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which you can use to change the world.”

…Nelson Mandela

2
CHAPTER

BJT (Bipolar Junction

Transistor)

1
Level-1 10V

2k
1. The voltage gain of a common emitter
amplifier is [JTO-2002]
(A) directly proportional to collector bias
current
(B) inversely proportional to collector bias 5V
current 1k
(C) independent of collector bias current
(D) proportional to square of collector bias
current (A) active region
(B) saturation region
2. Which of the following will match the items in (C) cut off region
group 1 most appropriately with the items in (D) None of these
group 2
Group 1 Group 2 4. If amplifier has high voltage gain, current gain
1. Emitter bias P. Operating point with low input resistance then it must be
2. Transistor Q. Negative (A) common base amplifier
switch feedback (B) common emitter amplifier
3. Thermal R. Positive feedback (C) common collector amplifier
runaway (D) None
4. Active S. Forward-biased
region base-emitter 5. If the emitter bypass capacitor of the common
junction and emitter amplifier is removed, then
reverse-biased [JTO-2002]
collector-base (A) input resistance will decrease
junction (B) voltage gain will increase
T. Cut-off and (C) voltage gain will decrease
saturation mode (D) voltage gain will remain unaffected
U. Zero VBE and VCE
(A) 1-Q, 2-T, 3-P, 4-S 6. An emitter follower amplifier has
(B) 1-R, 2-T, 3-R, 4-Q [JTO-2002]
(C) 1-U, 2-P, 3-S, 4-R (A) current gain that is always less than 1
(D) 1-T, 2-Q, 3-P, 4-S (B) voltage gain that is always less than 1
(C) very small input impedance
3. The region of operation of the BJT as shown in (D) very large output impedance
the circuit below, if β = 100, |VBE | = 0.7 V and
VCE(sat) = 0.2 V 7. The transistor circuit and its dc load line is
shown in figure a and b.

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 BJT (Bipolar Junction Transistor)
+18V
I1 R I2

R1 Rc 2kΩ
Q1 Q2

R2 RE

(A) I2 = I1
Fig. (a) (B) I2 = βI1
Ic (mA) (C) I2 = [β/(β + 2)]I1
(D) I2 = [(β + 2)/β]I1
7.2
10. The ‘h’ parameter equivalent circuit of a
junction transistor is valid for
4.8 Q point
[JTO -2007]
(A) high frequency, large signal operation
0 6 18 VCE (V) (B) high frequency, small signal operation
Fig. (b) (C) low frequency, large signal operation
(D) None
For the transistor, β = 120. The value of
emitter resistance (R E ) in kΩ at Q-point will
11. The early effect in a BJT is modeled by the
be __________
small signal parameter [DRDO-2008]
(A) ro (B) rπ
8. The lower cut-off frequency of the transistor
(C) g m (D) β
stage in the adjoining figure is
[JTO-2006]
12. For the circuit shown in figure, find the
Va
current I in the 1 kΩ resistor of |VBE = 0.7 and
β = ∞.
3k = R1 10μF = C1 +10V

Vc
Q3 Q6
hfe = 50
hie = 1.1k Rx
2k = R 2 +5V
Vi ~ 10kΩ
1kΩ
I

Q1 Q2 Q4 Q5
(A) 7.95 Hz (B) 13.25 Hz
(C) 5.30 Hz (D) 3.18 Hz
−10V −10V
9. In the adjoining current mirror circuit if Q1 (A) 10 mA (B) 5 mA
and Q 2 are identical and base currents are not (C) 2.86 mA (D) 1.86 mA
negligible, then which of the following is true?
[JTO-2006] 13. For the circuit shown below, the Q-point is
VCEQ = 12 V and ICQ = 2 mA at β = 60. The
value of resistor R C and R B are

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 BJT (Bipolar Junction Transistor)
+24V 18. Each transistor in Darlington pair (as shown
in figure) has hfe = 100. Overall hfe of
composite transistor neglecting leakage
current is, [EC-ISRO-2016]
Rc
RB

(A) 10 kΩ, 241 kΩ (B) 10 kΩ, 699 kΩ

(C) 6 kΩ, 699 kΩ (D) 6 kΩ, 241 kΩ

14. Adding a degeneration resistor R E to a

(A) 10000 (B) 10001
common emitter BJT amplifier will mainly
(C) 10100 (D) 10200
reduce [DRDO-2009]
(A) the voltage gain
19. If impendence (Z) is connected between input
(B) the input impedance
node (base) and output node (collector) in
(C) the amplifier bandwidth
common emitter Amplifier, then the
(D) the output impedance
equivalent resistance (Impedance) at output
node is __________ [Where k is internal gain of
15. For the given circuit, emitter voltage VE = 2 V,
Amplifier]
the value of α is __________
Z
+10V

10kΩ 1 Transistor 2
+ +
E VE = 2V
Vi 3 Vo
B − −
Z Z
(A) (B) 1
C 1−k 1−
k
50kΩ
10kΩ (C) Z (D) Z(1 − k)

20. The advantages of current mirror

−10V (A) it act as a active load in IC Amplifier
(B) it provide high voltage gain
16. A BJT Darlington pair has [DRDO- 2009] (C) it provide high current gain
(A) high input impedance and high β (D) both (A) and (B)
(B) high input impedance and low β
(C) low input impedance and high β Level-2
(D) low input impedance and low β
1. For the circuit shown below β = 99, the value
17. An NPN transistor has a beta cut off frequency
of VCEQ and IE respectively is
fβ of 1 MHz, and a common emitter short
circuit low frequency current gain βo of 200,
its unity gain frequency fT and the alpha cut C1
off frequency fα respectively are Vi C2
[EC-ISRO - 2011] 10μF Vo
(A) 200 MHz, 201 MHz 10μF
R B = 240kΩ
(B) 200 MHz, 199 MHz RE 2kΩ
(C) 199 MHz, 200 MHz
(D) 201 MHz, 200 MHz −20V

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 BJT (Bipolar Junction Transistor)
(A) 19.3 V, 9.65 mA (B) 0.2 V, 9.9 mA (A) R C = 200 Ω, R B = 93 kΩ
(C) 11.68 V, 4.16 mA (D) 11.07 V, 4.46 mA (B) R C = 2 kΩ, R B = 100 kΩ
(C) R B = 83 kΩ, R C = 100 Ω
2. In the circuit shown in figure, β for the BJTs is (D) R C = 20 Ω, R B = 93 kΩ
99. [DRDO-2009]
5. For the CE (Common Emitter) circuit shown,
Vo what will be the value of IE and VCE ?
[EC-ISRO-2017]
VCC = 10V
Vi
R C = 2kΩ IC
200Ω 200Ω
Ri +
R B = 220kΩ
0.8 mA VCE
VBB = 4V Ib + Ic
+
Assuming the thermal voltage to be 50 mV, the −
IB VBE = 0.7V
Ic −
input resistance R i is IE
Ic
(A) 650 Ω (B) 25 kΩ
(C) 40 kΩ (D) 65 kΩ

(A) 3 mA, 3V (B) 4 mV, 4V

3. For the current mirror circuit shown below, if
(C) 3.02 mA, 4.2 V (D) 3.02 mA, 4V
the emitter area of Q 2 is thrice that of Q1 , the
current I is (The transistor is assume to be Si
6. The common-emitter current gain of the
transistor) [EC-ISRO-2013]
transistor is β = 75. The voltage VBE in ON
Vcc = +10V
state is 0.7 V. The value of VC is
I
+5V
20kΩ

