Radio Frequency Circuit Design. W.

Alan Davis, Krishna Agarwal

Copyright  2001 John Wiley & Sons, Inc.
Print ISBN 0-471-35052-4 Electronic ISBN 0-471-20068-9

APPENDIX F

Transistor and Amplifier

Formulas

The following formulas are meant as a reminder of the fundamentals given in

most standard electronics textbooks. Notation for the formulas have the tradi-
tional meanings. Depletion capacitances are all given with a negative sign in
the denominator as in C D C0 /1  V/ . Consequently, when the junction is
reverse biased, the minus sign turns into a positive sign. Figure F.1 presents the
basic FET features and symbols.

Bipolar Transistor Parameters (BJT)

DESCRIPTION FORMULA


qVBE
Collector current IC D IS exp
kT
qIC
Transconductance gm D
kT
ˇ0
Input resistance r D
gm
VA
Output resistance ro D
IC
Base charging capacitance CD D F gm


qεNB 1/3
Emitter base junction Cje D AE
Vj
Input capacitance C D CD C Cje
Co
Collector base C D 1/3
[1  VBC / oc ]

300
 TRANSISTOR AND AMPLIFIER FORMULAS 301

Ccso
Collector substrate Ccs D
[1  Vsc / os ]1/2
1 gm
Transition frequency fT D
2 C C C 
kT
Thermal voltage VT D D 0.259 V
q

FET Symbols

ID

NMOS Depletion. NMOS Enhance.

NJFET

V GS

PMOS Enhance. PMOS Depletion.

PJFET

n -Channel JFET p -Channel JFET

n -Channel MOSFET — p -Channel MOSFET —

Enhancement Enhancement

n -Channel MOSFET — p -Channel MOSFET —

Depletion Depletion

FIGURE F.1 FET symbols.

302 TRANSISTOR AND AMPLIFIER FORMULAS

Junction Field Effect Transistor Parameters (JFET)

DESCRIPTION FORMULA



VGS 2 VDS
Saturated drain current ID D IDSS 1  1
VP VA
VDS ½ VGS  VP
 
 0 C VGS  VDS 3/2
 3  0 C VGS 
3/2 
Ohmic region drain current ID D Go 
 VDS C 

2  0 C VP 1/2

VDS < VGS  VP

2aW
G0 D c
L

ID ³ K 2VGS  VP VDS  V2DS


2IDSS VGS
Transconductance gm D 1
VP VP
VA
Output resistance ro D
ID
Cgs0
Gate source capacitance Cgs D
[1  VGS / 0 ]1/3
Cgd0
Gate drain capacitance Cgd D

VGD 1/3
1
0
Cgss0
Gate substrate capacitance Cgss D 1/2
[1  VGSS / 0 ]
N Channel JFET VP < 0
P Channel JFET VP > 0

Metal Oxide Semiconductor Field Effect Transistor Parameters (MOSFET)

DESCRIPTION FORMULA


Cox W 2 VDS
Saturation region drain ID D VGS  Vt  1 
current 2L VA
VDS ½ VGS  Vt
Cox W

Ohmic region drain current ID D 2VGS  Vt VDS  V2DS

2L 
VDS
ð 1
VA
VDS < VGS  Vt
 TRANSISTOR AND AMPLIFIER FORMULAS 303

εox
Oxide capacitance Cox D
tox
W
Transconductance gm D Cox VGS  Vt 
L
jVA j
Output resistance ro D
ID0
Input capacitance Cin D CGS C CGD D Cox LW
gm s VGS  Vt 
Transition frequency fc D D
2Cin 2L 2
Surface mobility holes s D 200 cm2 /V-s

Surface mobility electrons s D 450 cm2 /V-s

N CHANNEL JFET P CHANNEL JFET

IDSS > 0 IDSS < 0

VP < 0 VP > 0
2IDSS 2IDSS
gmo gmo D
VP VP
 IDSS  IDSS
KD >0 KD <0
V2P V2P
VP < VGS for jIDS j > 0 VGS < VP for jIDS j > 0

NMOS ENHANCEMENT PMOS ENHANCEMENT

Vt > 0 Vt < 0

VGS > Vt VGS < Vt

 n Cox W  p Cox W
KD >0 KD <0
2L 2L
NMOS DEPLETION PMOS DEPLETION

Vt < 0 Vt > 0

VGS > Vt < 0 for jIDS j > 0 VGS < Vt < 0 for jIDS j

 n Cox W  p Cox W
KD >0 KD <0
2L 2L
304 TRANSISTOR AND AMPLIFIER FORMULAS

Small Signal Single-Transistor Amplifier Configurations

MOSFET BJT

Common source Common emitter

Rin D RG D R1 jjR2 Rin D r C rb jjRB ³ r
Rout D RD jjr0 Rout D Rc jjr0
p
AV D gm r0 jjRD jjRL  / 1/ ID AV D gm Rc jjr0 jjRL 
Source degeneration Emitter degeneration
Rin D RG D R1 jjR2 Rin D r C RE ˇ C 1
³ r 1 C gm RE 

Rout D r0 [1 C gm C gmb RS ] Rout D RE jjr C r0 1 C gm r jjRE 

CRS ³ r0 1 C gm RE 
gm gm
Gm D Gm D
1 C gm C gmb RS 1 C gm RE
Commmon gate Common base
RD ˛0 rb ˛0
Rin D Rin D re D C ³
1 C RD gm C gmb  gm ˇC1 gm
1
³
gm C gmb
Rout D RD Rout D r0 1 C ˇjjRc


1
Gm D gm C gmb Gm D gm ³ gm
1 C rb /r
AV D gm Rc jjRL 
gm Rc RE
AI D ³ gm re D ˛0
Rc C RL 1 C gm RE
Common drain (source follower) Commmon collector (emitter follower)
Rin D R1 jjR2 Rin D r C rb C ˇ C 1r0 jjRE 
r0 r C RBB C rb 1 RBB C rb
Rout D Rout D ³ C
1 C r0 gm C gmb  1Cˇ gm 1Cˇ
1
³
gm C gmb

gm RS jjr0  1
AV D AV D ³1
1 C RS jjr0 gm C gmb  1 C [RBB C rb C r /
RE jjr0 ˇ C 1]
1
³ ³1
1 C gmb /gm