13007

NPN Silicon Transistor

for high voltage, high-speed power switching application

TO-220 Plastic Package

Absolute Maximum Ratings (Ta = 25 OC)

Parameter Symbol Value Unit

Collector Base Voltage VCBO 700 V

Collector Emitter Voltage VCEO 400 V
Emitter Base Voltage VEBO 9 V
Collector Current IC 8 A
Total Power Dissipation (Ta = 25 OC) Ptot 2 W
Total Power Dissipation (TC = 25 C)
O
Ptot 80 W
Junction Temperature Tj 150 O
C
Storage Temperature Range Tstg - 55 to + 150 O
C

Characteristics at Ta = 25 OC
Parameter Symbol Min. Max. Unit
DC Current Gain
hFE 8 40 -
at VCE = 5 V, IC = 2 A
Collector Base Cutoff Current
ICBO - 1 mA
at VCB = 700 V
Emitter Base Cutoff Current
IEBO - 1 mA
at VEB = 9 V
Collector Base Breakdown Voltage
V(BR)CBO 700 - V
at IC = 1 mA
Collector Emitter Breakdown Voltage
V(BR)CEO 400 - V
at IC = 10 mA
Emitter Base Breakdown Voltage
V(BR)EBO 9 - V
at IE = 1 mA
Collector Emitter Saturation Voltage
VCE(sat) - 2 V
at IC = 5 A, IB = 1 A
Base Emitter Saturation Voltage
VBE(sat) - 1.6 V
at IC = 5 A, IB = 1 A
Transition Frequency
fT 4 - MHz
at VCE = 10 V, IC = 0.5 A

SEMTECH ELECTRONICS LTD.

®
Dated : 17/09/2016 Rev: 01
13007

TO-220 PACKAGE OUTLINE

SEMTECH ELECTRONICS LTD.

®
Dated : 17/09/2016 Rev: 01