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SOIC-8
D
D
G G
S
S
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 34 40 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 62 75 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 18 24 °C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
60 20
10V
50 6V
16 VDS=5V
40
4.5V 12
ID (A)
ID(A)
30
8
20
125°C
VGS=3.5V
4
10 25°C
0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
40 1.6
VGS=10V
Normalized On-Resistance
35
VGS=4.5V 1.4
30
RDS(ON) (mΩ )
1.2 VGS=4.5V
25
1
20
VGS=10V
15 0.8
10 0.6
0 5 10 15 20 -50 -25 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature
60 1.0E+01
ID=9.4A
1.0E+00
50
1.0E-01
RDS(ON) (mΩ )
40 125°C
IS (A)
1.0E-02
125°C
THIS PRODUCT
30 25°C AS CRITICAL
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
20 1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT
25°CNOTICE.
10 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
10 1000
8 800
VDS=15V
Ciss
Capacitance (pF)
ID=9.4A
VGS (Volts)
6 600
4 400
Coss
2 200
Crss
0 0
0 2 4 6 8 10 12 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100 100.0
In descending order
IA, Peak Avalanche Current (A)
10
RDS(ON)
limited
1.0 1ms
10ms
10s 0.1s
TJ(Max)=150°C
TA=25°C DC 1s
1 0.1
0.001 0.01 0.1 1 10 100 0.1 1 10 100
VDS (Volts)
Time in Avalache, tA (ms)
Figure 10: Maximum Forward Biased Safe
Figure 9: Single Pulse Avalanche Capability
Operating Area (Note E)
50
TJ(Max)=150°C
TA=25°C
40
Power (W)
30
20
10
0
0.0001 0.01 1 100
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note E)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
RθJA=75°C/W
Thermal Resistance
0.1
PD
Single Pulse Ton
T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Vgs
Qg
+ 10V
VDC
+ Qgs Qgd
- VDC Vds
DUT -
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
DUT
+
Vgs VDC Vdd
Rg -
10%
t on t off
Id Vds
Vgs +
Vgs VDC Vdd I AR
Rg - Id
DUT
Vgs Vgs