CHENMKO ENTERPRISE CO.

,LTD
SMALL FLAT CH882GP
NPN Epitaxial Transistor
VOLTAGE 30 Volts CURRENT 3 Ampere

APPLICATION
* Power driver and Dc to DC convertor .

FEATURE
* Small flat package. (DPAK) DPAK/TO-252
* Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A)
* High speed switching time: tstg= 1.0uSec (typ.)

.050 (1.27)
.030 (0.77)
* PC= 1.5 W (mounted on ceramic substrate). .094 (2.38)
* High saturation current capability. .086 (2.19)
.022 (0.55)
.018 (0.45)
CONSTRUCTION

.217 (5.40)
.228(5..80)

.394 (10.00)
* NPN Switching Transistor

.354 (9.00)
(1) (3) (2)
MARKING
* hFE Classification Q: Q82

.050 (1.27)
.020 (0.51)
.087 (2.20)
.110 (2.80)

.028 (0.70)

.020 (0.51)
P: 882 .019 (0.50)
E: E82 .035 (0.90)
.181 (4.60) .024 (0.60)
.268 (6.80)
.252 (6.40) .023 (0.58)
.018 (0.46)
C (3)
CIRCUIT 1 Base
(1) B 2 Emitter
3 Collector ( Heat Sink )

E (2)
Dimensions in inches and (millimeters) DPAK

MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )

RATINGS CONDITION SYMBOL MIN. MAX. UNITS

Collector - Base Voltage Open Emitter VCBO - 40 Volts

Collector - Emitter Voltage Open Base VCEO - 30 Volts

Emitter - Base Voltage Open Collector VEBO - 5 Volts

Collector Current DC IC - 3 Amps

Peak Collector Current ICM - 3 Amps

Peak Base Current IBM - 0.5 Amps

Total Power Dissipation TA ≤ 25OC; Note 1 PTOT - 2000 mW

o
Storage Temperature TSTG -55 +150 C
o
Junction Temperature TJ - +150 C
o
Operating Ambient Temperature TAMB -55 +150 C

Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2004-8
 RATING CHARACTERISTIC CURVES ( CH882GP )

CHARACTERISTICS ( At TA = 25oC unless otherwise noted )

PARAMETERS CONDITION SYMBOL MIN. TYPE MAX. UNITS

Collector Cut-off Current IE=0; VCB=30V ICBO - - 1.0 uA

Emitter Cut-off Current IC=0; VEB=3V IEBO - - 1.0 uA

VCE=2V; Note 1
DC Current Gain IC=0.02A hFE 30 - -
IC=1.0A; Note 2 100 160 500

Collector-Emitter Saturation Voltage IC=2A; IB=0.2A VCEsat - 0.3 0.5 Volts

Base-Emitter Saturatio Voltage IC=2A; IB=-0.2A VBEsat - 1.0 2.0 Volts

IE=ie=0; VCB=10V;
Collector Capacitance CC - 55 - pF
f=1MHz

IC=0.02A; VCE=20V;
Transition Frequency fT - 100 - MHz
f=100MHz

SWITCHING TIMES ( Between 10% and 90% levels )

PARAMETERS CONDITION SYMBOL MIN. TYPE MAX. UNITS
OUTPUT
Turn-on Time ton - 0.1 - uSec
IB2
INPUT
30 ohmS

IB2
IB1
Storage Time ts - 1.0 - uSec
20uSec IB1
IB1=-IB2=0.05A
Fall Time Duty cycle<1% 30V tf - 0.1 - uSec

Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE(2) Classification Q: 100 to 200, P: 160 to 320, E: 250 to 500.
 RATING CHARACTERISTIC CURVES ( CH882GP )

Typical Electrical Characteristics

Figure 1. CC - Reverse VCB Figure 2. Cutoff Frequency - IC

3000 3000

V CE =5V
COLLECTOR CAPACITANCE CC (pF)

1000 1000

CUTOFF FREQUENCY (MHz)

100 100

10 10

1 1
0.1 0.3 1.0 3.0 10 30 100 1 10 100 1000

COLLECTOR-BASE REVERSE BIAS VOLTAGE V CB (V) COLLECTOR CURRENT I C (mA)

Figure 3. hFE - IC Figure 4. PC - TA

1000 1.5
COLLECTOR POWER DISSIPATION PC (W)

COMMON EMITTER 1.4 (1) Mounted on ceramic substrate

(1)
V CE =2V ( 250mm 2x0.8t )
500 (2) No heat sink
1.2
DC CURRENT GAIN hFE

300
1.0

0.8
100

0.6 (2)
50
0.4
30
0.2

10 0
10 30 100 300 1000 3000 0 20 40 60 80 100 120 140 160

COLLECTOR CURRENT I C (mA) AMBIENT TEMPERATURE T A ( OC)

Figure 5. VCE(sat) - IC Figure 6. VBE(sat) - IC

1 10
COLLECTOR-EMITTER SATURATION VOLTAGE

COMMON EMITTER COMMON EMITTER

BASE-EMITTER SATURATION VOLTAGE

0.5 5
I C /I B =10 I C /I B =10
0.3 3
VCE(sat) (V)

VBE(sat) (V)

0.1 1

0.05 0.5

0.03 0.3

0.01 0.1
10 30 100 300 1000 3000 10 30 100 300 1000 3000

COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)

 RATING CHARACTERISTIC CURVES ( CH882GP )

Typical Electrical Characteristics

Figure 9. Safe Operation Area

30000

10000 1 mS
COLLECTOR CURRENT IC (mA)

5000
3000

1000 100 mS
500
300 1S

100 Single nonrepetitive pulse

TA=25OC
50 Curve must be derated linearly
30 with increase in temperature
Tested without a substrate
10
0.1 0.3 1.0 3.0 10 30 100

COLLECTOR-EMITTER VOLTAGE V CE (V)