SOLID STATE DEVICES: BJT AND FET Engr. Arvin B.

Aldover

ž A Transistor is an electronic  Largest

device composed of layers of a
semiconductor material which
regulates current or voltage flow
and acts as a switch or gate for
electronic circuit.
ž The word is a contraction of
TRANSfer and resISTOR.
ž Developed in December 23, 1947 in
Bell Laboratories
ž By John Bardeen, William Shockley,
and Walter Brattain
ž Basically a reSISTOR that amplifies Types of BJT
electrical impulses as they are
TRANsferred from its input to its
output terminals
ž
ž Switching
ž Amplification
ž Oscillating Circuits
ž SensorsAmplifier
ž Impedance Matching Transistor Operation
ž
Bipolar Junction Transistors (BJT)
• BJT is constructed with three doped
semiconductor regions separated by
two PN junctions.
• BIPOLAR refers to TWO CHARGED
CARRIERS: Electrons and Holes.
• The Three Terminals: Emitter, Base
and Collector
Three Regions of BJT
— Base
 Region to which carriers flow
from emitter to collector.
 1017 dopants/ cm3
 Moderately doped
— Emitter
 Region from which carriers
flow
 1019 dopants/ cm3
 Heavily doped
— Collector
 Region to which carriers flow
 1015 dopants/ cm3
 Lightly doped

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SOLID STATE DEVICES: BJT AND FET Engr. Arvin B. Aldover

Transistor Configurations • Common Emitter Forward Current

• Common Base Amplification Factor
• Common Emitter • It is the ratio of change in collector
• Common Collector current to the base current.
Common Base • Beta ranges from 20 to 600

Common Collector

• Low input impedance (30Ω - 550 Ω)

• High output impedance (250k Ω -
550k Ω)
• ALPHA should be less than 1
Alpha Gamma
• Common Base Amplification Factor. • Common Collector Forward Current
• It is the ratio of the collector current Amplification Factor.
change to the change in emitter • It is the ratio of change in emitter
current. current to the base current.
• Ranges from 0.9 to 0.999

Common Emitter Types of Biasing

• Fixed-bias
• Emitter stabilized
• Voltage divider
• Voltage Feedback

Fixed Bias
 Fixed bias has the HIGHEST
POWER GAIN but the most
UNSTABLE
• Frequently used in practical amplifier • Base current bias
• Provides good voltage, current and
power gain
• Low input resistance (500Ω - 1500
Ω)
• High output impedance (30kΩ -
50kΩ)
Beta

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 SOLID STATE DEVICES: BJT AND FET Engr. Arvin B. Aldover

Characteristic CB CE CC
Voltage Divider Bias
Power Gain moderate highest moderate • Voltage Divider Bias is considered
the most stable but relatively lower in
Lowest
Voltage Gain highest moderate (less gain.
than 1)

lowest
Current Gain (less moderate highest
than1)

Input
lowest moderate highest
Impedance

Output
highest moderate lowest
Impedance

Voltage Feedback
• Almost the same with voltage divider
Phase
none 180o out of phase none bias but with LESS NUMBER OF
Inversion
RESISTORS
• SELF-BIAS
RF
Application universal isolation
amplifier

Emitter Stabilized
• Emitter is MORE STABLE
COMPARED TO FIXED BIAS but
with LESSER GAIN.

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SOLID STATE DEVICES: BJT AND FET Engr. Arvin B. Aldover

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