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Abstract Processing
High quality high voltage and extra-high voltage The HV and EHV extruded dielectric cables are made
extruded dielectric transmission cables can be made with advanced materials and with advanced process
with the use of appropriate insulation and technology equipment. One critical aspect of the
semiconductive materials and with special processing processing is the ability to maintain a high degree of
equipment. The requirements for the cleanliness of the concentricity. Various methods are employed to
insulation products are defined. The methods required maintain concentricity for these cables which generally
to produce, test and maintain high levels of cleanliness have thick insulation layers, e.g. up to 32 mm of
are also elucidated. insulation thickness. Processing concentricity may be
The criticality of the smoothness of the semiconductive maintained through the use of vertical CVs, MDCVs,
conductor shields is described and the methods used for and, with care, catenary CVs. In addition to maintaining
producing and testing these shields are also explained. concentricity, maintaining cleanliness is also a very
Cable data showing excellent transmission properties critical part of making HVEHY cables.
for these extruded dielectric cables are presented. The material manufacturers are capable of providing
insulation products with the required cleanliness. Cable
Introduction manufacturers need to have process facilities and
High voltage and extra-high voltage (up to 500 kV) process controls which will allow them to maintain the
extruded dielectric AC cable usage is growing around high levels of cleanliness of the materials as-supplied.
the world, especially in urban areas. Some of the recent These facilities include true triple crossheads, staged
projects include the 500 kV Berlin BEWAG project, clean rooms, sealed materials handling systems from
Copenhagen Loop (420 kV), Australia 275 kV, the receiving station to the extruder, gravity flow,
Montreal 315 kV, Irian Jaya Indonesia (230 kV), filtered air, computer controls, stainless steel materials
Wuhan 220 kV, and a number of projects within Japan. of construction, and fine screen packs for the insulation
As early as 1988 Tokyo Electric Power installed 500 and, in some cases, even for the semiconductive
kV XLPE cables without any joints. There are extruder. The use of the dry-curing and dry-cooling
experimental evaluations of cables for even higher process is also an essential part of making a high
voltages. voltage cable in order to reduce the number of voids.
Extruded dielectric high and extra-high (HV/EHV) Some equipment manufacturers also provide a
voltage dielectric cables are an important factor in high continuous visual monitoring system of the insulation
voltage transmission. The primary reason for their use material as it exits the insulation extruder and passes
is that extruded dielectric HV/EHV constructions into the crosshead. This equipment, while still early in
provide long life cables with excellent overall its commercial stage, affords the cable manufacturer
properties. Because the insulation is made from with a method to monitor the cleanliness of the
specially designed polyethylene, these cables have very insulation as it will be utilized in the cable.
low dielectric losses and, because they are crosslinked,
have excellent thermal and mechanical aging Materials
characteristics and have higher permissible operating HV/EHV cables are composed of numerous layers. The
temperatures than paper-oil cables. There are key layers for electrical performance are the insulation
continuing improvements in the technology for and the conductor shield and the bonded insulation
prefabricated splices and terminations which also assist shield. The insulation must be sufficiently clean to
in the growth of HV/EHV cables. afford the cable with excellent electrical properties, e.g.
dissipation factor and breakdown strength. The shields
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Insulation: Electrical Cable Data
Extruded dielectric cables made with a “low sag” Impulse testing at 130C likewise showed excellent
material have very successfully passed the 138 kV performance. The cables were tested per the
AEIC CS7 specifications. The cables meet all the specification of 600 and 815 kV. Cable breakdowns
electrical criteria, have a very low dissipation factor, only occurred at greater than 1500 kV impulse levels.
and pass the HVTT and the 130C hot impulse test
easily (see Figures 1 and 2) [4,5]. Semiconductive Conductor Shield Material
As stated earlier, interfacial smoothness between the
700
semiconductive conductor shield and the primary
572* 572* insulation is one of the most important variables with
respect to the minimization of electrical degradation of
the XLPE insulation. Defects at the conductive-
insulation interface cause an electrical stress
enhancement. There are two components to the stress
concentration; the stress due to the geometry of the
defect derived from electrostatics, and the stress due to
space charge accumulation near the defect. Geometric
1 2 3 effects are very well understood, whereas the space
Sample Number charge contribution is still an active area of research.
