UNIT - 1

Q1. An SCR has …………….. pn junctions

1. Two

2. Three

3. Four

4. None of the above

Answer : 2

Q2. An SCR is a solid state equivalent of …………….

1. Triode

2. Pentode

3. Gas-filled triode

4. Tetrode

Answer : 3

Q3. An SCR has ………….. semiconductor layers

1. Two

2. Three

3. Four

4. None of the above

Answer : 3

Q4. An SCR has three terminals viz ……………

1. Cathode, anode, gate

2. Anode, cathode, grid

3. Anode, cathode, drain

4. None of the above

Answer : 1

Q5. An SCR behaves as a ……………. switch

1. Unidirectional
 2. Bidirectional

3. Mechanical

4. None of the above

Answer : 1

Q6. An SCR is sometimes called …………

1. Triac

2. Diac

3. Unijunction transistor

4. Thyristor

Answer : 4

Q7. An SCR is made of ………….

1. Germanium

2. Silicon

3. Carbon

4. None of the above

Answer : 2

Q8. In the normal operation of an SCR, anode is …………… w.r.t. cathode

1. At zero potential

2. Negative

3. Positive

4. None of the above

Answer : 3

Q9. In normal operation of an SCR, gate is ………..w.r.t. cathode

1. Positive

2. Negative

3. At zero potential

4. None of the above

Answer : 1

Q10. An SCR combines the features of …………..

1. A rectifier and resistance

2. A rectifier and transistor

3. A rectifier and capacitor

4. None of the above

Answer : 2

Q11. The control element of an SCR is ………….

1. Cathode

2. Anode

3. Anode supply

4. Gate

Answer : 4

UNIT - 2

Q12. The normal way to turn on a SCR is by ……………..

1. Breakover voltage

2. Appropriate anode current

3. Appropriate gate current

4. None of the above

Answer : 3

Q13. An SCR is turned off by …………….

1. Reducing anode voltage to zero

2. Reducing gate voltage to zero

3. Reverse biasing the gate

4. None of the above

Answer : 1

Q14. An SCR is a ……………….. triggered device

 1. Voltage

2. Current

3. Voltage as well as current

4. None of the above

Answer : 2

Q15. In an SCR circuit the supply voltage is generally ……….. that of breakover voltage

1. Equal to

2. Less than

3. Greater than

4. None of the above

Answer : 2

Q16. When an SCR is turned on, the voltage across it is about ……….

1. Zero

2. 10 V

3. 1 V

4. 1 V

Answer : 4

Q17. An SCR is made of silicon and not germanium because silicon ………

1. Is inexpensive

2. Is mechanically strong

3. Has small leakage current

4. Is tetravalent

Answer : 3

Q18. An SCR is turned off when …………..

1. Anode current is reduced to zero

2. Gate voltage is reduced to zero

3. Gate is reverse biased

 4. None of the above

Answer : 1

Q19. In an SCR circuit, the angle of conduction can be changed by ……….

1. Changing anode voltage

2. Changing gate voltage

3. Reverse biasing the gate

4. None of the above

Answer : 2

Q20. If firing angle in an SCR circuit is increased, the output …………

1. Remains the same

2. Is increased

3. Is decreased

4. None of the above

Answer : 3

Q21. If gate current is increased, then anode-cathode voltage at which SCR closes …………….

1. Is decreased

2. Is increased

3. Remains the same

4. None of the above

Answer : 1

Q22. When SCR is OFF, the current in the circuit is …………….

1. Exactly zero

2. Small leakage current

3. Large leakage current

4. None of the above

Answer : 2

Q23. An SCR can exercise control over ………. of a.c. supply

 1. Positive half-cycles only

2. Negative half-cycles only

3. Both positive and negative half-cycles

4. Positive or negative half-cycles

Answer : 4

Q24. We can control a.c. power in a load by connecting …………

1. Two SCRs in series

2. Two SCRs in parallel

3. Two SCRs in parallel opposition

4. None of the above

Answer : 3

Q25. When SCR starts conducting, then ……………. loses all control

1. Gate

2. Cathode

3. Anode

4. None of the above

Answer : 1

1.An SCR is considered to be semi controlled device. Because

(A) It can be turned OFF but not turned ON with gate pulse
(B) It conducts during only one half cycle of an alternating current wave
(C) It can be turned ON but not turned OFF with a gate pulse
(D) It can be turned ON only during only one half cycle of an alternating voltage wave
Answer-C
2.SCR can be turned on by
1. Applying anode voltage at a sufficiently fast rate
2. Applying sufficiently large anode voltage
3. Increasing SCR temperature to a sufficiently large value
4. Applying adequately large gate current with SCR forward biased
From these, the correct statement
(A) 2, 4 (B) 4 only (C) 1, 2 4 (D) All
Answer-D

3.Which of the following does not cause permanent damage to SCR?

