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Features
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VN770K 220 m(1) 9 A(2) 36 V
1. Total resistance of one side in bridge configuration
c t(
2. Typical current limitation value
d u
r o
SO-28
■
■
Suited as low voltage bridge
e P
■
Linear current limitation
Very low standby power dissipation
le t
This device is suitable to drive a DC motor in a
■ Short circuit protected
o
bridge configuration as well as to be used as a
s
quad switch for any low voltage application.
■ Status flag diagnostic (open drain)
b
-O
The dual high side switches have built-in thermal
■ Integrated clamping circuits shutdown to protect the chips from over
■ Undervoltage protection
s ) temperature and current limiter blocks to protect
t(
■ ESD protection the device from short circuit. Status output is
d
ro
The low side switches are two OMNIFET II types
The VN770K is a device formed by three (fully auto protected Power MOSFET in
e P
monolithic chips housed in a standard SO-28 VIPower™ technology). They have built-in
et
package: a double high side and two low side thermal shutdown, linear current limitation and
switches. Both the double high side and low side
o l
switches are made using STMicroelectronics
overvoltage clamping. Fault feedback for thermal
intervention can be detected by monitoring the
s
VIPower™ M0-3 Technology. voltage at the input pin.
Ob
Table 1. Device summary
Order codes
Package
Tube Tape and reel
Contents
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.1 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3 Electrical characteristics for dual high side switch . . . . . . . . . . . . . . . . . . . 9
s )
2.4 Electrical characteristics for low side switches . . . . . . . . . . . . . . . . . . . . 11
c t(
2.5
u
Dual high-side switch timing data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
d
2.6
o
Electrical characterization for dual high side switch . . . . . . . . . . . . . . . . . 16
r
2.7
P
Electrical characterization for low side switches . . . . . . . . . . . . . . . . . . . . 19
e
3
le t
Application recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
s o
4
b
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
O
4.1
-
SO-28 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
)
4.2
state mode 27
t ( s
Thermal calculation in clockwise and anti-clockwise operation in steady
4.2.1
u c
Thermal resistances definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
4.2.2
o d Thermal calculation in transient mode . . . . . . . . . . . . . . . . . . . . . . . . . 27
5
o l Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Obs 5.1
5.2
SO-28 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
SO-28 tube shipment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
5.3 Tape and reel shipment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
List of tables
( s )
c t
d u
r o
e P
l e t
s o
O b
List of figures
s o
Figure 33. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
O b
Figure 34.
Figure 35.
Figure 36.
Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Source drain diode forward characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Static drian source on resistance vs Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 37. Static drain source on resistance vs input voltage (Id=7A) . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 38. Static drain source on resistance vs input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 39. Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 40. Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 41. Turn-off drain source voltage slope (Vin=3.5V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 42. Turn-off drain source voltage slope (Vin=5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 43. Current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 44. Application diagram bridge drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 45. Recommended motor operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 46. Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 47. SO-28 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 48. Chipset configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 49. Auto and mutual Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . 26
Figure 50. SO-28 HSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . 28
Figure 51. SO-28 LSD thermal impedance junction ambient single pulse. . . . . . . . . . . . . . . . . . . . . . 28
Figure 52. Thermal fitting model of an H-bridge in SO-28 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 53. SO-28 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 54. Tube dimensions (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Figure 55. Tape and reel dimensions (suffix “13TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
s )
c t(
d u
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) -
t ( s
u c
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P r
e t e
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b s
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ct(
d u
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) -
t ( s
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P r
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8 DIAGNOSTIC Diagnostic of switches 1 and 2 (high-side switches)
9 INPUT 2 Input of switch 2 (high-side switch)
u c
12, 14, 15, 18 DRAIN 4 Drain of switch 4 (low-side switch)
o d
13
16, 17
INPUT 4
SOURCE 4 P r
Input of switch 4 (low-side switch)
Source of switch 4 (low-side switch)
20, 21 SOURCE 2
t e
Source of switch 2 (high-side switch)
22, 23 SOURCE 1
o le
Source of switch 1 (high-side switch)
26, 27 SOURCE 3
b s
Source of switch 3 (low-side switch)
2 Electrical specifications
u c
2.2 Absolute maximum ratings
o d
Table 4. Dual high side switch
P r
Symbol Parameter
t e Value Unit
le
so
VCC DC supply voltage 41 V
-VCC
-IGND
Reverse DC supply voltage
DC reverse ground pin current
O b -0.3
-200
V
mA
IOUT DC output current
) - Internally limited A
-IOUT
( s
Reverse DC output current
t
-6 A
IIN
u c
DC input current ±10 mA
od
ISTAT DC status current ±10 mA
e t e
VESD
– Input 4000 V
o l – Status
– Output
4000
5000
V
V
b s – VCC 5000 V
O Ptot
Tj
Power dissipation (TC =25°C)
Junction operating temperature
6
Internally limited
W
°C
Tc Case operating temperature -40 to 150 °C
Tstg Storage temperature -55 to 150 °C
Ptot
Tj
Power dissipation (TC = 25°C)
Operating junction temperature
6
Internally limited
( s )
W
°C
Tc Case operating temperature Internally limited
c t °C
u
od
Tstg Storage temperature -55 to 150 °C
P r
2.3
e
Electrical characteristics for dual high side switch
t
le
8V < VCC< 36V; -40°C < Tj < 150°C, unless otherwise specified.
