Module: Fundamentals of Analog Electronics Module Number: ENRE213

th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

German-Jordanian University
School of Applied Natural Sciences -
Energy Engineering

Bipolar Junction Transistor

Configurations:
Common Base Configuration

Fig. 3.2 Types of transistors: (a) pnp; (b) npn.

Fig. 3.6 Notation and symbols used with the
common-base configuration: npn transistor.

Fig. 3.8 Output or collector characteristics for a common-base transistor amplifier.

Lecturer: Dr. Omar Daoud ١

Module: Fundamentals of Analog Electronics Module Number: ENRE213
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Common Emitter Configuration

Fig. 3.13 Notation and symbols used with the

common-emitter configuration: npn transistor

Fig. 3.14 Characteristics of a silicon transistor in the common-emitter configuration: (a) collector characteristics; (b)
base characteristics.

Common Collector Configuration

Fig. 3.20 Notation and symbols used with the common-collector

configuration: (a) pnp transistor; (b) npn transistor.

Lecturer: Dr. Omar Daoud ٢

Module: Fundamentals of Analog Electronics Module Number: ENRE213
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Operating Point

Fig. 4.1 Various operating points within the limits of operation of a transistor.

Fixed Bias Circuit

Fig. 4.2 Fixed-bias circuit.

Fig. 4.3 DC equivalent of Fig. 4.2.

Lecturer: Dr. Omar Daoud ٣
 Module: Fundamentals of Analog Electronics Module Number: ENRE213
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Fig. 4.5 Collector–emitter loop.

Fig. 4.4 Base–emitter loop.

Fig. 4.7 DC fixed-bias circuit for Example 4.1.

Fig. 4.9 Determining ICsat. Fig. 4.10 Determining ICsat for the fixed-bias configuration.

Lecturer: Dr. Omar Daoud ٤

 Module: Fundamentals of Analog Electronics Module Number: ENRE213
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Emitter Bias

Fig. 4.18 Base–emitter loop.

Fig. 4.17 BJT bias circuit with emitter resistor.

Fig. 4.19 Network derived from the result of Fig. Fig. 4.20 Reflected impedance level of RE.
4.18

Fig. 4.21 Collector–emitter loop.

Lecturer: Dr. Omar Daoud ٥

Module: Fundamentals of Analog Electronics Module Number: ENRE213
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Design Operation

Fig. 4.48 Example 4.19. Fig. 4.49 Example 4.20.

Transistor Switching Network

Saturation conditions and the

resulting terminal resistance.

Cutoff conditions and the

resulting terminal resistance.

Fig. 4.53 Transistor inverter.

Lecturer: Dr. Omar Daoud ٦

Module: Fundamentals of Analog Electronics Module Number: ENRE213
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Fig. 4.56 Inverter for Example 4.24.

Fig. 4.57 Defining the time intervals of a pulse waveform.

Lecturer: Dr. Omar Daoud ٧

Module: Fundamentals of Analog Electronics Module Number: ENRE213
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

German-Jordanian University
School of Applied Natural Sciences -
Energy Engineering

Bipolar Junction Transistor

AC Analysis:
• A model is an equivalent circuit that represents the AC characteristics of the
transistor.
• A model uses circuit elements that approximate the behavior of the transistor.
• There are two models commonly used in small signal AC analysis of a
transistor:
– re model
– Hybrid equivalent model

The re Transistor Model:

BJTs are basically current-controlled devices, therefore the re model uses a diode and a
current source to duplicate the behavior of the transistor. One disadvantage to this model is its
sensitivity to the DC level. This model is designed for specific circuit conditions.

Common Base Configuration

Fig. 5.6 (a) Common-base BJT transistor; (b) re model for the configuration of (a).

Fig. 5.9 Defining Av = Vo/Vi for the common-

Fig. 5.7 Common-base re equivalent circuit. base configuration.

Lecturer: Dr. Omar Daoud ٨

Module: Fundamentals of Analog Electronics Module Number: ENRE213
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Common Emitter Configuration

Fig. 5.11 (a) Common-emitter BJT transistor; (b) approximate model for the configuration of a).

Fig. 5.16 Determining the voltage and current gain for the
Fig. 5.12 Determining Zi using the approximate common-emitter transistor amplifier.

Fig. 5.17 re model for the common-emitter transistor

configuration.

Common Collector Configuration

Use the common-emitter model for the common-collector configuration.

