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datasheet
MiniSKiiP®PIM 2 1200 V / 35 A
● Solderless interconnection
● Trench Fieldstop IGBT4 technology
Schematic
Target applications
● Industrial Drives
Types
● V23990-K220-A40
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Inverter Switch
Collector-emitter voltage VCES 1200 V
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Inverter Diode
Peak repetitive reverse voltage VRRM 1200 V
Brake Switch
Collector-emitter voltage VCES 1200 V
Brake Diode
Peak repetitive reverse voltage VRRM 1200 V
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Rectifier Diode
Peak repetitive reverse voltage VRRM 1600 V
Module Properties
Thermal Properties
Isolation Properties
Characteristic Values
Inverter Switch
Static
Gate-emitter threshold voltage VGE(th) VGE = VCE 0,0012 25 5,3 5,8 6,3 V
Thermal
Dynamic
25 311
Turn-on delay time td(on) 125 298
150 294
25 131
Rise time tr 125 140
Rgon = 16 Ω 150 140
ns
Rgoff = 16 Ω 25 208
Turn-off delay time td(off) 125 269
150 286
±15 600 35 25 73
Fall time tf 125 136
150 150
QrFWD = 2 μC 25 3,87
Turn-on energy (per pulse) Eon QrFWD = 4,2 μC 125 5,27
QrFWD = 5,2 μC 150 5,86
25 1,94 mWs
Characteristic Values
Inverter Diode
Static
25 2,37 2,62
Forward voltage VF 35 V
150 2,35
25 60
Reverse leakage current IR 1200 µA
150 5500
Thermal
Dynamic
25 12
Peak recovery current IRRM 125 16 A
150 17
25 344
Reverse recovery time trr 125 514 ns
150 625
di/dt = 213 A/μs 25 2,01
Recovered charge Qr di/dt = 196 A/μs ±15 600 35 125 4,21 μC
di/dt = 223 A/μs 150 5,25
25 0,76
Reverse recovered energy Erec 125 1,66 mWs
150 2,07
25 126
Peak rate of fall of recovery current (dirf/dt)max 125 64 A/µs
150 65
Characteristic Values
Brake Switch
Static
Gate-emitter threshold voltage VGE(th) VGE = VCE 0,0012 25 5,3 5,8 6,3 V
Thermal
Dynamic
25 134
Turn-on delay time td(on) 125 179
150 117
25 128
Rise time tr 125 139
Rgon = 16 Ω 150 136
ns
Rgoff = 16 Ω 25 368
Turn-off delay time td(off) 125 330
150 444
-5 / 15 600 35 25 51
Fall time tf 125 138
150 151
QrFWD = 1,9 μC 25 3,69
Turn-on energy (per pulse) Eon QrFWD = 4 μC 125 5,17
QrFWD = 5,2 μC 150 5,64
25 2,20 mWs
Characteristic Values
Brake Diode
Static
25 2,37 2,62
Forward voltage VF 35 V
150 2,35
25 60
Reverse leakage current IR 1200 µA
150 5500
Thermal
Dynamic
25 12
Peak recovery current IRRM 125 16 A
150 18
25 343
Reverse recovery time trr 125 515 ns
150 609
di/dt = 245 A/μs 25 1,89
