EM6K1

Transistor

Small switching (30V, 0.1A)

EM6K1

!Features !External dimensions (Units : mm)

1) Two 2SK3019 transistors in a single EMT package.
EMT6
2) The MOSFET elements are independent, eliminating

0.5 0.5
(4) (3)
interference.

0.22

1.0
1.6
(5) (2)
3) Mounting cost and area can be cut in half. (6) (1)
1.2
4) Low on-resistance. 1.6

0.13
5) Low voltage drive (2.5V) makes this device ideal for

0.5
portable equipment. Each lead has same dimensions

Abbreviated symbol : K1

!Applications
Interfacing, switching (30V, 100mA)

!Equivalent circuit
!Structure (6) (5)
Gate
(4)
Protection
Silicon N-channel Diode
∗
MOSFET
Tr1

!Packaging specifications
Package Taping
Tr2
Code T2R (1)Tr1 Source
(2)Tr1 Gate
Type Basic ordering unit 8000
(pieces) ∗ (3)Tr2 Drain
Gate (4)Tr2 Source
EM6K1 (1) Protection (2) (3) (5)Tr2 Gate
Diode
(6)Tr1 Drain
∗ A protection diode has been built in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.

!Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Drain−source voltage VDSS 30 V
Gate−source voltage VGSS ±20 V
Continuous ID 100 mA
Drain current
Pulsed IDP ∗1 400 mA
Continuous IDR 100 mA
Reverse drain current ∗1
Pulsed IDRP 400 mA
∗2 mW/TOTAL
Total power dissipation (Tc=25°C) PD 150
120mW/1ELEMENT
Channel temperature Tch 150 °C
Storage temperature Tstg −55~+150 °C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
 EM6K1
Transistor

!Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Gate−source leakage IGSS − − ±1 µA VGS=±20V, VDS=0V
Drain−source breakdown voltage V(BR)DSS 30 − − V ID=10µA, VGS=0V
Zero gate voltage drain current IDSS − − 1.0 µA VDS=30V, VGS=0V
Gate threshold voltage VGS(th) 0.8 − 1.5 V VDS=3V, ID=100µA

Static drain−source on−starte RDS(on) − 5 8 Ω ID=10mA, VGS=4V

resistance RDS(on) − 7 13 Ω ID=1mA, VGS=2.5V
Forward transfer admittance Yfs 20 − − mS VDS=3V, ID=10mA
Input capacitance Ciss − 13 − pF VDS=5V
Output capacitance Coss − 9 − pF VGS=0V
Reverse transfer capacitance Crss − 4 − pF f=1MHz

Turn−on delay time td(on) − 15 − ns ID=10mA, VDD 5V

Rise time tr − 35 − ns VGS=5V
Turn−off delay time td(off) − 80 − ns RL=500Ω
Fall time tr − 80 − ns RGS=10Ω

!Electrical characteristic curves

0.15 200m 2
4V VDS=3V GATE THRESHOLD VOLTAGE : VGS(th) (V) VDS=3V
3V 100m Pulsed ID=0.1mA

3.5V 50m
DRAIN CURRENT : ID (A)

DRAIN CURRENT : ID (A)

1.5
0.1 20m
10m
5m 1
2.5V
2m
0.05 Ta=125°C
1m 75°C
25°C 0.5
2V 0.5m −25°C
0.2m
VGS=1.5V
0 0.1m 0
0 1 2 3 4 5 0 1 2 3 4 −50 −25 0 25 50 75 100 125 150
DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (°C)

Fig.1 Typical Output Characteristics Fig.2 Typical Transfer Characteristics Fig.3 Gate Threshold Voltage vs.
Channel Temperature

50 50 15
VGS=4V VGS=2.5V Ta=25°C
Pulsed Pulsed
ON-STATE RESISTANCE : RDS(on) (Ω)

Ta=125°C Pulsed
ON-STATE RESISTANCE : RDS(on) (Ω)
ON-STATE RESISTANCE : RDS(on) (Ω)

75°C
20 Ta=125°C 20 25°C
75°C −25°C
25°C
10 −25°C 10 10
STATIC DRAIN-SOURCE
STATIC DRAIN-SOURCE

STATIC DRAIN-SOURCE

5 5

2 2 5
ID=0.1A

1 1 ID=0.05A

0.5 0.5 0
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 5 10 15 20
DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V)

Fig.4 Static Drain-Source On-State Fig.5 Static Drain-Source On-State Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current (Ι) Resistance vs. Drain Current (ΙΙ) Resistance vs. Gate-Source
Voltage
 EM6K1
Transistor
9 0.5 200m
VGS=4V VDS=3V VGS=0V

REVERCE DRAIN CURRENT : IDR (A)

Pulsed
ON-STATE RESISTANCE : RDS(on) (Ω)

8 Pulsed 100m Pulsed

0.2

ADMITTANCE :  Yfs (S)

7 Ta=−25°C 50m

FORWARD TRANSFER
ID=100mA 0.1 25°C
75°C 20m
6
0.05 125°C Ta=125°C
10m
STATIC DRAIN-SOURCE

ID=50mA 75°C
5
5m 25°C
0.02 −25°C
4
0.01 2m
3
1m
0.005
2 0.5m
1 0.002 0.2m

0 0.001 0.1m
−50 −25 0 25 50 75 100 125 150 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0.5 1 1.5
CHANNEL TEMPERATURE : Tch (°C) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.7 Static Drain-Source On-State Fig.8 Forward Transfer Admittance Fig.9 Reverse Drain Current vs.
Resistance vs. vs. Drain Current Source-Drain Voltage (Ι)
Channel Temperature

200m 50 1000
Ta=25°C Ta=25°C Ta=25°C
REVERCE DRAIN CURRENT : IDR (A)

tf
f=1MHZ VDD=5V
100m Pulsed VGS=0V 500 VGS=5V
Pulsed td(off) RG=10Ω
50m 20
200

SWITHING TIME : t (ns)

CAPACITANCE : C (pF)

20m Ciss
10 100
VGS=4V 0V
10m
5m 5 50
Coss
tr
2m 20
Crss td(on)
1m 2
10
0.5m
1 5
0.2m
0.1m 0.5 2
0 0.5 1 1.5 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 100
SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA)

Fig.10 Reverse Drain Current vs. Fig.11 Typical Capacitance vs. Fig.12 Switching Characteristics
Source-Drain Voltage (ΙΙ) Drain-Source Voltage

!Switching characteristics measurement circuits

Pulse Width

90%
50% 50%
VGS
10%
VGS
ID VDS
VDS 10%
10%
D.U.T. RL
RG
90%
90%
VDD
td(on) tr td(off) tf
ton toff

Fig.13 Switching Time Test Circuit Fig.14 Switching Time Waveforms

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0