FII 50-12E

NPT3 IGBT phaseleg IC25 = 50 A

in ISOPLUS i4-PACTM VCES = 1200 V
VCE(sat) typ. = 2.0 V

4
1

1
5
2

IGBTs Features
• NPT3 IGBT
Symbol Conditions Maximum Ratings - low saturation voltage
VCES TVJ = 25°C to 150°C 1200 V - positive temperature coefficient for
easy paralleling
VGES ± 20 V - fast switching
- short tail current for optimized
IC25 TC = 25°C 50 A
performance in resonant circuits
IC90 TC = 90°C 32 A
• HiPerFREDTM diode
ICM VGE = ±15 V; RG = 39 Ω; TVJ = 125°C 50 A - fast reverse recovery
VCEK RBSOA, Clamped inductive load; L = 100 µH VCES - low operating forward voltage
- low leakage current
tSC VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C 10 µs • ISOPLUS i4-PACTM package
(SCSOA) non-repetitive - isolated back surface
Ptot TC = 25°C 200 W - enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
Symbol Conditions Characteristic Values
- industry standard outline
(TVJ = 25°C, unless otherwise specified)
- UL registered, E 72873
min. typ. max.
VCE(sat) IC = 30 A; VGE = 15 V; TVJ = 25°C 2.0 2.6 V Applications
TVJ = 125°C 2.3 V • single phaseleg
VGE(th) IC = 1 mA; VGE = VCE 4.5 6.5 V - buck-boost chopper
• H bridge
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C 0.4 mA - power supplies
TVJ = 125°C 0.4 mA - induction heating
- four quadrant DC drives
IGES VCE = 0 V; VGE = ± 20 V 200 nA
- controlled rectifier
td(on) 85 ns • three phase bridge
tr 50 ns - AC drives
Inductive load, TVJ = 125°C - controlled rectifier
td(off) 440 ns
VCE = 600 V; IC = 30 A
tf 50 ns
VGE = ±15 V; RG = 39 Ω
Eon 4.6 mJ
Eoff 2.2 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 2 nF
QGon VCE = 600 V; VGE = 15 V; IC = 30 A 250 nC
RthJC 0.6 K/W
RthJH with heatsink compound 1.2 K/W
320

© 2003 IXYS All rights reserved 1-4

IXYS Semiconductor GmbH IXYS Corporation
Edisonstr. 15, D-68623 Lampertheim 3540 Bassett Street, Santa Clara CA 95054
Phone: +49-6206-503-0, Fax: +49-6206-503627 Phone: (408) 982-0700, Fax: 408-496-0670
 FII 50-12E

Diodes Equivalent Circuits for Simulation

Symbol Conditions Maximum Ratings Conduction

IF25 TC = 25°C 48 A
IF90 TC = 90°C 25 A

Symbol Conditions Characteristic Values

IGBT (typ. at VGE = 15 V; TJ = 125°C)
min. typ. max.
V0 = 0.95 V; R0 = 45 mΩ
VF IF = 30 A; TVJ = 25°C 2.4 2.8 V
Diode (typ. at TJ = 125°C)
TVJ = 125°C 1.8 V
V0 = 1.26V; R0 = 15 mΩ
IRM 51 A
IF = 30 A; diF/dt = -1100 A/µs; TVJ = 125°C Thermal Response
t rr 180 ns
VR = 600 V; VGE = 0 V
Erec(off) 1.8 mJ
RthJC (per diode) 1.3 K/W
RthJS 1.6 K/W

Component IGBT
Cth1 = 0.067 J/K; Rth1 = 0.108 K/W
Symbol Conditions Maximum Ratings Cth2 = 0.175 J/K; Rth2 = 0.491 K/W
TVJ -55...+150 °C Diode
Tstg -55...+125 °C Cth1 = 0.039 J/K; Rth1 = 0.337 K/W
Cth2 = 0.090 J/K; Rth2 = 0.963 K/W
VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~
FC mounting force with clip 20...120 N

Symbol Conditions Characteristic Values

min. typ. max.
dS,dA pin - pin 1.7 mm
dS,dA pin - backside metal 5.5 mm Dimensions in mm (1 mm = 0.0394")
Weight 9 g

320

© 2003 IXYS All rights reserved 2-4

 FII 50-12E

120 120
VGE = 17 V VGE = 17 V
A 15 V A 15 V
100 100
IC IC
13 V
80 80 13 V

60 60
11 V 11 V
40 40

9V 9V
20 20
TVJ = 25°C TVJ = 125°C
0 0
0 1 2 3 4 5 6 V 7 0 1 2 3 4 5 6 V 7
VCE VCE

Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics

120 90
A VCE = 20 V A
100 75
IF
IC
80 60

60 45
TVJ = 125°C TVJ = 25°C
40 30
TVJ = 125°C
20 15
TVJ = 25°C
0 0
4 6 8 10 12 14 V 16 0 1 2 3 V 4
VGE VF

Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of

free wheeling diode

20 10

V K/W diode
1
15 ZthJC
VGE IGBT
0.1
10
0.01

5 single pulse
VCE = 600 V 0.001
IC = 35 A
MUBW3512E7
0 0.0001
0 40 80 120 160nC 200 0.001 0.01 0.1 1 s 10
QG t

Fig. 5 Typ. turn on gate charge Fig. 6 Typ. transient thermal impedance
320

© 2003 IXYS All rights reserved 3-4

 FII 50-12E

20 100 6 1200
td(on) ns V CE = 600 V ns
mJ 90 Eoff
mJ V GE = ±15 V 1000
16 80 RG = 39 Ω
Eon 70 Eoff T VJ = 125°C
t 4 800 t
12 60
tr
V CE = 600 V 50 600
8 V GE = ±15 V 40 td(off)
Eon RG = 39 Ω 2 400
30
T VJ = 125°C
4 20
Erec(off) 200
10
tf
0 0 0 0
0 20 40 60 A 80 0 20 40 60 A 80
IC IC

Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
8 160 4 800
V CE = 600 V V CE = 600 V
mJ V GE = ±15 V ns mJ V GE = ±15 V ns
Eon
IC = 35 A IC = 35 A
Eon 6 120 Eoff 3 600
T VJ = 125°C t TVJ = 125°C t

td(on) Eoff
4 80 2 400

td(off)
tr
2 40 1 200
Erec(off)
tf
0 0 0 0
10 20 30 40 50 60 70 Ω 80 10 20 30 40 50 60 70 Ω 80
RG RG

Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor

70 350 12

TVJ = 125°C
RG=
60 IF = 30 A IRM 300
10
TVJ = 125°C 24Ω
15Ω
70A
VR = 600 V VR = 600 V 39Ω
56Ω
50 250
8 75Ω 50A
RG=

40 200
35A
trr [ns]

Qrr [µC]
I RM [A]

t RR 6
30 150
IF =

4 15A
20 100

7,5A
10 50 2

0 0 0
0 200 400 600 800 1000 1200 1400 1600 1800 0 200 400 600 800 1000 1200 1400 1600 1800
-di F /dt [A/µs] -diF /dt [A/µs]

Fig. 11 Typ. turn off characteristics Fig. 12 Typ. turn off characteristics
of free wheeling diode of free wheeling diode
320

© 2003 IXYS All rights reserved 4-4