PD - 95137A

IRF7416PbF
l Generation V Technology HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel Mosfet 1 8
A
S D
l Surface Mount
2 7 VDSS = -30V
l Available in Tape & Reel S D

l Dynamic dv/dt Rating S

3 6
D
l Fast Switching 4

l Lead-Free
G 5
D RDS(on) = 0.02Ω

Description Top View

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices SO-8
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -10
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -7.1 A
IDM Pulsed Drain Current c -45
PD @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy d 370 mJ
dv/dt Peak Diode Recovery dv/dt e -5.0 V/ns
TJ Operating Junction and
-55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Max. Units
RθJA Junction-to-Ambient g 50 °C/W

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Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.020 VGS = -10V, ID = -5.6A f
RDS(on) Static Drain-to-Source On-Resistance
––– ––– 0.035
Ω
VGS = -4.5V, ID = -2.8A f
VGS(th) Gate Threshold Voltage -1.0 ––– -2.04 V VDS = VGS, ID = -250μA
gfs Forward Transconductance 5.6 ––– ––– S VDS = -10V, ID = -2.8A
IDSS Drain-to-Source Leakage Current ––– ––– -1.0 VDS = -24V, VGS = 0V
μA
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge ––– 61 92 ID = -5.6A
Qgs Gate-to-Source Charge ––– 8.0 12 nC VDS = -24V
Qgd Gate-to-Drain ("Miller") Charge ––– 22 32 VGS = -10V, See Fig. 6 & 9 f
td(on) Turn-On Delay Time ––– 18 ––– VDD = -15V
tr Rise Time ––– 49 ––– ID = -5.6A
ns
td(off) Turn-Off Delay Time ––– 59 ––– RG = 6.2Ω
tf Fall Time ––– 60 ––– RD = 2.7Ω, See Fig. 10 f
Ciss Input Capacitance ––– 1700 ––– VGS = 0V
Coss Output Capacitance ––– 890 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 410 ––– ƒ = 1.0MHz, See Fig. 5

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -3.1

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

(Body Diode) c ––– ––– -45

p-n junction diode. S

VSD Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -5.6A, VGS = 0V e
trr Reverse Recovery Time ––– 56 85 ns TJ = 25°C,IF = -5.6A
Qrr Reverse Recovery Charge ––– 99 150 nC di/dt = 100A/μs e

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 25mH
RG = 25Ω, IAS = -5.6A. (See Figure 12)
ƒ ISD ≤ -5.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
T J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Surface mounted on FR-4 board, t ≤ 10sec.

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100 100
VGS VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 7.0V - 7.0V
- 5.5V - 5.5V

-I D , Drain-to-Source Current (A)

-I D , Drain-to-Source Current (A)

- 4.5V - 4.5V
- 4.0V - 4.0V
- 3.5V - 3.5V
BOTTOM - 3.0V BOTTOM - 3.0V

10 10

-3.0V

-3.0V

20μs PULSE WIDTH 20μs PULSE WIDTH

TJ = 25°C TJ = 150°C A
1 A 1
0.1 1 10 0.1 1 10
-VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0
I D = -5.6A
R DS(on) , Drain-to-Source On Resistance
-ID , Drain-to-Source Current (A)

TJ = 25°C 1.5

TJ = 150°C
(Normalized)

10 1.0

0.5

VDS = -10V
20μs PULSE WIDTH VGS = -10V
1 0.0 A
A
3.0 3.5 4.0 4.5 5.0 5.5 -60 -40 -20 0 20 40 60 80 100 120 140 160

-VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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4000 20
V GS = 0V, f = 1MHz I D = -5.6A
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd

-VGS , Gate-to-Source Voltage (V)

C oss = C ds + C gd VDS = -24V
16 VDS = -15V
3000
C, Capacitance (pF)

Ciss 12

2000 Coss

1000 Crss
4

FOR TEST CIRCUIT

SEE FIGURE 9
0 A 0 A
1 10 100 0 20 40 60 80 100
VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-ISD , Reverse Drain Current (A)

-IID , Drain Current (A)

100us
TJ = 150°C

10 10
TJ = 25°C
1ms

TA = 25 °C 10ms
TJ = 150 ° C
VGS = 0V
Single Pulse
1 A 1
0.1 1 10 100
0.4 0.6 0.8 1.0 1.2
-VDS , Drain-to-Source Voltage (V)
-VSD , Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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RD
VDS
QG
V GS
D.U.T.
-10V QGS QGD RG -
+ VDD
VG
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge

Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.

50KΩ td(on) tr t d(off) tf

12V .2μF VGS
.3μF
10%
-

D.U.T. +VDS

VGS
90%
-3mA
VDS
IG ID
Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms

100
Thermal Response (Z thJA )

D = 0.50

10 0.20

0.10

0.05

0.02 PDM
1
0.01 t1

SINGLE PULSE t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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1000
ID

EAS , Single Pulse Avalanche Energy (mJ)

VDS L
TOP -2.5A
-4.5A
RG D.U.T 800 BOTTOM -5.6A
VDD
IAS A
-20V DRIVER
tp 0.01Ω 600

400
15V

200
Fig 12a. Unclamped Inductive Test Circuit

I AS 0
25 50 75 100 125 150
Starting TJ , Junction Temperature (o C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

tp
V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

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Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-

 **
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" *
VDD
-
• D.U.T. - Device Under Test
VGS*

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[ VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ ISD]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 13. For P-Channel HEXFETS

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SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES MILLIMETERS
DIM
D B MIN MAX MIN MAX
A 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E
0.25 [.010] A E .1497 .1574 3.80 4.00
1 2 3 4
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X e
L .016 .050 0.40 1.27
y 0° 8° 0° 8°

e1 K x 45°
A
C y

0.10 [.004]
8X b A1 8X L 8X c

0.25 [.010] C A B 7

F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.

3X 1.27 [.050] 8X 1.78 [.070]

SO-8 Part Marking

EXAMPLE: T HIS IS AN IRF7101 (MOSFET )

DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
XXXX WW = WEEK
INT ERNAT IONAL F7101 A = AS S EMBLY S IT E CODE
RECT IFIER LOT CODE
LOGO
PART NUMBER

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SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/2011
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