Regn. No.

: 11010

INSTRUCTIONS

1. All of your answers (choices) must appear in the table at the bottom
of this page. You may use any number of additional sheets for your
work, but they will not be graded.

2. Each question has only one correct answer; no question has multiple
answers.

3. Keep your answer sheet legible. Overwriting of choices in the

boxes overleaf will be discarded.

4. Make reasonable approximations and assumptions.

5. Be Careful to include the correct units with your answers when appro-
priate.

MAIN ANSWER SHEET

1. 6. 11. 16.
2. 7. 12. 17.
3. 8. 13. 18.
4. 9. 14. 19.
5. 10. 15. 20.

Contd...

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 IC205 Electron Devices
Cycle Test II
October 21, 2010
Time: 1 hour Marks: 20 × 1 = 20

• Questions 1-10 are based on an abrupt p − n junction in silicon

that has doping densities NA = 1015 and ND = 1016 .

1. The in-built potential across the junction (at 300o K) is

(a) 219 mV (b) 638 mV (c) 0 mV (d) None of these

2. The depletion width (in microns) on the p−side of the diode is

(a) 0.35 (b) 3.5 (c) .035 (d) None of these

3. The depletion width (in microns) on the n−side of the diode is

(a) 0.35 (b) 3.5 (c) .035 (d) None of these

4. Which of the statements is true?

(a) The carrier concentration in the QNR is much smaller than the
doping concentration
(b) The carrier concentration in the SCR is much smaller than the
doping concentration
(c) Doping is uniform throughout the diode
(d) None of these

5. If the diode is reverse bised with a 10V dc, the field (V /cm) developed
across the diode is
(a) −5.4 × 10−4 (b) +5.4 × 104 (c) −5.4 × 104 (d) +5.4 × 10−4

6. In the previous question, the field is developed

(a) across the diode from end to end
(b) between the junction and the metallic contact on the n−side
(c) between the junction and the metallic contact on the p−side
(d) across the SCR

7. Based on the numericals above, how do you classify the junction?

(a) linear (b) asymmetric (c) strongly asymmetric (d) symmetric

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 8. In a strongly asymmetric junction, the highly doped side controls the
electrostatics of the pn junction.
(a) Yes (b) No
(c) Depends on the forward bias
(d) Depends on the reverse bias

9. If the zero-bias capacitance of the diffused junction is 3 pF , the junction

capacitance (in pF) with 10V reverse bias is
(a) 7.358 pF (b) 73.58 pF (c) 0.7358 pF (d) 0.7358 µF

10. In a forward biased diode,

|Jdrift | < |Jdiffusion |

(a) Yes (b) No

(c) Depends on the magnitude of forward bias
(d) Depends on the magnitude of reverse bias

11. In a diode, what limits the magnitude of current?

(a) non-uniform doping
(b) generation and recombination at the surface
(c) width of the SCR
(d) diffusion through QNR

12. A silicon p − n junction diode has a cross-sectional area 4.0 mm2 , and
widths Wn = Wp = 0.15 cm on either side of the junction. Further,
the conductivities of either side are σp = σn = 0.01 (Ω − cm)−1 .
Assuming appropriate mobility and diffusion constants for silicon, the
reverse saturation current at at 300o K is
(a) 8.34µA (b) 83.4pA (c) 7.78µA (d) 77.8pA

13. The junciton capacitance of a diode is 20pF at a reverse bias of 5V .

The decrease in capacitance for a 1V rise in the magnitude of the bias
is
(a) 1.75 pF (b) 18.25 pF (c) 10 pF (d) None of these

14. For what voltage will the reverse saturation current in a p − n junction
diode reach 90% of its saturation value at room temperature?
(a) 60 mV (b) -60 mV (c) 40 mV (d) -40 mV

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15. What is the ratio of the current for a forward bias of 0.05V to the
current for the same magnitude of reverse bias?
(a) 6.87 (b) 68.7 (c) -6.87 (d) -68.7
16. A diode is mounted on a chassis in such a manner that, for each degree
of temperature rise above ambient, 0.1mW is thermally transferred
from the diode to its surroundings. The thermal resistance of the me-
chanical contact between the diode and its surroundings is 0.1mW/o C.
The ambient temperature is 25o C. The diode temperature is not to
be allowed to increase by more than 10o C above the ambient. If the
reverse saturation current is 5.0µA at 25o C, and the reverse saturation
current doubles for every 10o rise in temperature, what is the maximum
reverse bias voltage which may be maintained across the diode?
(a) 10V (b) 25V (c) 50V (d) 100V
17. A p − n junction diode has at a temperature of 125o C a reverse satura-
tion current of 30µA. At a temperature of 125o C what is the dynamic
resistance for a 0.2V bias in the forward direction?
(a) 3.36 mΩ (b) 3.36Ω (c) 3.36 KΩ (d) 3.36 M Ω
18. In the previous question (q.no. 17), what is the dynamic resistance for
a 0.2V bias in the reverse direction?
(a) 0.389 mΩ (b) 0.389Ω (c) 0.389 KΩ (d) 0.389 M Ω
19. Given a forward biased silicon diode with the current I = 1mA, if the
diffusion capacitance is 1µF , what is the diffusion length? (Assume
that the doping of the p−side is much greater than that of the n−side.)
(a) 2.6µm (b) 2.6mm (c) 2.6cm (d) 2.6m
20. For a diode the data sheet mentions that the reverse saturation cur-
rent increases by 0.11/o C. However, you find experimentally that at a
reverse voltage of 10V, the reverse current is 5µA and the temperature
dependence is only 0.07/o C. How do you modify the small signal model
of the diode?
(a) placing a large resistance in parallel with the diode
(b) placing a small resistance in parallel with the diode
(c) placing a small resistance in series with the diode
(d) placing a small capacitance in parallel with the diode

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 IC205 Electron Devices
K E Y for Cycle Test II
Marks: 20 × 1 = 20

1. b

2. b

3. a

4. b

5. c

6. d

7. b

8. b

9. c

10. a

11. d

12. d

13. a

14. b

15. c

16. d

17. b

18. d

19. a

20. a