Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU1508DX

GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 700 V
IC Collector current (DC) - 8 A
ICM Collector current peak value - 15 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 35 W
VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.1 A - 1.0 V
ICsat Collector saturation current 4.5 - A
VF Diode forward voltage IF = 4.5 A 1.6 - V
tf Fall time ICM = 4.5 A; IB(end) = 1.1 A 0.4 0.6 µs

PINNING - SOT186A PIN CONFIGURATION SYMBOL

PIN DESCRIPTION
case c
1 base
2 collector
b
3 emitter Rbe

case isolated
1 2 3 e

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 700 V
IC Collector current (DC) - 8 A
ICM Collector current peak value - 15 A
IB Base current (DC) - 4 A
IBM Base current peak value - 6 A
-IB(AV) Reverse base current average over any 20 ms period - 100 mA
-IBM Reverse base current peak value 1 - 5 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 35 W
Tstg Storage temperature -65 150 ˚C
Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-hs Junction to heatsink with heatsink compound - 3.6 K/W
Rth j-a Junction to ambient in free air 55 - K/W

1 Turn-off current.

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU1508DX

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink

STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2
ICES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125˚C
IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A 140 - 390 mA
BVEBO Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Rbe Base-emitter resistance VEB = 7.5 V - 33 - Ω
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.1 A - - 1.0 V
VBEsat Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.3 V
hFE DC current gain IC = 1 A; VCE = 5 V - 13 -
hFE IC = 4.5 A; VCE = 1 V 4 5.5 7.0
VF Diode forward voltage IF = 4.5 A - 1.6 2.0 V

DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF
Switching times (line deflection ICM = 4.5 A; IB(end) = 1.1 A; LB = 6 µH;
circuit). Fig.1, Fig.2 and Fig.3. -VBB = 4 V; (-dIB/dt = 0.6 A/µs)
ts Turn-off storage time 5.0 6.0 µs
tf Turn-off fall time 0.4 0.6 µs

2 Measured with half sine-wave voltage (curve tracer).

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU1508DX

ICsat h FE
TRANSISTOR 100
IC DIODE

t Tj = 25 C
Tj = 125 C
5V

IB IBend
10
t

20us 26us

1V
64us

VCE
1
0.01 0.1 1 10
t IC / A
Fig.1. Switching times waveforms. Fig.4. Typical DC current gain. hFE = f (IC)
parameter VCE

ICsat VBESAT / V
1.2
90 %
Tj = 25 C
1.1
Tj = 125 C
IC
1.0

0.9
10 %
0.8 IC/IB=
tf t
ts 0.7 3
IB 4
IBend 0.6
5
t 0.5

0.4
0.1 1 10
- IBM IC / A
Fig.2. Switching times definitions. Fig.5. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB

+ 150 v nominal VCESAT / V

1.0
adjust for ICsat IC/IB=
0.9
5
0.8
4
0.7
1mH 3
0.6
0.5
Tj = 25 C
0.4 Tj = 125 C
D.U.T.
IBend LB 0.3
12nF
0.2
0.1
-VBB Rbe

0
0.1 1 10
IC / A
Fig.3. Switching times test circuit. Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU1508DX

VBESAT / V ts, tf / us
1.2 12
Tj = 25 C 11
10 ts
1.1 Tj = 125 C
9
1.0 8
7
0.9 IC= 6
5 IC =
6A
0.8 4
4.5A 4.5A
3 3.5A
3A
0.7 2
2A tf
1
0.6 0
0 1 2 3 4 0.1 1 10
IB / A IB / A
Fig.7. Typical base-emitter saturation voltage. Fig.10. Typical collector storage and fall time.
VBEsat = f (IB); parameter IC ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C

VCESAT / V PD% Normalised Power Derating

10 120
with heatsink compound
Tj = 25 C 110
Tj = 125 C 100
6A 90
80
4.5A 70
1 60
50
3A 40
30
IC=2A 20
10
0.1 0
0.1 1 10 0 20 40 60 80 100 120 140
IB / A Ths / C
Fig.8. Typical collector-emitter saturation voltage. Fig.11. Normalised power dissipation.
VCEsat = f (IB); parameter IC PD% = 100⋅PD/PD 25˚C = f (Ths)

Eoff / uJ Zth / (K/W)

1000 10

IC = 4.5A
0.5
1
3.5A 0.2
100 0.1
0.05

0.1 0.02 PD tp tp
D=
T

D=0
t
T
10 0.01
0.1 1 10 1E-06 1E-04 1E-02 1E+00
IB / A t/s
Fig.9. Typical turn-off losses. Tj = 85˚C Fig.12. Transient thermal impedance.
Eoff = f (IB); parameter IC Zth j-hs = f(t); parameter D = tp/T

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU1508DX

IC / A
100

= 0.01
ICM max
tp =
10 IC max
10 us
II

Ptot max
1
100 us

1 ms
I
0.1
10 ms

DC

0.01
1 10 100 1000
VCE / V
Fig.13. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of
the envelope.

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU1508DX

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g 10.3
max
4.6
max
3.2
3.0 2.9 max

Recesses (2x) 2.8

2.5 6.4
0.8 max. depth
15.8
15.8 19 seating max
max. max. plane
3 max.
not tinned

3
2.5

13.5
min.

1 2 3

0.4 M 1.0 (2x)

0.6
2.54 0.9
0.5 0.7
5.08 2.5 1.3

Fig.14. SOT186A; The seating plane is electrically isolated from all terminals.

Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

September 1997 6 Rev 1.300

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU1508DX

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1997 7 Rev 1.300

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