P3004ND5G

N&P-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID Channel
40V 30mΩ @VGS = 10V 12A N
-40V 55mΩ @VGS = -10V -8.8A P

TO-252- 5

100% Rg tested
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS
N 40
Drain-Source Voltage VDS
P -40
V
N ±20
Gate-Source Voltage VGS
P ±20
N 12
TC = 25 °C
P -8.8
Continuous Drain Current ID
N 8
TC = 70 °C
P -5.8
A
1
N 50
Pulsed Drain Current IDM
P -50
N 19
Avalanche Current IAS
P -18
N 20
Avalanche Energy L = 0.1mH EAS mJ
P 19
N 3
TC = 25 °C
P 3
Power Dissipation PD W
N 2.1
TC = 70 °C
P 2.1
Junction & Storage Temperature Range TJ, TSTG -55 to 150
°C
Lead Temperature (1/16" from case for 10 sec.) TL 275

Ver 1.0 1 2012/4/12

P3004ND5G
N&P-Channel Enhancement Mode MOSFET

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL CHANNEL TYPICAL MAXIMUM UNITS

Junction-to-Case RqJC N&P 6

°C / W
Junction-to-Ambient RqJA N&P 42
1
Pulse width limited by maximum junction temperature.
2
Duty cycle ≦ 1%

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
VGS = 0V, ID = 250mA N 40
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = -250mA P -40
V
VDS = VGS, ID = 250mA N 1.7 2.0 3.0
Gate Threshold Voltage VGS(th)
VDS = VGS, ID = -250mA P -1.7 -2.0 -3.0
VDS = 0V, VGS = ±20V N ±100
Gate-Body Leakage IGSS nA
VDS = 0V, VGS = ±20V P ±100
VDS = 32V, VGS = 0V N 1
VDS = -32V, VGS = 0V P -1
Zero Gate Voltage Drain Current IDSS mA
VDS = 30V, VGS = 0V, TJ = 55 °C N 10
VDS = -30V, VGS = 0V, TJ = 55 °C P -10
VDS = 5V, VGS = 10V N 50
On-State Drain Current1 ID(ON) A
VDS = -5V, VGS = -10V P -50
VGS = 5V, ID = 6A N 39 50
Drain-Source On-State VGS = -5V, ID = -4.5A P 76 99
RDS(ON) mΩ
Resistance1 VGS = 10V, ID = 7A N 26 30
VGS = -10V, ID = -5.5A P 47 55
VDS = 10V, ID = 7A N 18
Forward Transconductance1 gfs S
VDS = -10V, ID = -5.5A P 10
DYNAMIC
N 495 643
Input Capacitance Ciss
N-Channel P 558 725
VGS = 0V, VDS = 10V, f = 1MHz
N 110 143
Output Capacitance Coss pF
P-Channel P 250 325
VGS = 0V, VDS = -10V, f = 1MHz N 41 53
Reverse Transfer Capacitance Crss
P 60 78

Ver 1.0 2 2012/4/12

P3004ND5G
N&P-Channel Enhancement Mode MOSFET

DYNAMIC
N 1.8
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Ω
P 7

N-Channel N 12
Total Gate Charge2 Qg
VDS = 0.5V(BR)DSS, VGS = 10V, P 11
ID = 7A N 1.8
Gate-Source Charge2 Qgs nC
P-Channel P 1.7
VDS = 0.5V(BR)DSS, VGS = -10V, N 1.6
Gate-Drain Charge2 Qgd ID = -5.5A
P 1.5
N 1.7 3.2
Turn-On Delay Time2 td(on)
N-Channel P 5.4 12
VDS = 20V
N 5.6 10
Rise Time2 tr ID @ 1A, VGS = 10V, RGEN = 6Ω
P 7.8 16.5
nS
2 P-Channel N 7.6 14
Turn-Off Delay Time td(off)
VDS = -20V P 16 30
ID @ -1A, VGS = -10V, RGEN = 6Ω N 2.8 5.5
Fall Time2 tf
P 10 18
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
IF = 7A, VGS = 0V N 1.2
Forward Voltage1 VSD V
IF = -5.5A, VGS = 0V P -1.2
IF = 7A, dlF/dt = 100A / mS N 40
Reverse Recovery Time trr nS
IF = -5.5A, dlF/dt = 100A / mS P 50
N 28
Reverse Recovery Charge Qrr nC
P 50
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

Ver 1.0 3 2012/4/12

P3004ND5G
N&P-Channel Enhancement Mode MOSFET

Ver 1.0 4 2012/4/12

P3004ND5G
N&P-Channel Enhancement Mode MOSFET

Ver 1.0 5 2012/4/12

P3004ND5G
N&P-Channel Enhancement Mode MOSFET

Ver 1.0 6 2012/4/12

P3004ND5G
N&P-Channel Enhancement Mode MOSFET

Ver 1.0 7 2012/4/12

P3004ND5G
N&P-Channel Enhancement Mode MOSFET

Ver 1.0 8 2012/4/12