2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor

January 2009

2SA1943/FJL4215
PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier

Features
• High Current Capability: IC = -17A.
• High Power Dissipation : 150watts. TO-264
1
• High Frequency : 30MHz.
• High Voltage : VCEO= -250V 1.Base 2.Collector 3.Emitter
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SC5200/FJL4315.
• Full thermal and electrical Spice models are available.
• Same transistor is also available in:
-- TO3P package, 2SA1962/FJA4213 : 130 watts
-- TO220 package, FJP1943 : 80 watts
-- TO220F package, FJPF1943 : 50 watts

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

Symbol Parameter Ratings Units

BVCBO Collector-Base Voltage -250 V

BVCEO Collector-Emitter Voltage -250 V

BVEBO Emitter-Base Voltage -5 V

IC Collector Current -17 A

IB Base Current -1.5 A

PD Total Device Dissipation(TC=25°C) 150 W

Derate above 25°C 1.04 W/°C

TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* Ta=25°C unless otherwise noted

Symbol Parameter Max. Units

RθJC Thermal Resistance, Junction to Case 0.83 °C/W
* Device mounted on minimum pad size

hFE Classification
Classification R O
hFE1 55 ~ 110 80 ~ 160

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SA1943/FJL4215 Rev. C 1
 2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
Electrical Characteristics* T =25°C unless otherwise noted
a

Symbol Parameter Test Condition Min. Typ. Max. Units

BVCBO Collector-Base Breakdown Voltage IC=-5mA, IE=0 -250 V

BVCEO Collector-Emitter Breakdown Voltage IC=-10mA, RBE=∞ -250 V

BVEBO Emitter-Base Breakdown Voltage IE=-5mA, IC=0 -5 V

ICBO Collector Cut-off Current VCB=-230V, IE=0 -5.0 µA

IEBO Emitter Cut-off Current VEB=-5V, IC=0 -5.0 µA

hFE1 DC Current Gain VCE=-5V, IC=-1A 55 160

hFE2 DC Current Gain VCE=-5V, IC=-7A 35 60

VCE(sat) Collector-Emitter Saturation Voltage IC=-8A, IB=-0.8A -0.4 -3.0 V

VBE(on) Base-Emitter On Voltage VCE=-5V, IC=-7A -1.0 -1.5 V

fT Current Gain Bandwidth Product VCE=-5V, IC=-1A 30 MHz

Cob Output Capacitance VCB=-10V, f=1MHz 360 pF

* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%

Ordering Information
Part Number Marking Package Packing Method Remarks
2SA1943RTU A1943R TO-264 TUBE hFE1 R grade
2SA1943OTU A1943O TO-264 TUBE hFE1 O grade
FJL4215RTU J4215R TO-264 TUBE hFE1 R grade
FJL4215OTU J4215O TO-264 TUBE hFE1 O grade

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SA1943/FJL4215 Rev. C 2
 2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
Typical Characteristics

-20 IB = -900mA
IB = -1A
IB = -800mA
-18 o VCE = -5V
Tj = 125 C
IB = -700mA o
IC[mA], COLLECTOR CURRENT

Tj = 25 C
-16 IB = -600mA
IB = -500mA

hFE, DC CURRENT GAIN

100
-14 A
IB = -400m
-12 IB = -300mA
o
Tj = -25 C
-10 IB = -200mA
-8
IB = -100mA 10
-6

-4

-2

1
-0 -2 -4 -6 -8 -10 0.1 1 10

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. DC current Gain ( R Grade )

10000
o Ic=-10Ib
Vce(sat)[mV], SATURATION VOLTAGE

Tj = 125 C o
Tj = 25 C VCE = -5V
hFE, DC CURRENT GAIN

100
1000
o
Tj = -25 C

o
o
Tj=25 C
10 Tj=125 C
100

o
Tj=-25 C

1 10
0.1 1 10 0.1 1 10

IC[A], COLLECTOR CURRENT Ic[A], COLLECTOR CURRENT

Figure 3. DC current Gain ( O Grade ) Figure 4. Collector-Emitter Saturation Voltage

14
10000
Vbe(sat)[mV], SATURATION VOLTAGE

Ic=-10Ib 12
IC[A], COLLECTOR CURRENT

V CE = 5V
10

8
o o
Tj=-25 C Tj=25 C
1000 6

o
4
Tj=125 C

0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
100
0.1 1 10

Ic[A], COLLECTOR CURRENT V BE [V], BASE-EMITTER VOLTAGE

Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SA1943/FJL4215 Rev. C 3
 2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
Typical Characteristics

100
1.0
Transient Thermal Resistance, Rthjc[ C / W]

IC MAX. (Pulsed*)
0.9

IC [A], COLLECTOR CURRENT

o

0.8 10ms*
10
0.7
IC MAX. (DC) 100ms*

0.6
DC
0.5 1

0.4

0.3
0.1
0.2
*SINGLE NONREPETITIVE
0.1 PULSE TC=25[ C]
o

0.01
1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 1 10 100

Pulse duration [sec] VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 7. Thermal Resistance Figure 8. Safe Operating Area

160

140
PC[W], POWER DISSIPATION

120

100

80

60

40

20

0
0 25 50 75 100 125 150 175

o
TC[ C], CASE TEMPERATURE

Figure 9. Power Derating

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SA1943/FJL4215 Rev. C 4
 18.30
17.70
20.20 5.20
B A 16.60
19.80 4.80

1.00 7.40
2.00 12.00
6.20 3.50 7.00
C R2.00 C
5.80 3.10
0.254 A B

1.20
0.80

9.10
C 0.50 21.62
8.90
21.02
20.20
19.80
R1.00 C
1.70
1.30

1.50
4.05 3.20 2.60
C
2.80 2.40
3.10 1.50 1.50
C
2.70 20.50 2.50
C 2X C
2.30 19.50
1.25
C
0.90
0.254 M A B

5.75 5.75 0.85

C
5.15 5.15 0.50

FRONT VIEW SIDE VIEW BACK VIEW

3.70 5.20
0.15 3.30 4.80

BOTTOM VIEW
NOTES:

A. PACKAGE REFERENCE: JEDEC TO264

VARIATION AA.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C OUT OF JEDEC STANDARD VALUE.
D. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
E. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
F. THIS PACKAGE IS INTENDED ONLY FOR
"FS PKG CODE AR"
G. DRAWING FILE NAME: TO264A03REV2
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Datasheet contains the design specifications for product development. Specifications may change
Advance Information Formative / In Design
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Preliminary First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
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changes at any time without notice to improve the design.
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Obsolete Not In Production
The datasheet is for reference information only.
Rev. I77

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