Shenzhen Tuofeng Semiconductor Technology Co.

, Ltd
SOT-23 Plastic-Encapsulate Transistors

SS8050LT1 TRANSISTOR (NPN)

SOT-23
1. BASE

FEATURES 2. EMITTER
3. COLLECTOR

Power dissipation

1. 0
PCM: 0.3 W ( Tamb=25℃) 2. 4
1. 3

Collector current

0. 95
ICM: 1.2 A

2. 9
1. 9
Collector-base voltage

0. 4
V(BR)CBO: 40 V

0. 95
Operating and storage junction temperature range
Unit: mm
TJ, Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 25 V

Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V

Collector cut-off current ICBO VCB=40V, IE=0 0.1 µA

Collector cut-off current ICEO VCB=20V, IE=0 0.1 µA

Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 µA

hFE(1) VCE=1V, IC= 100mA 120 350

DC current gain
hFE(2) VCE=1V, IC= 800mA 40

Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V

Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V

VCE=6 V, I C= 20mA
Transition frequency fT 100 MHz
f=30MHz
CLASSIFICATION OF hFE(1)
Rank L H
Range 120-200 200-350

DEVICE MARKING SS8050LT1=Y1

 SS8050LT1

0.5 1000

VCE = 1V
IB = 3.0mA
IC[A], COLLECTOR CURRENT

0.4

hFE, DC CURRENT GAIN

IB = 2.5mA
100
0.3 IB = 2.0mA

IB = 1.5mA
0.2
10
IB = 1.0mA
0.1

IB = 0.5mA

1
0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 1000

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

10000 100

IC = 10 IB VCE = 1V
IC[mA], COLLECTOR CURRENT

VBE(sat)
1000 10

100 1

VCE(sat)

10 0.1
0.1 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2

IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE

1000 1000
CURRENT GAIN BANDWIDTH PRODUCT

IE = 0 VCE = 10V
f = 1MHz
Cob [pF], CAPACITANCE

100 100
fT[MHz],

10 10

1 1
1 10 100 1 10 100 400

VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

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