10kΩ
Q1 Q2 20kΩ
+ VC
VBE
−

VE = −10V
2kΩ
(A) 0.328 mA (B) 2.895 mA
(C) 0.105 mA (D) 0.012 mA

7. The transistor circuit and its dc load line is

4. A BJT is having common emitter current gain
shown in figure 1 and 2
100. Considering 10 V supply and VBE = 0.7 V.
+16V
The value of R C and R B to set the quiescent
point at IC = 10 mA and VCE = 8 V is
[EC-ISRO-2015]
R1 RC
10V

Rc
RB
R2 1kΩ

Fig. 1

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 BJT (Bipolar Junction Transistor)
IC (mA) (A) 0.1 μA and 0.1 Volt
(B) 0.1 mA and 0.1 m Volt
5.8 (C) 100 μA and 0.1 Volt
(D) 100 μA and 0.1 m Volt

4 Q­point 11. Two perfectly matched silicon transistor are

connected as shown in the figure. Assuming β
of the transistor is very high and the forward
VCE (V) voltage drop in diode to be 0.7 V, the value of
5 16
current I (in μA) is ________ (given VBE = 0.7 V)
Fig. 2
+5V
If the above transistor is working in active 1kΩ
region and β = 100, then the value of R C to
I
establish the above given Q-Point is
Q2 Q1
__________kΩ.

8. If common base current gain (α) is 0.98, then

the value of current gain (β) of common
emitter amplifier and also the reverse −5V
saturation current (ICEO ) of common emitter
amplifier (given that ICBO = 2 μA) is __________. 12. The dc values of IB and IC in the figure shown
(A) 49, 50 μA (B) 49, 100 μA below (given that VCE = 10 V)
(C) 98, 100 μA (D) 49, 200 μA 36V

9. Consider the circuit shown in figure. The value

2.7kΩ
of current IE and voltage Vo is __________
150kΩ 360kΩ
(Assume VT = 26 mV, β is large and reverse Vo
saturation current Is = 6 × 10−16 A) R F1 10μF
10μF
VCC = 2V
Vi
10μF

T1 330Ω 50μF

Vo
1.5V + IE
− 1 kΩ
(A) IC = 5 mA, IB = 10 μA
(B) IC = 10 mA, IB = 10 μA
(A) 775 mA, 775 mV (B) 800 mA, 800 mV (C) IC = 8.56 mA, IB = 18.23 μA
(C) 695 mA, 695 mV (D) 215 mA, 215 mV (D) IC = 8 mA, IB = 19.23 μA
10. In the given transistor circuit shown below,
13. For the circuit shown in figure given that
Vz = 8 V, Vr = 0.7 V and VBE = 0.6 Volt. The
IS = 8 × 10−16 A, β = 100 and VBE = 0.8 V.
emitter current and output voltage of the
The operating point of the BJT is __________
circuit, are respectively
VCC = 2.5V
E
+10V Vo
2kΩ R C = 1kΩ
B 10μA
1kΩ
+ T1
Vz Vr
−

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 BJT (Bipolar Junction Transistor)
(A) IC = 1.5 mA, VCE = 1.5 V 1
ICQ = Isat , (IC )sat = 8 mA, VC = 18 V, β = 110
(B) IC = 10 mA, VCE = 1.5 V 2
(C) IC = 1 mA, VCE = 1.5 V then the value of R E in kΩ is __________
(D) IC = 4 mA, VCE = 1.5 V 28V

RB RC
14. The value of DC bias voltage VC in the circuit
shown in the figure is __________ V VC = 18V

β = 110
1.2kΩ
RE
VC Vo
C1 10μF
Vi β = 45
17. The transistor Q1 and Q 2 are identical as
10μF
100kΩ shown in figure. The value of R so that mirror
current is equal to control current, will be
__________ (Icontrol ) (Where β is given 800,
Imirror = 10.27 mA)
VEE = −9V
10V
(A) −4.48 V (B) 4.48 V
(C) 4 V (D) −4 V
Icontrol Imirror
15. The characteristic of transistor is given as LOAD
shown in figure, the value of VCC , R B and R C R
are respectively
IC (mA)
Q1 Q2
8
Q­point
(IBQ ) = 40μA

VCE
20V 18. The value of the constant current I in the
circuit shown below will be __________mA.
VCC
(Assume β is very large)
I

RB RC

5.1kΩ 5.1kΩ
2kΩ
(IB )Q

(A) 20 V, 482.5 kΩ, 2.5 kΩ −20V

(B) 20 V, 2.5 kΩ, 482.5 kΩ (A) 4.65 mA (B) 5 mA
(C) 10 V, 482.5 kΩ, 2.5 kΩ (C) 4 mA (D) 6 mA
(D) 30 V, 482 kΩ, 3 kΩ
19. A current source circuit is given below, having
16. The emitter bias configuration as shown in the Zener voltage 6.2 V, then the collector current
figure has following specifications (I) is __________ mA. (Assume β is large)

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 BJT (Bipolar Junction Transistor)

I (D) VC

4.37
+
2.2kΩ 6.2V
− 1.8kΩ t

Level-3
−18V
1. In the circuit given below, assume that
VCC = 15 V; Z1 , Z2 , Z3 & Z4 are identical Zener
20. The voltage level at the input of transistor is
diodes with breakdown voltage of
as shown in figure, then the voltage level at
5 V; R1 = R 4 = 5 kΩ, R 2 = R 3 = 10 kΩ. Find
the output of transistor (collector terminal)
Vo when Q1 is OFF. [EC-ISRO-2010]
will be
VCC
Vi VCC = 5V
⇒ V C
5V RC 0.82kΩ R4
R C VC ⇒ ?
0V RB Vo
⇒ hfe = 125
68kΩ R1
Vi Q1 R2 R3
Z3
Z4
Z1 Z2
(A) VC

(A) 7.5 V (B) 5 V

5V
(C) 10 V (D) 8.33 V
5V

t 2. For the circuit shown below, the value of

0V
output voltage Vo , If Vin = A sin ωt is
(B) VC [Given for Q1 , transconductance = g m1 ,
resistance = rπ1 For Q 2 , transconductance = g m2
resistance = rπ2 ]
5V +VCC

RC
t VCC
0V
Vo
(C) VC
Vin Q1

Q2
5V
RE
t

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 BJT (Bipolar Junction Transistor)
RC 5. In circuit shown a silicon transistor having
(A) − 1 ∙ A sinωt
+ [R E ∥ rπ1 ] β = 200 is used. The maximum value of R c for
g m1
which BJT remain in active region is
RC 10V
(B) − 1 ∙ A sinωt
+ (R E ∥ rπ2 )
gm1
RC
RC
(C) − 1 ∙ Asinωt +
+ (R E ∥ rπ2 )
gm2 VCE
RC 100k + −
(D) − 1 ∙ A sinωt 5V VBE
+ (R E ∥ rπ1 ) −
gm2

3. Consider the circuit shown in figure below. (A) 1 kΩ (B) 1.1666 kΩ

+15V (C) 2 kΩ (D) 1.5 kΩ

6. In circuit shown transistor has (β = 30)

R E2 (VBE )sat = 0.8 V and (VCE )sat = 0.2 V. The
2kΩ
R C1 5kΩ region of operation and output voltage if
R B1 100kΩ Vi = 1 V, R1 = 15 kΩ, will be
VC1 Q2
12V
Q1 VC2
2.2kΩ
R C2 Vo
R B2 50kΩ RE 3kΩ 2.7kΩ R1
Vi
Assume that IB2 is negligible then what is the
value of voltage VC1 and VC2 ? Assume that 100kΩ R2
β = 100
VC1 VC2
−12V
(A) 8.6 V 7.62 V
(B) 7.62 V 8.6 V (A) Cut off region, 12 V
(C) 7.90 V 9.62 V (B) Active region, 11 V
(D) 9.62 V 7.90 V (C) Saturation region, 0.2 V
(D) None
4. All transistor as shown in figure, are identical,
then the collector current for Q1 and Q 2 are 7. A transformer coupled amplifier is as shown
+12V in figure, then the slope of DC load line will be
VCC

