ST H1061

NPN Plastic Power Transistor

Low frequency power amplifier

TO-220 Plastic Package

C H
E
Absolute Maximum Ratings (Ta = 25 OC)

T
Parameter Symbol Value Unit
Collector Emitter Voltage VCEO 50 V

M
Collector Base Voltage VCBO 50 V
Emitter Base Voltage VEBO 4 V

E
Collector Current IC 3 A
Power Dissipation Ptot 25 W

S
Junction Temperature Tj 150 O
C
Storage Temperature Range TS -45 to +150 O
C

SEMTECH ELECTRONICS LTD.

Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 22/3/2006
ST H1061

Characteristics at Tamb=25 OC
Parameter Symbol Min. Typ. Max. Unit
DC Current Gain
at VCE = 4 V, IC = 1 A STH1061A hFE 35 - 70 -
STH1061B hFE 60 - 120 -
STH1061C hFE 100 - 200 -
STH1061D hFE 160 - 320 -
at VCE = 4 V, IC = 0.1 A hFE 35 - - -
Collector Cutoff Current

H
ICBO - - 0.1 mA
at VCB = 20 V
Collector Saturation Voltage
VCE(sat) - - 1 V

C
at IC = 2 A, IB = 0.2 A
Collector Emitter Breakdown Voltage
V(BR)CEO 50

E
at IC = 50 mA - - V
Collector Base Breakdown Voltage
V(BR)CBO 50
at IC = 5 mA - - V

T
Emitter Base Breakdown Voltage
V(BR)EBO 4
at IE = 5 mA - - V

M
Base Emitter Voltage
VBE - - 1.5 V
at IC = 1 A, VCE = 4 V
Gain Bandwidth Product

E
fT - 8 - MHz
at VCE = 4 V, IC = 0.5 A

S
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 22/3/2006
ST H1061

TO-220 PACKAGE OUTLINE

C H
T E
E M
S
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 22/3/2006