R

深圳市晶导电子有限公司 13007S
www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor

◆Si NPN
◆RoHS COMPLIANT

1．APPLICATION
Computer Switch Power Supply and
All kinds of power switch circuit

2．FEATURES

Features of good high temperature

High switching speed

3．PACKAGE
TO-220
4．Electrical Characteristics 1 Base(B) 2 Collector(C) 3 Emitter(E)
4.1 Absolute Maximum Ratings
Tamb= 25℃ unless specified
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 500 V
Collector-Emittor Voltage VCEO 350 V
Emittor- Base Voltage VEBO 9 V
Collector Current IC 8 A
Ta=25℃ 2
Power Dissipation Ptot W
Tc=25℃ 75
Junction Temperature Tj 150 ℃
Storage Temperature Tstg -55～150 ℃
4.2 Electrical Parameter
Tamb= 25℃ unless specified
VALUE
PARAMETER SYMBOL TEST CONDITION UNIT
MIN TYP MAX
Collector-Base Voltage BVCBO IC=1mA，IE=0 500 V
Collector-Emittor Voltage BVCEO IC=1mA，IB=0 350 V
Emittor-Base Voltage BVEBO IE=1mA，IC=0 9 V
Collector-Base Cutoff Current ICBO VCB=500V, IE=0 10 μA
Collector-Emittor Cutoff Current ICEO VCE=350V, IB=0 20 μA
Emittor-Base Cutoff Current IEBO VEB=9V, IC=0 10 μA
VCE=5V, IC=1mA 8
DC Current Gain hFE*
VCE=5V, IC=2A 20 35
Collector-Emittor Saturation Voltage VCE sat* IC=5A, IB=2.5A 0.6 V
Base-Emittor Saturation Voltage VBE sat* IC=5A, IB=2.5A 1.2 V
Rising Time tr 0.9 μs
Falling Time tf IC=500mA (UI9600) 0.20 0.5 μs
Storage Time ts 3 6 μs
VCE=10V,IC=0.5A,
Typical Frequency fT f=1MHz
4 MHz

＊: Pulse test tp≤300μs,δ≤2%

Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel：0755-29799516 Fax：0755-29799515
第1页 2013 版
 R

深圳市晶导电子有限公司 13007S
www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor

5. Characteristic Curve
Fig1 （DC）
SOA（ ） Fig2 –T
Ptot–

Ptot-Tc
Ta=25℃
60

1.0

Ptot (W)
45
C

30
0.1

15
Ptot-Ta
0.01 0
1 10 100 1000 0 50 100 150
VCE (V) Tc ( C)
Fig3 Static Characteristic Fig4 hFE-IC
10

IB =1A Ta=25℃ Ta=25℃

hFE

5 10
C

IB =200mA

IB =100mA
VCE=5V
0 1
0 5 10 3mA 0.01 0.1 1 10 30
V CE (V) C

Fig5 VCEsat-IC Fig6 VBEsat-IC

Ta=25℃ Ta=25℃
IC/IB=2 IC/IB=2
1
VBEsat (V)

1.0
CE

0.1

0.01 0.5
0.1 1 10 50 0.1 1 10 50
Ic (A) Ic (A)

Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel：0755-29799516 Fax：0755-29799515
第2页 2013 版
 R

深圳市晶导电子有限公司 13007S
www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor

6．Package Dimentions(Unit：
：mm)

TO-
TO-220

Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel：0755-29799516 Fax：0755-29799515
第3页 2013 版