2mA 3kΩ 2.4kΩ

RB RL

β = 250
Q1 Q2 Q3

(A) Infinite (B) Zero

1 1
(C) (D)
(A) 1.97 mA, 1.97 mA (B) 1.97 mA, 1.5 mA RL RB
(C) 2 mA, 3 mA (D) None

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 BJT (Bipolar Junction Transistor)
8. Consider the circuit shown in figure below, 6V 5.4V
where V1 represents the signal generated by a
microphone, Is = 3 × 10−16 A, β = 100 and Q1 2. 2kΩ R c = 2kΩ
operates in the active mode. Iout Iin = 2mA
(a) If V1 = 0, determine small signal Q1
parameter of Q1 (gm, rπ )
(b) If the microphone generates a 1 mV
signal, how much change is observed in
collector and base current? Assume that Q3
Q2
thermal voltage is 26 mV at room
temperature.
Ic
(A) 1.99 mA, 3.6 mA (B) 1.99 mA, 2.318 mA
+
Q1 Vcc = 1.8V (C) 2 mA, 3.6 mA (D) None
−
+
V1 ~− 11. The voltage gain of amplifier, if transistor have
β = 45, rπ = 3 kΩ, is
800mV 9V

1 2.7kΩ
(A) (a) ( , 375Ω) (b) 0.267mA, 2.67μA 180kΩ
3.75Ω Vo
(B) (a) (266.67m℧, 375Ω) (b) 0.267mA, 0.00267mA
10μF
(C) (a) (0.266℧, 375Ω) (b) 0.267mA, 2.67μA
(D) All of above
10μF
2kΩ
9. In the circuit shown, the transistor has
β = 60. (VBE = 0.7 V). The value of
1. DC voltage (VCE )
Vi ~
2. If β increase by 18% then the change in VCE
(A) −18.78 (B) −39.90
will be
(C) −40 (D) −20
12V

12. Following circuit is given below, where

50k 1k
β = 100 and ro = 50 kΩ, the value of input
impedence, output impedence and voltage
5k
gain are respectively,
(Assume that thermal voltage at room
temperature is 26 mV.)
Vi ~ 12V
R B = 470kΩ R C = 3kΩ
(A) 5.79 V, 7.79% ↓ (B) 5.79 V, 7.79% ↑
(C) 5.33 V, 8% ↑ (D) 5.33 V, 8% ↓ Vo
10μF
10. In the circuit shown transistors are identical, Vi
β = 100
(A) current (Iout ) if Iin is given as 10μF
2 mA β = 100 and VBE = 0.7 V ro = 50kΩ
(B) if R c is changed to 1 kΩ then Iout will be

(A) Zi = 1.07 kΩ, Zo = 2.83 kΩ, AV = −262.05

(B) Zi = 2.83 kΩ, Zo = 1.07 kΩ, AV = −262.05
(C) Zi = 4 kΩ, Zo = 9 kΩ, AV = −262.05
(D) Zi = 2 kΩ, Zo = 4 kΩ, AV = −300

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 BJT (Bipolar Junction Transistor)
13. In the given transistor circuit shown, VCC
resistance R1 is an RTD whose resistance
varies with temperature as R1 = R o (1 + α∆T).
Initially this circuit is kept at Room 150k 4k
0.4μF
temperature (30° C). The change in stability
Vo
factor of this circuit, If the temperature
increases by 10° C is __________
Vi 10k
[Given α at 30℃ is 0.004 /℃]
10V

R1 2k 2kΩ
(A) 28.42 Hz, 47.41 (B) 28.42 Hz, 42.36
(C) 30 Hz, 50 (D) both (A) and (B)
β = 100
VBE = 0.7V 16. In the series voltage regulator circuit shown
below.
VBE = 0.7 V, β = 50, VZ = 8.3 V
R2 8k 1kΩ The output voltage Vo will be __________
+25V Vo

220Ω
20kΩ 50kΩ
14. Determine the magnitude of voltage gain and
input impedance of transistor as shown in
figure [Assume that very large value of C1 and
neglect early effect and 50kΩ 30kΩ
rπ = 50 Ω
g m1 = 80 m℧
VCC
17. An amplifier shown BJT has g m = 50 m℧
R C = 3kΩ rπ = 2 kΩ, Cπ = 10 pF, cμ = 1 pF, ro = 8
Calculate
Vout 1. Input and output capacitance of a BJT
R1 = 1kΩ 2. Higher cut off frequency
β = 50
Vi Q1 VCC
R B = 50kΩ 2kΩ R2 C1
70kΩ 4kΩ

Vo
I1
400kΩ
8kΩ 750pF
(A) 2.24, 140 kΩ (B) 2.24, 152.05 kΩ
(C) 3, 140 kΩ (D) 2.24, 140 kΩ 30kΩ
1kΩ
~V s
15. In amplifier shown BJT has hfe = 50,
hie = 1 kΩ
Calculate
(A) Cin = 1 pF, Cout = 144.5 pF, fH = 79.5 kHz
1. lower 3­dB frequency
2. magnitude of voltage gain at frequency of (B) Cin = 144.5 pF, Cout = 1 pF, fH = 79.5 kHz
10 Hz (C) Cin = 1 pF, Cout = 144.5 pF, fH = 3.35 MHz
(D) Cin = 144.5 pF, Cout = 1 pF, fH = 3.35 MHz

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 BJT (Bipolar Junction Transistor)
18. A BJT is operating at collector current of n1 n2
10 mA. It has β = 50 |Aic | = 10 at 20 MHz (A) 2 2
and Cμ = 5 pF. The values of fβ , fT , Cπ , are (B) 3 3
respectively (C) 2 3
[Given that VT = 26 mV) (D) 3 2
(A) 205 MHz, 4.1MHz, 293.12 pF
(B) 4.1 MHz, 205 MHz, 298.12 pF
(C) 205 MHz, 4.1 MHz, 298.12 pF
(D) 4.1 MHz, 205 MHz, 293.12 pF

19. Following circuit is given below, where

β = 140, then determine the value of re ,
voltage gain (AV ) and current gain (Ai ).
Assume that thermal voltage at room
temperature is 26 mV and also neglect early
effect.
12V

3kΩ
120kΩ 68kΩ
Vo
0.01μF 10μF

Vi
10μF

(A) re = 9.92 kΩ, AV = −287.33, Ai = −138.39

(B) re = 9.92 Ω, AV = −287.33, Ai = −138.39
(C) re = 1.4 kΩ, AV = −287.33, Ai = −138.39
(D) re = 9.92 Ω, AV = −200, Ai = −100

20. An integrated circuit requires two current

sources I1 = 1 mA, and I2 = 1.5 mA. Assuming
that only integer multiple of a bipolar
transistor having IS = (3 × 10−16 )A can be
placed in parallel, and only a single voltage
source VB is available, the minimum number
of unit transistors required for the circuit
are
I1 I2

n1 n2

+
VB
−

Unit transistor

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 BJT (Bipolar Junction Transistor)
VCE = 10 − 2 k × 4.257 mA − 1 k × 4.299 mA
Answer keys and Solutions VCE = −2.813
VCE is (−Ve). So transistor will be in
Level-1 saturation region.

