MDIS1501 – Single N-Channel Trench MOSFET 30V

MDIS1501
Single N-channel Trench MOSFET 30V, 67.4A, 5.6mΩ

General Description Features

The MDIS1501 uses advanced MagnaChip’s MOSFET
VDS = 30V
Technology, which provides high performance in on-state
ID = 67.4A @VGS = 10V
resistance, fast switching performance and excellent
RDS(ON) (MAX)
quality. MDIS1501 is suitable device for DC to DC < 5.6mΩ @VGS = 10V
converter and general purpose applications. < 8.6mΩ @VGS = 4.5V

100% UIL Tested

100% Rg Tested

D
D

G D S S

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
TC=25oC 67.4
TC=70oC 53.9
Continuous Drain Current (1) o
ID A
TA=25 C 25.1(3)
TA=70oC 20.2(3)
Pulsed Drain Current IDM 100 A
o
TC=25 C 44.6
TC=70oC 28.5
Power Dissipation o
PD W
TA=25 C 6.2(3)
TA=70oC 4.0(3)
(2)
Single Pulse Avalanche Energy EAS 94 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics

Characteristics Symbol Rating Unit

(1)
Thermal Resistance, Junction-to-Ambient RθJA 20.0 o
C/W
Thermal Resistance, Junction-to-Case RθJC 2.8

June. 2011. Version 1.2 1 MagnaChip Semiconductor Ltd.

 MDIS1501 – Single N-Channel Trench MOSFET 30V
Ordering Information

Part Number Temp. Range Package Packing Quantity Rohs Status

o
MDIS1501TH -55~150 C TO-251-VS(IPAK) Tube 75 units /Tube Halogen Free

Electrical Characteristics (TJ =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.3 1.9 2.7
VDS = 30V, VGS = 0V - - 1
Drain Cut-Off Current IDSS
TJ=55oC - - 5 µA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
VGS = 10V, ID = 20A - 4.9 5.6
Drain-Source ON Resistance RDS(ON) TJ=125oC - 7.1 8.1 mΩ
VGS = 4.5V, ID = 16A - 7.2 8.6
Forward Transconductance gfs VDS = 5V, ID = 10A - 35 - S
Dynamic Characteristics
Total Gate Charge Qg(10V) 15.5 20.7 25.9
Total Gate Charge Qg(4.5V) VDS = 15.0V, ID = 20A, 7.6 10.1 12.6
nC
Gate-Source Charge Qgs VGS = 10V - 3.7 -
Gate-Drain Charge Qgd - 2.9 -
Input Capacitance Ciss 1013 1350 1688
VDS = 15.0V, VGS = 0V,
Reverse Transfer Capacitance Crss 99 132 165 pF
f = 1.0MHz
Output Capacitance Coss 195 261 326
Turn-On Delay Time td(on) - 8.8 -
Rise Time tr VGS = 10V, VDS = 15.0V, - 12.2 -
ns
Turn-Off Delay Time td(off) ID = 20A , RG = 3.0Ω - 29.5 -
Fall Time tf - 8.6 -
Gate Resistance Rg f=1 MHz - 1.5 3.0 Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 20A, VGS = 0V - 0.8 1.1 V
Body Diode Reverse Recovery Time trr - 22.4 33.6 ns
IF = 20A, dl/dt = 100A/µs
Body Diode Reverse Recovery Charge Qrr - 14.0 21.0 nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)

2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 24.0A, VDD = 27V, VGS = 10V.
3. T < 10sec.

June. 2011. Version 1.2 2 MagnaChip Semiconductor Ltd.

 MDIS1501 – Single N-Channel Trench MOSFET 30V
40 16
VGS = 10V
4.0V 3.5V

Drain-Source On-Resistance [mΩ]

4.5V
30 12
ID, Drain Current [A]

5.0V

VGS = 4.5V
20 8

3.0V VGS = 10V

10 4

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 5 10 15 20 25 30 35 40 45 50

VDS, Drain-Source Voltage [V] ID, Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.8 100

※ Notes : ※ Notes :
1. VGS = 10 V ID = 20.0A
1.6 2. ID = 20.0 A
Drain-Source On-Resistance

Drain-Source On-Resistance

80
RDS(ON), (Normalized)

1.4
RDS(ON) [mΩ ],

60

1.2

40
1.0

20
0.8
TA = 25℃

0.6 0
-50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10

TJ, Junction Temperature [ C]

o VGS, Gate to Source Volatge [V]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

16
※ Notes :
※ Notes :
VGS = 0V
VDS = 5V
1
10
IDR, Reverse Drain Current [A]

12
ID, Drain Current [A]

TA=25℃
0
8 10

TA=25℃

4
-1
10

0
0 1 2 3 4 5 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

VGS, Gate-Source Voltage [V] VSD, Source-Drain voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

June. 2011. Version 1.2 3 MagnaChip Semiconductor Ltd.

 MDIS1501 – Single N-Channel Trench MOSFET 30V
10 1800
※ Note : ID = 20A Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
VDS = 15V
1500 Ciss Crss = Cgd
8
VGS, Gate-Source Voltage [V]

1200

Capacitance [pF]
6

900

4
600 ※ Notes ;
Coss 1. VGS = 0 V
2. f = 1 MHz
2
300 Crss

0 0
0 4 8 12 16 20 24 0 5 10 15 20 25 30

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

3
10 80
Operation in This Area
is Limited by R DS(on)
70
2
10
10 ms 60
ID, Drain Current [A]

ID, Drain Current [A]

100 ms
1s 50
1 10s
10
DC 40

30
0
10
20

Single Pulse
10
-1 TJ=Max rated
10
TC=25℃
0
10
-1
10
0
10
1
10
2 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TA, Case Temperature [℃]

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.
Case Temperature

1
10

D=0.5
Zθ JA(t), Thermal Response

0
10 0.2

0.1
0.05
-1
10 0.02

0.01
-2
10 single pulse ※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC

-3
10
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response

Curve

June. 2011. Version 1.2 4 MagnaChip Semiconductor Ltd.

 MDIS1501 – Single N-Channel Trench MOSFET 30V
Package Dimension

TO-251-VS (IPAK)

Dimensions are in millimeters, unless otherwise specified

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

June. 2011. Version 1.2 5 MagnaChip Semiconductor Ltd.