FQB55N10 — N-Channel QFET® MOSFET

November 2013

FQB55N10
N-Channel QFET® MOSFET
100 V, 55 A, 26 mΩ

Description Features
This N-Channel enhancement mode power MOSFET is • 55 A, 100 V, RDS(on) = 26 mΩ (Max.) @ VGS = 10 V,
produced using Fairchild Semiconductor’s proprietary planar ID = 27.5 A
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state • Low Gate Charge (Typ. 75 nC)
resistance, and to provide superior switching performance • Low Crss (Typ. 130 pF)
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power • 100% Avalanche Tested
factor correction (PFC), and electronic lamp ballasts.
• 175°C Maximum Junction Temperature Rating

G G
S D2-PAK

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol Parameter FQB55N10TM Unit

VDSS Drain-Source Voltage 100 V
ID Drain Current - Continuous (TC = 25°C) 55 A
- Continuous (TC = 100°C) 38.9 A
IDM Drain Current - Pulsed (Note 1) 220 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy (Note 2) 1100 mJ
IAR Avalanche Current (Note 1) 55 A
EAR Repetitive Avalanche Energy (Note 1) 15.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
PD Power Dissipation (TA = 25°C) * 3.75 W
Power Dissipation (TC = 25°C) 155 W
- Derate above 25°C 1.03 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering,
TL 300 °C
1/8" from case for 5 seconds

Thermal Characteristics
Symbol Parameter FQB55N10TM Unit
RJC Thermal Resistance, Junction to Case, Max. 0.97
oC/W
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5
RJA 2
Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 40

©2000 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQB55N10 Rev. C1
 FQB55N10 — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FQB55N10TM FQB55N10 D2-PAK Tape and Reel 330 mm 24 mm 800 units

Electrical Characteristics TC = 25°C unless otherwise noted.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 100 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.1 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 100 V, VGS = 0 V -- -- 1 µA
Zero Gate Voltage Drain Current
VDS = 80 V, TC = 150°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 27.5 A -- 0.021 0.026 Ω
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 27.5 A -- 38 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 2100 2730 pF
Coss Output Capacitance f = 1.0 MHz -- 640 830 pF
Crss Reverse Transfer Capacitance -- 130 170 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 25 60 ns
VDD = 50 V, ID = 55 A,
tr Turn-On Rise Time -- 250 510 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 110 230 ns
(Note 4)
tf Turn-Off Fall Time -- 140 290 ns
Qg Total Gate Charge VDS = 80 V, ID = 55 A, -- 75 98 nC
Qgs Gate-Source Charge VGS = 10 V -- 13 -- nC
Qgd Gate-Drain Charge (Note 4) -- 36 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 55 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 220 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 55 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 55 A, -- 100 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs -- 380 -- nC

Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 0.55 mH, IAS = 55 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 55 A, di/dt ≤ 300 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.

©2000 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FQB55N10 Rev. C1
 FQB55N10 — N-Channel QFET® MOSFET
Typical Characteristics

VGS
Top : 15.0 V 2
10
2 10.0 V
10
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
ID, Drain Current [A]

ID, Drain Current [A]

1
Bottom : 4.5 V 10
175℃

1
10
25℃
0
10
※ Notes :
※ Notes :
1. 250μs Pulse Test -55℃
1. VDS = 40V
2. TC = 25℃
2. 250μs Pulse Test

0 -1
10 10
10
-1
10
0
10
1 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

0.12
2
10
Drain-Source On-Resistance

0.09
IDR , Reverse Drain Current [A]

VGS = 10V
RDS(on) [ Ω ],

1
10

0.06 VGS = 20V

0
10
0.03
175℃ 25℃
※ Notes :
1. VGS = 0V
※ Note : TJ = 25℃
2. 250μs Pulse Test

0.00 10
-1

0 60 120 180 240 300 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
ID , Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature

6000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
5000 10
VDS = 50V

VDS = 80V
VGS, Gate-Source Voltage [V]

4000 8
Ciss
Capacitance [pF]

※ Notes :
Coss 1. VGS = 0 V
3000 6
2. f = 1 MHz

2000 4
Crss

1000 2
※ Note : ID = 55A

0 0
10
-1
10
0
10
1 0 10 20 30 40 50 60 70 80

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2000 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FQB55N10 Rev. C1
 FQB55N10 — N-Channel QFET® MOSFET
Typical Characteristics (Continued)

1.2 3.0

2.5
Drain-Source Breakdown Voltage

1.1

Drain-Source On-Resistance
BV DSS , (Normalized)

RDS(ON) , (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V
※ Notes :
2. ID = 250 μA 0.5
1. VGS = 10 V
2. ID = 27.5 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

60
3
10 Operation in This Area
is Limited by R DS(on)
50

2 10 µs
10 100 µs 40
ID, Drain Current [A]

ID, Drain Current [A]

1 ms
10 ms
1 DC 30
10

20

0
10 ※ Notes :
1. TC = 25 C
o
10
o
2. TJ = 175 C
3. Single Pulse
-1
10 0
10
0
10
1
10
2
25 50 75 100 125 150 175

VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
ZJC(t), Thermal Response [oC/W]

0
10

D = 0 .5

※ N o te s :
0 .2 1 . Z θ J C ( t ) = 0 . 9 7 ℃ /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
10
-1 0 .1 3 . T JM - T C = P D M * Z θ JC(t)

0 .0 5

0 .0 2 PDM
0 .0 1
t1
s in g le p u ls e t2
-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

©2000 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FQB55N10 Rev. C1
 FQB55N10 — N-Channel QFET® MOSFET
VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
IG = const.
3mA

Charge

Figure 12. Gate Charge Test Circuit & Waveform

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
V
10V
GS
DUT
td(on) tr td(off)
tf
t on t off

Figure 13. Resistive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

V
10V
GS
GS DUT VDD VDS (t)
tp
tp Time

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

©2000 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FQB55N10 Rev. C1
 FQB55N10 — N-Channel QFET® MOSFET
DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

©2000 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FQB55N10 Rev. C1
 FQB55N10 — N-Channel QFET® MOSFET
Mechanical Dimensions

Figure 16. TO263 (D2PAK), Molded, 2-Lead, Surface Mount

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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002

©2000 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FQB55N10 Rev. C1
 FQB55N10 — N-Channel QFET® MOSFET
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Datasheet contains the design specifications for product development. Specifications
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Rev. I66

©2000 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FQB55N10 Rev. C1