AP3N1R8MT-L

Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ 100% Rg & UIS Test D BVDSS 30V

▼ Simple Drive Requirement RDS(ON) 1.89mΩ
4
▼ Ultra Low On-resistance ID 165A
G
▼ RoHS Compliant & Halogen-Free
S
D
D
Description D
D
AP3N1R8 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications. S
S
The PMPAK ® 5x6L package is special for DC-DC converters S
G ®
application and the foot print is compatible with SO-8 with backside PMPAK 5x6L
heat sink and lower profile.

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol Parameter
. Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage +20 V
4
ID@TC=25℃ Drain Current, VGS @ 10V (Silicon Limited) 165 A
3
ID@TA=25℃ Drain Current, VGS @ 10V 40.6 A
3
ID@TA=70℃ Drain Current, VGS @ 10V 32.5 A
1
IDM Pulsed Drain Current 300 A
PD@TC=25℃ Total Power Dissipation 83.3 W
PD@TA=25℃ Total Power Dissipation 5 W
5
EAS Single Pulse Avalanche Energy 28.8 mJ
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 1.5 ℃/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 25 ℃/W

Data & specifications subject to change without notice 1

201605311
AP3N1R8MT-L

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A - - 1.89 mΩ
VGS=4.5V, ID=20A - - 3.6 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=20A - 120 - S
IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
Qg Total Gate Charge ID=20A - 38 60 nC
Qgs Gate-Source Charge VDS=15V - 7 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 22 - nC
td(on) Turn-on Delay Time VDS=15V - 14 - ns
tr Rise Time ID=1A - 12 - ns
td(off) Turn-off Delay Time RG=3.3Ω - 52 - ns
tf Fall Time VGS=10V - 42 - ns
Ciss Input Capacitance VGS=0V - 3030 4850 pF
Coss Output Capacitance VDS=25V - 820 - pF
Crss Reverse Transfer Capacitance
.
f=1.0MHz - 420 - pF
Rg Gate Resistance f=1.0MHz - 1.3 2.6 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=20A, VGS=0V - - 1.2 V
trr Reverse Recovery Time IS=10A, VGS=0V, - 47 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 57 - nC

Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
2 o
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec, 60 C/W at steady state.
4.Package limitation current is 100A .
o
5.Starting Tj=25 C , VDD=30V , L=0.1mH , RG=25Ω

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

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 AP3N1R8MT-L

320 200

T C =25 C
o 10V o
T C =150 C 10V
8.0V 8.0V
7.0V 160
7.0V
6.0V 6.0V

ID , Drain Current (A)

ID , Drain Current (A)

240

5.0V 5.0V
V G = 4.0 V 120
V G =4.0V

160

80

80
40

0 0
0 0.4 0.8 1.2 1.6 2 0 0.4 0.8 1.2 1.6 2

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

2.4 2.0

I D =20A I D =20A
T C =25 o C V G =10V

2.2 1.6
Normalized RDS(ON)
RDS(ON) (mΩ)

2 1.2

.
1.8 0.8

1.6 0.4
2 4 6 8 10 -100 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
100 2.0

I D = 250uA

1.6
Normalized VGS(th)

10
IS(A)

T j =150 o C T j =25 o C
1.2

0.8

0.4

0.1 0.0
0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP3N1R8MT-L

10
f=1.0MHz
4000

I D =20A
V DS =15V
VGS , Gate to Source Voltage (V)

8
3000
C iss

C (pF)
6

2000

1000

2 C oss
C rss

0 0
0 10 20 30 40 50 60 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1000 1

Duty factor = 0.5

Normalized Thermal Response (Rthjc)

0.2
Operation in this
area limited by
RDS(ON) 0.1
100 0.1

100us 0.05
ID (A)

.
0.02

0.01

PDM
10 0.01 t
Single Pulse
1ms T

10ms Duty factor = t/T

T C =25 o C 100ms Peak Tj = PDM x R thjc + T c

Single Pulse DC
1 0.001
0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

200 200

V DS =5V

160 160
ID , Drain Current (A)
ID , Drain Current (A)

120 120
Limited by package

80 80

T j =150 o C

40 40
T j =25 o C

o
T j = -55 C
0 0
25 50 75 100 125 150 0 1 2 3 4 5 6

o
T C , Case Temperature ( C) V GS , Gate-to-Source Voltage (V)

Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics
Temperature

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 AP3N1R8MT-L

2 120

I D =1mA
100
1.6

PD, Power Dissipation(W)

Normalized BVDSS

80

1.2

60

0.8

40

0.4
20

0 0
-100 -50 0 50 100 150 0 50 100 150

T j , Junction Temperature ( o C) T C , Case Temperature( C)o

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation
Temperature
20

T j =25 o C

16
RDS(ON) (mΩ)

12

8
.

4.5V
V GS =10V
0
0 20 40 60 80 100 120

I D , Drain Current (A)

Fig 15. Typ. Drain-Source on State

Resistance

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AP3N1R8MT-L
MARKING INFORMATION

Part Number

3N1R8

YWWSSS

Date Code (YWWSSS)

Y：Last Digit Of The Year
WW：Week
SSS：Sequence

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 ADVANCED POWER ELECTRONICS CORP.

Package Outline : PMPAK 5x6L

D1
D2
H
SYMBOLS Millimeters
MIN NOM MAX
E2
A 0.90 1.10 1.30
E1 E b 0.33 0.41 0.51
C 0.15 － －
K D1 4.80 4.90 5.10
D2 － － 4.40
L 1
E 6.25 6.35 6.45
e E1 (Ref.) 5.60 5.75 5.90
b L1
E2 (Ref.) 3.30 3.55 3.80
e 1.27 BSC
BACKSIDE VIEW
H － － 0.90
α( K (Ref.) 0.70 － －
L 0.68 0.78 0.88
L1 0.25 0.30 0.40
α(Ref.) 0° － 12°
A
.
C

1.All Dimension Are In Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Draw No. M1-MT8L-4-Gv01

 PMPAK 5x6 L

LAYOUT GUIDE

5.1mm

4.35mm

1.2mm
.

0.95mm

Pin1
0.51mm
1.27mm

ADVANCED POWER ELECTRONICS CORP.

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