Centre for Advanced Studies in Engineering, Islamabad

EE2301 Electronic Devices and Circuits (4Th Semester)

Center for Advanced Studies in Engineering, Islamabad

Electronics Lab

Electronic Devices & Circuit Lab

Experiment No.08: Characteristics of Bipolar Junction Transistor (BJT)

Name of Student: ……………………………………………………..

Roll No.: ……………………………………………………………….

Class Section: …………………………………………………………

Date of Experiment: ………………………………………………….

Report submitted on: …………………………………………………

Marks obtained: …………………………………

Instructor’s Signature: …………………………..

Experiment No.08: characteristics of BJT Page|1

 Centre for Advanced Studies in Engineering, Islamabad
EE2301 Electronic Devices and Circuits (4Th Semester)
Objectives
1. To study the types and schematic symbols of Bipolar Junction Transistors (BJTs).
2. To study the circuit configurations of BJTs.
3. To study specifications of transistors.
4. To identify the terminals of BJTs using DMM.
5. To study the output characteristics of common emitter configuration of both NPN and
PNP transistors.
6. To study operating regions of NPN and PNP transistors.

Background Information
Transistors are three terminal active devices made from different semiconductor materials that
can act as either an insulator or a conductor by the application of a small signal voltage. The
transistor's ability to change between these two states enables it to have two basic functions:
"switching" (digital electronics) or "amplification" (analogue electronics).

There are two basic types of bipolar transistor construction, PNP and NPN, which basically
describes the physical arrangement of the P-type and N-type semiconductor materials from
which they are made.

The Bipolar Transistor basic construction consists of two PN-junctions producing three
connecting terminals with each terminal being given a name to identify it from the other two.
These three terminals are known and labeled as:

 Emitter (E)
 Base (B)
 Collector (C)

Bipolar Transistors are current regulating devices that control the amount of current flowing
through them in proportion to the amount of biasing voltage applied to their base terminal
acting like a current-controlled switch. The principle of operation of the two transistor types
PNP and NPN, is exactly the same the only difference being in their biasing and the polarity
of the power supply for each type.

The construction and circuit symbols for both the PNP and NPN bipolar transistor are given
in Fig. 2.1 with the arrow in the circuit symbol always showing the direction of "conventional
current flow" between the base terminal and its emitter terminal. The direction of the arrow
always points from the positive P-type region to the negative N-type region for both transistor
types, exactly the same as for the standard diode symbol.

PNP Transistor NPN Transistor

Emitter (E ) P N P Collector (C ) Emitter (E ) N P N Collector (C )

Base(B) Base(B)
Physical construction Physical construction

Experiment No.08: characteristics of BJT Page|2

 Centre for Advanced Studies in Engineering, Islamabad
EE2301 Electronic Devices and Circuits (4Th Semester)
C C

V BC VCB IC
IC
IB IB
B V EC B VCE

V BE IE
VEB IE
E
E
Figure 2.1
2.1 Biasing of BJTs
Biasing of a BJT can be defined as a set of certain DC voltages that exist across its three
terminals (Base, Emitter and Collector) and the corresponding DC currents that flow through
them. Biasing is essential if it is needed to use a BJT as an amplifier. For this it must be ensured
that the BJT is in its active region. Tables 2.1 and 2.2 define conditions for various operating
regions of BJT transistors. Table 2.3 shows different voltages across BJT terminals for the
distinct operating regions.

B-C Junction Bias

Applied voltages B-E Junction Bias (NPN) Mode (NPN)
(NPN)
𝐸 < 𝐵 < 𝐶 Forward Reverse Forward-active

𝐸 < 𝐵 > 𝐶 Forward Forward Saturation

𝐸 > 𝐵 < 𝐶 Reverse Reverse Cut-off

𝐸 > 𝐵 > 𝐶 Reverse Forward Reverse-active

Table 2.1:____________________________
B-C Junction Bias
Applied voltages B-E Junction Bias (PNP) Mode (PNP)
(PNP)
𝐸 < 𝐵 < 𝐶 Reverse Forward Reverse-active

𝐸 < 𝐵 > 𝐶 Reverse Reverse Cut-off

𝐸 > 𝐵 < 𝐶 Forward Forward Saturation

𝐸 > 𝐵 > 𝐶 Forward Reverse Forward-active

Table 2.2:____________________________

Saturation Region Active Region Cut Off Region

Semi-conductor
Material 𝑉𝐶𝐸(𝑠𝑎𝑡) 𝑉𝐵𝐸(𝑠𝑎𝑡) 𝑉𝐵𝐸(𝑚𝑖𝑛) 𝑉𝐵𝐸(𝑚𝑎𝑥) 𝑉𝐵𝐸(𝑐𝑢𝑡 𝑜𝑓𝑓)
(𝑉) (𝑉) (𝑉) (𝑉) (𝑉)
Si 0.2 0.8 0.5 0.60.7 <0.5
Ge 0.1 0.3 0.1 0.2 <0.1
Table 2.3:_____________________________

Experiment No.08: characteristics of BJT Page|3

 Centre for Advanced Studies in Engineering, Islamabad
EE2301 Electronic Devices and Circuits (4Th Semester)

When the transistor is being used as an amplifier, it is biased in its active region. Fig 2.2 and
2.3 show such bias arrangements, for NPN and PNP transistors each, to place the transistors in
active regions. Notice that in both cases, the BE-junction is forward biased and the BC-junction
is reverse biased.

