coatings

Article
Finite Element Analysis of the 3ω Method for
Characterising High Thermal Conductivity
Ultra-Thin Film/Substrate System
Weidong Liu, Liangchi Zhang * and Alireza Moridi
Laboratory for Precision and Nano Processing Technologies, School of Mechanical and Manufacturing
Engineering, The University of New South Wales, Sydney, NSW 2052, Australia;
weidong.liu@unsw.edu.au (W.L.); alireza.moridi@gmail.com (A.M.)
* Correspondence: liangchi.zhang@unsw.edu.au; Tel.: +61-2-9385-6078




Received: 7 January 2019; Accepted: 29 January 2019; Published: 31 January 2019


Abstract: The 3ω method is an attractive technique for measuring the thermal conductivity of
materials; but it cannot characterise high thermal conductivity ultra-thin film/substrate systems
because of the deep heat penetration depth. Recently, a modified 3ω method with a nano-strip
was specifically developed for high thermal conductivity thin film systems. This paper aims to
evaluate the applicability of this method with the aid of the finite element analysis. To this end,
a numerical platform of the modified 3ω method was established and applied to a bulk silicon and
an AlN thin-film/Si substrate system. The numerical results were compared with the predictions of
theoretical models used in the 3ω method. The study thus concluded that the modified 3ω method is
suitable for characterising high thermal conductivity ultra-thin film/substrate systems.

Keywords: thermal conductivity; finite element analysis; 3ω method; ultra-thin film/substrate system

1. Introduction
Thermal management of advanced thin-film/substrate systems plays an important role in their
applications [1–6]. In comparison with that of bulk material, the thermal conductivity of a thin-film
could be significantly different because of the size effect and microstructural difference [2,3,7]. However,
characterising the thermal conductivity of a thin-film is challenging due to the fact that controlling the
heat penetration depth in micro-/nano-scale is difficult [8]. Particularly, if the thermal conductivity of
a thin-film is relatively high, the measurement becomes more challenging as the heat could penetrate
into the specimen fast and deeply [1].
A few methods have been developed for characterising the thermal conductivity of thin-films,
including time-domain thermoreflectance (TDTR) method [9], scanning thermal probes [10,11],
coherent optical method [12,13], Raman spectroscopy [14–16], and the 3ω method [1,17,18]. The 3ω
method has several unique advantages over the others. Firstly, this method is non-destructive and
relatively cost-effective [1]. Secondly, the metal-strip element, used in the 3ω method as a heater and
a temperature sensor, is merely a fraction of a Celsius degree hotter than the surrounding material.
Such low temperature difference makes less undesirable heat loss from the sample and thus increases
measurement accuracy [1,17,18]. Thirdly, this method is applicable to in situ characterisation [1,17,18].
In the conventional 3ω method the thermal conductivity of the thin-film should be significantly
lower than that of the substrate [1,18]. This is because the amount of the heat that passed through
the thin-film and penetrated into the substrate may affect the measurement accuracy of the thin-film
thermal conductivity. Recently, Moridi and Zhang et al. [1] proposed a modified 3ω method with
a nano-strip to solve this problem. The extremely narrow metal-strip element provides a much better

Coatings 2019, 9, 87; doi:10.3390/coatings9020087 www.mdpi.com/journal/coatings

Coatings 2018, 8, x FOR PEER REVIEW 2 of 10

nano-strip
Coatings 2019,to solve this problem. The extremely narrow metal-strip element provides a much better
9, 87 2 of 10
control of heat penetration depth over the conventional 3ω method. The heat merely penetrates into
several microns of the specimen [1]. Moreover, the narrow strip induces a much higher electrical
control of heat
resistance penetration
in comparison depth
with theover
widethe conventional
strip 3ω method.
elements, making Thetoheat
it easier merely
balance thepenetrates
measurementinto
several microns of the specimen [1]. Moreover, the narrow strip induces a much
circuit. Although this method has been applied in characterising ultra-thin film/substrate systems higher electrical
resistance
[1], in comparison
the thermal conductivitywith the wide
models usedstrip elements,
in this method making
has notit been
easierwell
to balance
evaluated theyet.
measurement
circuit. Although this method has been applied in characterising ultra-thin film/substrate
This paper aims to evaluate the applicability of the modified 3ω method for characterising systems [1],
high
the thermal conductivity models used in this method has not been well evaluated
thermal conductivity ultra-thin film/substrate system with the aid of the finite element analysis. The yet.
Thistheoretical
thermal paper aimsmodelsto evaluate
usedthe in applicability
3ω method of thebemodified
will introduced3ω method for characterising
first. Then high
the finite element
thermal conductivity ultra-thin film/substrate system with the aid of the
model will be established for the modified 3ω method and applied to a bulk silicon and an AlN finite element analysis.
The thermal substrate
thin-films/Si theoretical models
system. used the
Finally, in simulation
3ω methodresultswill be
willintroduced
be compared first.
withThen the finite
the theoretical
element model will be established for the modified 3ω method and applied to a bulk silicon and
predictions.
an AlN thin-films/Si substrate system. Finally, the simulation results will be compared with the
theoretical
2. Methodspredictions.