o
Table 6.
b s
Power outputs (per each channel)
Symbol Parameter
VCC(1)
s )
Operating supply
5.5 13 36 V
t(
voltage
VUSD(1)
u c
Undervoltage
shutdown
3 4 5.5 V
o d Overvoltage
VOV(1)
P r shutdown
36 - - V
et eRON
On-state
resistance
IOUT =1A; Tj =25°C
IOUT =1A; VCC >8V
- -
160
320
m
m
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IS(1) Supply current -
Tj =25°C 12 25 µA
On-state; VCC = 13V; VIN = 5V; IOUT =0V 5 7 mA
Off-state output
IL(off1) VIN =VOUT =0V 0 - 50 µA
current
Off-state output
IL(off2) VIN =0V; VOUT =3.5V -75 - 0 µA
current
Off-state output
IL(off3) VIN =VOUT =0V; VCC = 13V; Tj = 125°C - - 5 µA
current
Off-state output
IL(off4) VIN =VOUT =0V; VCC = 13V; Tj = 25°C - - 3 µA
current
1. Per device.
s )
t(
1. See relative diagram
eP
VIL Input low level - - 1.25 V
o
bs
VIH Input high level 3.25 - - V
-O
IIH High level input current VIN = 3.25V - - 10 µA
VI(hyst)
Input hysteresis
voltage
( s ) 0.5 - - V
d u
Input clamp voltage
IIN = -1mA
6
-0.7 V
r o
eP
Table 9. Status pin (per each channel)
l e t
Symbol Parameter
s o VSTAT
voltage
ISTAT = 1.6 mA - - 0.5 V
s )
Note:
c
To ensure long term reliability under heavy overload or short circuit conditions, protection t(
d u
and related diagnostic signals must be used together with a proper software strategy. If the
of activation cycles.
r o
device is subjected to abnormal conditions, this software must limit the duration and number
e P
Table 11.
Symbol
Openload detection (per each channel)
Parameter
le
Test conditions
t Min Typ Max Unit
Openload on-state
s o
IOL
detection threshold
VIN = 5V
O b 20 40 80 mA
tDOL(on)
Openload on-state
detection delay
) -
IOUT = 0A - - 200 µs
t
Openload off-state
( s
VOL
u
threshold c
voltage detection VIN = 0V 1.5 2.5 3.5 V
o d
Openload detection
Pr
tDOL(off) - - 1000 µs
delay at turn-off
t e
2.4
o le
Electrical characteristics for low side switches
O Table 12.
Symbol
Off-state
Parameter Test conditions Min Typ Max Unit
uc
RDS(on) - - m
resistance VIN =5V; ID =3.5A 120
o d
Tj = 25°C, unless otherwise specified.
P r
Table 14. Dynamic
et e
ol
Symbol Parameter Test conditions Min Typ Max Unit
bs
Forward trans
gfs(1) VDD =13V; ID =3.5A - 9 - S
conductance
-O
COSS Output capacitance VDS = 13V; f = 1 MHz; VIN = 0V - 220 - pF
)
1. Pulsed: Pulse duration = 300µs, duty cycle 1.5%
s
Table 15.
c
Switching t(
Symbol
d u
Parameter Test conditions Min Typ Max Unit
td(on)
r o
Turn-on delay time - 100 300 ns
l e t td(off) Turn-off delay time Vgen =5V; Rgen = RIN MIN =150 - 500 1500 ns
Ob
td(on) Turn-on delay time - 0.75 2.3 µs
tr Rise time VDD =15V; ID =3.5A - 4.6 14 µs
td(off) Turn-off delay time Vgen =5V; Rgen =2.2K - 5.4 16 µs
tf Fall time - 3.6 11 µs
s )
-40°C < Tj < 150°C, unless otherwise specified.
