BUZ 271

SIPMOS ® Power Transistor

• P channel
• Enhancement mode
• Avalanche rated

Pin 1 Pin 2 Pin 3

G D S

Type VDS ID RDS(on) Package Ordering Code

BUZ 271 -50 V -22 A 0.15 Ω TO-220 AB C67078-S1453-A2

Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TC = 26 °C -22
Pulsed drain current IDpuls
TC = 25 °C -88
Avalanche energy, single pulse EAS mJ
ID = -22 A, VDD = -25 V, RGS = 25 Ω
L = 413 µH, Tj = 25 °C 200
Gate source voltage VGS ± 20 V
Power dissipation Ptot W
TC = 25 °C 125
Operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC ≤1 K/W
Thermal resistance, chip to ambient RthJA ≤ 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group 1 07/96

 BUZ 271

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C -50 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = 1 mA -2.1 -3 -4
Zero gate voltage drain current IDSS µA
VDS = -50 V, VGS = 0 V, Tj = 25 °C - -0.1 -1
VDS = -50 V, VGS = 0 V, Tj = 125 °C - -10 -100
Gate-source leakage current IGSS nA
VGS = -20 V, VDS = 0 V - -10 -100
Drain-Source on-resistance RDS(on) Ω
VGS = -10 V, ID = -14 A - 0.12 0.15

Semiconductor Group 2 07/96

 BUZ 271

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = -14 A 1.5 4 -
Input capacitance Ciss pF
VGS = 0 V, VDS = -25 V, f = 1 MHz - 2000 2700
Output capacitance Coss
VGS = 0 V, VDS = -25 V, f = 1 MHz - 650 975
Reverse transfer capacitance Crss
VGS = 0 V, VDS = -25 V, f = 1 MHz - 250 375
Turn-on delay time td(on) ns
VDD = -30 V, VGS = -10 V, ID = -2.95 A
RGS = 50 Ω - 30 45
Rise time tr
VDD = -30 V, VGS = -10 V, ID = -2.95 A
RGS = 50 Ω - 120 180
Turn-off delay time td(off)
VDD = -30 V, VGS = -10 V, ID = -2.95 A
RGS = 50 Ω - 130 175
Fall time tf
VDD = -30 V, VGS = -10 V, ID = -2.95 A
RGS = 50 Ω - 140 190

Semiconductor Group 3 07/96

 BUZ 271

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TC = 25 °C - - -22
Inverse diode direct current,pulsed ISM
TC = 25 °C - - -88
Inverse diode forward voltage VSD V
VGS = 0 V, IF = -44 A - -1.25 -1.7
Reverse recovery time trr ns
VR = -30 V, IF=lS, diF/dt = 100 A/µs - 90 -
Reverse recovery charge Qrr µC
VR = -30 V, IF=lS, diF/dt = 100 A/µs - 0.23 -

Semiconductor Group 4 07/96

 BUZ 271

Power dissipation Drain current

Ptot = ƒ(TC) ID = ƒ(TC)
parameter: VGS ≥ -10 V

130 -24

W A
110 -20
Ptot ID
100
-18
90
-16
80
-14
70
-12
60
-10
50
-8
40
-6
30

20 -4

10 -2
0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

Safe operating area Transient thermal impedance

ID = ƒ(VDS) Zth JC = ƒ(tp)
parameter: D = 0.01, TC = 25°C parameter: D = tp / T

-10 3 10 1

K/W
A
ID ZthJC
10 0
t = 35.0µs
-10 2 p

100 µs

/ID 1 ms
10 -1
S D = 0.50
VD
=
) 0.20
on
S(
-10 1 RD 0.10
10 ms
0.05
10 -2
0.02
0.01
DC
single pulse

-10 0 10 -3
0 1 2 -7 -6 -5 -4 -3 -2 -1 0
-10 -10 V -10 10 10 10 10 10 10 10 s 10
VDS tp

Semiconductor Group 5 07/96

 BUZ 271

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs parameter: VGS

-50 0.45 a b c d e f g h i
Ptot = 125W
l
A Ω
VGS [V]

ID -40 a -4.0 RDS (on)0.35

b -4.5
-35 c -5.0
d -5.5
0.30
-30 e -6.0
f -6.5 0.25
-25 g -7.0
h -7.5 0.20
k
-20 i -8.0

j j -9.0
0.15
-15 k -10.0
i l -20.0
h 0.10
-10 j
g
f VGS [V] =
-5 e 0.05 a b c d e f g h i j
d
c -4.0 -5.5 -6.0 -6.5 -7.0 -7.5
-4.5
-5.0 -8.0 -9.0 -10.0 -20.0
0 b 0.00
a
0 -2 -4 -6 -8 V -12 0 -4 -8 -12 -16 A -24
VDS ID

Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max

-24 6.0

A S

-20 5.0
ID gfs
-18 4.5

-16 4.0

-14 3.5

-12 3.0

-10 2.5

-8 2.0

-6 1.5

-4 1.0

-2 0.5
0 0.0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0 -4 -8 -12 -16 A -22
VGS ID

Semiconductor Group 6 07/96

 BUZ 271

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj ) VGS (th) = ƒ(Tj)
parameter: ID = -14 A, VGS = -10 V parameter: VGS = VDS, ID = 1 mA

0.36 -4.6
V 98%
Ω
-4.0
RDS (on) VGS(th)
0.28 -3.6

-3.2 typ
0.24
-2.8
0.20
98% -2.4 2%
0.16 -2.0
typ

0.12 -1.6

-1.2
0.08
-0.8
0.04
-0.4
0.00 0.0
-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS = 0V, f = 1MHz parameter: Tj , tp = 80 µs

10 1 -10 2

nF A
C IF
Ciss

10 0 -10 1

Coss

Crss

10 -1 -10 0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)

10 -2 -10 -1
0 -5 -10 -15 -20 -25 -30 V -40 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0
VDS VSD

Semiconductor Group 7 07/96

 BUZ 271

Avalanche energy EAS = ƒ(Tj ) Drain-source breakdown voltage

parameter: ID = -22 A, VDD = -25 V V(BR)DSS = ƒ(Tj)
RGS = 25 Ω, L = 413 µH

220 -60
V
mJ

180
EAS V(BR)DSS-57
160 -56
-55
140
-54
120 -53

100 -52
-51
80
-50
60 -49

40 -48
-47
20
-46
0 -45
20 40 60 80 100 120 °C 160 -60 -20 20 60 100 °C 160
Tj Tj

Semiconductor Group 8 07/96

 BUZ 271

Package Outlines
TO-220 AB
Dimension in mm

Semiconductor Group 9 07/96