PD - 94826A

IRFZ44VPbF
l Advanced Process Technology HEXFET® Power MOSFET
l Ultra Low On-Resistance D
l Dynamic dv/dt Rating VDSS = 60V
l 175°C Operating Temperature
l Fast Switching RDS(on) = 16.5mΩ
l Fully Avalanche Rated G
l Optimized for SMPS Applications ID = 55A
l Lead-Free S

Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
TO-220AB
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 55
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 39 A
IDM Pulsed Drain Current  220
PD @TC = 25°C Power Dissipation 115 W
Linear Derating Factor 0.77 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 115 mJ
IAR Avalanche Current 55 A
EAR Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 4.5 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.3
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.062 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 16.5 mΩ VGS = 10V, ID = 31A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 24 ––– ––– S VDS = 25V, ID = 31A„
––– ––– 25 VDS = 60V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 67 ID = 51A
Qgs Gate-to-Source Charge ––– ––– 18 nC VDS = 48V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 25 VGS = 10V, See Fig. 6 and 13 „
td(on) Turn-On Delay Time ––– 13 ––– VDD = 30V
tr Rise Time ––– 97 ––– ID = 51A
ns
td(off) Turn-Off Delay Time ––– 40 ––– RG = 9.1Ω
tf Fall Time ––– 57 ––– RD = 0.6Ω, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package G

LS Internal Source Inductance ––– 7.5 –––

and center of die contact S

Ciss Input Capacitance ––– 1812 ––– VGS = 0V

Coss Output Capacitance ––– 393 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 103 ––– pF ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 55
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 220

(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 2.5 V TJ = 25°C, IS = 51A, VGS = 0V „
trr Reverse Recovery Time ––– 70 105 ns TJ = 25°C, IF = 51A
Qrr Reverse Recovery Charge ––– 146 219 nC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 89µH
RG = 25Ω, IAS = 51A. (See Figure 12)
ƒ ISD ≤ 51A, di/dt ≤ 227A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

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1000 1000 VGS
VGS
TOP 15V TOP 15V
10V 10V

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
100 5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100

10

4.5V 4.5V
10
1

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 175 °C
0.1 1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0
RDS(on) , Drain-to-Source On Resistance

ID = 55A
I D , Drain-to-Source Current (A)

2.5
TJ = 25 ° C

100 2.0
(Normalized)

TJ = 175 ° C

1.5

10 1.0

0.5
V DS= 25V
20µs PULSE WIDTH VGS = 10V
1 0.0
4 5 6 7 8 9 10 11 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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IRFZ44VPbF
4000 20
VGS = 0V, f = 1 MHZ ID = 51A V DS= 48V
Cis = Cgs + Cgd, Cds SHORTED V DS= 30V

VGS , Gate-to-Source Voltage (V)

Crss = Cgd V DS= 12V
16
3000 Coss = Cds + Cgd
C, Capacitance(pF)

12

2000
Ciss
8

1000
4
Coss

Crss
0 0
1 10 100 0 20 40 60 80 100
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

TJ = 175 ° C
100
ID , Drain Current (A)

10us
100

TJ = 25 ° C
10 100us

10
1ms
1

TC = 25 °C 10ms
TJ = 175 °C
VGS = 0 V Single Pulse
0.1 1
0.2 0.7 1.2 1.7 2.2 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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RD
60 V DS

VGS
D.U.T.
50 RG
+
V DD
ID , Drain Current (A)

-
40
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30

Fig 10a. Switching Time Test Circuit

20
VDS

10 90%

0
25 50 75 100 125 150 175
TC , Case Temperature ( ° C) 10%
VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature

10
Thermal Response(Z thJC )

1
D = 0.50

0.20

0.10 PDM
0.1 0.05
t1
0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFZ44VPbF
250

EAS , Single Pulse Avalanche Energy (mJ)

15V ID
TOP 21A
36A
200 BOTTOM 51A
L DRIVER
VDS

150
RG D.U.T +
- VDD
IAS A
20V
tp 0.01Ω 100

Fig 12a. Unclamped Inductive Test Circuit

50

V(BR)DSS
tp 0
25 50 75 100 125 150 175
Starting T J, Junction Temperature ( ° C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I AS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

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TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

E XAMPL E : T HIS IS AN IR F 1010
L OT CODE 1789 INT E R NAT IONAL PART NU MB ER
AS S EMB L E D ON WW 19, 2000 R E CT IF IE R
IN T HE AS S EMB L Y L INE "C" L OGO
DAT E CODE
YE AR 0 = 2000
Note: "P" in as s embly line pos ition AS S E MBL Y
indicates "L ead - F ree" L OT CODE WE E K 19
L INE C

Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2010
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