c t(
Table 17. Protections
d u
r o
Symbol Parameter Test conditions
l e t
VIN =5V; VDS =13V; Tj =125°C
6
6.5
9 12
12
A
A
tdlim
Step response current
s o
VIN =5V; VDS = 13V - 4 - µs
Tjsh
limit
Over temperature
O b 150 175 - °C
shutdown
) -
Tjrs
Over temperature
reset
t( s 135 - - °C
Igf
uc
Fault sink current VIN = 5V; VDS =13V; Tj =Tjsh - 15 - mA
Pr
Single pulse
Eas VIN =5V; Rgen = RIN MIN =150; 200 - - mJ
avalanche energy
L=24mH
t e
o le
b s
O
s )
c t(
d u
r o
e P
le t
Table 18. Truth table
s o
Conditions Input
b Output Status
Normal operation
) -O
L
H
L
H
H
H
t( s L L H
Current limitation
u c H
H
X
X
(Tj < TTSD) H
(Tj > TTSD) L
d
ro
Over temperature
P
L
H
L
L
H
L
et e
Undervoltage
L
H
L
L
X
X
o l L L H
s Overvoltage
Ob
H L H
L H L
Output voltage > VOL
H H H
L L H
Output current < IOL
H H L
s )
c t(
d u
Figure 5. Over temperature status timing r o
e P
le t
s o
O b
) -
t ( s
u c
o d
P r
e t e
o l
b s
O
s )
c t(
d u
r o
e P
Figure 8. High level input current Figure 9.
t
Input high level voltage
le
s o
O b
) -
t ( s
uc
o d
P r
e te
o l
bs
Figure 10. Input low level voltage Figure 11. Input hysteresis voltage
s )
c t(
d u
r o
Figure 14. Turn-on voltage slope
P
Figure 15. Turn-off voltage slope
e
le t
s o
O b
) -
t ( s
u c
o d
P r
e t e
o l
Figure 16. On-state resistance vs Tcase Figure 17. On-state resistance vs VCC
b s
O
Figure 18. Status leakage current Figure 19. Status low output voltage
s )
c t(
d u
r o
Figure 20. Openload on-state detection
threshold P
Figure 21. Openload off-state voltage
detection threshold
e
le t
s o
O b
) -
t ( s
uc
o d
P r
e te
o l
Figure 22. Status clamp voltage
b s
O
Figure 23. Static drain source on resistance Figure 24. Derating curve
s )
c t(
d u
r o
e P
Figure 25. Transconductance
t
Figure 26. Transfer characteristics
le
s o
O b
) -
t ( s
u c
o d
P r
e t e
o l
Figure 27. Turn-on current slope (Vin=5V) Figure 28. Turn-on current slope (Vin=3.5V)
Obs
Figure 29. Input voltage vs input charge Figure 30. Capacitance variations
s )
c t(
d u
Figure 31. Switching time resistive load
r o
Figure 32. Switching time resistive load
(Vin=5V) (Rg=10Ohm)
e P
le t
s o
O b
) -
t ( s
uc
o d
P r
e te
o l
Figure 33. Output characteristics Figure 34. Step response current limit
b s
O
Figure 35. Source drain diode forward Figure 36. Static drian source on resistance vs
characteristics Id
v
s )
c t(
d u
r o
input voltage (Id=7A)
e P
Figure 37. Static drain source on resistance vs Figure 38. Static drain source on resistance vs
input voltage
le t
s o
O b
) -
t ( s
u c
o d
P r
e t e
o l
Figure 39. Normalized input threshold voltage Figure 40. Normalized on resistance vs
b s vs temperature temperature
Figure 41. Turn-off drain source voltage slope Figure 42. Turn-off drain source voltage slope
(Vin=3.5V) (Vin=5V)
s )
c t(
d u
r o
Figure 43. Current limit vs junction
temperature
e P
le t
s o
O b
) -
t ( s
uc
o d
P r
e te
o l
b s
O
3 Application recommendations
s )
c t(
d u
r o
e P
le t
s o
O b
Most motor bridge drivers use a reverse battery protection diode (D) inside the supply rail.
) -
This diode prevents a reverse current flow back to VBATT in case the bridge becomes
disabled via the logic inputs while motor inductance still carries energy. In order to prevent a
( s
hazardous overvoltage at circuit supply terminal (VCC), a blocking capacitor (C) is needed to
t
u c
limit the voltage overshoot. As basic orientation, 50µF per 1A load current is recommended.