Recovered charge Qr di/dt = 221 A/μs -5 / 15 600 35 125 4,03 μC
di/dt = 206 A/μs 150 5,23
25 0,72
Reverse recovered energy Erec 125 1,59 mWs
150 2,09
25 134
Peak rate of fall of recovery current (dirf/dt)max 125 65 A/µs
150 66
Rectifier Diode
Static
25 1,17
Forward voltage VF 35 V
125 1,13
Thermal
Characteristic Values
Thermistor
Rated resistance R 25 1 kΩ
I C (A)
I C (A)
7V
8V
9V
10 V
90 90 11 V
12 V
13 V
14 V
15 V
16 V
17 V
60 60
30 30
0 0
0 1 2 3 4 5 0 1 2 3 4 5
V C E (V) V C E (V)
tp = 250 μs 25 °C tp = 250 μs
T j:
V GE = 15 V 150 °C Tj = 150 °C
V GE from 7 V to 17 V in steps of 1 V
Z t h( j-s)(K/W)
IC
30
25
10-1
20
15
0,5
10-2
0,2
10 0,1
0,05
0,02
5 0,01
0,005
0 10-3
0 2 4 6 8 10 12 10-5 10-4 10-3 10-2 10-1 100 101 102
V G E (V) t p (s)
tp = 100 μs 25 °C D = tp / T
T j:
V CE = 10 V 150 °C R th(j-s) = 0,71 K/W
IGBT thermal model values
R (K/W) τ (s)
2,63E-02 5,27E+00
4,93E-02 4,49E-01
1,31E-01 8,01E-02
3,79E-01 2,68E-02
7,06E-02 5,21E-03
4,74E-02 8,00E-04
3,27E-03 3,86E-04
I C = f(V CE)
1000
I C (A)
10
0,1
0,01
1 10 100 1000 10000
V C E (V)
D = single pulse
Ts = 80 ºC
V GE = ±15 V
Tj = T jmax
Z t h(j-s) (K/W)
90
75
100
60
45
0,5
10-1
0,2
30 0,1
0,05
0,02
15 0,01
0,005
0
0 10-2
0 1 2 3 4 5 10-4 10-3 10-2 10-1 100 101 102
VF (V) t p (s)
tp = 250 μs 25 °C D = tp / T
T j:
150 °C R th(j-s) = 0,96 K/W
FWD thermal model values
R (K/W) τ (s)
3,58E-02 7,17E+00
6,71E-02 6,11E-01
1,78E-01 1,09E-01
5,16E-01 3,64E-02
9,61E-02 7,09E-03
6,45E-02 1,09E-03
4,45E-03 5,25E-04
I C (A)
I C (A)
7V
8V
9V
10 V
90 90 11 V
12 V
13 V
14 V
15 V
16 V
17 V
60 60
30 30
0 0
0 1 2 3 4 5 0 1 2 3 4 5
V C E (V) V C E (V)
tp = 250 μs 25 °C tp = 250 μs
T j:
V GE = 15 V 150 °C Tj = 150 °C
V GE from 7 V to 17 V in steps of 1 V
Z t h( j-s)(K/W)
IC
30
25
10-1
20
15
0,5
10-2
0,2
10 0,1
0,05
0,02
5 0,01
0,005
0 10-3
0 2 4 6 8 10 12 10-5 10-4 10-3 10-2 10-1 100 101 102
V G E (V) t p (s)
tp = 100 μs 25 °C D = tp / T
T j:
V CE = 10 V 150 °C R th(j-s) = 0,71 K/W
IGBT thermal model values
R (K/W) τ (s)
2,63E-02 5,27E+00
4,93E-02 4,49E-01
1,31E-01 8,01E-02
3,79E-01 2,68E-02
7,06E-02 5,21E-03
4,74E-02 8,00E-04
3,27E-03 3,86E-04
I C = f(V CE)
1000
I C (A)
10
0,1
0,01
1 10 100 1000 10000
V C E (V)
D = single pulse
Ts = 80 ºC
V GE = ±15 V
Tj = T jmax
Z t h(j-s) (K/W)
90
75
100
60
45
0,5
10-1
0,2
30 0,1
0,05
0,02
15 0,01
0,005
0
0 10-2
0 1 2 3 4 5 10-4 10-3 10-2 10-1 100 101 102
VF (V) t p (s)
tp = 250 μs 25 °C D = tp / T
T j:
150 °C R th(j-s) = 0,96 K/W
FWD thermal model values
R (K/W) τ (s)