Electrical stress enhancement at the conductive-
insulation interface is commonly estimated to be on the
order of h/r, where h is the base plane height of the
* No Breakdown Obtained, Equipment LimitationsEncountered conductive defect and r is the tip radius of the defect.
Figure 1 HVTT Results from a 138 kV cable utilizing a This is a first order approximation which is useful only
supersmooth semiconductive conductor shield and a “low for comparison. Closed form solutions for stress
sag” 0.9 MI high voltage insulation product extruded on an enhancement due to the flat oblique protrusion typically
MDCV line (produced and tested by Alcatel Canada Wire and found on extruded semiconductive materials are very
presented at the Fall 1992 ICC meeting). intractable and elusive. Finite element modeling has
been the preferred approach for estimation of stress
concentration due to various simulated defect
2500 geometries. Typical semiconductive defects are
Unaged
CB Aged estimated to have stress enhancement factors on the
2000 order of 2, whereas sharp tip defects (which are found
T CB
E
m 1500
T on semiconductive tape shields) have stress factors on
the order of 10 to 100.
0
r
The maximum theoretical stress within the solid
$
U)
1000
dielectric insulated cable is at the conductor shield
c“ interface. The maximum interfacial stress in a 35kV
500
small conductor cable is 4 kV/mm at the semicon
0 interface. For the case of a 420 kV design in
1 2 3 4 commercial use, the maximum stress is 12 kV/mm.
Sample Number With the higher design stress in HV and EHV cables,
the stress concentration at the interface is even more
8650 kV level 0815 kV level .Steps to Breakdown
important. For the 420 kV design, a stress
T=Temination Flashover CB=Cable Breakdown enhancement of 2 can be tolerated with minimal
degradation to the XLPE, but a stress enhancement on
Figure 2 Impulse Results for 130 C Conductor the order of 10 will create localized field stress >lo0
Temperature for Same 138 kV Cable of Figure 1 kV/mm which will result in degradation of the XLPE.
Current dielectric research has demonstrated that the
In the high voltage time test, the specification calls fo predicted electrostatic stress at the conductive-
testing at four hours at 200 kV and one hour at 300 kV insulation interface is well below the actual stress value
Cables made with a high voltage insulation product due to space charge effects, even in AC fields. Due to
easily passed these tests and gave no breakdown up to the superimposed electrical stress of space charge at the
the limitations of the equipment, i.e. at least up to 470 semiconductive interface, minimization of the localized
kV. field enhancement due to geometric protrusions
becomes even more important. It has not yet been
540
determined experimentally, but it is presumed that conductive-insulation interface has been shown by
conductive defects at the interface may enhance space many researchers to demonstrably improve HV and
charge injection into the dielectric. EHV cable properties in short term tests such as
Supersmooth semiconductive shields are the preferred impulse breakdown strength, and in long term tests
materials for HV and EHV cables. The characteristic of such as dry aged life tests. Supersmooth conductor
supersmooth products is at least an order of magnitude shields have also been shown to improve cable
reduction in the area density of surface protrusions performance in medium voltage cables in wet
(number per square area at the conductive-insulation accelerated tests, as shown in Figure 5. Because of the
interface) for defects less than 50 microns in height, and proven benefit to cable breakdown stress and longevity,
an absence of defects larger than 50 microns, relative to supersmooth conductor shields are strongly
conventional conductor shield products. recommended for all voltages of shielded solid
Supersmooth conductor shields are engineered from dielectric cables.
acetylene black, whereas conventional semiconductive
shield utilize fiunace carbon black. Acetylene black is
1
a very pure form of carbon produced through the auto- n
decomposition of acetylene gas. This attribute of N
b
.3
1.O%.