1. [Ans. A] 4. [Ans. B]
AV = −g m R c In common emitter amplifier, the voltage gain
IC and current gain are moderate range so it is
= − RC
VT use as power amplifier. It also having low
input impedance.
2. [Ans. A]
Emitter Bias:
5. [Ans. C]
Emitter bias configuration, also referred to as
self-bias configuration, has an additional 6. [Ans. B]
emitter resistor (R E ) between the emitter
terminal and ground as compared to the fixed
7. [Ans. *]Range: 0.48 to 0.52
bias circuit. The addition of the resistor R E
From the dc load line, we have
provides improved stabilization as it VCEQ = 6 V
introduces a negative feedback into the
ICQ = 4.8 mA
circuit.
β+1
Transistor Switch: IEQ = × ICQ
β
When the transistor is used as a switching
= 4.84 mA
device, it operates either in the saturation or
For dc analysis, we redraw the circuit as
the cut off region. It acts as a closed switch in
+18V
the saturation region and as an open switch in
the cut off.
Thermal Runaway:
The position of operating point of the R1 RC 2kΩ
amplifier determines whether the transistor is + ICQ
inherently stable against thermal runaway or VCEQ
nor. −
Active Region:
In the active region, the emitter-base junction R2 RE
is forward biased and the collector base IEQ
junction is reverse biased. loop 1
Emitter bias - Negative feedback Applying KVL in collector-emitter loop
Transistor - Cut off and saturation (loop 1), we get
switch 18 − ICQ R C − VCEQ − IEQ R E = 0
Thermal run- - Operating point
18 − 4.8 m × 2 k − 6 − 4.84 m × R E = 0
away
18 − 9.6 − 6
Active region - Forward-biased base-emitter So, R E =
junction and reverse-biased 4.84 m
= 0.496 kΩ
collector-emitter junction
8. [Ans. D]
3. [Ans. B]
Apply KVL in inner loop: R1 = 3 k, C1 = 10 μF, R 2 = 2 k
Lower cut-off frequency,
5 − 0.7 − (1 + β)IB × 1k = 0
1
4.3 fL =
IB = = 42.57 μA 2π(R1 + R 2 )C1
(101)1 k
IC = βIB = 4.257 mA 1
=
IE = (1 + β)IB = (101)42.57 μA = 4.299 mA 2π × 5 × 103 × 10 × 10−6
VCE = 10 − 2 k × IC − 1 k × IE fL = 3.18 Hz

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 BJT (Bipolar Junction Transistor)
9. [Ans. C] Step 1: we redraw the given circuit for dc
By KCL analysis as
−I1 + 2IB + IC = 0 +24V
IC = I1 − 2IB ICQ
2IC
IC = I1 −
β Rc
2IC RB +
IC + = I1 IBQ
β VCEQ = 12V
2 VB = VBE +
IC (1 + ) = I1 − β = 60
β VBE = 0.7
β+2 −
IC ( ) = I1
β
β Step 2: From the circuit, the base current (IB )
IC = ( )I is given by
β+2 1
ICQ
Here IC = I2 IBQ =
β β
I2 = I1 ( ) 2
β+2 = = 33.3 μA
60
10. [Ans. B] Step 3: Now, we determine the base resistance
(R B ) as
11. [Ans. A] VCC − VBE
IBQ =
RB
12. [Ans. D] VCC − VBE
=
The figure is given as, RB
+10V 24 − 0.7
= = 33.3 μA
RB
R B = 699 kΩ
Q3 Q6
Step 4: Again, we determine the collector
Rx resistance (R C ) as
+5V I2
10kΩ 24 − VCEQ
I1 1kΩ ICQ = = 2mA
I RC
24 − 12
Q1 Q2 Q4 Q5
RC = = 6 kΩ
2

14. [Ans. A]
−10V −10V After adding a degeneration resistor R E to a
CE BJT, it will act as a −Ve feedback, which
Apply KVL in loop of transistor Q 3 I
will reduce the gain by a factor of (1 + β)R E
10 − 0.7 − I1 × 10 kΩ − 0.7 + 10 = 0
and increase input impedance.
20 − 0.7 − 0.7
I1 = = 1.86 mA
10 kΩ 15. [Ans. *]Range: 0.9 to 0.99
Q 3 and Q 6 transistor are current mirror:
For dc analysis, we redraw the circuit as
I2 ≃ I1 = 1.86 mA
+10V
Q 4 and Q 5 transistor are current mirror:
I2 ≃ I = 1.86 mA 10kΩ IE
+ VE = 2V
13. [Ans. C] IB VEB E
Given emitter to collector voltage, −
VCEQ = 12 V VB
Collector current C
50kΩ
ICQ = 2 mA 10kΩ
Now, we obtain the Base and collector
resistance R B and R C in following steps: −10V

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 BJT (Bipolar Junction Transistor)
From the given circuit, we have I C = I C1 + I C2
VE = 2 V = βIB + βIx
So, the voltage at base terminal is = βIB + β(β + 1)IB
VB = VE − VEB Ic
hfc = = β + β(β + 1)
= 2 − 0.7 = 1.3 V IB
Therefore, the base current is obtained as = 100 + 10100
VB − 0 = 10200
IB =
50 k
1.3 − 0 19. [Ans. B]
= = 26 μA
50 k By miller theorem
From the circuit, we have the emitter current At O/P node (2)
VCC − VE
IE = Z
10 k (Zo ) = ( 1)
10 − 2 1−
k
= = 0.8 mA
10 k
So, we obtain the common emitter current 20. [Ans. D]
gain as
IE = (1 + β)IB
0.8 Level-2
or, 1 + β = = 30.77
26
or, β = 29.77 1. [Ans. C]
β For the given circuit, we determine the value
Thus, α = of VCEQ , IE in the following steps.
1+β
29.77 Step 1: For DC analysis,
= = 0.968
30.77 1. Capacitors are open.
2. AC source are replaced by their internal
16. [Ans. A]
resistance. So, we redraw the given
A BJT Darlington pair is a cascade
circuit as
configuration of a common collector-common
collector, which have high input impedance
IC
and high current gain β.
IB
17. [Ans. A] +
fT = fβ β VCEQ
+ −
= (1 MHz) × 200
VBE −
fT = 200 MHz, IE
β 200 RB 240kΩ
α= = = 0.995 RE
1 + β 201 2kΩ
loop 2
fT 200 MHz 200 MHz loop 1
fα = = =
α α 0.995
−20V
fα = 201 MHz
Step 2: By applying KVL in base emitter loop
18. [Ans. D] (loop 1), we obtain the base current
C −IB (240 kΩ) − VBE − IE R E − (−20) = 0
IC
IB (240 k) + IB (β + 1)2 k = 20 − VBE
I C1 20 − 0.7
I C2 IB =
240 k + (90 + 1)2 k
B = 45.73 μA
Step 3: So, the collector and emitter current
are obtained as
IB IE IC = βIB = 4.12 mA
Ix IE = (β + 1)IB = 4.16 mA
E