3,58E-02 7,17E+00
6,71E-02 6,11E-01
1,78E-01 1,09E-01
5,16E-01 3,64E-02
9,61E-02 7,09E-03
6,45E-02 1,09E-03
4,45E-03 5,25E-04
Z t h(j-s) (K/W)
70
60
100
50
40
30 0,5
10-1
0,2
0,1
20
0,05
0,02
10 0,01
0,005
0
0 10-2
0 0,25 0,5 0,75 1 1,25 1,5 1,75 2 10-4 10-3 10-2 10-1 100 101 102
VF (V) t p (s)
tp = 250 μs 25 °C D = tp / T
T j:
125 °C R th(j-s) = 1,10 K/W
Diode thermal model values
R (K/W) τ (s)
1,03E-01 7,04E+00
1,17E-01 3,94E-01
5,19E-01 5,87E-02
2,38E-01 2,15E-02
7,64E-02 3,49E-03
4,71E-02 6,93E-04
Thermistor Characteristics
figure 1. Thermistor Typical Thermistor resistance values
Typical PTC characteristic
as a function of temperature
R = f(T )
PTC-typical temperature characteristic
2000
R (Ω)
1500
1000
500
0
25 50 75 100 125
T (°C)
E = f(I C) E = f(R g)
17,5 15
E (mWs)
E (mWs)
Eon
15
12,5
Eon
Eo n
12,5
Eon 10
Eo n
10
Eo n
7,5
7,5
Eoff
5
5
Eoff Eoff
Eoff
Eo ff 2,5
2,5
Eo ff
0 0
0 15 30 45 60 75 0 15 30 45 60 75
T j: I C (A) R g ( Ω)
Erec
2,5 2,5
Erec
2 2
1,5 1,5
Erec
Erec
Erec
1 1
Erec
0,5 0,5
0 0
0 15 30 45 60 75 0 15 30 45 60 75
I C (A) R g ( Ω)
With an induc tive load at 25 °C With an inductive load at 25 °C
V CE = 600 V T j: 125 °C V CE = 600 V T j: 125 °C
V GE = ±15 V 150 °C V GE = ±15 V 150 °C
R gon = 16 Ω IC= 35 A
t = f(I C) t = f(R g)
10 10
t (μs)
t ( μs)
td(on)
1 1
td(off ) td(off )
tr
td(on)
tf
0,1
tf
0,1
tr
0,01 0,01
0 10 20 30 40 50 60 70 0 15 30 45 60 75
I C (A) R g (Ω)
trr
rr
trr
t
0,8 0,8
trr
trr
0,6 0,6
trr
trr
0,4 0,4
0,2 0,2
0 0
0 15 30 45 60 75 0 15 30 45 60 75
I C (A) R g on (Ω)
At V CE= 600 V 25 °C At V CE = 600 V 25 °C
V GE = ±15 V T j: 125 °C V GE = ±15 V T j: 125 °C
R gon = 16 Ω 150 °C IC= 35 A 150 °C
Q r (µC)
Qr
5
6 Qr
Qr
4
Qr
4 3
Qr
2
2
Qr
0 0
At
0 15 30 45 60 75 0 15 30 45 60 75
I C (A) R g on (Ω)
At V CE = 600 V 25 °C At VCE= 600 V 25 °C
V GE = ±15 V T j: 125 °C V GE = ±15 V T j: 125 °C
R gon = 16 Ω 150 °C I C= 35 A 150 °C
I R M (A)
IRM
I RM
15 30
IRM
10 20
5 10 I RM
I RM
IR M
0 0
0 15 30 45 60 75 0 15 30 45 60 75
I C (A) R g o n (Ω)
At V CE = 600 V 25 °C At V CE = 600 V 25 °C
V GE = ±15 V T j: 125 °C V GE = ±15 V T j: 125 °C
R gon = 16 Ω 150 °C IC= 35 A 150 °C
d i /d t (A/µs)
d i /d t (A/µs)
diF / dt diF / dt
di r r /dt di r r /dt
300 600
225 450
150 300
75 150
0 0
0 15 30 45 60 75 0 15 30 45 60 75
I C (A) R g o n (Ω)
At V CE = 600 V 25 °C At V CE = 600 V 25 °C
V GE = ±15 V T j: 125 °C V GE = ±15 V T j: 125 °C
R gon = 16 Ω 150 °C I C= 35 A 150 °C
I C = f(V CE)
80
I C (A)
I C MAX
