Order this document

SEMICONDUCTOR TECHNICAL DATA

... designed for general–purpose switching and amplifier applications.

• DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc
• Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc 15
AMPERE
• Excellent Safe Operating Area POWER TRANSISTORS
COMPLEMENTARY
SILICON
 MAXIMUM RATINGS 60 VOLTS
Rating Symbol Value Unit THERMAL CHARACTERISTICS

Collector–Emitter Voltage VCEO 60 Vdc

Collector–Emitter Voltage VCER 70 Vdc
Collector–Base Voltage VCB 100 Vdc
Emitter–Base Voltage VEB 7.0 Vdc
Collector Current — IC 15 Adc
Continuous
Base Current IB 7.0 Adc
Total Power Dissipation @ PD 90 Watts CASE 340D–01
TC = 25 C 0.72 W/ C
Derate above 25 C 90 WATTS
Operating and Storage TJ, Tstg –65 to C
JunctionCharacteristic Symbol +150
Max Unit
Temperature Range
Thermal Resistance, RθJC 1.39 C/W
Junction to Case
Thermal Resistance, RθJA 35.7 C/W
Junction to Ambient

1000

VCE= 4.0 V
GAIN

TJ = 25°C
hFE, DC CURRENT

100 TIP3055
TIP2955

10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)

Figure 1. DC Current Gain

ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter
Motorola, Inc. 1995 Sustaining Voltage (1) VCEO(sus 60 — Vdc
1
Motorola Bipolar Power Transistor Device Data
 (IC = 30 mAdc, IB = 0) )
Collector Cutoff Current ICER — 1.0 mAdc
(VCE = 70 Vdc, RBE = 100 Ohms)
Collector Cutoff ICEO — 0.7 mAdc
Current (VCE
= 30 Vdc, IB =
0)
Collector Cutoff Current ICEV — 5.0 mAdc
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
Emitter Cutoff IEBO — 5.0 mAdc
Current
(VBE = 7.0
Vdc, IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain hFE —
(IC = 4.0 Adc, VCE = 4.0 Vdc) 20 70
(IC = 10 Adc, VCE = 4.0 Vdc) 5.0 —
Collector–Emitter Saturation Voltage VCE(sat Vdc
(IC = 4.0 Adc, IB = 400 mAdc) ) — 1.1
(IC = 10 Adc, IB = 3.3 Adc) — 3.0
Base–Emitter On VBE(on) — 1.8 Vdc
Voltage (IC = 4.0
Adc, VCE = 4.0
Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Is/b 3.0 — Adc
Biased
(VCE = 30 Vdc, t = 1.0 s; Nonrepetitive)
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product fT 2.5 — MHz
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Small–Signal Current Gain hfe 15 — kHz
(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055.

100
(AMPS)

50
30 There are two limitations on the power
OR CURRENT

20
300µs
10 1.0ms handling ability of a transistor: average junction
5.0 dc temperature and second breakdown. Safe
3.0 10ms operating area curves indicate IC – VCE limits of
IC, COLLECT

2.0 SECONDARY BREAKDOWN LIMIT the transistor that must be observed for reliable
1.0 BONDING WIRE LIMIT
THERMAL LIMITC@
=T °C
25
0.5
0.3
0.2 °C
TJ = 150
0.1
1.0 2.0 4.0 6.0 10 20 40 60
operation; i.e., the transistor must not be subjected to greater dissipation than the curves
indicate.
The data of Figure 2 is based on TC = 25 C; TJ(pk) is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for
temperature.

Figure 2. Maximum Rated

Forward Bias Safe
Operating Area

2 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS
Motorola Bipolar Power Transistor Device Data 3