2. Methods
2.1. Thermal Theory of 3ω Method
In the 3ω
2.1. Thermal method,
Theory the thermal conductivity of the underneath material was obtained by
of 3ω Method
coupling the experimental measurements and theoretical model predictions [1]. Figure 1 shows a
In the 3ω method, the thermal conductivity of the underneath material was obtained by coupling
typical experimental arrangement of the 3ω method. A long and narrow metal-strip element is
the experimental measurements and theoretical model predictions [1]. Figure 1 shows a typical
deposited on the top surface of the specimen and attached to two square contact pads. This
experimental arrangement of the 3ω method. A long and narrow metal-strip element is deposited
metal-strip element functions as a heater and a temperature sensor [1]. The temperature increase ΔT
on the top surface of the specimen and attached to two square contact pads. This metal-strip element
of the specimen surface can be calculated by Reference [1]:
functions as a heater and a temperature sensor [1]. The temperature increase ∆T of the specimen
surface can be calculated by Reference [1]:
2V3ω
T = (1)
∆T = V0 
2V3ω
(1)
V0 α
where
where VV00 is
is the
the applied
applied voltage
voltage and V3ω
and V can be measured in the experiment, and α is the temperature
3ω can be measured in the experiment, and α is the temperature
coefficient of electrical resistance. The temperature increase is
coefficient of electrical resistance. The temperature increase is aa function
function of
of applied
applied frequency.
frequency.

Figure 1.
Figure Schematic of
1. Schematic of aa typical
typical measurement
measurement arrangement
arrangement of
of the
the 3ω method.
3ω method.

On the
On the other
other hand, ∆T can
hand, ΔT can be
be calculated
calculated based
based on
on aa one-dimensional
one-dimensional theoretical
theoretical model
model [1,18]
[1,18]
Z ∞
Prms cos(kx ) sin(kb)
∆T ( x ) = Prms  cos(kx2 )sin( kb
1/2)
dk (2)
l Λ
T ( x) = h specimen
lh specimen 
0
0 kb(k + q2 ) dk
kb(k + q )
2 2 1/2 (2)
where x is the distance (in-plane) from the centre of the metal-strip element, 2b is the width of metal
trip, Λ is the thermal conductivity of the specimen; lh is the length of the metal strip; Prms is the
where specimen
x is the distance (in-plane) from the centre of the metal-strip element, 2b is the width of metal
electrical power applied on the metal strip; 1/q is the thermal penetration
trip, Λspecimen is the thermal conductivity of the specimen; lh is the length of depth, k is wave
the metal strip;number. In
Prms is the
the case with an extremely narrow metal strip, the surface temperature increase can be approximated
electrical power applied on the metal strip; 1/q is the thermal penetration depth, k is wave number. In
by Reference [1]
the case with an extremely narrow metal strip, the surface temperature increase can be approximated
Prms
by Reference [1] ∆T = − (ln ω) + c (3)
2πlh Λspecimen
Coatings 2019, 9, 87 3 of 10

where ω = 2πf, and f is the applied frequency, c is a constant. Considering that the slope of ∆T −
ln(ω) or curve can be experimentally determined, the thermal conductivity of the specimen can then
be obtained.
In the case of the multilayer system, the complex temperature oscillation of the metal strip can be
calculated via a two-dimensional multilayer thermal model [1,19]:
Z ∞
− Prms 1 sin2 (kb)
∆T ( x ) = dk (4)
πlh Λy1 0 A1 B1 b2 k2

where
Ayi Bi
Ai A
yi −1 Bi −1
− tan h(φi − 1)
A i −1 = Ayi Bi
, i = 2 · · · n, (5)
1 − Ai A tan h(φi − 1)
yi −1 Bi −1
s
i2ω
Bi = Λ xyi k2 + (6)
Dyi