2.2 Output Characteristics and Operating Regions of BJTs

The output characteristics and operating regions for common emitter configuration of NPN
transistor are shown in Fig 2.2.
IC

B C

Saturation
Breakdown
Re gion Active Re gion
A Re gion
VCE
0 0 .7 V VCE (max)

Fig 2.2:______________________________

Cut Off Region

If 𝑉𝐵𝐵 is less then 0.5 V, base-emitter junction (BEJ) will conduct negligible current. In fact
BEJ could be considered reverse biased. And for 𝑉𝐶𝐶 equal to or greater then zero the BCJ is
also reverse biased, so the transistor is in the cut off region. In cut off region, 𝐼𝐵 = 0 and 𝐼𝐶 is
also negligibly small, mainly due to thermally generated carriers, this collector current is called
collector leakage current 𝐼𝐶𝐸𝑂 .

Saturation Region
Assume that 𝑉𝐵𝐵 is set to produce certain value of 𝐼𝐵 and 𝑉𝐶𝐶 is zero. For this condition both
the BEJ and BCJ are forward biased. The transistor is said to be in the saturation region of
operation. As 𝑉𝐶𝐶 is increased 𝑉𝐶𝐸 will increase gradually as collector current increases
(segment between A and B of Fig 2.2).

Active Region
Ideally, when 𝑉𝐶𝐸 exceeds 0.7V, BCJ becomes reverse-biased and the transistor goes into the
active or linear region of its operation. In active region 𝐼𝐶 essentially becomes constant as𝑉𝐶𝐸
continues to increase. This is shown by the portion of the curve between points B and C .

Reverse-active (or inverse-active or inverted) Region

By reversing the biasing conditions of the forward-active region, a bipolar transistor goes into
reverse-active mode. In this mode, the emitter and collector regions switch roles. Because most
BJTs are designed to maximize current gain in forward-active mode, the 𝛽𝐹 in inverted mode
is several (2–3 for the ordinary germanium transistor) times smaller. This transistor mode is
seldom used, usually being considered only for failsafe conditions and some types of bipolar
logic. The reverse bias breakdown voltage to the base may be an order of magnitude lower in
this region.
Experiment No.08: characteristics of BJT Page|4
 Centre for Advanced Studies in Engineering, Islamabad
EE2301 Electronic Devices and Circuits (4Th Semester)
Breakdown Region

When 𝑉𝐶𝐸 reaches at a sufficiently high voltage, the reverse biased BCJ goes into breakdown;
and the collector current increases rapidly as indicated by the right most part of the curve (curve
on right side of point C in Fig 2.2). A transistor should never be operated in this breakdown
region.

2.3 Bipolar Transistor Configurations

As the Bipolar Transistor is a three terminal device, there are basically three possible ways to
connect it within an electronic circuit with one terminal being common to both the input and
output. Each method of connection responding differently to its input signal within a circuit as
the static characteristics of the transistor varies with each circuit arrangement.

Experimental Work
3.1 Equipment and Components Required

1. DC Power Supply (2)

2. DMM
3. Breadboard
4. Transistors:
i. 2𝑁3904 (𝑁𝑃𝑁)
ii. 2𝑁3906 (𝑃𝑁𝑃)
5. Resistors:
i. 1 𝑘Ω (𝑴𝒆𝒂𝒔𝒖𝒓𝒆𝒅 𝒗𝒂𝒍𝒖𝒆: ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ )
ii. 10𝑘Ω (𝑴𝒆𝒂𝒔𝒖𝒓𝒆𝒅 𝒗𝒂𝒍𝒖𝒆: ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ )
iii. Potentiometer: 10 𝑘Ω
6. Connecting wires, etc.

Procedure
PART-1: Output Characteristics of BJTs (Common Emitter Configuration)

1. Using the pin configuration of Fig 3.1 connect the circuit as shown in Fig 3.2.
2. Set 𝐕𝐂𝐂 = 𝟏𝟎 𝐕.
3. Now adjust the base current 𝐼𝐵 = 10 𝜇𝐴 by changing 𝑉𝐵𝐵.
4. Now for the measurements of the values of Table 3.1 at base current 𝐼𝐵 =
10 𝜇𝐴 (𝑑𝑜𝑛𝑜𝑡 𝑐ℎ𝑎𝑛𝑔𝑒 𝑉𝐵𝐵 ), obtain the values of 𝑽𝑪𝑬 (as indicated in Table 3.1) by
changing 𝑉𝐶𝐶 .
5. Now repeat the procedure steps 2-4 for the base current 𝐼𝐵 = 30 𝜇𝐴.
6. Plot the output characteristics between 𝑽𝑪𝑬 and 𝑰𝑪 for 𝐼𝐵 = 10 𝜇𝐴 and 𝐼𝐵 =
30 𝜇𝐴 in the graph of Fig. 3.5 using the same axes.
7. Now reconnect the same circuit for the PNP transistor. Remember to reverse
the power supply polarity for correct connections. Repeat the above procedure
steps 2-5 for PNP transistor.
8. Now plot the output characteristics between 𝑉𝐶𝐸 and 𝐼𝐶 for 𝐼𝐵 = 10 𝜇𝐴 and
𝐼𝐵 = 30 𝜇𝐴 in the graph of Fig. 3.6 using the same axes.
Experiment No.08: characteristics of BJT Page|5
 Centre for Advanced Studies in Engineering, Islamabad
EE2301 Electronic Devices and Circuits (4Th Semester)

