Electronic Devices and Circuits

(EL-324)
LABORATORY MANUAL
FALL 2016

(LAB# 03)
Practical Circuits of Diode
Engr. Muhammad Sajjad

Student Name: ___________________________

Roll No: _____________ Section: ___________

Date performed: _____________________, 2016

Manual Submission Date: ______________, 2016

_______________________________
LAB ENGINEER SIGNATURE & DATE

MARKS AWARDED: /10

______________________________________________________________________________________________________________________________________________________

NATIONAL UNIVERSITY OF COMPUTER AND EMERGING SCIENCES, ISLAMABAD

Prepared by: Engr. Naveed Iqbal Version: 2.10

Last Edited by: Engr. Muhammad Sajjad Updated: Fall 2016
Verified by: Dr. Durdana Habib
 Electronic Devices National University Roll No: __________

Lab #
& Circuits
(EL-324)
of Computer and Emerging Sciences
Islamabad Fall 2016
03
_________________________________________________________________________________

LAB: 03 Practical Circuits of Diode

Objectives:
 To implement and analyze practial diode circuits
 To analyze Theoritical and Practical results of diode circuits.

Equipment required:
 DC power supply (variable)
 Multi-meter (DMM)
 Resistor 1kohm
 IN 9001 (diode)
 Bread Board

Theory:

Doping:
The process of adding impurities in the pure semiconductor material is called doping.

Extrinsic Materials:
Those materials, which are subjected to the doping process, are called extrinsic materials. There
are two types of extrinsic materials, i.e. n-type & p-type materials. In the n-type material, the majority
carriers are the electrons while in p-type material, the majority carriers are the holes.

Semiconductor Diode:
When n-type and p-type semiconductors are combined, a p-n junction diode is formed. At the point of adjoin of
the two layers, some of the electrons and holes are combined. Since n-type donate electrons and p-type accepts
electrons, so negative ions are formed at p-side and positive ions are at n-side as shown in figure 2.1.
(Barrier Potential = 0.7V for Si, 0.3V for Ge)

Fig-2.1: PN-junction diode

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 Electronic Devices National University Roll No: __________

Lab #
& Circuits
(EL-324)
of Computer and Emerging Sciences
Islamabad Fall 2016
03
_________________________________________________________________________________

Reverse Bias:
When the positive terminal of the battery is connected to the n-side and negative terminal is connected to the p-
side, then the diode is in reverse bias. In this condition the diode does not conduct and there is no current due to
majority carriers, because the depletion layer widens with the reverse bias. The positive ions in the n-side is
repel by the positive terminal and the negative ions in the P-side are repel by the negative terminal of the
battery, so the depletion region widens.
In reverse bias, there is reverse saturation current due to the minority carriers which is very
small. The minority carriers that found themselves in the depletion region passes it and thus a small reverse
saturation current denoted by ‘Is’ flows in the reverse direction.

Forward Bias:
When the positive terminal of the battery is connected to the P-side and the negative terminal is connected to the
N-side of the diode, then the diode is in the forward bias. In forward bias the diode does not conduct until the
breakdown occurs. At a certain voltage the majority carriers get sufficient energy to pass the junction. This
voltage is called breakdown voltage and if the applied voltage is increased beyond the voltage, a large current
flows through the diode. In the reverse bias the breakdown occurs at high voltages.
The diode is a device formed from a junction of n-type and p-type semiconductor material. The I-V
characteristic curve of diode is shown below.

Fig-2.2: Characteristic Curve of PN-junction diode

The lead connected to the p-type material is called anode and the lead connected to n-type material is called
cathode. In general, the cathode of a diode is marked by a solid line on diode.

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 Electronic Devices National University Roll No: __________

Lab #
& Circuits
(EL-324)
of Computer and Emerging Sciences
Islamabad Fall 2016
03
_________________________________________________________________________________

Fig-2.3: Leads Indication of diode

When analyzing circuits, the real diode is usually replaced with a simple model. In the simplest form, the diode
is modeled by a switch (shown in figure).the switch is closed when the diode is forward biased and open when
the diode is reversed biased.

Testing a diode:
An ohmmeter may be used to qualitatively check diode function. There should be low
resistance when diode is forward bised and very high resistance measured when diode is
reversed bised as shown in Fig 2.5.

Figure 2.5: Determination of diode polarity:

(a) Low resistance indicates forward bias
(b) Reversing leads shows high resistance indicating reverse bias.

Precautions:
 Do not use current meter in parallel.

 Always break the circuit while measuring current.

 Do not use volt meter in series.

 Before applying to the circuit measured the voltages of source.