φi = Bi di (7)

Λ xy = Λ x /Λy (8)

where n is the total number of layers including the substrate; subscript i corresponds to the ith layer
starting from the top; ω is the angular modulation frequency of the electrical current; subscript y
corresponds to the direction perpendicular to the film/substrate interface; d is the layer thickness;
D is the thermal diffusivity. Λxy is the thermal-conductivity anisotropy, defined by the ratio of the
in-plane to the cross-plane thermal conductivity of the layers. If the substrate is semi-infinite, then
An = −1 [19]. For a finite thick substrate, An depends on the boundary condition at the bottom surface
of the substrate. Combining Equation (4) and the temperature increase experimentally determined,
one could obtain the unknown thermal conductivities [1].
It should be noted that for both the models simplifications have been used in determining the
thermal conductivity of materials. For example, thermal convection on the top surface of the specimen
was not considered.

2.2. Finite Element Simulation

Two specimens, a bulk silicon and an AlN thin-films/Si substrate system, were selected for
evaluating the above models with the aid of finite element analysis (ABAQUS software package
v.6.12-3). Figure 2a shows a two-dimensional model representing a cross-section of the silicon specimen
and the Gold (Au) nano-strip (width = 400 nm, thickness = 100 nm). Considering that the specimen
size was much larger than that of the nano-strip, only partial specimen was modelled. The finite
element model was based on a transient heat conduction equation with an isothermal boundary
condition. In particular, the initial temperature of the whole model was set to the room temperature
(25 ◦ C). The nano-strip temperature oscillates at a fixed frequency ω and the heat was conducted
into the specimen in cylindrical heat flow pattern. The input voltage of the 3ω method was applied
to the simulation via an equally calculated surface heat flux. The software was able to calculate
the temperature oscillation based on the applied input heat flux and the thermal properties of the
underneath material. To investigate the frequency effect, a series of simulations were conducted with
different heat inputs oscillated from 100 Hz and 10 kHz.
The material properties of gold and silicon were listed in Table 1 [20–22]. Quad-dominated free
mesh control was utilised for the meshing system. Standard linear heat transfer elements of DCC2D4D
with a 4-node convection or diffusion quadrilateral and dispersion control were used. Furthermore,
a thorough mesh independence study was performed to optimize the mesh size. A typical meshing
system is shown in Figure 2b.
 of the underneath material. To investigate the frequency effect, a series of simulations were
conducted with different heat inputs oscillated from 100 Hz and 10 kHz.
The material properties of gold and silicon were listed in Table 1 [20–22]. Quad-dominated free
mesh control was utilised for the meshing system. Standard linear heat transfer elements of
DCC2D4D with a 4-node convection or diffusion quadrilateral and dispersion control were used.
Coatings 2019, 9, 87 a thorough mesh independence study was performed to optimize the mesh size.4A
Furthermore, of 10
typical meshing system is shown in Figure 2b.

(a) (b)
Figure
Figure (a)(a)
2. 2. Finite
Finiteelement
elementmodel
modelof
of the
the Au
Au nano-strip andSi
nano-strip and Sispecimen,
specimen,and
and(b)
(b)the
the corresponding
corresponding
mesh
mesh used
used inin thesimulation.
the simulation.

ToToobtain
obtainthetheminimum
minimumfeasible
feasible model
model size, numericalanalyses
size, numerical analyseswerewereperformed
performed onon different
different
specimen sizes to remove any possible boundary effects. Moreover, heat convection
specimen sizes to remove any possible boundary effects. Moreover, heat convection was applied on was applied onthe
the specimen
specimen top surface.
top surface. According
According to the literature,
to the literature, the heatthe heat coefficient
transfer transfer coefficient
for natural forconvection
natural
onconvection
a plane wall onisa between
plane wall 5 and 25 W m5−and
is between 2 K 25 W Comparing
[23]. m−2 K [23]. Comparing
the modelling the modelling
results with results with
and without
and without natural convection on the top surface, it was found that a slight change
natural convection on the top surface, it was found that a slight change (less than 5%) of temperature (less than 5%) of
temperature was observed near the top surface. Here, the most conservative assumption
was observed near the top surface. Here, the most conservative assumption (i.e., 25 W m K), where (i.e., 25− W
2 m −2 K),

