operating Area

1.0
0.7
RESISTANCE (NORMALIZED)

D = 0.5
r(t), TRANSIENT THERMAL

0.5

0.3
0.2
0.2
0.1
0.1 P(pk)
ZqJC(t) = r(t) RqJC
0.07 0.05 RqJC = 1.56°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
PULSE TRAIN SHOWN t1
0.03
READ TIME AT t1 t2
0.02 0.01 TJ(pk) - TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)
Figure 11. Thermal Response

http://onsemi.com
4
 D44H Series (NPN),

PACKAGE DIMENSIONS

TO-220
CASE 221A-09
ISSUE AE

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
-T- PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
T S
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
1 2 3 U D 0.025 0.035 0.64 0.88
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
K J 0.014 0.025 0.36 0.64
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
D Z --- 0.080 --- 2.04
N

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free ON Semiconductor Website: www.onsemi.com
 Literature Distribution Center for ON Semiconductor  USA/Canada
 P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
 Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada  Phone: 421 33 790 2910
 Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
 Email: orderlit@onsemi.com  Phone: 81-3-5773-3850 Sales Representative

http://onsemi.com D44H/D
5
 EMX1 / UMX1N / IMX1
Transistors

General purpose transistors

(dual transistors)
EMX1 / UMX1N / IMX1

!Features !External dimensions (Units : mm)

1) Two 2SC2412K chips in a EMT or UMT or SMT
EMX1
package.
2) Mounting possible with EMT3 or UMT3 or SMT3

0.5 0.5
(4) (3)

0.22

1.0
1.6
(5) (2)

automatic mounting machines. (6)

1.2
1.6
(1)

3) Transistor elements are independent, eliminating

0.13

0.5
interference. Each lead has same dimensions

4) Mounting cost and area can be cut in half. ROHM : EMT6

Abbreviated symbol : X1

UMX1N

0.65
!Structure

(3)
(4)

1.3
2.0
0.2

(2)
Epitaxial planar type
(5)
(6)

0.65
(1)
NPN silicon transistor 1.25

2.1
0.15

0.9
0.7
0to0.1

0.1Min.

!Equivalent circuit Each lead has same dimensions

ROHM : UMT6
EMX1 / UMX1N IMX1 EIAJ : SC-88
(3) (2) (1) (4) (5) (6) Abbreviated symbol : X1

Tr1 Tr1 IMX1

Tr2 Tr2
0.95 0.95
(6)

(1)
0.3

2.9
1.9
(2)
(5)

(4) (5) (6) (3) (2) (1)

(4)

(3)

1.6

2.8
0.15

1.1
0.8

The following characteristics apply to both Tr1 and Tr2.

0to0.1

0.3to0.6
Each lead has same dimensions

ROHM : SMT6
EIAJ : SC-74

!Absolute maximum ratings (Ta = 25°C) Abbreviated symbol : X1

Parameter Symbol Limits Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 7 V
Collector current IC 150 mA
Power EMX1, UMX1N 150 (TOTAL) ∗1
PC mW
dissipation IMX1 300 (TOTAL) ∗2
Junction temperature Tj 150 ˚C
Storage temperature Tstg −55∼+150 ˚C
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.

1/3
 EMX1 / UMX1N / IMX1
Transistors

!Electrical characteristics (Ta = 25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO 60 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage BVEBO 7 − − V IE=50µA
Collector cutoff current ICBO − − 0.1 µA VCB=60V
Emitter cutoff current IEBO − − 0.1 µA VEB=7V
Collector-emitter saturation voltage VCE (sat) − − 0.4 V IC/IB=50mA/5mA
DC current transfer ratio hFE 120 − 560 − VCE=6V, IC=1mA
Transition frequency fT − 180 − MHz VCE=12V, IE=−2mA, f=100MHz ∗
Output capacitance Cob − 2 3.5 PF VCB=12V, IE=0A, f=1MHz

!Packaging specifications
Package Taping
Code T2R TN T110
Basic ordering
Type unit (pieces) 8000 3000 3000

EMX1
UMX1N
IMX1

!Electrical characteristic curves

50 0.50mA 10
100 30µA
VCE=6V Ta=25˚C mA Ta=25˚C
0.45mA
COLLECTOR CURRENT : IC (mA)

0.40 27µA
COLLECTOR CURRENT : IC (mA)

COLLECTOR CURRENT : IC (mA)

20
0.35mA 8 24µA
80
10 0.30mA 21µA
5 0.25mA
60 6 18µA
Ta=100˚C
25˚C
−55˚C

0.20mA 15µA
2
0.15mA 4 12µA
1 40
9µA
0.10mA
0.5 6µA
20 2
0.05mA
0.2 3µA

0 IB=0A IB=0A
0.1 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 20

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output
characteristics characteristics ( I ) characteristics ( II )

2/3
 EMX1 / UMX1N / IMX1
Transistors

COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)

500 500
Ta=25˚C VCE=5V 0.5 Ta=25˚C
Ta=100˚C

25˚C

DC CURRENT GAIN : hFE

DC CURRENT GAIN : hFE

200 VCE=5V 200 0.2

3V −55˚C
1V
100 100 0.1
IC/IB=50

50 50 0.05 20
10

20 20 0.02

10 10 0.01
0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200

COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. collector Fig.5 DC current gain vs. collector Fig.6 Collector-emitter saturation
current ( I ) current ( II ) voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)

0.5 0.5
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)

COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)

0.5 IC/IB=10 IC/IB=50
Ta=25˚C

0.2 Ta=100˚C
0.2 0.2
25˚C
IC/IB=50 Ta=100˚C −55˚C
20 0.1 0.1
0.1 25˚C
10 −55˚C
0.05 0.05
0.05

0.02
0.02 0.02

0.01 0.01
0.01
0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)

Fig.8 Collector-emitter saturation Fig.9 Collector-emitter saturation

Fig.7 Collector-emitter saturation
voltage vs. collector current ( II ) voltage vs. collector current ( III )
voltage vs. collector current ( I )
BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps)

Ta=25˚C 20 Ta=25˚C
: Cib (pF)
TRANSITION FREQUENCY : fT (MHz)

Ta=25˚C
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

VCE=6V 200 f=32MHZ

500 f=1MHz VCB=6V
IE=0A
10 Cib IC=0A
100
EMITTER INPUT CAPACITANCE

200 5
50

100 2 20
Co
b

1 10
50
−0.5 −1 −2 −5 −10 −20 −50 −100 0.2 0.5 1 2 5 10 20 50 −0.2 −0.5 −1 −2 −5 −10

EMITTER CURRENT : IE (mA) EMITTER CURRENT : IE (mA)

COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.10 Gain bandwidth product vs. Fig.11 Collector output capacitance vs. Fig.12 Base-collector time constant vs.
emitter current collector-base voltage emitter current
Emitter input capacitance vs.
emitter-base voltage

3/3