Chemical Vapour Deposition Coverages

Thin Film System – TFS 500
Advanced tool for advanced ALD research
December 2007 Beneq © 2007 1

TFS 500 in a Nutshell
Thermal and plasma-assisted ALD
Reaction chambers
Wafer 200x5mm (∅ x H)
3D / batch 200x170mm (∅ x H)
3D / batch 450x500mm (∅ x L)
Powder 70x100mm (∅ x H)
Precursor sources, max. 5 gas

4 liquid
4 hot
Process temperature, max. 500°C
LxWxH 1600 x 900 x 1930 mm
Control system PLC + PC (HMI)

ALD Process
Process features:
Pressure 0.1-5 mbar
Temperature 60-500ºC
Gas flow 0.3-1.0 SLM
Reaction chamber
Substrate
Gas in Gas out

Process Knowhow
For example, Beneq has experience in ALD processing of:

Al2O3 TaNx
B2O3 (Ta,Al)N
Co2O3 TiCrOx
Cr2O3 (Ti,Al)N
CuO TiN
Fe2O3 VO2
WO3
Ga2O3
ZnO
HfO2 (Al,Zn)O
In2O3 ZnS
MgO ZnSe
Nb2O5 ZrO2
NiO Rare earth (RE) oxides
Pd Sc2O3
Pt Y2O3
SiO2 Ca10(PO4)6(OH)2)
Polyimides, PMDA-ODA, PMDA-DAH
SnO2
3-aminopropyltrimethoxysilane
Ta2O5 coupling agent
TiO2
TFS 500 Flexibility
Modular construction
Several reaction chamber types

available – easy to change
Suitable sources for all precursors
Easy upgrading and later

modifications
Fully configurable recipes
Additional ports for plasma,

in-situ diagnostics, load-lock…

Heating principle
Cold Wall Design

Water cooled vacuum chamber wall
Qr
Qc
Qc = Heat transfer by conduction

Qr = Heat transfer by radiation
Qc >> Qr > Qout Ir heaters Radiation shields

Vacuum Chamber Design
Cold wall vacuum chamber vs. Hot wall vacuum chamber
No fiber dust to clean room Fiber dust from insulation

Compact lay-out Lot of floor space needed
Low temperature gradients High temperature gradients
Low heated mass High heated mass
All connections visible Limited visibility to connections
T (°C)
L (m)
Reaction Chamber Design
Hot wall reaction chamber vs. Cold wall reaction chamber
No precursor condensation Possible precursor

on hot walls condensation on cold walls
No secondary reaction Possible secondary reaction
pathways on hot walls pathways on cold walls
High temperature uniformity Lower temperature uniformity
over the substrate over the substrate
150ºC
400ºC
400ºC
400ºC
The most feasible solution:

Hot wall reaction chamber in a cold wall vacuum chamber.

Constant nitrogen flow to

vacuum chamber
Pumping through reaction
chamber
Vacuum chamber pressure
10mbar
Reaction chamber pressure
1mbar
Sealing flow keeps the Benefits:
precursors in reaction Hot wall reaction
chamber chamber
Easy to operate
Easy to clean

Different Types of ALD Reactors
Open Chamber Closed Chamber Flow-Through Chamber

• Poor efficiency • For high surface area • Fast
• Slow • Slow for flat substrates • Good flow dynamics
• Condensation problems • High efficiency

Features
Excellent flow dynamics
Excellent flow distribution
Low pressure drop
Benefits
High speed: < 1s cycle times
Excellent uniformity
Excellent precursor efficiency

Precursor Source System
Gas source
For O2, O3, NH3, Si2H6, WF6...
Fast and highly repeatable operation
without slow MFC’s
Gas from facility systems or
separate container (excluded)
Liquid source
For H2O, TMA, DEZ, TiCl4...
Cooled and temperature stabilized
for maximum accuracy and
200ml container included (600ml as
option)
Container with 3-way valves for
complete line purging
Own vapor pressure or carrier gas
assisted pulsing

Hot source HS 200

For low vapor pressure liquids and
solids; AlCl3, TaCl5, TDMAT, TEMAH…
Heating up to 200°C
Fully heated delivery line to prevent
precursor condensation
Low pressure drop for high efficiency
High surface area design for high
evaporation rate with solid precursors
200ml container included
Container with 3-way ALD-valves for
complete line purging
Benefits of HS 200
Lower temperature for given precursor
Use of lower vapor pressure precursors
Fast, reliable and safe operation
Easy inert loading in a glove box

Hot source HS 500

For low vapor pressure liquids and
solids; AlCl3, Zn…
Heating up to 500°C with inert gas
valving
Fully heated delivery line to prevent
precursor condensation
Low pressure drop for high efficiency
Very easy precursor change
5ml glass crucible included
Benefits of HS 500
Use of very low vapor pressure
precursors
Minimized wetted parts - very efficient
in precursor testing and development
Semi-inert loading in a glove box

Extensive precursor source configuration

More available processes simultaneously
More flexibility in research
More complex film structures
TFS 500 Maximum source configuration

Gas sources 5 pcs
Liquid sources 4 pcs
HS 200 4 pcs or
HS 500 2 pcs

Activation Energy in ALD
There are several ways to deliver the necessary

activation energy to the substrate:
Thermal ALD Plasma Enhanced ALD
- Resistive heating - Capacitive coupled

- IR-radiators - Inductive coupled
- etc. - Microwave
- etc.
The most appropriate way to deliver the energy is

selected based on reactor design and substrate
geometry.