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 BJT (Bipolar Junction Transistor)
Step 4: Again, applying KCL in output loop 4. [Ans. A]
(loop 2), we determine the collector to emitter +10V
voltage (VCEQ ) as IB + IC
0 − VCEQ − IE R E − (−20) = 0 IB Ic 1k
VCEQ = 20 − IE R E
RB
= 20 − 4.16 m × 2 k +
VCE
= 11.68 V
−
2. [Ans. D]
Io
Io = 0.8 mA ⇒ IC1 = IC2 = = 0.4 mA
2 β = 100
β β VBE = 0.7 V, Q = (VCE , IC )
rπ = = 1 = re β
gm Applying KVL at input side,
re
VT 50 mV Vcc − IB R B − VBE = 0
re = = = 125 Ω [IE = IC ]
IE 0.4 mA ⇒ 10 − 0.1 mA R B − 0.7 = 0
Using loop equation, Frowde small sign model ⇒ 9.3 = 0.1 mA R B
−Vi + rπ ib + 200ie + 200ie + rπ ib = 0 9.3
RB = kΩ = 93 kΩ
⇒ 2rπ ib + 400ie = Vi 0.1
Applying KVL at output side
⇒ [2rπ + 400(β + 1)]ib = Vi
Vi VCC − IC R C − VCE = 0
⇒ 2[re β + 200(β + 1)] = ⇒ IC R C = VCC − VCE
ib
⇒ R i = 2[125 × 99 + 200 × 100] = 10 − 8
= 64.75 kΩ ≈ 65 kΩ 10 − 8
⇒ RC = kΩ = 200 Ω
10
3. [Ans. B]
5. [Ans. D]
BY KVL at Q1 transistor
VCC = 10V
(Assume β high)
+10V
Ic 2kΩ
IC 1
20kΩ
I +
R B = 220kΩ
Q1 Q2 VCE
Ib + Ic
+ VBB = 4V IB +
− Ic −
0.7

− IE

VE = −10V
10 − 20 IC1 − 0.7 + 10 = 0 Here ′β′ value is not provided so try to solve
20 − 0.7 = 20 IC1 by using options
Let us consider option (D)
19.3
I C1 = 4 − 0.7
20 IB = = 0.02 mA
220 k
I C1 = 0.965 mA
at VCE = 4, IC = 3 mA
I = 3IC1 = 3 × 0.965 So, IE = IC + IB = 3.02 mA
= 2.895 mA (given emitter area of Q 2 is So, option (D) is correct
thrice of Q1 )

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 BJT (Bipolar Junction Transistor)
6. [Ans. *]Range: 1.4 to 1.6 16 − 5 − IE × 1 kΩ
RC =
Given the common emitter current gain of the IC
transistor as β = 75 16 − 5 − 4.04
= = 1.74 kΩ
Step 1: We redraw the given circuit for dc 4 mA
analysis as shown below.
+5V 8. [Ans. B]
IC + IB α = 0.98
ICBO = 2 μA
10kΩ As we know:
IB
β
VC α=
20kΩ IC 1+β
α 0.98
+ β= = = 49
VBE 1 − α 1 − 0.98
− IE ICEO = (1 + β)ICBO
2kΩ = (1 + 49)2 μA
ICEO = 100 μA
Step 2: To determine the collector voltage,
first we determine the collector current 9. [Ans. A]
Applying KVL in base-emitter loop, we have Given reverse saturation current of transistor,
5 − 10 k(IC + IB ) − 20 kIB − VBE − 2 kIE = 0 IS = 6 × 10−16
Thermal voltage, VT = 26 mV
5 − 10 k × 76IB − 20 k × IB − 0.7 − 2k × 76 IB = 0
For dc analysis, we redraw the given circuit as
Thus, we get IB = 4.62 μA
VCC = 2V
IC = βIB = 0.347 mA
Step 3: At the collector terminal, we determine
the voltage as
VC = 5 − 10 k(IC + IB ) T1
+
= 5 − 10 k × 76 × 4.62 × 10−6 VBE
+ Vo
= 1.49 V 1.5V −
− IE
1 kΩ
7. [Ans. *]Range: 1.74 to 1.74
Given Q-point is (5 V, 4 mA), so, VCE = 5 V and
IC = 4 mA Applying KVL at Base-Emitter loop,
+16V 1.5 − VBE − IE × 1 k = 0 ⋯ ①
We know that collector current equation in
transistor is given by
IC RC VBE
I C = I S e VT
R th +
Since, base-emitter voltage is
5V IC
− VBE = VT ln ( )
IE IS
Substituting the value of VBE in equation ①,
Vth 1 kΩ we get
IC
1.5 − 26 × 10−3 ln − IC × 1 k = 0
6 × 10−16
Where R th = R1 ∥ R 2
Since β ≫ 1, so IC ≈ IE . By using hit and trial
R2
Vth = 16 × method,
R1 + R 2
IC = 775 × 10−6 A
IC = 4 mA
So, the voltage at the emitter terminal is
β+1
IE = × IC = 4.04 mA Vo = IE × 103
β
= IC × 103
Taking output loop in the given transistor
= 775 mV
−16 + IC R C + 5 + IE × 1 kΩ = 0

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 BJT (Bipolar Junction Transistor)
10. [Ans. C] At dc condition capacitor is replaced by open-
In the given circuit, the zener diode is in circuit
parallel with normal diode. So, due to low 36V
value of cut in voltage (0.7 V), normal diode
will on first. Zener will remain off for entire 2.7kΩ
operation. 150kΩ 360kΩ
IE IC + IB
+10V Vo IB IC
−
2kΩ 0.6V IE
+ V
B IB
1kΩ (IC + IB )
0.7 330Ω

Apply KVL in inner loop:

Given Vr = 0.7 = VB
36 − (IC + IB )2.7 k − IB (360 k + 150 k)
And VBE = 0.6 Volt
−0.7 − (IC + IB ) 330 Ω = 0
So, VB − VE = 0.6 V
⇒ (IC + IB )2.7 k + IB (510 k)
⇒ VE = VB − 0. 6V
+(IC + IB )0.33 k = 35.3
= 0.7 − 0.6 = 0.1 Volt = Vo
VE 0.1 V 3.03 kIC + 513.03 k IB = 35.3 ⋯ ①
And IE = = = 0.1 mA = 100 μA Apply KVL in outer loop:
1 kΩ 1 kΩ
36 − (IC + IB )2.7 k − 10 − (IC + IB )0.33 k = 0
11. [Ans. A]Range: 3600 to 3600 3.03 kIC + 3.03 kIB = 26 ⋯ ②
As the voltage across the diode is (VA − VC ) = From equation ① and ②, we get that
0 − (−4.3) = 4.3 Volt. So the diode will be on. IC = 8.56 mA
As β → large IB = 18.23 μA
I B1 = I B2 ≈ 0
13. [Ans. C]
Iref 0.7V +5V Given the base to emitter voltage,
VBE = 0.8 V
1kΩ
I1 Reverse saturation current,
I IS = 8 × 10−16 A
Now, we obtain the operating point values in
I B1 I B2 following steps:
Step 1: We redraw the given circuit for dc
analysis as
VCC = 2.5V

−5V IC R C = 1kΩ
∴ Applying KVL 10μA
IB +
Iref × 1 kΩ + 0.7 + 0.7 − 5 = 0 Loop
VCE
⇒ Iref × 1 kΩ = 5 − 1.4 = 3.6 +
3.6 −
⇒ Iref = = 3.6 mA VBE
1 kΩ −
The above circuit is current mirror circuit. So,
Iref = I = 3.6 mA = 3600 μA
Step 2: From the circuit, base current is
IB = 10 μA
12. [Ans. C]
1 So the collector current is obtained as,
Under the dc condition, f = 0, XC = IC = βIB
2πfc
= ∞ (O. C) = 100 × 10 μA = 1 mA

