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D
SOIC-8
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S D
S D
S D G
G D S
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 28 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 54 75 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 21 30 °C/W
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating. Rev 1 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
50 25
-8V -6V
-10V
VDS=-5V
-5.5V
40 20
-5V
30 15
-ID (A)
-ID(A)
20 -4.5V 10
125°C
10 VGS=-4V 5
25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
30 1.6
ID=-10A
Normalized On-Resistance
25
1.4 VGS=-10V
20 VGS=-6V
RDS(ON) (mΩ)
15 1.2
VGS=-4.5V
10
VGS=-10V 1
5
0 0.8
0 5 10 15 20 25 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature
60 1.0E+01
50 ID=-10A 1.0E+00
1.0E-01
40 125°C
RDS(ON) (mΩ)
1.0E-02
-IS (A)
30
1.0E-03
20 125°C
25°C 1.0E-04
25°C
10 1.0E-05
0 1.0E-06
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
10 3000
VDS=-15V
ID=-12A 2500
8 Ciss
Capacitance (pF)
2000
-VGS (Volts)
6
1500
4 Coss
1000
Crss
2
500
0 0
0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0
TJ(Max)=150°C 40
TJ(Max)=150°C
TA=25°C
100µs 10µs TA=25°C
RDS(ON) 1ms 30
10.0 limited
-ID (Amps)
Power (W)
10ms
0.1s 20
1.0 1s
10
10s
DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient
RθJA=40°C/W
Thermal Resistance
PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance