CMOS Fabrication

Dr. K. R. Pasupathy
Overview
• CMOS Fabrication technologies
• N-well
• P-well
• Twin-tub processes
• CMOS process steps (fabrication steps)
• Crystal growth
• Photolithography
• Oxidation
• Diffusion
• Ion implantation
• Etching
• Metallization
CMOS inverter cross section
• Input is A (two gates are connected)
• Output is Y (two drains are connected)
• Other than contact regions – SiO2 (field oxide)
• Substrate – low potential; n-well – high potential
• Substrate and well contacts in semiconductor are heavily doped
• Ohmic contact (low resistance and bidirectional)
Masks
• Masks specify where the
components will be
manufactured.
• To define the regions where
it should be formed
n-well process
CMOS inverter fabrication using n-well
process
CMOS inverter fabrication using n-well
process (cont’d)
CMOS inverter fabrication using n-well
process (cont’d)
Working of photoresist

• Light sensitive material

• When UV light falls, it
undergoes chemical changes
• Becomes more soluble or less
soluble according to whether it
is positive or negative
• Photoresist is dipped into a
solvent called “developer
solution”
• Soluble portions are dissolved
• Use – to etch selected
portions
CMOS inverter fabrication using n-well
process (cont’d)
CMOS inverter fabrication using n-well
process (cont’d)
CMOS inverter fabrication using n-well
process (cont’d)
CMOS inverter fabrication using n-well
process (cont’d)
CMOS inverter fabrication using n-well
process (cont’d)
CMOS inverter fabrication using n-well
process (cont’d)
Procedure for doping
• Whenever you want dope,
• Grow SiO2
• Add photo resist
• Expose light through mask
• Wash it with developer solution
• Etch SiO2 selectively
• Dope the region through diffusion
or ion implantation
• Finally etch the oxide completely
CMOS inverter fabrication using n-well
process (cont’d)
CMOS inverter fabrication using n-well
process (cont’d)
CMOS inverter fabrication using n-well
process (cont’d)
CMOS inverter fabrication using n-well
process (cont’d)
CMOS inverter fabrication using n-well
process (cont’d)
CMOS inverter fabrication using n-well
process (cont’d)
CMOS inverter fabrication using n-well
process (cont’d)
CMOS inverter fabrication using n-well
process (cont’d)
CMOS inverter fabrication using n-well
process - Final structure
P-well process
P-well process steps

• eBook :- Neil Weste and Kamran Eshraghian “Principles of CMOS VLSI

Design – A systems perspective”
P-well process steps (cont’d)

• Dopants can
penetrate thin oxide
but not thick oxide
P-well process steps (cont’d)
P-well process steps (cont’d)
Cross section of p-well cmos
(a) Schematic

(b) layout

(c) Cross section of p-well process

(d) More realistic cross-section

P-well substrate contacts
Twin-tub process
Twin tub process
• Can be viewed as independent
devices
• Device parameters of n-device and p-
devices can be independently
optimized
• Major steps
• Tub formation
• Thin oxide etching
• Source and drain implantation
• Contact cut definition
• metallization
Twin tub process
Twin tub process
Twin tub process
Twin tub process