thewhere the heat has

heat transfer transfer has the highest
the highest coefficientcoefficient
of naturalof natural convection,
convection, was applied
was applied to thetomodel.
the model.
AA simulation model was further established for a high thermal conductivity thin-film/substrate
simulation model was further established for a high thermal conductivity thin-film/substrate
system. As shown in Figure 3, the model consists of a nano-strip (width = 400 nm, thickness = 100 nm),
system. As shown in Figure 3, the model consists of a nano-strip (width = 400 nm, thickness = 100 nm),
an AlN thin-film (thickness = 5 μm) and the Si substrate. Similar to the previous model, the
an AlN thin-film (thickness = 5 µm) and the Si substrate. Similar to the previous model, the simulation
simulation was a transient heat conduction model with an isothermal boundary condition.
was a transient heat conduction model with an isothermal boundary condition. Considering that the
Considering that the thickness of AlN thin-film was too small and its thermal conductivity was too
thickness of AlN thin-film was too small and its thermal conductivity was too high, a higher frequency
high, a higher frequency range 30–100 kHz was investigated for this system. The mesh and
range 30–100
boundary kHz
size was were
studies investigated
performed fortothis system.
obtain The mesh
the optimum meshand andboundary
model size.sizeThe studies were
material
performed to obtain the optimum mesh and model size. The material properties
properties were applied based on the experimental characterisation in this study and the thermal were applied based
onproperties
the experimental
available characterisation
in the literaturein(Table
this study andnumerical
1). The the thermal properties
model did notavailable
take intoin the literature
account any
(Table 1). The
interface numerical
thermal modelbetween
resistance did not take into account
the layers (perfectany interface
bonding thermal resistance
condition), to match betweenwith thethe
layers (perfectconditions.
theoretical bonding condition),
Considering to match
that the with the of
effect theoretical
interfaceconditions. Considering
thermal resistance (ITR)that the effect
cannot be
of avoided
interfacein thermal resistance we
the experiment, (ITR) cannot
carried befurther
out avoidedfinite
in the experiment,
element analysisweincluding
carried out thefurther
effect finite
of
element
AlN/Sianalysis
interfaceincluding the effect(1.796
thermal resistance of AlN/Si interface
× 10 −9 m 2 K/W, inthermal
Referenceresistance
[1]). (1.796 × 10−9 m2 K/W,
in Coatings
Reference2018,[1]).
8, x FOR PEER REVIEW 5 of 10

Figure3.3.Finite
Figure Finiteelement
elementmodel
model of
of the Au nano-strip,
nano-strip,AlN
AlNthin
thinfilm
filmand
andSiSisubstrate.
substrate.

Table 1. Material properties of Au, Si and AlN [20–22].

Material Λ (W/m·K) ρ (kg/m3) Cp (J/kg·K)
Au 318 19300 129
Si 142 2330 710
Coatings 2019, 9, 87 5 of 10
Figure 3. Finite element model of the Au nano-strip, AlN thin film and Si substrate.

Table 1. Material properties of Au, Si and AlN [20–22].

Table 1. Material properties of Au, Si and AlN [20–22].
Material Material Λ (W/m
Λ (W/m· K)·K) ρ (kg/m 3)
ρ (kg/m 3) Cp (J/kg·K) Cp (J/kg·K)
Au Au 318318 1930019300 129 129
Si Si 142142 2330 2330 710 710
AlN AlN 285285 3260 3260 740 740