Lecturer: Dr. Omar Daoud ٩

Module: Fundamentals of Analog Electronics Module Number: ENRE213
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

The Hybrid Equivalent Model:

The following hybrid parameters are developed and used for modeling the transistor.
These parameters can be found in a specification sheet for a transistor:
• hi = input resistance
• hr = reverse transfer voltage ratio (Vi/Vo)  0
• hf = forward transfer current ratio (Io/Ii)
• ho = output conductance  

Fig. 5.22 Complete hybrid equivalent circuit.

Fig. 5.23 Common-emitter configuration: (a) graphical symbol; (b) hybrid equivalent
circuit

Fig. 5.24 Common-base configuration: (a) graphical symbol; (b) hybrid equivalent
circuit.

Lecturer: Dr. Omar Daoud ١٠

 Module: Fundamentals of Analog Electronics Module Number: ENRE213
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Fig. 5.25 Effect of removing hre and hoe from the hybird equivalent circuit.

Fig. 5.26 Approximate hybrid equivalent model.

Common-Emitter re vs. h-Parameter Model

Fig. 5.27 Hybrid versus re model: (a) common-emitter configuration; (b) common-base configuration.

Lecturer: Dr. Omar Daoud ١١

 Module: Fundamentals of Analog Electronics Module Number: ENRE213
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

German-Jordanian University
School of Applied Natural Sciences -
Energy Engineering

BJT Amplifier Circuits:

Common Emitter Configurations:
Common Emitter Fixed-bias
• The input is applied to the base Vo (R || r )
Av   C o
• The output is from the collector Vi re
• High input impedance
• Low output impedance RC
Av   r 10R
• High voltage and current gain re o C
I R B ro
• Phase shift between input and output is 180 Ai  o 
I i (ro  R C )(R B   re )
Ai   ro 10R C , R B 10  re

Zi
A i  A v
RC

Fig. 5.36 Substituting the re model into the network of Fig.

5.35.
Fig. 5.34 Common-emitter fixed-bias configuration.

Fig. 5.35 Network of Fig. 5.34 following the removal

of the effects of VCC, C1 and C2. Fig. 5.37Determining Zo for the network of Fig. 5.36.

Lecturer: Dr. Omar Daoud ١٢

 Module: Fundamentals of Analog Electronics Module Number: ENRE213
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Common Emitter Voltage-divider Bias

Fig. 5.38 Demonstrating the 180° phase shift between input and output Fig. 5.39 Example 5.4.
waveforms.

Vo  R C || ro
Av  
Vi re
Vo R
Av    C ro 10R C
Vi re
I R ro
Ai  o 
I i (ro  R C )(R    re )
I R 
Ai  o  r 10R
I i R    re o C
Io
Ai    ro 10R C , R 10 re
Ii
Z
A i  A v i
RC Fig. 5.40 Voltage-divider bias configuration.

Fig. 5.41Substituting the re equivalent circuit into the ac equivalent network of Fig. 5.40.

Lecturer: Dr. Omar Daoud ١٣

 Module: Fundamentals of Analog Electronics Module Number: ENRE213
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Fig. 5.42 Example 5.5.

Common Emitter Bias

Fig. 5.43 CE emitter-bias configuration.

Fig. 5.46 Example 5.6.

Lecturer: Dr. Omar Daoud ١٤

 Module: Fundamentals of Analog Electronics Module Number: ENRE213
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Vo R C
Av  
Vi Zb
Vo RC
Av   Z b   (re  R E )
Vi re  R E
Vo R
Av    C Z b  R E
Vi RE
I R B
Ai  o 
Ii R B  Zb
Z
A i  A v i
RC

Fig. 5.44 Substituting the re equivalent circuit into the ac equivalent

network of Fig. 5.43.

Fig. 5.46 Example 5.6.

Common Base Configuration

• The input is applied to the emitter.
• The output is taken from the collector.
• Low input impedance.
• High output impedance.
• Current gain less than unity.
• Very high voltage gain.
• No phase shift between input and output.

Lecturer: Dr. Omar Daoud ١٥

Module: Fundamentals of Analog Electronics Module Number: ENRE213
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Vo R C R C
Av   
Vi re re
I
A i  o    1
Ii
Fig. 5.57 Common-base configuration.

Fig. 5.58 Substituting the re equivalent circuit into the ac equivalent network of Fig. 5.57.

Fig. 5.59 Example 5.11.

Lecturer: Dr. Omar Daoud ١٦

Module: Fundamentals of Analog Electronics Module Number: ENRE213
th
Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud ١٧