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 BJT (Bipolar Junction Transistor)
Step 3: Now, we determine the collector to 16. [Ans. *]Range: 1 to 1
emitter voltage (VCE ) by applying KVL in 1
(IC )Q = × 8 mA = 4 mA
collector –Emitter loop as 2
VCC − IC R C − VCE = 0 28 − 18 10 V
RC = = = 2.5 kΩ
Step 4: Thus, collector to emitter voltage is (IC )Q 4 mA
obtained as VCC
VCE = VCC − IC R C (IC )sat =
RC + RE
= 2.5 − (1 m × 1 k) = 1.5 V 28
8 mA =
RC + RE
14. [Ans. A]
28
Apply DC condition: capacitor open circuit RC + RE = = 3.5 kΩ
8 mA
R E = 3.5 kΩ − 2.5 kΩ = 1 kΩ
1.2kΩ R E = 1 kΩ

VC 17. [Ans. *]Range: 0.8 to 0.9

10V
β = 45

100kΩ R 1 LOAD
Icontrol
Imirror
I C1 I B1 + I B2

−9V
Apply KVL in inner loop: I B2
I B1
−IB R B − VBE + VEE = 0
VEE − VBE 9 − 0.7
IB = = = 83 μA
RB 100 kΩ
IC = βIB = (45)(83 μA) = 3.735 mA
VC = −IC R C = −(3.735 mA)(1.2 kΩ) IC1 + IB1 + IB2 = Icontrol [Where IB1 = IB2 ]
= −4.48 V IC1 + 2IB1 = Icontrol ⋯ ①
Apply KVL in loop ①
15. [Ans. A] 10 − R × Icontrol − 0.7 = 0
When transistor is at cut off region Icontrol R = 9.3 ⋯ ②
VCE = VCC = 20 V 2IC1
at saturation region (VCE ≅ 0) From equation ① IC1 + = Icontrol
β
VCC 20 2
IC = = IC1 (1 + ) = Icontrol
RC RC β
20 IC1 = IC2 (Imirror )[Because both transistors are
8 mA =
RC identical]
R C = 2.5 kΩ
Icontrol
VCC − VBE Imirror = ( 2 )
RB = 1+
IB β
9.3
20 − 0.7 ( )
RB = = 482.5 kΩ R
10.27 mA =
40 μA (1 +
2
)
100
VCC = 20 V, R B = 482.5 kΩ, R C = 2.5 kΩ 9.3
10.27 mA =
R(1.02)
R = 887.79 Ω
R = 0.887 kΩ

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 BJT (Bipolar Junction Transistor)
18. [Ans. A] 2. [Ans. B]
(5.1 kΩ)(−20 V) Vi + Vi
VB = = −10 V VT1
(5.1 kΩ + 5.1 kΩ) IB r − g m1 Vπ1
π1
VE = VB − 0.7 V = −10 V − 0.7 V = −10.7 V RC

VE − (−VEE ) −10.7 + 20
I = IE = = +
RE 2 kΩ RE VT2
rπ 2 − g m2 Vπ2
I = 4.65 mA

19. [Ans. *]Range: 3.0 to 3.1

Redrawing the above circuit
As this circuit is constant current source
Vi + Vo
IC = IE Vπ1
IE = IC = I rπ − g m1 Vπ1
1
Apply KVL in inner loop
Vπ
6.2 − 0.7 − IE × 1.8 kΩ = 0 ( + g m1 Vπ1 ) RC
rπ 1
5.5 − I × 1.8 kΩ = 0
I = 3.05 mA RE rπ 2

20. [Ans. A]
When VL = 0 V (logic 0)
Transistor off (cut off region) Vo = −g m1 Vπ1 × R C
VC = 5 V (logic 1) Vπ
Vi = Vπ1 + ( 1 + g m1 Vπ ) (R E ∥ rπ2 )
When Vi = 5 V (logic 1) rπ 1
Transistor ON (saturation region) Vo −g m1 R C
AV = =
VC ≃ 0 (logic zero) Vi 1 + ( + g ) (R ∥ r )
1
m1 rπ1 E π2
Vo
−g m1 R C
∴ Vo = ∙ A sinωt
1
1+( + g m1 ) (R E ∥ rπ2 )
rπ1
5V −R C A sin ωt
= 1
+ (R E ∥ rπ2 )
gm1
VC = t
0V
3. [Ans. A]
For the given circuit, we determine the value
Level-3 of VC1 , VC2 in the following steps.
Step 1: for analyzing this circuit, break the
1. [Ans. C] circuit and then solve in parts. We draw the
IC = 0 (became Q1 is off) modified circuit for part 1 as
Apply KCL at collector node, +15V
Vo − 15 Vo − 5 Vo − 5
+0+ + =0
5k 10 k 10 k
1 1 1 1 1 R C1
Vo ( + + )=3+ + R B1 100kΩ 5kΩ
5 10 10 2 2
10 + 5 + 5
Vo ( )=4
5 × 10
4 × 5 × 10
Vo = = 10 V R B2 50kΩ
20 3kΩ
RE

Given circuit

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 BJT (Bipolar Junction Transistor)
+15V Step 7: To determine the VC2 , first we
determine the collector current IC2 as
VE2 = VC1 + VEB2
5kΩ = 8.6 V + 0.7 V
IC1 = 9.3 V
R th = 33.33kΩ
15 − VE2
+ IE2 =
+ R E2
VBE 15 − 9.3
Vth = 5V − =
RE 3kΩ 2k
−
Loop 1 = 2.85 mA
β
Modified circuit IC2 = ×I
1 + β E2
Step 2: The modified circuit parameters are 100
obtained as = × 2.85 mA
101
R th = R B1 ∥ R B2 = 2.82 mA
= 100 k ∥ 50 k Step 8: Thus, collector voltage VC2 is obtained
= 33.33 kΩ as
R B2
vth = × VCC VC2 = IC2 R C2
R B1 + R B2 = 2.82 m × 2.7 k
50 k
= × 15 = 7.62 V
50 k + 100 k
=5V
4. [Ans. A]
Step 3: Applying KVL in loop 1, we obtain base
+12V
current as
Vth − IB1 R th − VBE − IE R E = 0
Vth − VBE
IB1 = 2mA 3kΩ 2.4kΩ
R th + (β + 1)R E
Ix
5 − 0.7 C1
= ⇒ 0.0128 mA IC 1
33.33 k + 101 × 3 k β = 250
B
Step 4: So, the collector and emitter currents Q2 Q3
Q1 I B1 I B2
are given by
IC1 = βIB1 = 1.28 mA
IE1 = (1 + β)IB1 = 1.29 mA
I B3
Step 5: Therefore, the voltage at collector
terminal of transistor T1 is
VC1 = 15 − IC1 R C1
At node B: Ix = IB1 + IB2 + IB3
= 15 − 1.28 × 5
[IB1 = IB2 = IB3 ] all transistor are identical
= 8.6 V
Ix = 3IB1 ⋯ ①
Step 6: Now, we draw the complete circuit as
VCC = 15V At node C1 : 2 mA = IC1 + Ix
= IC1 + 3IB1
3
R E2 2kΩ IE2 2 mA = IC1 (1 + )
R C1 5kΩ β
R B1 100kΩ IB2 VEB2 + VE2
I C1 =
2 mA
− Q 3
8.6V = VC1 2 (1 + )
IC1 β