The smoothness of semiconductive shields can be EI
PI
measured with several different methods. The most
common approach is to inspect a ribbon of material
extruded with a small laboratory extruder. These 20 30 40 50 >=60
ribbons, 1 mm thick, model the smoothness that can be Protrusion Height (microns)
expected when the materials are extruded on to full size Figure 3 Surface Smoothness of Conventional (m) and
cables. Figure 3 depicts the smoothness of Supersmooth (0)semiconductive materials as measured with
conventional and supersmooth semiconductive lasar profilometry i.e. SEED, Surface Excellence Evaluation
materials as measured with a laser based device which Device, a modified Uninop instrument.
measures the height of surface protrusions greater than
20 microns in height. Other methods, such as
interferometry, can be used as well to evaluated surface
smoothness. Interferometric measurements of extruded
semiconductive products show the average roughness
(average deviation from a flat plane) of supersmooth
products to be on the order of 0.2 microns, whereas
conventional products are on the order of 1.O microns.
Figure 4 shows the results of AC stepped breakdown
tests (HVTT) for identical XLPE insulated cables with
different conductor shields. These shields are
formulated from the same polymer, poly(ethy1ene-co-
ethylacrylate), and were manufactured at the same 20 40 60 80
facility. The difference between the two shields is that Breakdown Strength (kV/mm)
one was produced with fiunace carbon black, and the
other is a supersmooth semiconductive shield produced
Figure 4 AC Stepped Breakdown Strength (HVTT)for
with acetylene black. The smoothness difference identical un-aged XLPE cables with Conventional (W) and
between these two materials was 1.5 orders of Supersmooth (0) conductor shields (same materials as
magnitude. characterized in Figure 3. 15kV designs, AWG #2 (34 "2)
Extra High Voltage cables are manufactured aluminum conductor, 4.4 mm XLPE insulation, strippable
exclusively with supersmooth conductor shields due to insulation shield. Cables manufactured for Union Carbide.
the demonstrated benefits. Improved smoothness of the Conventional shield: Weibull Eo = 35 kV/mm, beta = 3.8
Supersmooth shiled: Weibull Eo = 46 kV/mm, beta = 5.2
541
10 100 lo00
Failure T i (days)
Figure 5 Accelerated Cable Life Tests (ACLT) on XLPE Cables with various conductor shields; Conventional shields
From 1987 (e),Conventional shields from 1992 (0), and Supersmooth shields (4). Cable design and materials are the
pame as in Figure 2; 15kV designs, AWG #2 (34 mm2)aluminum conductor, 4.4 mm XLPE insulation, strippable
lnsulation shield. Aging Conditions; 4uo stress (8 kV/mm), 9OoC conductor (cycled 8/16hr), 5OoC de-ionized water
tank; water in conductor strands.
Conclusions References
Engineered materials and processes exist to meet the [ l ] C. Dang, J.-L. Parpal and J.-P. Crine, “Electrical
highest demands of high voltage and extra-high voltage Aging of Extruded Dielectric Cables-Review of
extruded dielectric transmission cables. Materials are Existing Theories and Data”, IEEE Transactions of
capable of being produced with very high levels of DEI, Vol. 3, pp.237-247, 1996.
cleanliness and with an excellent combination [2] J.-L. Parpal, J.-P. Crine and C. Dang, “Electrical
of electrical properties. Cable manufacturers utilize Aging of Extruded Dielectric Cables-A Physical
these materials to produce high quality HV/EHV Model”, IEEE Transactions of DEI, Vol. 4, pp. 197-
cables. 209, 1997.
[3] S . Kitai, S . Asai, and H. Kenechi, “Long-term
Acknowledgments Aging Phenomena of XLPE Cable”, Proceedings of
Numerous helpful discussions with Union Carbide Jicable 87 Conference, pp. 446-450, 1987.
Corporation colleagues from the Weston Canal and [4] Hartley, M. D. and Hintze, F. W., “Recent High
Montreal R&D Centers and the Seadrift manufacturing Voltage XLPE Cable Developments”, ICC Fall 1992
site and with personnel from the research group at Meeting Minutes, St. Petersburg, FL, November, 1992,
Nippon Unicar Company, Japan, are gratefully Appendix V-M- 1.
acknowledged. [5] Gross, L. H., “New High Voltage XLPE Insulation
Material”, ICC Fall 1992 Meeting Minutes, St.
Petersburg, FL, November, 1992, Appendix V-L- 1.
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