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 Electronic Devices National University Roll No: __________

Lab #
& Circuits
(EL-324)
of Computer and Emerging Sciences
Islamabad Fall 2016
03
_________________________________________________________________________________

LAB TASKS
Task 1:
Connect the diode in the forward and reverse biased configurations (Fig 2.5). Note the resistances and
check whether the diode is faulty one or not.
a) Resistance of diode in forward biased configuration: ______________________________.
b) Resistance of diode in reverse biased configuration: _______________________________.
Task 2:
Construct the circuits as shown below and measure output currents and volatges.
Compare Theoritical and Practical results.
i.

Calculations:
(a) Vin= 5V

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 Electronic Devices National University Roll No: __________

Lab #
& Circuits
(EL-324)
of Computer and Emerging Sciences
Islamabad Fall 2016
03
_________________________________________________________________________________

(b) Vin= 10V

Practical Results:
Vin With Diode With LED
(V) V (V) I (mA) ID2 (mA) Vd(V) I(mA) ID2 (mA)
5V
10V

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 Electronic Devices National University Roll No: __________

Lab #
& Circuits
(EL-324)
of Computer and Emerging Sciences
Islamabad Fall 2016
03
_________________________________________________________________________________

ii.

Calculations:
(a) Vin= 5V

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 Electronic Devices National University Roll No: __________

Lab #
& Circuits
(EL-324)
of Computer and Emerging Sciences
Islamabad Fall 2016
03
_________________________________________________________________________________

(b) Vin= 10V

Practical Results:
Vin With Diode With LED
(V) V (V) I (mA) ID2 (mA) V (V) I(mA) ID2 (mA)
5V
10V

EDC LAB NUCES, ISLAMABAD Page 8 of 12

 Electronic Devices National University Roll No: __________

Lab #
& Circuits
(EL-324)
of Computer and Emerging Sciences
Islamabad Fall 2016
03
_________________________________________________________________________________

Task 3:
Construct the circuits as shown below and measure output currents and volatges.
Compare Theoritical and Practical results.
(a)

Calculations:

Practical Results:
Vin With Diode With LED
(V)
Vin V (V) I (mA) V (V) I(mA)
(V)
5V

(b)

Calculations:

Practical Results:
Vin With Diode With LED
(V)
Vin V (V) I (mA) V (V) I(mA)
(V)
5V

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 Electronic Devices National University Roll No: __________

Lab #
& Circuits
(EL-324)
of Computer and Emerging Sciences
Islamabad Fall 2016
03
_________________________________________________________________________________

(c)

Calculations:

Practical Results:
Vin With Diode With LED
(V)
Vin V (V) I (mA) V (V) I(mA)
(V)
- 5V

(c)

Calculations:

Practical Results:
Vin With Diode With LED
(V)
Vin V (V) I (mA) V (V) I(mA)
(V)
- 5V

EDC LAB NUCES, ISLAMABAD Page 10 of 12

 Electronic Devices National University Roll No: __________

Lab #
& Circuits
(EL-324)
of Computer and Emerging Sciences
Islamabad Fall 2016
03
_________________________________________________________________________________

Task 4:
Lets connect three diodes in parallel combinations as shown below and apply three
different volatges. First how they will behave, how many of these diode will be in
forward biased conditions. Show your observations and then prove them with practical
results.
(a) Observations:

Practical Results:
Vin Output
(V)
Vin V (V) I (mA)
(V)

(b) Observations:

Practical Results:
Vin Output
(V)
Vin V (V) I (mA)
(V)

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 Electronic Devices National University Roll No: __________

Lab #
& Circuits
(EL-324)
of Computer and Emerging Sciences
Islamabad Fall 2016
03
_________________________________________________________________________________

Student's feedback: Purpose of feedback is to know the strengths and weaknesses of the
system for future improvements. This feedback is for the 'current lab session'. Circle your
choice:

[-3 = Extremely Poor, -2 = Very Poor, -1 = Poor, 0 = Average, 1 = Good, 2 = Very Good, 3 =
Excellent]:
The following table should describe your experience with:
S# Field Rating Describe your experience in words
1 Overall Session -3 -2 -1 0 1 2 3
2 Lab Instructor -3 -2 -1 0 1 2 3
3 Lab Staff -3 -2 -1 0 1 2 3
4 Equipment -3 -2 -1 0 1 2 3
5 Atmosphere -3 -2 -1 0 1 2 3

Any other valuable feedback:

__________________________________________________________________________
__________________________________________________________________________
__________________________________________________________________________

Student's Signature: _________________________________

AWARDED

Correctness

Conclusion
Originality
of results

Initiative
Neatness
MARKS

Attitude

TOTAL

TOTAL 10 10 10 20 20 30 100

EARNED

Lab Instructor's
Comments:_________________________________________________________________
__________________________________________________________________________
__________________________________________________________________________

Lab Instructor's Signature: ________________________

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