Varactor

A varactor diode uses a p-n junction in reverse bias and has a structure such
that the capacitance of the diode varies with the reverse voltage. A voltage
controlled capacitance is useful for tuning applications.

The capacitance is controlled by the method of doping in the depletion layer.

Typical values are from tens to hundreds of picofarads.

Varactor Tuner

A popular application of the varactor is in electronic tuning circuits, as in television tuners. The DC
control voltage varies the capacitance of the varactor, retuning the resonant circuit.

Tunnel Diode

The tunnel diode has a region in its voltage current characteristic where the
current decreases with increased forward voltage, known as its negative resistance
region. This characteristic makes the tunnel diode useful in oscillators and as a
microwave amplifier.

Tunnel Diode Oscillator

The negative resistance region of the tunnel diode makes oscillator

action possible. The unijunction transistor has a similar oscillator
application.
A Gunn diode, also known as a transferred electron device (TED), is a form of diode, a semiconductor
electronic component, used in high-frequency electronics. Its internal construction is unlike other diodes
in that it consists only of N-doped semiconductor material, whereas most diodes consist of both P and
N-doped regions. In the Gunn diode, three regions exist: two of them are heavily N-doped on each
terminal, with a thin layer of lightly doped material in between. When a voltage is applied to the device,
the electrical gradient will be largest across the thin middle layer. Conduction will take place as in any
conductive material with current being proportional to the applied voltage. Eventually, at higher field
values, the conductive properties of the middle layer will be altered, increasing its resistivity, preventing
further conduction and current starts to fall. This means a Gunn diode has a region of negative
differential resistance. Its largest use is in electronic oscillators to generate microwaves, in applications
such as radar speed guns and microwave relay transmitters.

IMPATT diode , IMPact ionisation Avalanche Transit Time microwave diode is used for many microwave
RF applications where it is one of the highest power microwave diodes.

IMPATT diodes are ideal where small cost effective microwave radio sources are needed. The main
drawback of generators using IMPATT diodes is the high level of phase noise they generate. This results
from the statistical nature of the avalanche process that is key to their operation. Nevertheless these
diodes make excellent signal sources for many RF microwave applications.

Typically the device is used in a number of applications including:

•Alarms

•Radar

•Detectors using RF technology