Q1 VC2 2 mA
VB = 5V + I C1 = 3
= 1.97 mA
V = 4.3V (1 + )
VBE1 − E1 IC2 250
R B2 50kΩ R C2 2.7kΩ As all transistor are identical so
IE
R E = 3kΩ I C1 = I C2 = I C3
= 1.97 mA

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 BJT (Bipolar Junction Transistor)
5. [Ans. A] 7. [Ans. A]
Assume BJT is in saturation region In DC condition
(VBE sat ) = 0.7 f=0
XL = 2πf L = 0 (S. C)
5 − 0.7
(IB ) = = 0.043 mA VCC
100 k
10 − (VCE )sat 10 − 0.2 9.8
(IC )sat = = =
RC RC RC IC RL
RB
(IC )sat 9.8 +
(IB )min = =
β 200 R C VCE
To remain in active region: −
(IB ) < (IB )min
9.8
0.043 mA <
200 R C
KVL in collector loop:
R C < 1.1395 kΩ
VCC − IC xo − VCE = 0
According to option R C = 1 kΩ
↓
(Internal resistance of primary winding is zero)
6. [Ans. A]
VCE = VCC
12V
x = k ⇒ For transformer coupled amplifier DC
2.2kΩ load line is a vertical line. It has infinite slope
Vo IC
15kΩ
Vi = 1V
IB
I1
VBE 100kΩ ⇒ DC load line
I2
VBE
−12V
VCE
Assume BJT is in saturation (VBE )sat = 0.8 V VCC
I1 = IB + I2
IB = I1 − I2 8. [Ans. D]
1 − 0.8 0.8 + 12 VBE
IB = ( )−( ) (a) As we know IC = Is e
15 k 100 k VT
800 mV
IB = −0.114 mA IC = 3 × 10−16 e = 6.92 mA
26 mV
−Ve IB indicate that BJT is in cut off region to
[From figure VBE = 800 mV]
verify whether BJT is in cut off region or not, IC 6.92 mA 1
base voltage should be calculated by assuming gm = = = 0.266 ℧ =
VT 26 mV 3.75 Ω
BJT as off by taking β 100
IB = 0 R1 ⁄R 2 are connected in series [I1 = I2 ] and rπ = = = 375 Ω
g m (1/3.75)
(V1 × 100 k) + (−12) × 15 k
VB = = −0.69 V (b) Drawing small signal equivalent of circuit
15 + 100 as shown below:
Since (−Ve) voltage is present at P type base,
iB iC
BJT will be in cut off region.
When BJT is in off condition. All BJT current
+
are zero +
IC = 0
V1 ~ rπ Vπ g m Vπ
− −
Vo = 12 − 2.2 IC
Vo = 12 V

From figure Vπ = V1 = 1 mV
Change in ΔIC = g m V1

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 BJT (Bipolar Junction Transistor)
1 mV 10. [Ans. B]
Collector Current ΔIC =
3.75 Ω 6V 5V
ΔIC = 0.267 mA
2. 2kΩ R C = 2kΩ
The change in base current as:
V1 1 mV Iout Iin = 2mA
ΔIB = = = 2.67 μA
rπ 375 Ω loop ①
Q1 B
ΔIB = 2.67 μA I B1
Option (D) is correct answer.
IE 1 I C3
A
9. [Ans. A] I C2
I B2 + I B3
In DC analysis, capacitor is (O.C)
Q2 Q3
12V I B2 I B3

1k
50k
(IC + IB )
IC Here Q 2 and Q 3 are current mirror circuit
IB At node A: IE1 = IC2 + IB2 + IB3
IE1 = IC2 + 2IB2
IC
I E 1 = I C2 + 2 2
β
2
IE1 = IC2 (1 + )
β
Apply KVL in inner loop:
12 − 1 k(IC + IB ) − 50 kIB − 0.7 = 0 IE1
(IC2 = 2) ⋯①
IC = βIB = 60IB 1+
β
12 − 1 k × 61 IB − 50 kIB − 0.7 = 0 Transistor Q 2 ⁄Q 3 are identical
11.3 I C2 = I C3
IB = = 0.102 mA
(61 + 50)k IE1
I C3 = 2
VCE = 12 − 1 k (IC + IB ) 1+
β
VCE = 12 − 1 k × 61 IB Apply KCL at node B:
VCE = 12 − 1 k × 61 × 0.102 mA Iin = IB1 + IC3
VCE = 5.79 V
IE 1
If β is increase by 18% Iin = IB1 + ( 2)
1+
18 β
β = 60 + 60 × = 70.8 1
100 IC IC1 (1 + )
β
VCE = 12 − (IC + IB )1 k Iin = 1 + 2
β (1 + )
IC = βIB = 70.8 × IB β

VCE = 12 − 71.8 IB × 1 k … ① 1 (β + 1)
Iin = IC1 [ + ]
β β+2
Apply KVL in inner loop
IC1 = Iout
12 − 1 k × (IB + IC ) − 50 kIB − 0.7 = 0
1 β+1
IB = 0.092 mA Iin = Iout ( + )
β β+2
Put in equation ① Iin
VCE = 12 − 71.8 × 0.092 m × 1 k Iout = 2
1+
β(2+β)
VCE = 5.339 V
Iin 2 mA
5.339 − 5.79 Iout = 2 = 2
% ∆VCE = ( ) × 100 = −7.79% 1+ 1+
5.79 β(2+β) 100(100+2)

VCE ⇓ by 7.79% Iout = 1.99 mA

② R C is varied to 1 kΩ
Then Iin change.

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 BJT (Bipolar Junction Transistor)
5 − 1.4 Ic
Iin = = 3.6 mA Vi Vo
1k IB Io
Iout ≃ Iin . Voltage drop across 2.2 k is exceed
470kΩ rπ βIB Io 3kΩ
supply voltage 6 V as a result of VCE of
= 1.08kΩ
transistor Q1 will become −Ve and Q1 enter Zi Zo
into saturation region.
(VCE )1 = (VCE )1 sat = 0.2 V
Apply KVL in loop 1: Zi = 470 kΩ ∥ 1.08 kΩ = 1.07 kΩ
6 − 2.2 k × Iout − 0.2 − 0.7 = 0 Zo = ro ∥ 3 kΩ = 50 kΩ ∥ 3 kΩ = 2.83 kΩ
Iout = 2.318 mA Voltage gain (AV ):
Vo = Io × 3 kΩ
11. [Ans. A]
Vo = −IC × 3 kΩ ⋯ ①
Apply miller theorem:
Vo IC × 3 kΩ
9V IC = βIB + = βIB −
ro 50 kΩ
2.7kΩ 10μF 3
IC (1 + ) = 100 × IB
50
10μ Vo
100 × IB
180kΩ IC = 3
Rn = 1
(1 + )
50
2kΩ 180 k (1 − )
Rm Av
From equation ①:
1 − AV
~V i Vo = −IC × 3 kΩ
−100 × IB × 3 kΩ
AV = Internal gain of BJT Vo = 3
(1 + )
180 kΩ 50
−hfe Rn = 1 ≃ 180 kΩ −100 × Vin × 3 kΩ Vin Vin
′ 1−
Av = × RL [ ] Vo = 3
[IB = = ]
hie Av
1.08 kΩ (1 + ) rπ 1.08 kΩ
R L = 2. 7 k ∥ 180 k 50