RC
2 N 3904
NPN
1 k
RB

VCC
 10 k 
VBB 

E B C

Fig 3.2:_________________________________
Fig 3.1 (Pin
diagram)

RC
2 N 3906
PNP 1 k
RB

VCC
10 k 
VBB 


E B C
Fig 3.3 (Pin Fig 3.4:__________________________
diagram)
Output Characteristics of BJTs

𝑰𝑪 @ 𝑰𝑩 = 𝟏𝟎 𝝁𝑨 𝑰𝑪 @ 𝑰𝑩 = 𝟑𝟎 𝝁𝑨
𝑽𝑪𝑬 (𝒎𝑨) (𝒎𝑨)
𝑺#
(𝑽)
𝑵𝑷𝑵 𝑻𝒓𝒂𝒏𝒔𝒊𝒔𝒕𝒐𝒓 𝑷𝑵𝑷 𝑻𝒓𝒂𝒏𝒔𝒊𝒔𝒕𝒐𝒓 𝑵𝑷𝑵 𝑻𝒓𝒂𝒏𝒔𝒊𝒔𝒕𝒐𝒓 𝑷𝑵𝑷 𝑻𝒓𝒂𝒏𝒔𝒊𝒔𝒕𝒐𝒓
1 0.2
2 0.4
3 0.6
4 0.8
5 1.0
6 2.0
7 4.0
8 6.0
9 8.0
10 10
11 12
12 15
Table 3.1:_____________________________
Experiment No.08: characteristics of BJT Page|6
 Centre for Advanced Studies in Engineering, Islamabad
EE2301 Electronic Devices and Circuits (4Th Semester)
PART-II: input Characteristics of BJTs (Common Emitter Configuration)
1. Connect the circuit as shown in Fig 3.4.
2. Adjust VCC such that VCE=5V, and repeat the above procedure given in steps 4-3.
Record your readings in Table 3.2
3. Now adjust VBB such that IB =10 A
4. Plot the input characteristics between VBE and IB for VCE equal to 0V and 5V on a
single graph paper using the same axes and attach it as Fig 3.7 & 3.8.

RC
2 N 3904
NPN
1 k
RB

VCC
 10 k 
VBB 

E B C

Fig 3.2:_________________________________
Fig 3.1 (Pin
diagram)
RC

2 N 3906
1 k
PNP RB

VCC
10 k 
VBB 


E B C
Fig 3.3 (Pin
diagram) Fig 3.4:__________________________
VBE @ VCE=0V VBE @ VCE=5V
IB (V) (V)
(A)
NPN PNP NPN PNP
10 Transistor Transistor Transistor Transistor

20
30
40
50
60
70
80
90

Experiment No.08: characteristics of BJT Page|7

 Centre for Advanced Studies in Engineering, Islamabad
EE2301 Electronic Devices and Circuits (4Th Semester)

Fig 3.5:____________________________________

Experiment No.08: characteristics of BJT Page|8

 Centre for Advanced Studies in Engineering, Islamabad
EE2301 Electronic Devices and Circuits (4Th Semester)

Fig 3.6:___________________________________________

Experiment No.08: characteristics of BJT Page|9

 Centre for Advanced Studies in Engineering, Islamabad
EE2301 Electronic Devices and Circuits (4Th Semester)

Fig 3.7:___________________________________________

Experiment No.08: characteristics of BJT Page|10

 Centre for Advanced Studies in Engineering, Islamabad
EE2301 Electronic Devices and Circuits (4Th Semester)

Fig 3.8:___________________________________________

Home Task: (Simulation)

Verify the above tables on any Software (Proteus/Multism) and attached the designed circuit
with proper labelling (Name/Roll Number) with this report and also email your simulation
report before next lab.

Experiment No.08: characteristics of BJT Page|11

 Centre for Advanced Studies in Engineering, Islamabad
EE2301 Electronic Devices and Circuits (4Th Semester)
Lab #08 Marks distribution

ER1 ER9 RR2

Task 50 points 30 points 20 points

Lab #08 Marks obtained

ER1 ER9 RR2 Total

Task

Marks Details:

Marks obtained: …………………………………

Instructor’s Signature: …………………………..

Experiment No.08: characteristics of BJT Page|12