SEMICONDUCTOR KMD7D5P40QA

TECHNICAL DATA P-Ch Trench MOSFET

GENERAL DESCRIPTION

This Trench MOSFET has better characteristics, such as low on resistance, low
gate charge and excellent avalanche characteristiscs. It is mainly suitable for
battery protection circuit. H
T
D P G L

FEATURES
・VDSS=-40V, ID=-7.5A. A
DIM MILLIMETERS
・Drain-Source ON Resistance. A _ 0.2
4.85 +
B1 _ 0.2
3.94 +
RDS(ON)=30mΩ(Max.) @ VGS=-10V B2 _ 0.3
8 5 6.02 +
RDS(ON)=37mΩ(Max.) @ VGS=-4.5V D _ 0.1
0.4 +
G 0.15+0.1/-0.05
・Super High Dense Cell Design B1 B2
H _ 0.2
1.63 +
1 4 L _ 0.2
0.65 +
P 1.27
MOSFET Maximum Ratings (Ta=25℃ Unless otherwise noted) T 0.20+0.1/-0.05
CHARACTERISTIC SYMBOL PATING UNIT
Drain Source Voltage VDSS -40 V
Gate Source Voltage VGSS ±20 V
DC@Ta=25℃ I D* -7.5 A FLP-8
Drain Current
Pulsed IDP -30 A
Drain Source Diode Forward Current IS -30 A
Drain Power Dissipation DC@Ta=25℃ PD* 2.0 W
Maximum Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -55~150 ℃
Thermal Resistance, Junction to Ambient RthJA* 62.5 ℃/W KMD7D5P
40QA
Note : *Surface Mounted on 1”× 1” FR4 Board, t≤10sec

PIN CONNECTION (TOP VIEW)

S 1 8 D 1 8

2 7
S 2 7 D
3 6
S 3 6 D
4 5
G 4 5 D

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ELECTRICAL CHARACTERISTICS (Ta=25℃) UNLESS OTHERWISE NOTED

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=-250μA -40 - - V
Drain Cut-off Current IDSS VDS=-40V, VGS=0V - - -10 μA
Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±10 μA
Gate Threshold Voltage Vth VDS=VGS, ID=-250μA -1.0 - -3.0 V
VGS=-10V, ID=-3.8A - 24 30
Drain-Source ON Resistance RDS(ON)* mΩ
VGS=-4.5V, ID=-3.8A - 29 37
Forward Transconductance gfs* VDS=-10V, ID=-3.8A - 1.2 - S
Dynamic
Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz - 6 - kΩ
Total Gate Charge Qg* - 27 -
Gate-Source Charge Qgs* VDS=-32V, VGS=-10V, ID=-7.5A - 3.2 - nC
Gate-Drain Charge Qgd* - 8.1 -
Turn-On Delay Time td(on)* - 3.4 -
Turn-On Rise Time tr* VDD=-20V, VGS=-10V - 3.9 -
μs
Turn-Off Delay Time td(off)* ID=-7.5A, Rg=4.7Ω - 1.4 -
Turn-Off Fall Time tf* - 7.7 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF* VGS=0V, IDR=-7.5A, - - -1.2 V

Note) *Pulse Test : Pulse width ≤ 300㎲ , Duty cycle ≤ 2%

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 KMD7D5P40QA

Fig1. ID - VDS Fig2. RDS(ON)-ID

Drain-Source On Resistance RDS(ON) (mΩ)

-30 40
-10V -4.5V Common Source
-4.0V
Ta=25 C
-5.0V
-25 Pulse Test
Drain Current ID (A)

30
-20 VGS=-4.5V

-3.5V
-15 20
VGS=-10V

-10
10
-5 VGS=-3.0V

0 0
0 -1 -2 -3 -4 -5 0 -10 -20 -30 -40

Drain - Source Voltage VDS (V) Drain - Current ID (A)

Fig3. ID - VGS Fig4. RDS(on) - Tj

Drain-Source On Resistance RDS(ON) (mΩ)

-30 Common Source 40 Common Source

VDS=VGS ID=-3.8A
-25 Pulse Test Pulse Test VGS=-4.5V
Drain Current ID (A)

30
-20

-15 20
VGS=-10V

-10
Ta=125 C
-55 C 10
-5
25 C

0 0
0 -1 -2 -3 -4 -5 -75 -50 -25 0 25 50 75 100 125 150

Gate Source Volatage VGS (V) Junction Temperature Tj ( C )

Fig5. Vth - Tj Fig6. IS - VSDF

-5 Common Source -100

Gate Threshold Voltage Vth (V)

Reverse Drain Current IS (A)

VGS=VDS
ID=-250µA
-4 Pulse Test -10
Tj=25 C
-3 Tj=125 C
-1
-2

-0.1
-1

0 -0.01
-75 -50 -25 0 25 50 75 100 125 150 -0.2 -0.4 -0.6 -0.8 -1 -1.2

Junction Temperature Tj ( C) Source - Drain Forward Voltage VSDF (V)

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Fig7. Qg - VGS Fig8. Safe Operation Area

-10
-102
VDS = -32V
Gate - Source Voltage VGS (V)

ID = -7.5A
-8 IT
LIM 100µs

Drain Current ID (A)

-101 R DS(O
N)

1ms
-6

-100 10ms
-4 100ms

1s
-2 -10-1 10s
VGS= -10V
DC
SINGLE PULSE
Ta= 25 C
0 -10-2
0 6 12 18 24 30 -10-2 -10-1 -100 -101 -102

Gate - Charge Qg (nC) Drain - Source Voltage VDS (V)

Fig9. Transient Thermal Response Curve

1
10
Normalized Effective Transient Thermal Resistanc

0
10

D = 0.5
0.2
-1 0.1
10
0.05
0.02

-2 0.01 PDM
10
t1
t2
SINGLE
1. Duty Cycle D = t1/t2
2. Per unit Base = RthJA=62.5 C/W
-3
10
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
Square wave pulse Duration tw (sec)

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