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May 2008
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FDS6690AS
30V N-Channel PowerTrench® SyncFET™
D
D 5 4
D
D 6 3
7 2
G
S 8 1
S
SO-8 S
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V
∆BVDSS Breakdown Voltage Temperature
ID = 10 mA, Referenced to 25°C 30 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA
IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.6 3 V
∆VGS(th) Gate Threshold Voltage ID = 10 mA, Referenced to 25°C
–4 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = 10 V, ID = 10 A 10 12 mΩ
On–Resistance VGS = 4.5 V, ID = 8.5 A 12 15
VGS=10 V, ID =10A, TJ=125°C 15 19
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward Transconductance VDS = 15 V, ID = 10 A 45 S
Dynamic Characteristics
Ciss Input Capacitance VDS = 15 V, V GS = 0 V, 910 pF
Coss Output Capacitance f = 1.0 MHz 270 pF
Crss Reverse Transfer Capacitance 100 pF
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 2.0 Ω
50 2.2
VGS = 4.0V
VGS = 10V 4.0V
DRAIN-SOURCE ON-RESISTANCE
40
ID, DRAIN CURRENT (A)
1.8
RDS(ON), NORMALIZED
6.0V 4.5V
30 3.5V
1.4
3.0V 4.0V
20 4.5V
5.0V
6.0V
10V
1
10
2.5V
0 0.6
0 0.5 1 1.5 2 0 10 20 30 40 50
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
1.6 0.06
ID = 10A ID = 5A
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
1.45 0.05
RDS(ON), NORMALIZED
1.3 0.04
1.15 0.03
o
TA = 125 C
1 0.02
0.85 0.01
TA = 25oC
0.7 0
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)
50 10
VDS = 5V VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
40
ID, DRAIN CURRENT (A)
TA = 125oC
30
25oC
0.1
20 -55oC
o
TA = 125 C o
-55 C
0.01
10
25oC
0 0.001
1 1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
10 1400
f = 1MHz
ID =10A VGS = 0 V
VGS, GATE-SOURCE VOLTAGE (V)
1200
8
VDS = 10V 1000
CAPACITANCE (pF)
Ciss
20V
6 800
15V 600
4
Coss
400
2
200
Crss
0 0
0 3 6 9 12 15 18 21 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
100 50
RDS(ON) LIMIT
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
100µs RθJA = 125°C/W
1ms 40 TA = 25°C
ID, DRAIN CURRENT (A)
10 10ms
100ms
1s 30
1 10s
DC
20
VGS = 10V
0.1 SINGLE PULSE
o
RθJA = 125 C/W 10
TA = 25oC
0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
TRANSIENT THERMAL RESISTANCE
1
r(t), NORMALIZED EFFECTIVE
D = 0.5
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
0.001
TA = 100oC
0.0001
3A/DIV
0.00001
TA = 25oC
0.000001
0 5 10 15 20 25 30
VDS, REVERSE VOLTAGE (V)
0V
10nS/DIV
VDS L
BVDSS
VGS tP
VDS
RGE DUT + IAS
VDD VDD
0V -
VGS tp IAS
vary tP to obtain
required peak IAS 0.01Ω
tAV
Figure 15. Unclamped Inductive Load Test Figure 16. Unclamped Inductive
Circuit Waveforms
Drain Current
Same type as
50kΩ
+10V
F
- 10µ 1µF +
VDD
QG(TOT)
-
VGS 10V
DUT
VGS QGS QGD
Ig(REF
Charge, (nC)
Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform
tON tOFF
td(ON) td(OFF
RL
VDS VDS tr ) tf
90% 90%
VGS +
10% 10%
RGEN DUT VDD 0V
- 90%
VGS
VGSPulse Width ≤ 1µs 50% 50%
10%
Duty Cycle ≤ 0.1% 0V Pulse Width
Figure 19. Switching Time Test Figure 20. Switching Time Waveforms
Circuit
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
As used herein:
1. Life support devices or systems are devices or systems which, 2. A critical component in any component of a life support,
(a) are intended for surgical implant into the body or (b) device, or system whose failure to perform can be reasonably
support or sustain life, and (c) whose failure to perform when expected to cause the failure of the life support device or
properly used in accordance with instructions for use provided system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury of the user.
FDS6690AS Rev.A2(X)