Plasma Reaction Chamber
Beneq capacitive coupled plasma reaction chamber

design offers maximum flexibility for research:
Thermal and plasma

enhanced ALD
Plasma pre-treatment and
post-treatment
Remote and direct plasma
Several gas flow direction
options:
Cross flow
Shower head
Hybrid

Plasma Reaction Chamber
Features:
Adjustable electrode
distance
Adjustable grid distance
Minimal remote plasma
source distance
No grid for direct plasma
Several gas flow direction
options
Rapid plasma pulsing or
continuous mode
Wafer face down – Electrode
alternative in TFS 500 Grid
Wafer

Gas Flow Options with Plasma
Mode Gases in Gases in

cross-flow mode shower head mode
A Both precursors Ar-plasma
B Metallic precursor Non-metallic precursor –plasma
C - All precursors
Modes A and B Mode C

Load lock
Features
Max. wafer size 200 mm

Excellent flow dynamics
Detaching without tools
Fully adjustable position
Stainless steel or
Aluminum baseplate

Load lock
For faster wafer processing

1 linear movement without
cross movement
Unidirectional thermal
expansion
Robust structure
Safety switch (interlock)
Optional clean room wall
assembly

TFS 500 Performance
ALD Al2O3 Coating on Granules
Deposited on polystyrene with Beneq TFS 500 by Micronova (Helsinki University of Technology)

Film Thickness Uniformity
120.2
9-point measurement 120.1

100 mm wafer
Al2O3 with TMA + H2O
120.1 120.3 120.2 120.2 120.0
2 second cycle time
Thickness variation 0.25%
120.2
(from 120.0 to 120.3 nm)
120.2
Gas flow direction

Film Thickness Control
Al 2O 3 - Film Thickness vs. Number of Cycles
350
Thickness (nm)
300
250
y = 0,104x + 4,278
200
R 2 = 1,000
150
100
50
0
0 1000 2000 3000 4000
Number of Cycles

TFS 500 ALD System
Innovative and unique design

Large reaction space with small foot print
Compact source constructions
All daily operations above waistline

TFS 500 ALD System
Safety
No out-hanging components
All chemicals in ventilated
hood
Over-pressure safe vacuum
chamber construction
Easy maintenance
Easy access for maintenance
Good visibility to all
connections
All cover sheets easy to open
Hinged back flange with
heaters on sliding rails

TFS 500 ALD System
Options (can also be integrated later)

Reaction chambers
Liquid sources
Gas sources
Hot sources (HS 200 & HS 500)
Load lock
Vacuum pumps and accessories
O3 generator
N2 generator
UPS (Uninterruptible Power Supply)
Individual gas cabinets

TFS 500 User Interface
Datalogging (p,T,flow)
Easy recipe programming language

Full control in maintenance mode

Thank you for
your attention!

Chemical Vapour Deposition Coverages

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Thin Film System – TFS 500

Advanced tool for advanced ALD research

December 2007 Beneq © 2007 1

Thermal and plasma-assisted ALD

Precursor sources, max. 5 gas

Process temperature, max. 500°C

LxWxH 1600 x 900 x 1930 mm

Control system PLC + PC (HMI)

December 2007 Beneq © 2007 2

Gas in Gas out

December 2007 Beneq © 2007 3

For example, Beneq has experience in ALD processing of:

Several reaction chamber types

Suitable sources for all precursors

Easy upgrading and later

Fully configurable recipes

Additional ports for plasma,

December 2007 Beneq © 2007 5

Cold Wall Design

Qc = Heat transfer by conduction

December 2007 Beneq © 2007 6

Cold wall vacuum chamber vs. Hot wall vacuum chamber

No fiber dust to clean room Fiber dust from insulation

Hot wall reaction chamber vs. Cold wall reaction chamber

No precursor condensation Possible precursor

The most feasible solution:

December 2007 Beneq © 2007 8

Constant nitrogen flow to

December 2007 Beneq © 2007 9

Different Types of ALD Reactors

Open Chamber Closed Chamber Flow-Through Chamber

December 2007 Beneq © 2007 10

December 2007 Beneq © 2007 11

December 2007 Beneq © 2007 12

Hot source HS 200

December 2007 Beneq © 2007 13

Hot source HS 500

December 2007 Beneq © 2007 14

Extensive precursor source configuration

TFS 500 Maximum source configuration

December 2007 Beneq © 2007 15

There are several ways to deliver the necessary

Thermal ALD Plasma Enhanced ALD

- Resistive heating - Capacitive coupled

The most appropriate way to deliver the energy is

December 2007 Beneq © 2007 16

Beneq capacitive coupled plasma reaction chamber

Thermal and plasma

December 2007 Beneq © 2007 17

December 2007 Beneq © 2007 18

Mode Gases in Gases in

Modes A and B Mode C

Max. wafer size 200 mm

December 2007 Beneq © 2007 20

For faster wafer processing

December 2007 Beneq © 2007 21

ALD Al2O3 Coating on Granules

December 2007 Beneq © 2007 22

9-point measurement 120.1

Gas flow direction

December 2007 Beneq © 2007 23

Al 2O 3 - Film Thickness vs. Number of Cycles

December 2007 Beneq © 2007 24