3. Results
3. Results and
and Discussion
Discussion

3.1.
3.1. Bulk
Bulk Silicon
Silicon
Figure
Figure 4a
4a shows
shows aa typical
typical temperature
temperature increase
increase (∆T)
(ΔT) profile
profile of
of the
the nano-strip
nano-strip center
center with
with aa heat
heat
input
input oscillation
oscillation frequency
frequency of of 2000
2000 Hz.
Hz. Here only a short period of time from 0.02 to to 0.025
0.025 ss was
was
presented. To observe the gradual temperature increase/decrease of the nano-strip,
presented. To observe the gradual temperature increase/decrease of the nano-strip, each each temperature
oscillation
temperature period has been
oscillation divided
period has into
been40 sub-steps.
divided intoAs40 shown in the
sub-steps. Asfigure,
shownthe in ∆T
the of the nano-strip
figure, the ΔT of
oscillates from oscillates
0.005 to 0.06 ◦ ◦ C. Figure 4b shows the changes of
the nano-strip from C. Its average
0.005 value
to 0.06 °C. is aboutvalue
Its average 0.03 is about 0.03 °C. Figure 4b shows the
the
changes of the∆T
averaged from theΔT
averaged beginning
from the to 0.1 s. In to
beginning the0.1
beginning ∆T increased
s. In the beginning ΔT very quickly
increased very and then
quickly
gradually ◦
and then approached to a stable to
gradually approached value of 0.34value
a stable C. The results
of 0.34 °C.demonstrate
The results that the modified
demonstrate that 3ω
the
method
modifiedwith nano-strip
3ω method withreaches a stabilised
nano-strip reachescondition after
a stabilised some time
condition after(i.e.,
someabout
time0.04
(i.e.,s),about
which is
0.04
necessary for a reliable 3ω method measurement [1].
s), which is necessary for a reliable 3ω method measurement [1].

(a) (b)
Figure 4.4. (a)
Figure (a) A
A typical
typical temperature
temperature increase
increase profile
profileof
ofthe
thenano-strip
nano-stripcenter
center(f(f== 2000
2000 Hz).
Hz). (b)
(b) The
The
average
averagetemperature
temperatureincrease
increaseof
ofthe
thenano-strip
nano-stripcenter
centerversus
versusthe
thesimulation
simulationtime.
time.

Figure 5 shows a typical heat penetration pattern within the bulk silicon specimen in one heating
oscillation cycle (f = 2000 Hz). The time interval between each image is T/8 (0.0625 ms). The insets
of Figure 5 show the corresponding time within a heating oscillation cycle. At the beginning of the
cycle the temperature increases as the input heat going up, and the heat penetrates gradually into the
specimen, as shown in Figure 5a,b. The maximum temperature reaches a peak value at T/4 (Figure 5b)
and then decreases. Meanwhile, the temperature gradient in the specimen also decreases, evidenced
by the lessening of the temperature contour lines. This is due to the decrease of heat input at the
top surface and the heat conductance. After 3T/4, temperature gradient starts to increase again with
increasing heat input and finally the cycle finishes and the next cycle starts. Figure 6 shows a typical
variation of ∆T from the top surface of the specimen down into the underneath material along the
model center line. Near the top surface, ∆T decreases very fast in a small distance of 50 nm and
then approached to zero gradually, proving that the penetration depth of the modified 3ω method is
very small.
 at the top surface and the heat conductance. After 3T/4, temperature gradient starts to increase again
with increasing heat input and finally the cycle finishes and the next cycle starts. Figure 6a shows a
typical variation of ΔT from the top surface of the specimen down into the underneath material
along the model center line. Near the top surface, ΔT decreases very fast in a small distance of 50 nm
and 2019,
Coatings then9,approached
87 to zero gradually, proving that the penetration depth of the modified 63ω of 10
method is very small.

Figure
Figure 5. A
5. typical heat heat
A typical penetration pattern
penetration withinwithin
pattern the bulk
thesilicon specimen
bulk silicon in one heating
specimen in one oscillation
heating
cycle (f = 2000 Hz). (a) 0.0625
Hz). (a) 0.0625 ms; (b) 0.125 ms; (c) 0.1875 ms; (d) 0.25 ms; (e)ms;
ms; (b) 0.125 ms; (c) 0.1875 ms; (d) 0.25 ms; (e) 0.3125 (f) 0.375
ms; (f)ms;7 of 10
Coatingsoscillation cycle
2018, 8, x FOR (f = 2000
PEER REVIEW 0.3125
(g)0.375
0.4375 ms;
ms; (g)(h) 0.5 ms.
0.4375 ms; (h) 0.5 ms.

Figure 6. A typical variation of ∆T from the top surface of the Silicon specimen down into the
Figure 6. A typical variation of ΔT from the top surface of the Silicon specimen down into the
underneath material.
underneath material.

