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Benjamin Obi Tayo Ph.D. Follow
Jun 19, 2019 · 4 min read
This tutorial is for beginners who are interested in learning how to set up
and run a 4rst-principle calculation based on density functional theory
(DFT). DFT is the most widely used method by quantum chemists,
condensed matter physicists, and material scientists for calculating
important materials properties such as equilibrium geometry, quantum
energy levels, optoelectronic properties, vibrational properties, IR
spectrum, etc.
DFT can be used for both molecular systems (4nite size) or extended
periodic systems like solids. Here we focus on DFT calculations for 1D
periodic systems. As an example, we consider an armchair graphene
nanoribbon (AGNR) with N = 7 dimer lines. To 4nd out about setting up
and running a DFT calculation for a molecule or polymer, see the following:
Tutorial on Density Functional Theory using GAMESS. For DFT studies
for 2D layered materials, see the following: Tutorial on Density
Functional Theory using quantum espresso.
Geometry of armchair GNR with N = 7 dimer lines. The dotted rectangular box indicated the unit cell,
with vacuum added to avoid interaction between edges and planes.
You can download oP-the-shelf input 4les for performing DFT calculations
for 1D systems such as a graphene nanoribbon (GNR) from this repository:
https://github.com/bot13956/Tutorial_DFT_1D_Nanomaterials_Quantum
Espresso.
There are several websites where you can 4nd pseudopotential 4les, for e.g.
http://www.quantum-espresso.org/pseudopotentials.
The 4gure below shows is the band structure of an AGNR with N = 7 dimer
lines. It shows a direct band gap with value of 1.305 eV. If the ions and unit
cell are relaxed using a ‘vc-relax’ calculation before performing a band
structure calculation, an improved band gap of 1.603 eV is obtained.
Geometry and electronic structure of an armchair GNR with N = 7 dimer lines. Notice that the edges are
H-passivated to avoid dangling bonds on edge carbon atoms. Band structure plot shows a direct band
semiconductor with a band gap of 1.305 eV. If the ions and unit cell are relaxed using a ‘vc-relax’
calculation before performing a band structure calculation, an improved band gap of 1.603 eV is
obtained.
References
Band Structure
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