As an alternative, a Zener protection (Z) is also suitable.
o d
Even if a reverse polarity diode is not present, it is recommended to use a capacitor or
P r
Zener at VCC because a similar problem appears in case the supply terminal of the module
has intermittent electrical contact to the battery or gets disconnected while the motor is
e t e
operating.
o l
b s
O
s )
ct(
d u
r o
e P
le t
s o
O b
) -
t ( s
u c
o d
P r
e te
o l
b s
O
s )
c t(
d u
r o
e P
le t
s o
O b
) -
t ( s
u c
o d
P r
e te
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b s
O
4 Thermal data
s )
c t(
d u
r o
Note:
P
Layout condition of Rth and Zth measurements (PCB FR4 area = 58mm x 58mm, PCB
thickness = 2mm, Cu thickness = 35µm, Copper areas: from minimum pad layout to 6cm2).
e
Figure 48. Chipset configuration
le t
s o
LOW SIDE
CHIP
RthAB
O b
HIGH SIDE
CHIP
RthAC
LOW SIDE
CHIP
channel 3
) - channel 1,2
channel 4
RthB
t ( s RthA
RthC
c
du
RthBC
r o
e P
Figure 49. Auto and mutual Rthj-amb vs PCB copper area in open box free air
condition(a)
le t
s o
Ob
s )
4.2.1 Thermal resistances definition
c t(
Values according to the PCB heatsink area.
d u
RthHS = RthHS1 = RthHS2 = high side chip thermal resistance junction to ambient (HS1 or HS2
in on-state)
r o
P
RthLS = RthLS3 = RthLS4 = low side chip thermal resistance junction to ambient
e
le t
RthHSLS = RthHS1LS4 = RthHS2LS3 = mutual thermal resistance junction to ambient between
high side and low side chips
s o
b
RthLSLS = RthLS3LS4 = mutual thermal resistance junction to ambient between low side chips
O
4.2.2 Thermal calculation in transient mode(b)
) -
( s
TjHS12 = ZthHS x PdHS12 + ZthHSLS x (PdLS3 + PdLS4) + Tamb
t
c
TjLS3 = ZthHSLS x PdHS12 + ZthLS x PdLS3 + ZthLSLS x PdLS4 + Tamb
u
d
TjLS4 = ZthHSLS x PdHS12 + ZthLSLS x PdLS3 + ZthLS x PdLS4 + Tamb
o
4.2.3
P r
Single pulse thermal impedance definition
e t e
Values according to the PCB heatsink area.
b s ZthLS = ZthLS3 = ZthLS4 = low side chip thermal impedance junction to ambient
Figure 50. SO-28 HSD thermal impedance junction ambient single pulse
Footprint
1 cm2
2 cm2
6 cm2
Footprint
1 cm2
2 cm2
6 cm2
s )
ct(
d u
r o
e P
le t
s o
O b
) -
Figure 51. SO-28 LSD thermal impedance junction ambient single pulse
t ( s
u c
o d
P r
e te
o l
b s
O
s )
c t(
d u
r o
e P
le t
s o
Thermal parameters(1) O b
Table 20.
Area/island (cm2)
) - Footprint 1 2 6
R1 = R6 (°C/W)
t ( s 2.6
c
du
R2 (°C/W) 3.5
ro
R12 = R17 (°C/W) 3.5
eP
R3 = R13 = R 18 (°C/W) 15.5
o
bs
R7 = R8 = R9 = R10 (°C/W) 150
R11 = R16 (°C/W) 1.5
O C1 = C5 (W.s/°C) 0.00025
C2 = C7 = C11 (W.s/°C) 0.024
C3 = C8 =C 12 (W.s/°C) 0.2
C4 = C9 = C13 (W.s/°C) 1.6 1.61 1.7 3.25
C6 = C10 (W.s/°C) 0.00075
1. The blank space means that the value is the same as the previous one.
s )
c t(
d u
r o
e P
le t
s o
O b
Table 21.
)
SO-28 mechanical data -
t ( s
mm inch
DIM
c
du
Min. Typ Max. Min. Typ. Max.
A
r o 2.65 0.104
e
a1 P 0.1 0.3 0.004 0.012
so
b1 0.23 0.32 0.009 0.012
Ob
C 0.5 0.020
c1 45° (typ.)
e 1.27 0.050
e3 16.51 0.650
S 8° (max.)
s )
c t(
5.3 Tape and reel shipment
d u
r o
Figure 55. Tape and reel dimensions (suffix “13TR”)
e P
le t
s o
O b
) -
t ( s
u c
o d
P r
e te
o l
b s
O
6 Revision history
s )
t(
Dimensions updated, see Figure 55: Tape and reel dimensions
(suffix “13TR”) on page 31
Inserted Chapter 4: Thermal data on page 26
u c
31-Aug-2006 3
d
Application diagram updated, see Figure 44: Application diagram
o
bridge drivers on page 23
P r
Updated disclaimer (last page) to include a mention about the use of
e
ST products in automotive applications
t
30-Jun-2009 4 le
Updated Table 3: Thermal data.
o
Updated note of Figure 47: SO-28 PC board.
b s
Updated Figure 48: Chipset configuration.
25-Sep-2013 5
O
Updated Disclaimer.
-
( s )
c t
d u
r o
e P
l e t
s o
O b
s )
t(
Please Read Carefully:
u c
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
d
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
o
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
P r
t e
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
le
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
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