I c CHIP
60
M ODULE
40
Ic
20
V CE MAX
0
0 300 600 900 1200 1500
V C E (V)
At
Tj = 175 °C
R gon = 16 Ω
R goff = 16 Ω
% tdoff %
tEoff tdon
IC 1%
VCE VGE 10% IC 10% VCE 3%
tEon
t (µs) t (µs)
V GE (0%) = -15 V V GE (0%) = -15 V
V GE (100%) = 15 V V GE (100%) = 15 V
V C (100%) = 600 V V C (100%) = 600 V
I C (100%) = 35 A I C (100%) = 35 A
t doff = 269 ns t don = 298 ns
% fitted %
IC
IC 90% IC
IC 60%
VCE
IC 40% IC 90%
tr
IC10%
VCE
IC 10%
tf
t ( µs) t (µs)
V C (100%) = 600 V V C (100%) = 600 V
I C (100%) = 35 A I C (100%) = 35 A
tf= 136 ns tr = 140 ns
% % Qr
trr tQr
fitted IF IF
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs) t (µs)
E = f(I C) E = f(R g)
16 16
E (mWs)
E (mWs)
Eo n
Eon Eon
12 12
Eon
Eo n Eo n
8 8
Eoff
Eoff Eoff
4 Eo ff 4
Eoff
Eo ff
0 0
0 15 30 45 60 75 0 15 30 45 60 75
I C (A) R g ( Ω)
Erec
2,5 2,5
Erec
2 2
0,5 0,5
Erec
0 0
0 15 30 45 60 75 0 15 30 45 60 75
I C (A) R g ( Ω)
With an induc tive load at 25 °C With an inductive load at 25 °C
V CE = 600 V T j: 125 °C V CE = 600 V T j: 125 °C
V GE = -5 / 15 V 150 °C V GE = -5 / 15 V 150 °C
R gon = 16 Ω IC= 35 A
t = f(I C) t = f(R g)
10 10
t (μs)
t ( μs)
1 1
td(off )
td(off ) tr
td(on)
tr
td(on) tf
0,1 tf 0,1
0,01 0,01
0 15 30 45 60 75 0 15 30 45 60 75
I C (A) R g (Ω)
trr trr
0,8 0,8
trr trr
0,6 0,6
trr
trr
0,4 0,4
0,2 0,2
0 0
0 15 30 45 60 75 0 15 30 45 60 75
I C (A) R g on (Ω)
At V CE= 600 V 25 °C At V CE = 600 V 25 °C
V GE = -5 / 15 V T j: 125 °C V GE = -5 / 15 V T j: 125 °C
R gon = 16 Ω 150 °C IC= 35 A 150 °C
Q r (µC)
Qr 5
6
Qr
Qr
4
Qr
4 3
Qr
2
2
Qr
0 0
At
0 15 30 45 60 75 0 15 30 45 60 75
I C (A) R g on (Ω)
At V CE = 600 V 25 °C At VCE= 600 V 25 °C
V GE = -5 / 15 V T j: 125 °C V GE = -5 / 15 V T j: 125 °C
R gon = 16 Ω 150 °C I C= 35 A 150 °C
I R M (A)
IRM 30
I RM
15
25
IRM
20
10
15
10 I RM
5
I RM
5 IR M
0 0
0 15 30 45 60 75 0 15 30 45 60 75
I C (A) R g o n (Ω)
At V CE = 600 V 25 °C At V CE = 600 V 25 °C
V GE = -5 / 15 V T j: 125 °C V GE = -5 / 15 V T j: 125 °C
R gon = 16 Ω 150 °C IC= 35 A 150 °C
d i /d t (A/µs)
d i /d t (A/µs)
diF / dt diF / dt
di r r /dt di r r /dt
300 600
200 400
100 200
0 0
0 15 30 45 60 75 0 15 30 45 60 75
I C (A) R g o n (Ω)
At V CE = 600 V 25 °C At V CE = 600 V 25 °C
V GE = -5 / 15 V T j: 125 °C V GE = -5 / 15 V T j: 125 °C
R gon = 16 Ω 150 °C I C= 35 A 150 °C
I C = f(V CE)
84
I C (A)
I C MAX
70
I c CHIP
56
MODULE
42
Ic
28
14
V CE MAX
0
0 250 500 750 1000 1250 1500
V C E (V)
At
Tj = 175 °C
R gon = 16 Ω
R goff = 16 Ω
% tdoff %
