QM3016D

N-Ch 30V Fast Switching MOSFETs

General Description Product Summery

The QM3016D is the highest performance trench

N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID
which provide excellent RDSON and gate charge
30V 4mΩ 96A
for most of the synchronous buck converter
applications .
Applications
The QM3016D meet the RoHS and Green Product
requirement 100% EAS guaranteed with full z High Frequency Point-of-Load Synchronous
function reliability approved. Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features z Load Switch

z Advanced high cell density Trench technology TO252 Pin Configuration

z Super Low Gate Charge D
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available

Absolute Maximum Ratings S

G
Rating
Symbol Parameter 10s Steady State Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
1
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 96 A
1
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 68 A
1
ID@TA=25℃ Continuous Drain Current, VGS @ 10V 30 19 A
1
ID@TA=70℃ Continuous Drain Current, VGS @ 10V 25 16 A
2
IDM Pulsed Drain Current 192 A
3
EAS Single Pulse Avalanche Energy 317 mJ
IAS Avalanche Current 53.8 A
4
PD@TC=25℃ Total Power Dissipation 62.5 W
4
PD@TA=25℃ Total Power Dissipation 6 2.42 W
TSTG Storage Temperature Range -55 to 175 ℃
TJ Operating Junction Temperature Range -55 to 175 ℃

Thermal Data

Symbol Parameter Typ. Max. Unit

RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W
RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 25 ℃/W
1
RθJC Thermal Resistance Junction-Case --- 2.4 ℃/W

Rev A.01 D021011

1
 QM3016D
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.0213 --- V/℃
VGS=10V , ID=30A --- 3.4 4
RDS(ON) Static Drain-Source On-Resistance2 mΩ
VGS=4.5V , ID=15A --- 5.2 6
VGS(th) Gate Threshold Voltage 1.0 1.5 2.5 V
VGS=VDS , ID =250uA
△VGS(th) VGS(th) Temperature Coefficient --- -5.73 --- mV/℃
VDS=24V , VGS=0V , TJ=25℃ --- --- 1
IDSS Drain-Source Leakage Current uA
VDS=24V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=30A --- 26.5 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.4 2.8 Ω
Qg Total Gate Charge (4.5V) --- 31.6 ---
Qgs Gate-Source Charge VDS=15V , VGS=4.5V , ID=15A --- 8.6 --- nC
Qgd Gate-Drain Charge --- 11.7 ---
Td(on) Turn-On Delay Time --- 9 ---
Tr Rise Time VDD=15V , VGS=10V , RG=3.3Ω --- 19 ---
ns
Td(off) Turn-Off Delay Time ID=15A --- 58 ---
Tf Fall Time --- 15.2 ---
Ciss Input Capacitance --- 3075 4000
Coss Output Capacitance VDS=15V , VGS=0V , f=1MHz --- 400 530 pF
Crss Reverse Transfer Capacitance --- 315 ---

Guaranteed Avalanche Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

5
EAS Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=30A 98 --- --- mJ

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

1,6
IS Continuous Source Current --- --- 96 A
VG=VD=0V , Force Current
ISM Pulsed Source Current2,6 --- --- 192 A
2
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V
trr Reverse Recovery Time IF=30A , dI/dt=100A/µs , --- 18 --- nS
Qrr Reverse Recovery Charge TJ=25℃ --- 8 --- nC

Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=53.8A
4.The power dissipation is limited by 175℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

2
 QM3016D
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
210
5.0

180
ID=12A
ID Drain Current (A)

150 VGS=10V 4.5

VGS=7V

RDSON (mΩ)
120
VGS=5V
4.0
90
VGS=4.5V

60 VGS=3V
3.5
30

0
3.0
0 0.3 0.6 0.9 1.2 1.5
VDS , Drain-to-Source Voltage (V) 2 4 6 8 10
VGS (V)
Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage

12 10

ID=15A
10 8
VGS Gate to Source Voltage (V)
IS Source Current(A)

8
6

6
TJ=175℃ TJ=25℃ 4
4

2
2

0 0
0 0.3 0.6 0.9 1.2 0 20 40 60 80
VSD , Source-to-Drain Voltage (V) QG , Total Gate Charge (nC)

Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics

1.5 2.0
Normalized On Resistance
Normalized VGS(th)

1 1.5

0.5 1.0

0 0.5
-50 25 100 175 -50 25 100 175
TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃)

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

3
 QM3016D
N-Ch 30V Fast Switching MOSFETs
10000 1000.00
F=1.0MHz
10us
100.00
Ciss 100us
Capacitance (pF)

1000
10.00
Coss 10ms

ID (A)
100ms
Crss 1.00 DC
100

0.10
TC=25℃
Single Pulse
0.01
10
0.1 1 10 100
1 5 9 13 17 21 25
VDS Drain to Source Voltage(V) VDS (V)

Fig.7 Capacitance Fig.8 Safe Operating Area

1
Normalized Thermal Response (RθJC)

DUTY=0.5

0.2

0.1
0.1

0.05 P DM T ON
0.02
T
0.01
D = TON/T
SINGLE
TJpeak = TC+P DMXRθJC

0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)

Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform