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ECE606: Solid State Devices
ECE606: Solid State Devices
Lecture 37: Nonideal Effects in MOSFET
Muhammad Ashraful Alam
alam@purdue.edu

Alam  ECE‐606 S09 1
Topic Map

Equilibrium DC Small 
Small Large 
Large Circuits
signal Signal
Diode

Schottky

BJT/HBT

MOS

Alam  ECE‐606 S09 2
Outline

1. Flat band voltage

2. Threshold voltage shift due to trapped charges

3. Physics of interface traps μ0 Cox
ID = (VG − Vth ) 2
Lch
4 Conclusion
4.

γ M QM QF QIT (φs )
Vth = Vth ,ideal + φMMSS − − −
Cox Cox Cox

REF Ch
REF. Chapter 18, SDF
18 SDF

Alam  ECE‐606 S09 3
 (1) Idealized MOS Capacitor

Vacuum level
χi
y Substrate (p)
χs
Φm
EC
Recall that
Recall that EF
EV
Qi = Cox (VG − Vth ,ideal )

QB
Vth , ideal =ψ s −
Cox metal insulator p semiconductor
p
ψ s = 2φF

Alam  ECE‐606 S09 4
Potential, Field, Charges

V
χi

χs
x
Φm

E
x

Vbi=0 ρ
x

Alam  ECE‐606 S09 5
 Real MOS Capacitor with ΦM < ΦS
Note the difference
EVAC

Φ M = qφ m χS
qψ S > 0 EC
ΦS
EC
EF
EF
EV
EV

Do we need to apply less or more VG to invert the channel ?

6
 Physical Interpretation of Flatband Voltage

VG = 0 VFB = φms = −Vbi < 0

EC

EF VG = VFB < 0 EC

EV EF

EV

Vbi = −φ ms > 0 ψ S = 0 flat band

+ −
Alam  ECE‐606 S09 7
How to Calculate Built‐in or Flat‐band Voltage

qVbi = ( χ s + Eg − Δ p ) − Φ M
Vacuum level
qVbi
= qVFB ≡ φMS
χs

Φm EC
Th f
Therefore, EF
EV
Qi = Cox (VG − Vth )

⎛ QB ⎞
Vth = ⎜ 2φF − ⎟ − VFB
⎝ Cox ⎠

Alam  ECE‐606 S09 8
Measure of Flat‐band shift from C‐V Characteristics

C/Cox

Id l Vth
Ideal V
VG
Actual Vth

Alam  ECE‐606 S09 9
Outline

1 Flat band voltage 
1. Flat band voltage

2. VT‐shift due to trapped charges

3. Physics of interface traps

4. Conclusion

γ M QM QF QIT (φs )
Vth = Vth ,ideal + φMS − − −
Cox Cox Cox

Alam  ECE‐606 S09 10
 (2) Idealized MOS Capacitor

Vacuum level
χi
y Substrate (p)
χs
Φm
EC

Qox=0
EF
Recall that
EV
Qi = Cox (VG − Vth ,ideal )

QB
Vth , ideal = ψ s −
Cox ψ s = 2φF metal insulator p semiconductor

Alam  ECE‐606 S09 11
Distributed Trapped charge in the Oxide

xO

XO

EC QM = ∫ρ
0
ox ( x)dx

EF x0

EV xM ∫ xρ ox ( x)dx
γM ≡ = 0
x0
x x0
0 x0 ∫ ρ ox ( x)dx
0

QF QM
Vthh = ψ S − −γM
Cox Cox
Alam  ECE‐606 S09 12
 An Intuitive View  Reduced gate charge 

Bulk charge
Ideal charge free oxide
Ideal charge‐free oxide
‐E

0
‐E
Interface charge
0
E
‐E

Alam  ECE‐606 S09 13
 Gate Voltage and Oxide Charge

VG = ΔVox + ψ s

E ( x0 )
ρox ( x ')dx '
x0
d Vox dE ox ρ ox ( x)
2
− = =
κ ox
∫ dE ox = ∫x κ oxε 0
ox ε 0
2
dx dx E ( x)

ρox ( x ')dx '

x0
dVox
− = E ox ( x) = E ox ( x0 ) − ∫
d
dx x κ oxε 0

κ ρ ( x ')dx '
x0 x0

ΔVox = S x0E S ( x0 ) − ∫ dx ∫ ox ‐E
κ ox 0 x κ oxε 0
κ
x0
x ρ ( x)dx 0
= S x0E S ( x0 ) − ∫ ox
κ ox 0 κ oxε 0

Alam  ECE‐606 S09 14
 Gate Voltage and Oxide Charge
κS x ρ ox ( x)dx
x0

ΔVox = x0E S ( x0 ) − ∫
κo 0 ⎛ κ oxε 0 ⎞
⎜ ⎟ x0
⎝ x0 ⎠
κS
x0
1
=
κ ox
x0E S ( x0 ) − ∫
Cox x0 0
x ρ ox ( x)dx

Vth = ψ s (= 2φF ) + ΔVox

κS
x0
1
= ψ s (= 2φF ) +
κ ox
x0E S ( x0 ) − ∫
Co x0 0
x ρox ( x)dx

x0
1
= Vth , ideal −
Cox x0 ∫ xρ
0
ox ( x)dx

QM
= Vth , ideal − γM
Cox
Alam  ECE‐606 S09 15
 Interpretation for Bulk Charge 

C/Cox

x0
1
Vth = Vth ,ideal −
Co x0 ∫ xρ
0
ox ( x)δ ( x − x1 )dx

= Vth , ideal −
x1 QM ( x1 ) Ideal VT
x0 Co VG
New VT

Alam  ECE‐606 S09 16
 Interpretation for Interface Charge

C/Cox

x0
1
Vth = Vth* −
Co x0 ∫ xρ
0
ox ( x)δ ( x − xo )dx

Q
Ideal VT
= Vth* − F VG
Co New VT

Alam  ECE‐606 S09 17
 Time‐dependent shift of Trapped Charge

C/Cox

x0
1
Vth = Vth , ideal −
Cox x0 ∫ xQ
0
ox ( x) × δ ( x − x1 (t ))dx

x1 (t ) Qox ( x) Ideal VT
= Vth , ideal − ×
x0 Cox VG

Sodium related bias temperature instability (BTI) issue

18
Bias Temperature Instability (Experiment)
M O S M O S
‐ ‐
‐ ‐
‐ + + ‐
‐ + + ‐
‐ ++ + + +
++ ‐‐
‐ ++ + +
‐ + + ++ ‐
‐ + ‐
‐ ‐
‐ ‐
(‐) biases (+) biases
ρion

ρion

x x
0.1xo 0.9xo
0 xo 0 xo

Alam  ECE‐606 S09 19