Unit III - Optoelectronic Devices -

Part III
By Dr.M.C. Ajay Kumar and Dr. P. Vinay Kumar
Contents
1. Photodiode - construction,working, characteristics and applications.
2. Solar Cell - construction, working,characteristics and applications.
3. PIN diode - construction,working and applications.
4. APD - construction,working and applications.
5. Comparison of PIN and APD.
Photo Diode
Photo diode is a two terminal device. It is P-N junction diode which is operated in
reverse bias.

It converts optical energy into electrical energy.

Construction
A photodiode is made up of two layers of P-type and N-type layers. In this diode,
P-type diffusion layer is developed over on N-type heavily doped substrate. Contacts
are made up of metals to form two terminal cathode and anode as shown in the
figure.
Working
When the photodiode is reverse biased (as shown in the fig) the depletion region
widens and that leads to motion of minority charge carriers producing leakage
current.
Working
The current produced in the absence of light in photodiode under the influence of
reverse bias is called Dark Current.

When the junction of the Photodiode is illuminated with light as shown in the fig.
The photons impart their energy in the form of light to the junction. This leads to
excitation of electrons from valence band to conduction band and contribute current.

The electron hole pairs generated are called photocarriers and they contribute
photocurrent.
Working
It is operated in two modes:

1. Photoconductive Mode: If the diode is short-circuited externally, a current flow

between P and N type. In this mode diode is operated in reverse bias.

2. Photovoltaic Mode: If the diode is left open-circuited, then a voltage appears

between P and N regions. Solar cells use this mode of operation.
V-I characteristics of Photodiode
The V-I characteristics are shown in the third
quadrant because photodiode is operated in
reverse bias.

It varies linearly with the intensity of photons

striking the diode surface.
Advantages and disadvantages
Advantages of Photodiodes

1. The reverse current is low in the tens of microamperes.

2. The rise and fall times in case of photodiodes is very small making it suitable for high-speed counting
and switching applications.

Disadvantages of Photodiodes

Photodiodes have lower light sensitivity than cadmium sulphide LDRs (Light dependent resistors), thus they CdS
LDRs are considered more suitable for some applications.
Solar Cell
Solar cell is P-N junction which converts light energy in to electrical energy when
illuminated.

It works on the principle of Photovoltaic Effect.

It is also called Photovoltaic Cell.

Symbolic representation:

Materials: Si, others such as GaAs, CdTe (cadmium Telluride)

Construction of Solar Cell
Solar cell is like a ordinary diode.

It consists of a Si PN junction with glass

window on the top surface of P-type laye.

P- type is made very thin in such way that

light can reach easily PN junction.

The P nickel plated ring around the P layer

acts as a positive terminal (Anode) and the
metal contact at the bottom acts as a
negative terminal (Cathode) as shown in
the figure.
Working
When the solar radiation is incident on the cell. Electron hole pairs are generated
and reach the depletion region where the electric field separates them.

Electrons in the P- region move to N-region and vice-versa. These charge produce
potential difference between P and N regions called Photo emf.

The current contributed by these carriers is called Photo current.

Characteristics of Solar Cell
The V-I characteristics of solar cell is shown in
the fig.

Voc - is the open circuit voltage- it is measured

by measuring the voltage across the terminals of
the cell when no load is connected.

Isc - is the shortcircuit current - It is measured

by shortciruiting the terminals of the cell. i.e load
is connected.
Characteristics of Solar Cell
The power equals to the product of the diode
voltage and current.

At first increases linearly with voltage and but

then rapidly goes to zero around the turn-on
voltage of the diode.

The maximum power is attained at Vm with Im.

Characteristics of Solar Cell
Fill Factor: it is the ratio between the product of
the maximum voltage and current to the short
circuit current and open circuit voltage.

Efficiency: The ratio of maximum output power to

the radiation input power.
Application
1. Industrial Applications: Cathode protection, Alarm systems,Defence equipment.
2. Solar cells are used in satellites and space vehicles.
3. Telecommunication systems.
4. Ocean Navigation systems.
5. Social Applications: Solar street lights, watches, calculators etc.
PIN Diode
PIN (Positive intrinsic Negative Diode): it is two terminal device in which P-type is
and N-type layers are separated by intrinsic layer (i).

It is operated in reverse bias.

It has wider depletion region due to intrinsic layer (i).

Symbolic representation:
Construction
The PIN diode has a large Intrinsic layer between P and N type layer with metal
contacts as shown in the figure.
 Working
PIN diode is having large intrinsic layer which has no free
charges its resistance is high. As a result large voltage drop
is seen across it.

Since it has wider depletion region most of the incident

photons are absorbed which create electron hole pair in the
depletion region.

The high electric field in the depletion region causes free

charges to separate and produce photocurrent in the circuit.

PIN diode is more sensitive than Photodiode.

Working
Under reverse bias, since the depletion region will become wider as result it offer
low capacitance path. Hence PIN diode acts as variable capacitor in reverse bias.

Under reverse bias, at certain voltage entire intrinsic layer is swept out of charge
carriers. This voltage is called swept-in voltage.

Hence under forward bias, reduction in depletion region offers low resistance path to
the carriers therefore it acts as variable resistor.
Characteristics
1. Low Capacitance : since it has wider depletion region so low capacitance.
2. High reverse breakdown voltage.
3. Sensitive photodetection.
4. Carrier Storage.

Applications
1. High voltage regulator
2. As RF Switch
3. Photodetector
APD ( Avalanche Photodiode)
APD is more sophisticated when compared to PIN diode.

It operates under high reverse bias condition.

They have high electric field intensity region.

It has internal gain mechanism due to impact ionisation which result in avalanche
effect so that photo current can be amplified.

Operation of APD undergoes two processes:

1. Impact Ionisation.
2. Avalanche Effect.
Construction
It has four regions N+ region, P region, an intrinsic layer and P+ region. The N+
and P+ region are heavily doped and the intrinsic layer is lightly doped. Its
construction can be understood more clearly with the help of the below diagram.
Working
The device is essentially a reverse biased p-n
junction.When the incident light passes through
the P+ region and is absorbed by the intrinsic
layer by generation of electron hole pair. These
charge carriers are separated by the electric field
in the I region.

Electron drifts towards the PN+ junction. Due to

high reverse voltage, the electron gains kinetic
energy and ionses the atoms in its path. This
processes is called impact ionisation.This
processes cumulates and the avalanche takes place.
This effect is called Avalanche effect.
Working
As a result one electron - hole pair produce M
electron-hole pairs in the processes where M is
multiplication factor.

Thus their occurs a carrier multiplication and internal

amplification(PN+ region).

This internal amplification enhances the responsivity of

the detector.
Applications
1. High speed laser scanners
2. Speed gun
3. PET scanners
4. Microscopy and particle detection
Advantages and Disadvantages
Advantages:

1.High level of sensitivity

2. High frequency response

3. Internal current gain

Disadvantages:

1. High operating voltages

2. High noise levels
3. Output is not linear
Comparison of PIN and APD
Conclusions
1. Photodiode is operated in reverse bias.
2. Pin diodes are more sensitive than photodiode.
3. APD have high electric field regions.
4. APD have high noise levels.
5. Discussed various applications of Photodiode,PIN and APD.
6. Compared PIN and APD.
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