JORDAN UNIVERSITY OF SCIENCE AND TECHNOLOGY

Faculty of engineering
Electrical Engineering Department

EE 306 – Electrical Engineering Laboratory

Experiment Of: Transistors; Common Emitter Amplifier

Experiment Number: 3
Experiment Date: 3/3/2015

Pre-lab.

‫محمد أنس عبد الحميد حجازي‬ :‫اسم الطالب‬

20132025018 :‫الرقم الجامعي‬

1 :‫رقم الشعبة‬
‫أنس الكايد – خالد حنتش – جميل أبو الهيجا‬ :‫الزمـــالء‬

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Objectives:
 To explore the basic applications of the bipolar junction transistor (BJT).
 To measure DC and AC voltages in common-emitter amplifier.
 To analyze the amplifier circuit to determine input resistance output
resistance, voltage gain, current gain and power gain.
 To design a CE amplifier Circuit for the given specifications.
 To observe with an oscilloscope, the transient signal voltages of the input and
output of the amplifier.

Components:
 Resistors: 1k, 470k, 100k, 1MΩ.
 Capacitor: 10µF.
 Semiconductors: Transistor BC 172 B.
Equipment:
 CRO-Cathode Ray Oscilloscope
 DMM-Digital Multi Meter
 Transformer
 DC source 12V ( or equivalent battery )
 Connecting wires
Background Theory & Mathematical Expressions:
The Bipolar Junction Transistor
A junction transistor is made when two p-n junctions are formed on the same
substrate crystal. This device is frequently called a bipolar junction transistor.
There are two types: pnp and npn.

The usual circuit connections and terminal designations are shown in Figures below

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Regardless of the transistor type, the emitter-base junction is normally forward
biased and the collector-base junction is normally reverse biased as shown.
The majority carriers in the pnp device are holes, while electrons are the majority
carriers in the npn transistor. In the typical manufacturing process, the base region
is kept physically quite thin. Moreover, the base region is lightly doped. The emitter
region is richly doped to reduce its resistance. The collector region is lightly doped
to reduce the junction capacitance of the collector-base junction.
Transistor operation
The mode of operation of the npn transistor shown in above can be understood by
considering that electrons (IE) from VEE are injected into the emitter region (n
material). The forward biased base-emitter junction, acting like a diode, does not
interfere with the drift of the electrons into the base region (p material). A small
amount of electron-hole recombination occurs in the base region. And appears in
the external circuit as the base current IB. Since the base region is quite thin.
However, the vast majority of the electrons reaches the collector-base junction and
cross it under the influence of the positive polarity of the collector the collector is
held positive, relative to the base and the emitter, by Vcc.

For the effective operation of a transistor more than 95% of the majority carries
must pass through the base region from the emitter to the collector recombination.
This suggests that the collector current, IC , is only without slightly less than the
emitter current.

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External Circuit Configurations
The junction transistor can be used as a circuit device in three distinct
configurations. The descriptions of these configurations refer to the lead common
to both the input and output.
The three configurations is
Common emitter (CE)--common collector (CC)--common base (CB)
are given in Figures right below

The important circuit properties of each

configuration, such as the input and output
resistances and the voltage and current gains are
given in Table at the bottom of the page. Each of the
configurations possesses certain desirable circuit
characteristics. The choice of the configuration to
be used for a given application is based upon the
most important particular characteristics.

Amplification
Amplification is the process by which the magnitude
of a signal is increase, whether it be voltage,
current, or power. This accomplished by using the
input signal to control the amount of power being
supplied to the output from an independent
reserve. This reserve, as well as the input signal is
essential to the process. The control device is, of
course, the transistor. For most situations, an
additional quality is sought: the character of the
input signal should be faithfully reproduced in the
output signal. In other words, the information
content of the input should not be degraded by the
amplifier.

The Common Emitter Amplifier

Consider the common-emitter circuit shown in Figure right

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Notice that the batteries shown in previous
illustrations have been replaced by a single DC
power source, but the collector voltage remains
greater than the base voltage, which is positive,
and both are greater than the voltage at the
emitter. If we capacitively couple an incoming AC
signal. ∆ v B, and measure the output AC signal
∆ v C through a capacitor (to block the DC signal)
as shown in Figure below

We find that the circuit is a common-emitter

amplifier.

First, we must realize that the base-emitter junction acts as a forward- biased diode
and thus has an associated voltage
drop of about 0.6 V. In other words
V E=V B−0.6 v
A varying signal at the base will thus
cause the identical signal to appear at
the emitter (a time derivative of
Equation above will make this fact
readily apparent), or
∆ V E=∆ V B
Dividing both sides of the equation by
RE results in
∆ V E / R E=∆ V B / R E
Or
∆ I E =∆V B / R E
But
I C =βI B
And
I E =I C + I B
So for large values of β
∆ IE ≈ ∆ IC
Substituting for and realizing that the voltage drop ∆ V C =−∆ I C RC we find
∆ V B / R E=−∆ V C /R C
Or
voltage gain=∆ V C /∆ V B =−RC / R E

For values of RC> RE, the common-emitter circuit is a voltage amplifier. The negative
sign indicates a phase shift of 180o.

Procedure:

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  Build the given circuit
 Inject current base IB to get voltage drop VCE of 6v
 Record that IB and then calculate the collector current IC
 Apply input voltage at VBE of 5 mV peak measured by the scope
and record the output VCE
 Calculate the voltage gain and the current gain
 Copy the waveform of the signals ( in & out ) using time base of
2ms/DIV and sketch it on a graph paper
 Repeat with VCE adjusted to 8v, 4v.

Expectation:
 I want to learn how to deal with the transistor, this is my first time to handle an
element that I can make some control with it. (all previous electrical component
ware uncontrolled (resistors, capacitors, and diodes)
 Especially when I talk about the common-emitter amplifier, There is a lot of
applications I’ve read about them that use this configuration like microphone –
speaker below

Or this combination below that gives me a light as a result of sound effect.

So I wish to understand how these devices work, and how I can control the
amplification
 Finally I read in the textbook that when we use an AC source as an input
source, we have to put a capacitor to block the DC signal. Actually I don’t
understand what is that means .
References:
From the university library
 Principles of electronics instrumentation : Diefenderfer, Holton
Our lab. Manual

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