−45 Vo
Av = × 2.66 kΩ = AV = −262.05
3 kΩ Vin
Av = −39.90 Option (A) is correct.
180 k 180 k
Rm = = = 4.4 kΩ 13. [Ans. *]Range: 0.04 to 0.05
1 − AV 1 + 39.90
At room temperature
R L′ = hie ∥ R m
And the circuit becomes
= 3 k ∥ 4.4 = 1.78 kΩ +10V
Vo Av × R i −39.90 × 1.78
A VS = = =
Vi R s + R i 2 + 1.78
IC 2k
= −18.78

12. [Ans. A] 1.6k

Apply DC analysis:
VCC − 0.7 12 − 0.7 IB + IE = (1 + β)IB
IB = = = 24.04 μA −
RB 470 kΩ 0.7
8V 1k
IC = βIB = 100 × 24.04 μA = 2.404 mA
IC 2.404 mA
gm = = = 92.5 m℧
VT 26 mV
β 100 Taking i/p loop equation
rπ = = = 1.08 kΩ −8 V + 1.6 kIB + (1 + β)IB × 1k + 0.7 = 0
g m 92.5 m℧
Replace BJT with small signal model: 7.3
IB =
1.6 k + 101 k
= 71.15 μA

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 BJT (Bipolar Junction Transistor)
i⁄p loop equation Vo −(R C ∥ R1 )
= 1 RB
−8 + 1.6 kIB + IC × 1 k + IB × 1 k + 0.7 = 0 Vin + R2 + ( )
gm β+1
Diff. the above equation with respect to IC
dIB dIB −(3 ∥ 1)k 50 k
0 + 1.6 k +1k+1k∙ +0=0 = 1 + 2k +
dIC dIC 51
80 m℧
dIB −1 k −1 Vo
= = = −2.24
dIC 2.6 k 2.6 Vin
1+β 1 + 100
∴ S30℃ = = |Av | = 2.24
dIβ 1
1−β∙ | 1 + 100 × R in = R B + rπ + (1 + β)R 2
dIC 30℃ 2.6

101 = 50 k + 50Ω + 51 × 2 k
S30℃ = 100 ≈ 2.56
1+ R in = 152.05 kΩ
2.6
At 40℃: R1 becomes,
R1 = 2 k[1 + 0.004(10)] 15. [Ans. A]
= 2 k × 1.04 −hfe R′′L −50 (10 k ∥ 4 k)
A Vm = = = −142.85
= 2.08 k hie 1k
Now i/p loop equation at low frequency, large capacitor (Coupling
+10V capacitor) offer medium reactance.
1 1
fL = =
2k (R
2πcc C + R L ) 2π × 0.4 μF(4 k + 10 k)
= 28.42 Hz
R th = (2.08k ∥ 8k) |Avm | 142.85
(AV )10 Hz = =
2 2
= 1.65k + √1 + (fL ) √1 + (28.42)
f 10
0.7
Vth −
= 47.41
1k

16. [Ans. *]Range: 15 to 15

−Vth + 1.65 kIB + 0.7 + IB × 1k + IC × 1k = 0 In this circuit, zener diode works as a voltage
dIB regulator. So, the equivalent circuit is drawn
0 + (1.65 k + 1k) + 0 + IC k = 0
dIC as
dIB −1 k +25V Vo
=
dIC 2.65 k 50kΩ 30kΩ
1 + 100 220Ω 20kΩ
∴ S40° = 100 = 2.6074 220Ω 50kΩ
1+ Vz = 8.3V 220Ω
2.65 VBE − +
Change in ′S ′ = [2.6074 − 2.56] = 0.0479 V1 =
+ VBE + Vz
14. [Ans. B] VBE 50kΩ
V 30kΩ
1 = 0.7
Large value of capacitor, XC = = 0(S. C) 30kΩ −
large
From the circuit, we have
It is connected to ground
V1 = VBE + Vz
Neglect early effect: ro = 8
= 0.7 + 8.3 = 9 V
VCC
Using voltage divider rule, we get
30 k
RC 3kΩ V1 = V
20 k + 30 k o
Vo 5
RB or Vo = × 9 = 15 V
β = 50 R1 1kΩ 3
Vi Q1
50kΩ 17. [Ans. B]
R2 Draw SSM of HFR
RL′ = 8k ∥ 4k = 2.67 kΩ
2kΩ AV = −g m R′L

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 BJT (Bipolar Junction Transistor)
= −50 m℧ × 2.67 kΩ β 140 140
rπ = = I = 2.59 mA = 1.4 kΩ
= −133.5 gm ( C ) ( )
VT 26 mV
Cin = Cπ + cμ(1 − AV )
= 10 pF + 1 pF (1 + 133.5) rπ 1.4 kΩ
re = = = 9.92 Ω
= 144.5 pF 1+β 141
Cout ≅ Cμ = 1 pF Apply AC analysis:
Ib Ic Io
② If Csh is considered. Vin Vo
1
f H1 = Ii
2πR L Csh 120kΩ 1.4kΩ βIB 68kΩ 3kΩ
Csh = 750 pF
1
f H1 =
2π × 2.67 × 103 × 750 × 10−12
fH1 = 79.47 kHz Voltage Gain (AV ):
If Cin is considered Vo = Io × (3 kΩ ∥ 68 kΩ)
1 Vo = −IC × (68 ∥ 3) = −βIb (68 ∥ 3)
f H2 =
2πRCin Vin
Vo = −140 × (68 ∥ 3)kΩ
R = R S ∥ R B ∥ rπ 1.4 kΩ
= 400 ∥ 70k ∥ 30k ∥ 2 kΩ Vo
AV = = −287.33
R = 328 Ω Vin
1 Current Gain (Ai ):
f H2 =
2π × 328 × 144.5 × 10−12 Io = −IC
= 3.35 MHz Io = −βIb
fH Ii × 120
f H1 < 2 Io = −140 ×
4 (120 + 1.4)
Net fH = fH1 = 79.5 kHz Io
Ai = = −138.39
Ii
18. [Ans. B] Option (B) is correct answer.
fβ = 4.1 MHz , fT = 205 MHz, Cπ = 293.12 pF
IC 10 20. [Ans. C]
gm = = = 0.384 ℧ Since, we have only integer multiple of a unit
VT 26
β 50 transistor, we need to find the largest number
Aie = = that divides both I1 and I2 evenly (i.e. we need
2 2
f 20 to find largest x such that I1 /x and I2 /x are
√1 + ( ) √1 + ( )
fβ fβ
integer). This will ensure that we use the
50 fewest transistors possible. In this case, it is
10 =
2 easy to see that we should pick current I as
20
√1 + ( ) I = HCF (I1 , I2 )
fβ
= HCF(1 mA, 1.5 mA)
fβ = 4.1 MHz = 0.5 mA
fT = βfβ = 50 × 4.1 MHz = 205 MHz i.e. each transistor should have 0.5 mA flowing
gm through it for minimum number of unit
fβ =
2π(Cπ + Cμ ) transistor. Therefore, I1 should be made up of
0.384 1 mA
Cπ + Cμ = = 298.12 pF = 2 parallel transistor and I2 should be
0.5 mA
2π × 205 × 106 1.5 mA
Cπ = 298.12 pF − 5 pF = 293.12 pF made up of = 3 parallel transistor. This
0.5 mA
Cπ = 293.12 pF is shown in the following circuit diagram.

19. [Ans. B] 1 mA 1.5 mA

0.5 mA 0.5 mA 0.5 mA 0.5 mA 0.5 mA
Apply DC analysis:
12 − 0.7
IB = = 18.5 μA +
(120kΩ + 68kΩ) + (141 × 3kΩ)
VB
IC = 18.5 μA × 140 = 2.59 mA −

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