tEoff tdon
IC 1%
VCE VGE 10% IC 10% VCE 3%
tEon
t (µs) t (µs)
V GE (0%) = -5 V V GE (0%) = -5 V
V GE (100%) = 15 V V GE (100%) = 15 V
V C (100%) = 600 V V C (100%) = 600 V
I C (100%) = 35 A I C (100%) = 35 A
t doff = 330 ns t don = 179 ns
% fitted %
IC
IC 90% IC
IC 60%
VCE
IC 40% IC 90%
tr
IC10%
VCE
IC 10%
tf
t ( µs) t (µs)
V C (100%) = 600 V V C (100%) = 600 V
I C (100%) = 35 A I C (100%) = 35 A
tf= 138 ns tr = 139 ns
% % Qr
trr tQr
fitted IF IF
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs) t (µs)
Outline
PCB pad table PCB pad table
Pin X Y Function Pin X Y Function
1 24,38 -21,8 G5 44 Not assembled
2 24,38 -18,6 E5 45 -12,22 -5,8 +DC
3 24,38 -15,4 W 46 -12,22 0,7 +B
4 Not assembled 47 Not assembled
5 24,38 -9 W 48 -12,22 7,1 +B
6 Not assembled 49 Not assembled
7 Not assembled 50 -12,22 15,4 -rect
8 24,38 12,2 G6 51 Not assembled
9 Not assembled 52 -12,22 21,8 -rect
10 24,38 18,6 +T 53 -24,38 -21,8 L3
11 24,38 21,8 -T 54 Not assembled
12 16,58 12,2 G4 55 -24,38 -15,4 L3
13 16,58 15,4 -DC 56 Not assembled
14 Not assembled 57 Not assembled
15 16,58 21,8 -DC 58 Not assembled
16 13,42 -21,8 G3 59 -24,38 -2,5 L2
17 Not assembled 60 Not assembled
18 13,42 -15,4 E3 61 -24,38 3,9 L2
19 13,42 -12,2 V 62 Not assembled
20 Not assembled 63 -24,38 15,4 L1
21 13,42 -5,8 V 64 Not assembled
22 Not assembled 65 -24,38 21,8 L1
23 Not assembled
24 8,38 12,2 G2
25 8,38 15,4 E
26 Not assembled
27 8,38 21,8 -B
28 2,46 -21,8 G1
29 Not assembled
30 2,46 -15,4 E1
31 2,46 -12,2 U
32 Not assembled
33 2,46 -5,8 U
34 0,03 5,8 B
35 0,03 9 B
36 Not assembled
37 Not assembled
38 0,03 18,6 -B
39 0,03 21,8 GB
40 -8,5 -21,8 +rect
41 -8,5 -18,6 +rect
42 Not assembled
43 -8,5 -12,2 +DC
Pad positions refers to center point. For more informations on pad design please see package data
Pinout
Identification
ID Component Voltage Current Function Comment
T1, T2, T3, T4, T5,
IGBT 1200 V 35 A Inverter Switch
T6
D1, D2, D3, D4, D5,
FWD 1200 V 35 A Inverter Diode
D6
T7 IGBT 1200 V 35 A Brake Switch
Packaging instruction
Standard packaging quantity (SPQ) 72 >SPQ Standard <SPQ Sample
Handling instruction
Handling instructions for MiniSkiiP® 2 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 2 packages see vincotech.com website.
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that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
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or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.