To evaluate the theoretical prediction of Equation (2), a series of simulations were conducted
with different heat inputs oscillated from 100 Hz to 10 KHz. Figure 7 shows the changes of the
average temperature increase at the specimen top surface center with input heat oscillation
frequency. It is clear that the higher the frequency, the lower the temperature increase. The red
 Figure 6. A typical variation of ΔT from the top surface of the Silicon specimen down into the
Coatingsunderneath
2019, 9, 87 material. 7 of 10

To evaluate the theoretical prediction of Equation (2), a series of simulations were conducted
To evaluate the theoretical prediction of Equation (2), a series of simulations were conducted with
with different heat inputs oscillated from 100 Hz to 10 KHz. Figure 7 shows the changes of the
different heat inputs oscillated from 100 Hz to 10 KHz. Figure 7 shows the changes of the average
average temperature increase at the specimen top surface center with input heat oscillation
temperature increase at the specimen top surface center with input heat oscillation frequency. It is clear
frequency. It is clear that the higher the frequency, the lower the temperature increase. The red
that the higher the frequency, the lower the temperature increase. The red dashed line in Figure 7 shows
dashed line in Figure 7 shows the theoretical prediction made via Equation (2), which agrees very
the theoretical prediction made via Equation (2), which agrees very well with the numerical result.
well with the numerical result. It proves that the theoretical model used in the modified 3ω method
It proves that the theoretical model used in the modified 3ω method is suitable for characterising the
is suitable for characterising the thermal conductivity of bulk silicon. According to Equation (3), the
thermal conductivity of bulk silicon. According to Equation (3), the slope of ∆T-ln(2πf ) can be used to
slope of ΔT-ln(2πf) can be used to calculate the specimen thermal conductivity ΛSpecimen, in which Prms
calculate the specimen thermal conductivity ΛSpecimen , in which Prms is equal to the power of input
is equal to the power of input heat flux, and lh is the length of the nano-strip (the element thickness in
heat flux, and lh is the length of the nano-strip (the element thickness in the finite element model). One
the finite element model). One can obtain that the measured thermal conductivity is 124.8 W/mK,
can obtain that the measured thermal conductivity is 124.8 W/mK, which is similar to the literature
which is similar to the literature value shown in Table 1.
value shown in Table 1.

Figure 7. A comparison between the numerical simulation and theoretical prediction results
Figure 7. A comparison between the numerical simulation and theoretical prediction results
(Equation (2)) on ∆T versus f.
(Equation 2) on ΔT versus f.
3.2. AlN Thin-Film/Si Substrate
3.2. AlN
Coatings Thin-Film/Si
2018, 8, x FOR PEERSubstrate
REVIEW 8 of 10
Numerical simulations were conducted for characterising the thermal conductance of the high
thermal Numerical simulations were conducted for characterising the thermal conductance of contour
the high
profile ofconductivity AlN thin-film/Si
the AlN thin-film/Si substratesubstrate. Figure the
system during 8 presents a typical
simulation. As cantemperature
be seen from the
thermal the
profile conductivity AlN thin-film/Si substrate. Figure 8 presents Asa typical temperature contour
figure, of
the heatAlN thin-film/Si
propagation insubstrate system
the thin film during
is faster thethat
than simulation. can beThis
in the substrate. seenisfrom thethe
due to figure,
fact
the
thatheat propagation
the AlN in thethermal
has a higher thin film is faster than
conductivity thatSiinsubstrate.
than the substrate. This
Figure is due atotypical
9 shows the factvariation
that the
AlN has a higher thermal conductivity than Si substrate. Figure 9 shows a typical variation
of ΔT from the thin-film top surface into the substrate along the model center line. Similar to Figure of ∆T from
the thin-film top surface into the substrate along the model center line. Similar to Figure
6, ΔT decreases very fast in a small distance of 50 nm from the top surface and then approaches zero 6, ∆T decreases
very fast in a small distance of 50 nm from the top surface and then approaches zero gradually.
gradually.

A typical ◦ C) contour profile of the AlN thin-film/Si

Figure
Figure 8.
8. A typical cylindrical
cylindrical temperature
temperature increase
increase ((°C) contour profile of the AlN thin-film/Si
substrate
substrate system.
system. The
The thickness
thickness of
of the
the thin
thin film
film is
is 22 µm.
μm.
 Figure
Coatings 2019, 9,8.87A typical cylindrical temperature increase (°C) contour profile of the AlN thin-film/Si8 of 10
substrate system. The thickness of the thin film is 2 μm.

