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Power Transistors

2SD2136
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
Complementary to 2SB1416
7.5±0.2 4.5±0.2

3.8±0.2
■ Features

90˚
10.8±0.2
• High forward current transfer ratio hFE which has satisfactory linearity.
• Low collector-emitter saturation voltage VCE(sat) 0.65±0.1 0.85±0.1
1.0±0.1 0.8 C 0.8 C
• Allowing supply with the radial taping

2.5±0.1
0.7±0.1

16.0±1.0
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C 1.15±0.2
1.15±0.2
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V 0.5±0.1 0.4±0.1
Collector-emitter voltage (Base open) VCEO 60 V

2.05±0.2
0.8 C 1 2 3
Emitter-base voltage (Collector open) VEBO 6 V
1: Emitter
Collector current IC 3 A
2: Collector
2.5±0.2 2.5±0.2
Peak collector current ICP 5 A 3: Base
MT-3-A1 Package
Collector power dissipation PC 1.5 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 30 mA, IB = 0 60 V
Base-emitter voltage *1 VBE VCE = 4 V, IC = 3 A 1.8 V
Collector-emitter cutoff current (Emitter-base short) ICES VCE = 60 V, VBE = 0 200 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 30 V, IB = 0 300 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 1 mA
Forward current transfer ratio hFE1 *2 VCE = 4 V, IC = 1 A 40 250 
hFE2 *1 VCE = 4 V, IC = 3 A 10
Collector-emitter saturation voltage *1 VCE(sat) IC = 3 A, IB = 0.375 A 1.2 V
Transition frequency fT VCE = 5 V, IE = − 0.1 A, f = 200 MHz 220 MHz
Turn-on time ton IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A 0.5 µs
Storage time tstg 2.5 µs
Fall time tf 0.4 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank P Q R
hFE1 40 to 90 70 to 150 120 to 250

Publication date: September 2003 SJD00246BED 1

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2SD2136

PC  Ta IC  VCE IC  VBE
2.0 5 8
Without heat sink TC=25˚C VCE=4V
Collector power dissipation PC (W)

1.6 4 25˚C
IB=100mA 6

Collector current IC (A)

Collector current IC (A)

90mA TC=100˚C –25˚C
80mA
1.2 3 70mA
60mA
50mA
4
40mA
0.8 2 30mA

20mA
2
0.4 1
10mA

0 0 0
0 40 80 120 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 2.4
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)

VCE(sat)  IC hFE  IC fT  I C
100 104 300
Collector-emitter saturation voltage VCE(sat) (V)

IC/IB=8 VCE=4V VCB=10V

f=200MHz
TC=25˚C
250
Forward current transfer ratio hFE

Transition frequency fT (MHz)

10 103
200
TC=100˚C TC=100˚C 25˚C
25˚C
1 102 150
–25˚C

–25˚C
100
0.1 10
50

0.01 1 0
0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10
Collector current IC (A) Collector current IC (A) Collector current IC (A)

Safe operation area Rth  t

100 104
Single pulse Without heat sink
TC=25˚C
Thermal resistance Rth (°C/W)

103
10
Collector current IC (A)

ICP
t=100ms
IC 102
t=1s
1

10
t=10ms

0.1
1

0.01 10−1
0.1 1 10 100 10−4 10−3 10−2 10−1 1 10 102 103 104
Collector-emitter voltage VCE (V) Time t (s)

2 SJD00246BED
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic
equipment (such as office equipment, communications equipment, measuring instruments and household
appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion
equipment, life support systems and safety devices) in which exceptional quality and reliability are re-
quired, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications
satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating,
the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be
liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as
redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physi-
cal injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.

2003 SEP

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