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Almia, Francis M.
Roots of Equation
8.31 The resistivity ρ of doped silicon is based on the charge q on an electron, the electron
density n, and the electron mobility μ. The electron density is given in terms of the doping density
N and the intrinsic carrier density n_i . The electron mobility is described by the temperature T,
the reference temperature T_0, and the reference mobility μ_0. The equations required to
compute the resistivity are
𝜌=1/𝑞𝑛𝜇
Where
𝑛=1/2 (𝑁+√(𝑁^2+4𝑛_𝑖^2 )) 𝑎𝑛𝑑 𝜇=𝜇_0 (𝑇/𝑇_( 0) )^(−2.42)
Determine N, given
𝜌=6 𝑥 〖 10 〗 ^6 𝑉 𝑠 𝑐𝑚/𝐶
𝑀(𝑥)=−10[〈𝑥−0〉^2−〈𝑥−5〉^2 ]+15〈𝑥−8〉^1+150〈𝑥−7〉^0+57𝑥
𝜌=1/𝑞𝑛𝜇→𝑛=1/𝑞𝜌𝜇
𝑛=1.476284958 ∗ 〖 10 〗 ^10 𝑐𝑚
mputation Solution
(3) Computing for electron density f(N):
thus we estimate the root to be at 𝑵 =𝟏.𝟐𝟏𝟓 〖𝒙𝟏𝟎〗 ^𝟏𝟎at 16 Iterations at tolerance err
where:
also, let's say that
𝑚〗 ^(−6) )]
𝝐_(𝒓𝒆 𝒍)=|𝑵_(𝒊+𝟏)−𝑵_𝒊 |/𝑵_(𝒊+𝟏) ∗𝟏𝟎𝟎%
𝑵_𝒖=𝒖𝒑𝒑𝒆𝒓 𝒃𝒓𝒂𝒄𝒌𝒆𝒕
𝝐_𝒔=𝟎.𝟎𝟎𝟏% 𝒐𝒓 𝟎.𝟎𝟎𝟎𝟎𝟏
𝑵_𝒍 =𝒍𝒐𝒘𝒆𝒓 𝒃𝒓𝒂𝒄𝒌𝒆𝒕
〗 ^(−6) )]
𝜌=1/𝑞𝑛𝜇→𝑛=1/𝑞𝜌𝜇
𝑛=1.476284958 ∗ 〖 10 〗 ^10 𝑐𝑚
Computation Solution
(3) Computing for electron density f(N):
𝛿=1
thus we estimate the root to be at𝑵 =𝟏.𝟐𝟏𝟓 〖𝒙𝟏𝟎〗 ^𝟏𝟎 at 7 Iterations at tolerance er
where:
also, let's say that
𝑚〗 ^(−6) )]
𝝐_(𝒓𝒆 𝒍)=|𝑵_(𝒊+𝟏)−𝑵_𝒊 |/𝑵_(𝒊+𝟏) ∗𝟏𝟎𝟎%
𝝐_𝒔=𝟎.𝟎𝟎𝟏% 𝒐𝒓 𝟎.𝟎𝟎𝟎𝟎𝟏
𝝐_(𝒓𝒆 𝒍)
0.934839282560536 where:
0.240321973438377
0.017103454542571
𝑁_(𝑖+1)=𝑁_𝑖−(𝛿𝑁_𝑖 𝑓(𝑁_𝑖))/(𝑓(𝑁_𝑖+𝛿𝑁_𝑖 )−𝑓(𝑁_𝑖))
0.001113319379002
7.16498715764329E-05
4.60760894103416E-06
2.9628806661919E-07