Figure 9. A
Figure 9. A typical
typical variation of ∆T
variation of ΔT from
from the
the AlN
AlN thin-film
thin-film top
top surface
surface into
into the
the Si
Si substrate.
substrate.

To evaluate the theoretical prediction of Equation (4), a series of simulations were conducted
To evaluate the theoretical prediction of Equation (4), a series of simulations were conducted
with different heat inputs oscillated from 30 to 100 kHz. Figure 10 shows the changes of the average
with different heat inputs oscillated from 30 to 100 kHz. Figure 10 shows the changes of the average
temperature increase at the specimen top surface center with input heat oscillation frequency. The red
temperature increase at the specimen top surface center with input heat oscillation frequency. The
dashed line in Figure 10 shows the theoretical prediction made via Equation (4). Overall, the numerical
red dashed line in Figure 10 shows the theoretical prediction made via Equation (4). Overall, the
simulation and the theoretical prediction show a very good agreement with each other, proving
numerical simulation and the theoretical prediction show a very good agreement with each other,
that the theoretical model used in the modified 3ω method is suitable for characterising the thermal
proving that the theoretical model used in the modified 3ω method is suitable for characterising the
conductivity of high thermal conductivity thin film/substrate system. The slight difference may due
thermal conductivity of high thermal conductivity thin film/substrate system. The slight difference
to the strong assumption made in the theoretical model. Figure 10 also presents the simulation results
may due to the strong assumption made in the theoretical model. Figure 10 also presents the
taking account of the AlN/Si ITR effect, which agree very well with the experimental results from
simulation results taking account of the AlN/Si ITR effect, which agree very well with the
Reference [1].
experimental results from Reference [1].
According to Equation (3), the slope of ∆T-ln(2πf ) can be used to calculate the overall thermal
According to Equation (3), the slope of ΔT-ln(2πf) can be used to calculate the overall thermal
conductivity of the AlN thin-film/Si substrate underneath. Given that the thermal conductivity of
conductivity of the AlN thin-film/Si substrate underneath. Given that the thermal conductivity of
the Si substrate is 142 W/m·K, the thermal conductivity of AlN thin-film can be obtained via the
the Si substrate is 142 W/m·K, the thermal conductivity of AlN thin-film can be obtained via the
implicit Equations (4)–(8). A Matlab code was developed to numerically solve these equations, and the
implicit Equations (4)–(8). A Matlab code was developed to numerically solve these equations, and
Coatings 2018,thermal
calculated 8, x FOR PEER REVIEW of the AlN thin-film is 195.3 W/m·K.
conductivity 9 of 10
the calculated thermal conductivity of the AlN thin-film is 195.3 W/m·K.

Figure 10. A comparison among the numerical simulation, theoretical prediction, and experimental
Figure 10. A comparison among the numerical simulation, theoretical prediction, and experimental
results on ∆T versus f.
results on ΔT versus f.

4. Conclusions
This paper evaluated the theoretical models used in a modified 3ω method in characterising the
thermal conductivity of materials with the aid of the finite element analysis. Numerical models were
Coatings 2019, 9, 87 9 of 10

4. Conclusions
This paper evaluated the theoretical models used in a modified 3ω method in characterising the
thermal conductivity of materials with the aid of the finite element analysis. Numerical models were
established for a bulk silicon and an AlN thin-film/Si substrate system, and a series of simulations
were conducted over a wide range of input heat oscillation frequencies. It was found that for both the
cases the temperate increase of the specimen top surface center matches very well with the theoretical
predictions. This study thus concludes that the modified 3ω method with a nano-strip is suitable for
characterising high thermal conductivity ultra-thin film/substrate systems.

Author Contributions: Conceptualization and Methodology, W.L., L.Z. and A.M.; Software, W.L. and A.M.;
Formal Analysis, W.L., L.Z. and A.M.; Investigation, W.L., L.Z. and A.M.; Writing—Original Draft Preparation,
W.L.; Writing—Review and Editing, W.L.; Visualization, W.L. and A.M.; Supervision, L.C.; Project Administration,
L.Z.; Funding Acquisition, L.Z.
Funding: This research was funded by Australian Research Council (No. LP130100108).
Conflicts of Interest: The authors declare no conflict of interest.

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