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IRF7341
HEXFET® Power MOSFET
l Generation V Technology
1
l Ultra Low On-Resistance S1
8
D1
Thermal Resistance
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient
––– 62.5 °C/W
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02/24/99
IRF7341
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.059 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.043 0.050 VGS = 10V, ID = 4.7A
RDS(on) Static Drain-to-Source On-Resistance Ω
––– 0.056 0.065 VGS = 4.5V, I D = 3.8A
VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs Forward Transconductance 7.9 ––– ––– S VDS = 10V, ID = 4.5A
––– ––– 2.0 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 25 VDS = 55V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
Qg Total Gate Charge ––– 24 36 ID = 4.5A
Qgs Gate-to-Source Charge ––– 2.3 3.4 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– 7.0 10 VGS = 10V, See Fig. 10
td(on) Turn-On Delay Time ––– 8.3 12 VDD = 28V
tr Rise Time ––– 3.2 4.8 ID = 1.0A
ns
td(off) Turn-Off Delay Time ––– 32 48 RG = 6.0Ω
tf Fall Time ––– 13 20 RD = 16Ω,
Ciss Input Capacitance ––– 740 ––– VGS = 0V
Coss Output Capacitance ––– 190 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 71 ––– ƒ = 1.0MHz, See Fig. 9
––– ––– 38
(Body Diode) p-n junction diode. S
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.0A, VGS = 0V
trr Reverse Recovery Time ––– 60 90 ns TJ = 25°C, IF = 2.0A
Qrr Reverse RecoveryCharge ––– 120 170 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ ≤ 150°C
Starting TJ = 25°C, L = 6.5mH Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 4.7A. (See Figure 8)
When mounted on 1 inch square copper board, t<10 sec
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IRF7341
100 100
VGS VGS
TOP 15V TOP 15V
12V 12V
10V 10V
I D , Drain-to-Source Current (A)
10 10
3.0V
3.0V
100 100
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
10
TJ = 150 ° C
10 TJ = 25 ° C
V DS = 25V
20µs PULSE WIDTH V GS = 0 V
1 0.1
3 4 5 6 0.2 0.5 0.8 1.1 1.4
VGS , Gate-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V)
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IRF7341
2.5 0.120
(Ω)
ID = 4.7A
RDS(on) , Drain-to-Source On Resistance
1.5
0.080
0.060
0.5
VGS = 10V
VGS = 10V
0.0 0.040
-60 -40 -20 0 20 40 60 80 100 120 140 160 0 10 20 30 40
TJ , Junction Temperature ( °C) I D , Drain Current (A)
0.12 200
ID
RDS(on) , Drain-to-Source On Resistance ( Ω )
TOP 2.1A
3.8A
160 BOTTOM 4.7A
0.10
120
0.08
80
I D = 4.7A
0.06
40
0.04 A 0
0 2 4 6 8 10 25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
V G S , Gate-to-Source V oltage (V )
1200 20
VGS = 0V, f = 1MHz ID = 4.5A
Ciss = Cgs + Cgd , Cds SHORTED
VDS = 48V
Crss = Cgd
800 Ciss
12
600
8
400
Coss
4
200
Crss
0 0
1 10 100 0 10 20 30 40
VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage
100
D = 0.50
Thermal Response (Z thJA )
0.20
10
0.10
0.05
0.02 PDM
1 0.01
t1
SINGLE PULSE
(THERMAL RESPONSE) t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
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IRF7341
SO-8 Package Details
IN C H E S M IL LIM E T E R S
D D IM
5
M IN MAX M IN M AX
-B -
A .0532 .0688 1 .35 1 .75
θ A1 .0040 .0098 0 .10 0 .25
8 7 6 5
5 B .014 .018 0 .36 0 .46
E H
-A - 0.2 5 (.0 10 ) M A M C .0 075 .0 098 0 .19 0.25
1 2 3 4
D .1 89 .1 96 4 .80 4.98
E .150 .157 3 .81 3 .99
e e .050 B A S IC 1.2 7 B A S IC
6X θ K x 45 °
e1 e1 .025 B A S IC 0.6 35 B A S IC
H .2 284 .2 440 5 .80 6.20
A
K .011 .019 0 .28 0 .48
-C- 0 .10 (.00 4) L 6 C
A1 L 0 .16 .050 0 .41 1.27
B 8X 8X 8X
θ 0° 8° 0° 8°
0 .25 (.01 0) M C A S B S
R E CO M M E ND E D F O O TP R IN T
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 0 .72 (.02 8 )
8X
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
6 .46 ( .25 5 ) 1 .78 (.07 0)
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S 8X
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
1.27 ( .0 50 )
3X
Part Marking
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IRF7341
Tape and Reel
T E R M IN A L N U M B E R 1
1 2 .3 ( .48 4 )
1 1 .7 ( .46 1 )
8 .1 ( .31 8 )
7 .9 ( .31 2 ) F E E D D IR E C T IO N
N O TES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.
33 0.0 0
(1 2 .9 9 2 )
M AX .
1 4 .4 0 ( .5 66 )
1 2 .4 0 ( .4 88 )
N O TE S :
1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
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IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 2/99
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