(A) high current (B) high rate of rise of current
(C) high temperature rise (D) high rate rise of voltage
Answer-A
4.Thyristors can be turned off by
1. reducing the current below the holding level
2. applying a negative voltage to the anode of the device
3. reducing gate current
from these, the correct statements are
(A) 1 and 3 (B) 1 and 2 (C) 1, 2 and 3 (D) 2 and 3
Answer-B
5.What is a TRIAC?
(A) Two thyristors connected in parallel mode
(B) Two thyristors connected in series mode
(C) Two thyristors connected in anti parallel mode
(D) Two transistors connected in anti parallel mode
Answer-C
6.TRIAC is
(A) Uncontrolled switch (B) Semi controlled switch
(C) Fully controlled switch (D) None of the above
Answer-B
7.For a TRIAC and SCR,
(A) both are unidirectional devices
(B) TRIAC requires more current for turn on than SCR at a particular voltage
(C) TRIAC has less time for turn off than SCR
(D) Both are available with comparable voltage and current ratings
Answer-B
8.Which one of the following statements is TRUE for an ideal power diode?
(A) Forward voltage drop is zero and reverse saturation current is non zero
(B) Reverse recovery time is non zero and reverse saturation current is zero
(C) Forward voltage drop is zero and reverse recovery time is zero
(D) Forward voltage drop is non zero and reverse recovery time is zero
Answer-C
9.Surge current rating of an SCR specifies the maximum
(A) repetitive current with sine wave (B) non repetitive current with rectangular wave
(C) non repetitive current with sine wave (D) repetitive current with rectangular wave
Answer-C
10.Consider the following statements
1. IGBT has low input impedance compared to PMOSFET
2. IGBT and PMOSFET are both voltage controlled devices
3. IGBT can be designed for higher voltages as compared to PMOSFETs
4. IGBT converters are more costly and bigger in size compared to BJT converters
The correct statements are:
(A) 1 and 2 (B) 2 and 3 (C) 3 and 4 (D) 1 and 4
Answer-B
11.Thyristor A has rated gate current of 2 A and thyristor B has rated current of
100 mA
1. A is a GTO and B is a conventional SCR
2. B is a GTO and A is conventional SCR
3. A may operate as a transistor
4. B may operate as a thyristor
From the above the correct statements are
(A) 1, 4 (B) only 1 (C) 2, 3 (D) 2, 4
Answer-B
12.In a GTO, anode current begins to fall when gate current
(A) is negative peak at t = 0
(B) is negative peak at t = storage period ts
(C) just begins to become negative at t = 0
(D) is negative peak at t = (ts + fall time)

Answer-B
13.The snubber circuit is used in thyristor circuits for
(A) triggering (B) phase shifting
(C) di/dt protection (D) dv/dt protection
Answer-D
14.Snubber circuits are used to protect thyristor from which of the following?
(A) High di/dt and low dv/dt (B) High dv/dt and low di/dt
(C) High dv/dt and high di/dt (D) low di/dt and low dv/dt
Answer-C
15.Snubber circuit is used to limit the rate of
(A) Rise of current (B) Conduction period
(C) Rise of voltage across SCR (D) None of the above
Answer-C
16.For an SCR, dv/dt protection is achieved through
(A) RL in series with SCR (B) RC across SCR
(C) L in series with SCR (D) L across SCR
Answer-B
17.The snubber circuit used to shape the turn on switching trajectory of thyristor
and/or to limit di/dt during turn on is
(A) L – R snubber polarized (B) R – C snubber polarized
(C) R – C snubber unpolarized (D) L – R snubber unpolarized
Answer-A
18.For an SCR, di/dt protection is achieved through
(A) R in series with SCR (B) RL in series with SCR
(C) L in series with SCR (D) L across SCR
Answer-C
19.Which one of the following statements is NOT true?
(A) For SCRs to be in conduction state, forward anode current must be greater than the
latching current
(B) For SCRs to be in blocking state, forward anode current must be lower than the holding
current
(C) When SCRs in conduction state, they can be turned off by applying suitable gate pulses
(D) When avalanche break down takes place, SCRs enter into the conduction state
Answer-C
20.During forward blocking state, a thyristor is associated with
(A) low current, large voltage (B) large current, low voltage
(C) medium current, large voltage (D) low current, medium voltage
Answer-A
21. AC power in a load can be controlled by connecting
(1) Two SCRs in series
(2) Two SCRs in parallel
(3) Two SCRs in parallel opposition
(4) None of the above
Ans: 3