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(b) Define electron volt and draw general energy band diagram for insulator, semiconductor, and
metal.
Q.3 (a) Draw diode I-V characteristic and explain diode static and dynamic resistances.
(b) What is transition capacitance of a p- n junction diode? For a step graded junction prove that
the expression for the transition capacitance of a diode is same as the capacitance of a parallel
plate capacitor.
OR
Q3
Q.3 (a) A sinusoidal voltage peak value of 15V and frequency 50 Hz is applied at the input of clipping
circuit shown in figure below. Draw output voltage waveform and transfer characteristic.
Assume both diodes are ideal.
(b)
Sketch the full-wave bridge rectifier circuit and explain its operation with circuit equation.
Q.4 (a) Explain the h-parameter model of CE amplifier with Bypass resistor RE and derive the
expression
i ffor Ai , A
Av , Ri , Ro.
R
(b) Explain the base-width modulation and its effect on minority-carrier concentration in the
base region of a transistor as well as on the common-base input characteristics of a typical p-n-
p transistor.
© What is thermal runaway ?
Q.5 (a) State the need of biasing. Discuss voltage self bias circuit and mention its advantages.
(b)
Show that the upper limit of the conversion efficiency (η) for the Class B amplifier is 78.54 %.
© Datasheet for a JFET indicates that IDSS=15mA
IDSS 15mA and VGS(off) = -4v. 4v. Determine the drain
current for VGS= 0v, -1v.